IPD025N06N Data Sheet (615 KB, EN)

Type
IPD025N06N
OptiMOSTM Power-Transistor
Product Summary
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
VDS
60
V
RDS(on),max
2.5
mW
ID
90
A
QOSS
81
nC
QG(0V..10V)
71
nC
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPD025N06N
Package
TO-252-3
Marking
025N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
90
V GS=10 V, T C=100 °C
90
V GS=10 V, T C=25 °C,
R thJA =50K/W
26
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
360
Avalanche energy, single pulse3)
E AS
I D=90 A, R GS=25 W
210
mJ
Gate source voltage
V GS
±20
V
1)
2)
3)
J-STD20 and JESD22
See figure 3 for more detailed information
See figure 13 for more detailed information
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.3
page 1
2012-12-20
IPD025N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
Value
T C=25 °C
167
T A=25 °C,
R thJA=50 K/W
3.0
T j, T stg
W
-55 ... 175
IEC climatic category; DIN IEC 68-1
Parameter
Unit
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.9
minimal footprint
-
-
62
6 cm² cooling area4)
-
-
40
Thermal characteristics
Thermal resistance, junction - case
R thJC
Device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=95 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=90 A
-
2.1
2.5
mW
V GS=6 V, I D=22.5 A
-
2.7
3.8
-
1.7
2.6
W
80
160
-
S
Gate resistance
RG
Transconductance
g fs
Rev.2.3
|V DS|>2|I D|R DS(on)max,
I D=90 A
page 2
2012-12-20
IPD025N06N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
5200
6500
-
1200
1500
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
48
96
Turn-on delay time
t d(on)
-
16
-
Rise time
tr
-
20
-
Turn-off delay time
t d(off)
-
34
-
Fall time
tf
-
12
-
Gate to source charge
Q gs
-
24
-
Gate charge at threshold
Q g(th)
-
14
-
Gate to drain charge
Q gd
-
13
17
Switching charge
Q sw
-
23
-
Gate charge total
Qg
-
71
83
Gate plateau voltage
V plateau
-
4.7
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
62
-
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
-
81
-
-
-
90
-
-
360
-
1.0
1.2
V
-
83
133
ns
-
105
V DD=30 V, V GS=10 V,
I D=90 A,
R G,ext,ext=1.6 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=90 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=90 A,
T j=25 °C
V R=30 V, I F=I S,
di F/dt =100 A/µs
nC
See figure 16 for gate charge parameter definition
Rev.2.3
page 3
2012-12-20
IPD025N06N
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
180
100
160
80
140
120
ID [A]
Ptot [W]
60
100
80
40
60
40
20
20
0
0
0
25
50
75
100
125
150
175
200
0
25
50
TC [°C]
75
100
125
175
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
150
1
limited by on-state
resistance
1 µs
0.5
10 µs
0.2
102
100 µs
0.1
ZthJC [K/W]
ID [A]
1 ms
10 ms
101
DC
0.1
0.05
0.02
0.01
0.01
single pulse
100
10-1
10-1
100
101
102
VDS [V]
Rev.2.3
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
tp [s]
page 4
2012-12-20
IPD025N06N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
360
8
10 V
7V
6V
320
7
5.5 V
5V
280
6
5.5 V
RDS(on) [mW]
ID [A]
240
200
160
5V
5
4
6V
3
120
7V
10 V
2
80
1
40
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
40
80
120 160 200 240 280 320 360
VDS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
360
200
320
280
150
200
gfs [S]
ID [A]
240
160
100
120
50
80
175 °C
40
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.3
0
20
40
60
80
100
ID [A]
page 5
2012-12-20
IPD025N06N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=90 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
6
5
5.5
5
4
4.5
3
3.5
VGS(th) [V]
RDS(on) [mW]
4
max
3
2.5
950 mA
95 µA
2
typ
2
1.5
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
102
1000
Coss
IF [A]
C [pF]
103
25 °C
102
101
100
175 °C
Crss
101
100
10
0
20
40
60
VDS [V]
Rev.2.3
0
0.5
1
1.5
2
VSD [V]
page 6
2012-12-20
IPD025N06N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=90A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
100 °C
10
25 °C
12 V
48 V
8
VGS [V]
IAV [A]
125 °C
10
6
4
2
1
1
10
100
0
1000
0
10
tAV [µs]
20
30
40
50
60
70
80
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
66
V GS
Qg
64
VBR(DSS) [V]
62
60
V gs(th)
58
56
Q g(th)
Q sw
Q gs
54
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.3
page 7
2012-12-20
IPD025N06N
Package Outline
Rev.2.3
page 8
2012-12-20
IPD025N06N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.3
page 9
2012-12-20