IPP040N06N Data Sheet (496 KB, EN)

Type
IPP040N06N
OptiMOSTM Power-Transistor
Features
Product Summary
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
1)
• Qualified according to JEDEC for target applications
VDS
60
V
RDS(on),max
4.0
mW
ID
80
A
QOSS
44
nC
QG(0V..10V)
38
nC
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TO220-3
Type
Package
Marking
IPP040N06N
PG-TO220-3
040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
80
V GS=10 V, T C=100 °C
80
V GS=10 V, T C=25 °C,
R thJA =50K/W
20
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse3)
E AS
I D=80 A, R GS=25 W
70
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
IPP040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
Value
T C=25 °C
107
T A=25 °C,
R thJA=50 K/W
3.0
T j, T stg
W
-55 ... 175
IEC climatic category; DIN IEC 68-1
Parameter
Unit
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.4
minimal footprint
-
-
62
6 cm² cooling area4)
-
-
40
Thermal characteristics
Thermal resistance, junction - case
R thJC
Device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=50 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=80 A
-
3.6
4.0
mW
V GS=6 V, I D=20 A
-
4.7
6.0
-
1.3
1.95
W
60
120
-
S
Gate resistance
RG
Transconductance
g fs
Rev.2.2
|V DS|>2|I D|R DS(on)max,
I D=80 A
page 2
2012-12-20
IPP040N06N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2700
3375
-
670
838
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
28
56
Turn-on delay time
t d(on)
-
19
-
Rise time
tr
-
16
-
Turn-off delay time
t d(off)
-
30
-
Fall time
tf
-
9
-
Gate to source charge
Q gs
-
13
-
Gate charge at threshold
Q g(th)
-
8
-
Gate to drain charge
Q gd
-
7
9
Switching charge
Q sw
-
13
-
Gate charge total
Qg
-
38
44
Gate plateau voltage
V plateau
-
4.9
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
33
-
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
-
44
-
-
-
80
-
-
320
-
1.0
1.2
V
-
34
54
ns
-
34
-
nC
V DD=30 V, V GS=10 V,
I D=80 A, R G,ext=3 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
V R=30 V, I F=80 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.2
page 3
2012-12-20
IPP040N06N
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
100
100
80
80
ID [A]
Ptot [W]
60
60
40
40
20
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
TC [°C]
100
125
150
175
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
10
103
limited by on-state
resistance
1 µs
10 µs
102
1
0.5
ZthJC [K/W]
ID [A]
100 µs
1 ms
101
10 ms
DC
0.2
0.1
0.05
10-1
single pulse
100
10-2
10-1
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
1
tp [s]
VDS [V]
Rev.2.2
0.02
0.01
page 4
2012-12-20
IPP040N06N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
320
8
5V
10 V
280
5.5 V
6V
7
7V
240
6
6V
RDS(on) [mW]
ID [A]
200
160
5.5 V
120
80
5
7V
4
10 V
3
2
5V
40
1
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
80
VDS [V]
160
240
320
60
80
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
320
150
280
240
100
gfs [S]
ID [A]
200
160
120
50
80
40
175 °C
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.2
0
20
40
ID [A]
page 5
2012-12-20
IPP040N06N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=80 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
8
5
7.5
7
6.5
4
6
5
max
3
4.5
4
VGS(th) [V]
RDS(on) [mW]
5.5
typ
3.5
3
500 mA
50 µA
2
2.5
2
1
1.5
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
103
102
1000
IF [A]
C [pF]
Coss
25 °C
102
101
100
175 °C
Crss
101
100
10
0
20
40
60
VDS [V]
Rev.2.2
0
0.5
1
1.5
2
VSD [V]
page 6
2012-12-20
IPP040N06N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=80 A pulsed
parameter: T j(start)
parameter: V DD
12
100
30 V
10
25 °C
12 V
8
100 °C
48 V
VGS [V]
IAV [A]
125 °C
10
6
4
2
1
1
10
100
0
1000
0
10
tAV [µs]
20
30
40
50
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
VBR(DSS) [V]
66
62
V gs(th)
58
54
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.2
page 7
2012-12-20
IPP040N06N
Package Outline
Rev.2.2
PG-TO220-3
page 8
2012-12-20
IPP040N06N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.2
page 9
2012-12-20