PROFET® BTS 6163 D
Smart Highside Power Switch
Reversave
Product Summary
Operating voltage
On-state resistance
Nominal current
Load current (ISO)
Current limitation
Package
• Reverse battery protection by self turn on of
power MOSFET
Features
• Short circuit protection with latch
• Current limitation
• Overload protection
• Thermal shutdown with restart
• Overvoltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for
charged inductive loads)
• Very low standby current
• Fast demagnetization of inductive loads
• Electrostatic discharge (ESD) protection
• Optimized static electromagnetic compatibility
(EMC)
• Green Product (RoHS compliant)
• AEC qualified
Vbb(on)
5.5 ... 62
RON
IL(nom)
IL(ISO)
IL12(SC)
V
20 mΩ
5.5
A
17
A
70
A
PG-TO252-5-11
(DPAK 5 pin; less than half the size as TO 220 SMD)
Diagnostic Function
• Proportional load current sense (with defined fault signal in case of overload operation, overtemperature
shutdown and/or short circuit shutdown)
Application
• Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
R
Voltage
source
Voltage
sensor
Overvoltage
Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
2
IN
Logic
ESD
I IN
Limit for
unclamped
ind. loads
Output
Voltage
detection
+ V bb
bb
OUT
1, 5
IL
Current
Sense
Load
Temperature
sensor
IS
PROFET
I IS
Load GND
4
VIN
V IS
R
IS
Logic GND
Data Sheet
1 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Pin
Symbol
Function
1
OUT
O
Output; output to the load; pin 1 and 5 must be externally shorted* .
2
IN
I
Input; activates the power switch if shorted to ground.
Tab/(3)
Vbb
+
Supply Voltage; positive power supply voltage; tab and pin3 are internally
shorted.
4
IS
S
Sense Output; Diagnostic feedback; provides at normal operation a sense
current proportional to the load current; in case of overload,
overtemperature and/or short circuit a defined current is provided (see
Truth Table on page 8)
5
OUT
O
Output; output to the load; pin 1 and 5 must be externally shorted* .
*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection 1)
Load dump protection VLoadDump = UA + Vs, UA = 24 V
RI= 2 Ω, RL= 4.4 Ω, td= 400 ms, IN= low or high
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation, 3)
single pulse IL = 20 A, Vbb= 24V
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Current through input pin (DC)
Current through current sense pin (DC)
Symbol
Vbb
Vbb
VLoad dump 2)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
59
A
°C
EAS
0.25
J
3.0
kV
+15, -120
+15, -120
mA
self-limited
20
V/µs
VESD
IIN
IIS
62
48
70
Unit
V
V
V
W
see internal circuit diagrams page 9
Input voltage slew rate
Vbb ≤ 16V : dVbIN / dt
Vbb > 16V 4):
1)
2)
3)
4)
Short circuit is defined as a combination of remaining resistances and inductances. See schematic on
page11.
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
See also diagram on page 11.
See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input
path. This resistor is also required for reverse operation. See also page 10.
Data Sheet
2 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Thermal Characteristics
Parameter and Conditions
Symbol
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on PCB 6):
Thermal resistance
min
----
Values
Unit
typ
max
-1.1 K/W
80
-45
55
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 24 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to pin 1,5)
VIN= 0, Vbb= 5.5V, IL = 7.5 A
Tj=25 °C: RON
Tj=150 °C:
Tj=25 °C:
Tj=150 °C:
Output voltage drop limitation at small load
currents (Tab to pin 1,5) 5)
Tj=-40...150 °C:
Nominal load current (Tab to pin 1,5)
ISO Proposal: VON ≤ 0.5 V, TC = 85°C, Tj ≤ 150°C
SMD 6), VON ≤ 0.5 V, TA = 85°C, Tj ≤ 150°C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 3.9 Ω, Tj=-40...150 °C
Slew rate on
25 to 50% VOUT, RL = 3.9 Ω, Tj=-40...150 °C
Slew rate off
50 to 25% VOUT, RL = 3.9 Ω, Tj=-40...150 °C
---
19
38
25
50
----
16
32
40
20
40
65
17
5.5
---
21.5
6.5
150
200
--300
550
dV /dton
--
0.65
1.0 V/µs
-dV/dtoff
--
0.65
1.2 V/µs
VIN= 0, Vbb= 12..24V, IL = 7.5 A
VON(NL)
IL(ISO)
IL(nom)
ton
toff
mΩ
mV
5)
See figure 7a on page 15.
6)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Data Sheet
3 of 18
A
µs
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 24 V unless otherwise specified
min.
Operating Parameters
Operating voltage (VIN=0)
Tj=-40...150 °C: Vbb(on)
Undervoltage shutdown 7) 8)
VbIN(u)
Undervoltage restart of charge pump
Vbb(ucp)
Overvoltage protection 9)
Ibb=15 mA
Standby current
IIN=0
Values
typ.
