HSM2694 Silicon Epitaxial Planar Diode for Tuner Band Switch REJ03G0110-0200Z (Previous: ADE-208-095A) Rev.2.00 Oct.08.2003 Features • Low forward resistance. (rf = 0.9 Ω max) • Low capacitance. (C = 1.2 pF max) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSM2694 B3 MPAK Pin Arrangement 3 2 1 (Top View) Rev.2.00, Oct.08.2003, page 1 of 4 1. Cathode 2. Cathode 3. Anode HVM2694 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 35 V 1 Power dissipation Pd * 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −45 to +125 °C Operation temperature Topr −20 to +60 °C Note: 1. Two device total Electrical Characteristics *1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 35 — — V IR = 10 µA Reverse current IR — — 50 nA VR = 25 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 1.2 pF VR = 6 V, f = 1 MHz Forward resistance rf — — 0.9 Ω IF = 2 mA, f = 100 MHz Note: 1. Per one device Rev.2.00, Oct.08.2003, page 2 of 4 HVM2694 Main Characteristic 2.0 10 f = 1MHz 1.5 Capacitance C (pF) Forward resistance rf (Ω) f = 100MHz 1.0 0.5 0 10–4 10–3 10–2 0.1 1.0 10 40 Forward current IF (A) Reverse voltage VR (V) Fig.1 Forward resistance vs. Forward current Fig.2 Capacitance vs. Reverse voltage IF = 2mA Forward resistance rf (Ω) 1.0 10 1.0 0.1 1.0 10 100 Frequency f (MHz) Fig.3 Forward resistance vs. Frequency Rev.2.00, Oct.08.2003, page 3 of 4 HVM2694 Package Dimensions As of January, 2003 1.9 ± 0.2 2.8 + 0.2 – 0.6 + 0.2 1.1 – 0.1 0.3 2.8 +– 0.1 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 (0.65) 1.5 ± 0.15 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.2.00, Oct.08.2003, page 4 of 4 MPAK — Conforms 0.011 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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