Type BSC014N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1) • Qualified according to JEDEC for target applications VDS 60 V RDS(on),max 1.45 mW ID 100 A QOSS 100 nC 89 nC QG(0V..10V) • Pb-free lead plating; RoHS compliant PG-TDSON-8 FL • Halogen-free according to IEC61249-2-21 enlarged source interconnection • Higher solder joint reliability due to enlarged source interconnection Type Package Marking BSC014N06NS PG-TDSON-8 FL 014N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 100 V GS=10 V, T C=25 °C, R thJA =50 K/W 2) Unit A 30 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 580 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev.2.1 page 1 2013-01-29 BSC014N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 156 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - - 0.8 top - - 20 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=120 µA 2.1 2.8 3.3 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.5 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 1.2 1.45 mW V GS=6 V, I D=12.5 A - 1.6 2.2 - 2 3 W 75 150 - S Gate resistance RG Transconductance g fs Rev.2.1 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2013-01-29 BSC014N06NS Parameter Values Symbol Conditions Unit min. typ. max. - 6500 8125 - 1500 1875 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 59 118 Turn-on delay time t d(on) - 23 - Rise time tr - 10 - Turn-off delay time t d(off) - 43 - Fall time tf - 11 - Gate to source charge Q gs - 28 - Gate charge at threshold Q g(th) - 18 - Gate to drain charge Q gd - 16 21 Switching charge Q sw - 26 - Gate charge total Qg - 89 104 Gate plateau voltage V plateau - 4.3 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 78 - nC Output charge Q oss V DD=30 V, V GS=0 V - 100 - - - 100 - - 400 - 0.8 1.2 V - 52 83 ns - 139 - nC V DD=30 V, V GS=10 V, I D=30 A, R G,ext,ext=2 W ns Gate Charge Characteristics5) V DD=30 V, I D=50 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) A T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=30 V, I F=50 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev.2.1 page 3 2013-01-29 BSC014N06NS 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 180 120 160 100 140 80 100 ID [A] Ptot [W] 120 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 0 25 50 TC [°C] 75 100 125 175 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T limited by on-state resistance 103 150 100 0.5 1 µs 10 µs 102 0.2 100 µs 10-1 0.1 ZthJC [K/W] ID [A] 1 ms 10 ms 101 DC 0.05 0.02 0.01 10-2 single pulse 100 10-1 10-3 10-1 100 101 102 VDS [V] Rev.2.1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-01-29 BSC014N06NS 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 4 10 V 7V 5V 360 5.5 V 6V 5.5 V 320 3 RDS(on) [mW] 280 ID [A] 240 200 5V 160 2 6V 7V 10 V 120 1 80 40 0 0 0.0 0.5 1.0 1.5 2.0 0 50 100 150 VDS [V] 200 250 300 350 400 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 250 360 320 200 280 150 gfs [S] ID [A] 240 200 160 100 120 80 50 150 °C 40 25 °C 0 0 0 2 4 6 20 40 60 80 100 ID [A] VGS [V] Rev.2.1 0 page 5 2013-01-29 BSC014N06NS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 3 5 2.5 4 3 VGS(th) [V] RDS(on) [mW] 2 max 1.5 typ 1200 mA 120 µA 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 10000 Ciss Coss 1000 102 IF [A] C [pF] 103 25 °C 102 150 °C 101 100 Crss 101 100 10 0 20 40 60 VDS [V] Rev.2.1 0 0.5 1 1.5 VSD [V] page 6 2013-01-29 BSC014N06NS 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD 100 12 30 V 10 25 °C 12 V 48 V 100 °C 8 VGS [V] IAV [A] 125 °C 10 6 4 2 1 1 10 100 0 1000 0 20 tAV [µs] 40 60 80 100 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg VBR(DSS) [V] 66 62 V gs(th) 58 54 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev.2.1 page 7 2013-01-29 BSC014N06NS Package Outline PG-TDSON-8 FL PG-TDSON-8 FL: Outline Rev.2.1 page 8 2013-01-29 BSC014N06NS Package Outline PG-TDSON-8: Tape Rev.2.1 page 9 2013-01-29 BSC014N06NS Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.1 page 10 2013-01-29