Unit
max.
5.5
---
-2.5
4
62
3.5
5.5
V
V
V
VZ,IN
68
73
--
V
Tj=-40...+120°C: Ibb(off)
Tj=150°C:
---
3
6
6
14
µA
--
--
16
V
---
19
35
25
44
mΩ
---
18
33
23
40
--
100
150
Ω
---
700
300
---
mV
--
1
--
ms
Reverse Battery
Reverse battery voltage 10)
-Vbb
On-state resistance (pin 1,5 to pin 3)
Vbb= - 8V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ, 8)
Tj=25 °C: RON(rev)
Tj=150 °C:
Vbb= -12..-24V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ,
Tj=25 °C:
Tj=150 °C:
Integrated resistor in Vbb line
Rbb
Inverse Operation 11)
Output voltage drop (pin 1,5 to pin 3) 8)
Tj=25 °C: -VON(inv)
IL = -7.5 A, RIS = 1 kΩ,
IL = -7.5 A, RIS = 1 kΩ,
Tj=150 °C:
Turn-on delay after inverse operation; IL > 0A 8)
VIN(inv) = VIN(fwd) = 0 V
td(inv)
7)
VbIN=Vbb-VIN see diagram page 14.
Not subject to production test, specified by design.
9) See also VON(CL) in circuit diagram page 9.
10) For operation at voltages higher then |16V| please see required schematic on page 10.
11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS.
In this case the device switches on with a time delay td(inv)) after the transition from inverse to forward mode.
8)
Data Sheet
4 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 24 V unless otherwise specified
Values
min.
Protection Functions 12)
Short circuit current limit (Tab to pin 1,5) 13)
Short circuit current limit at VON = 6V14)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Short circuit current limit at VON = 12V 14)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Short circuit current limit at VON = 18V 14)
Tj =-40°C:
Tj =25°C:
=+150°C:
Tj
Short circuit current limit at VON = 24V
Tj =-40°C:
tm=170µs
Tj =25°C:
=+150°C:
Tj
Short circuit current limit at VON = 30V
Tj =-40°C:
tm=170µs
Tj =25°C:
Tj =+150°C:
Short circuit current limit at VON = 45V 14)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Short circuit shutdown delay after input current
positive slope, VON > VON(SC), Tj = -40...+150°C
IL6(SC)
max.
--50
--40
--30
--25
--20
--15
90
80
65
80
70
55
55
50
48
45
40
35
30
30
30
22
22
22
110
--100
--80
--60
--50
--35
---
A
VON(SC)
2.5
3.5
4.5
V
td(SC1)
350
650
1200
µs
td(SC2)
--
2
--
µs
VON(CL)
63
67
--
V
150
--
175
10
---
°C
K
IL12(SC)
IL18(SC)
IL24(SC)
IL30(SC)
IL45(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Short circuit shutdown delay during on condition13)
VON > VON(SC)
Output clamp (inductive load switch off) 15)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
Thermal overload trip temperature
Thermal hysteresis
typ.
Unit
Tjt
∆Tjt
A
A
A
A
A
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
13) Short circuit current limit for max. duration of t
d(SC1) , prior to shutdown, see also figures 3.x on page 13.
14) Not subject to production test, specified by design.
15) See also figure 2b on page 12.
12)
Data Sheet
5 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 24 V unless otherwise specified
Values
min.
Diagnostic Characteristics
Current sense ratio, static on-condition
kILIS = IL : IIS, IIS < IIS,lim 16),
VIS <VOUT - 5 V, VbIN > 4.5 V
kILIS
typ.
Unit
max.
-- 9000
--
8300 9000 10000
8200 9000 9800
8100 8800 9500
8200 8900 10000
8100 8900 9800
8000 8700 9500
7200 8900 11000
7500 8900 10600
7700 8700 10000
5000 9500 16000
6000 10000 15000
7500 10500 13000
IL = 30A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IL = 7.5A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IL = 2.5A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IL = 0.5A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IIN = 0 (e.g. during deenergizing of inductive loads):
--
0
--
Sense current under fault conditions 17)
VON>1V, typ
Tj = -40...+150°C:
IIS,fault
4.0
5.2
7.5
mA
Tj = -40...+150°C:
IIS,lim
4.0
6.0
7.5
mA
350
650
1200
µs
Sense current saturation
VON<1V, typ
Fault-Sense signal delay after input current positive tdelay(fault)
slope, VON >1V, Tj = -40...+150°C
Current sense leakage current, IIN = 0
IIS(LL)
--
0.1
0.5
µA
Current sense offset current, VIN = 0, IL ≤ 0
Current sense settling time to IIS static after input
current positive slope, 18)
20 A, Tj= -40...+150°C
IL = 0
Current sense settling time during on condition, 18)
IL = 10
20 A, Tj= -40...+150°C
Overvoltage protection
Ibb = 15 mA
Tj = -40...+150°C:
IIS(LH)
--
1.0
2.0
µA
tson(IS)
--
250
500
µs
tslc(IS)
--
50
100
µs
VZ,IS
68
73
--
V
16)
See also figures 4.x and 6.x on page 13 and 14.
Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth
table on page 8.
18) Not subject to production test, specified by design.
17)
Data Sheet
6 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 24 V unless otherwise specified
min.
Input
Required current capability of input switch
IIN(on)
Tj =-40..+150°C:
Input current for turn-off
Tj =-40..+150°C: IIN(off)
Data Sheet
Values
7 of 18
typ.
Unit
max.
--
1.6
2.4
mA
--
--
30
µA
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Truth Table
Input
Current
level
L
H
L
H
L
H
L
H
L
H
L
H
Normal
operation
Overload 19)
Short circuit to GND 20)
Overtemperature
Short circuit to Vbb
Open load
L = "Low" Level,
H = "High" Level
Output
level
L
H
L
H
L
L
L
L
H
H
Z
H
Current
Sense
IIS
≈0 (IIS(LL))
nominal
≈0 (IIS(LL))
IIS,fault
≈0 (IIS(LL))
IIS,fault
≈0 (IIS(LL))
IIS,fault
≈0 (IIS(LL))
<nominal 21)
≈0 (IIS(LL))
≈0 (IIS(LH))
Z = high impedance, potential depends on external circuit
Terms
I bb
3
VbIN
VON
Vbb
IL
V
2
bb
OUT
IN
PROFET
RIN
V
IN
I IN
1,5
IS
VbIS
4
I IS
DS
VIS
VOUT
R IS
Two or more devices can easily be connected in
parallel to increase load current capability.
19)
Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.). See also page 11.
Short Circuit is detected at the following condition: VON > 3.5V (typ.). See also page 11.
21) Low ohmic short to V may reduce the output current I and therefore also the sense current I .
bb
L
IS
20)
Data Sheet
8 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Input circuit (ESD protection)
Inductive and overvoltage output clamp
+ Vbb
V bb
VZ1
R bb
ZD
V
V
Z,IN
V bIN
IN
ON
OUT
I
PROFET
IN
VON is clamped to VON(Cl) = 67 V typ
V IN
Overvoltage protection of logic part
ESD-Zener diode: 73 V typ.., max 15 mA;
+ Vbb
Current sense output
R IN
Vbb
Rbb
ZD
R bb
V Z,IN V
Z,IS
Normal operation
IN
Logic
V OUT
V
Z,IS
IIS,fault
PROFET
IS
IS
R
IIS
V
R
IS
IS
R
V
V
Z,VIS
Signal GND
IS
VZ,IS = 73 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as
Vout - VIS > 5V. Therefore RIS should be less than
Rbb = 100 Ω typ., VZ,IN = VZ,IS = 73 V typ., RIS = 1 kΩ
nominal. Note that when overvoltage exceeds 73 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Vbb − 5V
.
7.5mA
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Data Sheet
9 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Reversave (Reverse battery protection)
- V bb
R
Vbb disconnect with energised inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL+VD<63 V if
RIN = 0). For higher clamp voltages currents at IN and
IS have to be limited to 120 mA.
bb
IN
Version a:
OUT
R IN
Power
Transistor
Logic
V
bb
V
IN
bb
PROFET
OUT
RL
D
IS
R IS
Signal GND
VD
Power GND
RIS typ. 1 kΩ. Add RIN for reverse battery protection in
applications with Vbb above 16V;
recommended value:
V ZL
0.08 A
1
1
+
=
RIN RIS
| Vbb | −12V
To minimise power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 80mA. The current can be provided by
using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through RIS.
Since the current via Rbb generates additional heat in
the device, this has to be taken into account in the
overall thermal consideration.
Inverse load current operation
Vbb
V bb
- IL
IN
+
PROFET
V OUT +
IS
-
OUT
IIS
V IN
V IS
R IS
-
The device can be operated in inverse load current
mode (VOUT > Vbb > 0V). The current sense feature is
not available during this kind of operation (IIS = 0). In
case of inverse operation the intrinsic drain source
diode is eventually conducting resulting in considerably
increased power dissipation.
The transition from inverse to forward mode can result
in a delayed switch on.
Note: Temperature protection during inverse load
current operation is not possible!
Data Sheet
10 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Short circuit detection
Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC)
(typ.650 µs).
Inductive load switch-off energy
dissipation
E bb
E AS
Overload detection
Fault Condition: VON > 1 V typ.
