Silicon-carbide diodes http://www.st.com/sicdiodes RECTIFIERS Why silicon-carbide (SiC) Schottky diodes? • Outstanding electrical characteristics of SiC: • SiC: EBR = 200 V/µm • Si: EBR = 20 V/µm Need less thickness and resistivity to sustain the same breakdown voltage Silicon Schottky diodes are limited to ~200 V Silicon Schottky 200 V 300 V Silicon Bipolar 600 V SiC Schottky 1000 V 1200 V 1700 V Best-in-class switching performance • Advantage of SiC material: • Best-in-class switching performance thanks to the Schottky structure giving best possible efficiency Why two generations? • Differences between 600V G1 and 650V G2 SiC diodes • Higher reverse voltage with G2: more design-margin • Different positioning between surge robustness ( linked to IFSM) and forward conduction power losses (linked to VF) IFSM G2 • Ideal for use in applications with high current surge constraints (PFC circuits in server or telecom SMPS) • Ideal for use in applications without current surge issues (solar, UPS) • Brings good efficiency levels thanks to the low forwardvoltage drop. G1 • Provides the best trade-off between efficiency and robustness thanks to the high IFSM level. VF SiC diode part numbering STPSC (i)i g vv aa bb ST power Schottky SiC diode Current Generation Voltage Topology Package 4A 6A 8A 10 A 12 A 16 A 20 A blank 06 blank Gen 1 600 V Single diode H 065 C Gen 2 650 V Dual diodes Common cathode 12 1200 V TH13 G2 dual diodes in series (2 x 650 V) DPAK…………….B D²PAK………… G TO-220AB……… T TO-220AB Ins…. TI TO-220AC Ins…. DI TO-247…………. W SiC power Schottky diode range TO-247 TO-220AC TO-220AB TO-220AC insulated TO-220AB insulated D²PAK DPAK 600 V G1 4A STPSC406D 6A STPSC606D STPSC606G-TR 8A STPSC806D STPSC806G-TR 10 A STPSC1006D STPSC1006G-TR 12 A STPSC1206D 2 x 10 A STPSC406B-TR STPSC2006CW 650 V G2 4A STPSC4H065D STPSC4H065DI 6A STPSC6H065D STPSC6H065DI STPSC6H065G-TR STPSC6H065B-TR 8A STPSC8H065D STPSC8H065DI STPSC8H065G-TR STPSC8H065B-TR 10 A STPSC10H065D STPSC10H065DI STPSC10H065G-TR STPSC10H065B-TR 2x4A STPSC8H065CT 2x6A STPSC12H065CT 2x8A STPSC16H065CT 2 x 10 A STPSC20H065CW STPSC4H065B-TR STPSC20H065CT 2 x 650 V G2 6A STPSC6TH13TI 8A STPSC8TH13TI 10 A STPSC10TH13TI 1200 V 6A STPSC6H12B-TR1 Applications & topologies • Applications PC power EV charging stations Server power Telecom power UPS Motor drives Solar inverters • Typical topologies + PV VDC/ 2 N L1 A U V W L2 B C L3 VDC/ 2 PV N - Boost 3-phase circuits Dual diodes topologies • Comparison with current solutions: D5 D1 D2 S1 VAC(in) + LB CB RL VO + D4 D6 D3 S2 Example: bridgeless topology Market standard solution : 2 packages ST: 1 package (STPSCxxTH13TI) + Example: interleaved topology Market standard solution : 2 packages ST: 1 package (STPSCxxH065C) Benefits High forward surge capability (G2) High robustness Good reliability of the power converter Soft switching behaviour Low EMC impact easy design/certification Good time to market Easy design Good time to market Possibility to reduce diode caliber BOM cost reduction High power integration (dual-diodes) Low forward conduction losses / low switching losses • High efficiency high added value of the power converter • Possibility to reduce size and cost of the power converter BOM cost reduction High added value of the power converter Gain on PCB and mounting cost To know more • Visit our webpage : http://www.st.com/sicdiodes • Read our application note AN4242 “New generation 650 V SiC diodes” • http://www.st.com/st-webui/static/active/en/resource/technical/documen t/application_note/DM00075656.pdf