HZM6.2Z4MWA Silicon Planar Zener Diode for Surge Absorb REJ03G0368-0100 Rev.1.00 Oct 01, 2004 Features • HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF Max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.2Z4MWA Laser Mark N1 Package Code MPAK Pin Arrangement 3 2 1 (Top View) Rev.1.00, Oct 01, 2004, page 1 of 4 1. Cathode 2. Cathode 3. Anode HZM6.2Z4MWA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Symbol Pd * Value 200 Unit mW Tj Tstg 150 −55 to +150 °C °C Note: Two device total, See Fig.2. Electrical Characteristics * 1 P P (Ta = 25°C) Item Zener voltage Symbol VZ Min 5.90 Typ — Max 6.50 Unit V Reverse current Capacitance IR C — — — 4.0 3 4.5 µA pF V R = 5.5 V V R = 0 V, f = 1 MHz Dynamic resistance 2 ESD-Capability * rd — — 8 — — 60 — Ω kV I Z = 5 mA C = 150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse B B P P B B B B Notes: 1. Per one device. 2. Failure criterion ; I R > 3 µA at V R = 5.5 V. B B Rev.1.00, Oct 01, 2004, page 2 of 4 B B Test Condition I Z = 5 mA, 40 ms pulse B B B B B B B B HZM6.2Z4MWA Main Characteristics 10–2 250 200 Cu Foil Power Dissipation Pd (mW) Zener Current IZ (A) 10–3 10–4 10–5 0 2 4 6 8 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 150 100 50 0 10 50 0 100 150 200 Zener Voltage VZ (V) Ambient Temperature Ta (°C) Fig.1 Zener current vs. Zener voltage Fig.2 Power Dissipation vs. Ambient Temperature Nonrepetitive Surge Reverses Power PRSM (W) 10–6 0.8mm 1.0mm 104 PRSM t 10 3 Ta = 25°C nonrepetitive 102 10 1.0 10–2 10–1 1.0 Time t 10 (ms) Fig.3 Surge Reverse Power Ratings Rev.1.00, Oct 01, 2004, page 3 of 4 102 103 HZM6.2Z4MWA Package Dimensions As of January, 2003 1.9 ± 0.2 2.8 + 0.2 – 0.6 + 0.2 1.1 – 0.1 0.3 2.8 +– 0.1 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 (0.65) 1.5 ± 0.15 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Oct 01, 2004, page 4 of 4 MPAK — Conforms 0.011 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0