V
i L(t)
V bb
+ V bb
IN
VO N
PROFET
OUT
IS
I
OUT
IN
detection
circuit
Logic
unit
ELoad
bb
ZL
RIS
L
{
RL
EL
ER
Energy stored in load inductance:
2
EL = 1/2·L·I L
Short circuit
While demagnetizing load inductance, the energy
dissipated in PROFET is
Short circuit is a combination of primary and
secondary impedance’s and a resistance’s.
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
V
5uH
bb
OUT
EAS=
L SC
IN
ln (1+ |V
IL·RL
OUT(CL)|
)
PROFET
10mOhm
IS
I
IL· L
(V + |VOUT(CL)|)
2·RL bb
Maximum allowable load inductance for
a single switch off
R SC
L = f (IL ); Tj,start = 150°C, Vbb = 24 V, RL = 0 Ω
IN
SC
V bb
Z
L
1000
L [m H ]
Allowable combinations of minimum, secondary
resistance for full protection at given secondary
inductance and supply voltage for single short circuit
event:
[uH]
15
L SC
V bb : 32V 36V
10
40V
48V
10
100
1
5
0 ,1
R SC
0
0
100
200
300
[mOhm]
0 ,0 1
1
Data Sheet
11 of 18
10
I_ L [A ] 1 0 0
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Timing diagrams
Figure 2a: Switching motors and lamps:
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IIN
IIN
VOUT
90%
t on
dV/dton
IIL
t off
10%
IL
VOUT
dV/dtoff
tslc(IS)
t slc(IS)
IIS
Load 1
IIS
tson(IS)
IIS,faut
/ I IS,lim
t
Load 2
As long as VbIS < VZ,IS the sense current will never
exceed IIS,fault and/or IIS,lim.
t
t soff(IS)
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 2b: Switching an inductive load:
IIN
VOUT
VON(CL)
IL
IIS
t
Data Sheet
12 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Figure 3a: Typ. current limitation characteristic
[A]
Figure 3c: Short circuit type two:
shut down by short circuit detection, reset by IIN = 0.
I L(SC)
IIN
80
IL
60
Internal Switch off
td(SC2)
depending on the
external impedance
VON
40
1V typ.
20
IIS
V ON
0
0 V
10
20
ON(SC)
30
[V]
IL
k ilis
50
In case of VON > VON(SC) (typ. 3.5 V) the device will
be switched off by internal short circuit detection.
Figure 3b: Short circuit type one:
shut down by short circuit detection, reset by IIN = 0.
IS,fault
t
Shut down remains latched until next reset via input.
Figure 4a: Overtemperature
Reset if Tj<Tjt
IIN
IL
I
IIN
VON > VON(SC)
IL(SC)
IIS
IIS,fault
td(SC1)
tm
VOUT
Auto Restart
IIS
I
IS,fault
tdelay(fault)
t
Shut down remains latched until next reset via input.
Tj
t
Data Sheet
13 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Figure 4b: Overload
Tj<Tjt
Figure 6a: Current sense versus load current:
[mA] I IS
I IS,lim
4
IIN
IL
3
Vbb -V OUT
I L,lim
2
VON=1V typ.
RON *I L,lim
1
IS
t
IL
k ilis
IIS,lim
I IS(LH)
0
0
IL
10
20
30
40
[A]
IIS,fault
Figure 6b: Current sense ratio22:
Figure 5a: Undervoltage restart of charge pump,
overvoltage clamp
kILIS
VOUT
20000
VIN = 0
15000
V
dynamic, short
Undervoltage
not below
ON(CL)
10000
VbIN(u)
5000
IL
IIN = 0
0
VON(CL)
0
0
V bIN(u)
V bIN(ucp)
10
10
20
[A] 30
V12
bb
22
Data Sheet
5
14 of 18
This range for the current sense ratio refers to all
devices. The accuracy of the kILIS can be raised by
means of calibration the value of kILIS for every
single device.
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Figure 7a: Output voltage drop versus load current:
[V]
0.1
VON
R
ON
V
ON(NL)
0.05
IL
0.0
0
Data Sheet
1
2
3
4
5
6
7
[A]
15 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Package Outlines
All dimensions in mm
D-Pak-5 Pin: PG-TO252-5-11
Sales Code
BTS6163D
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Data Sheet
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Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Revision History
Version
Date
Changes
Rev. 1.0
2007-02-21
RoHS-compliant version of BTS6163D
Page 1, page 16: RoHS compliance statement and Green product feature added
Page 1, page 16: Change to RoHS compliant package PG-TO252-5-11
Legal disclaimer updated
Data Sheet
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Rev. 1.0, 2007-07-23
Edition 2007-07-23
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.