INFINEON BTS6133D

PROFET® Data sheet BTS 6133 D
Smart Highside Power Switch
Reversave
Product Summary
Operating voltage
On-state resistance
Nominal current
Load current (ISO)
Current limitation
Package
• Reverse battery protection by self turn on of
power MOSFET
Inversave
• Inverse operation by self turn on of power
MOSFET
Vbb(on)
5.5 ... 38
RON
IL(nom)
IL(ISO)
V
10 mΩ
8
A
33
A
75
A
IL12(SC)
• Short circuit protection with latch
• Current limitation
TO-252-5-1
• Overload protection
(DPAK 5 pin; less than half the size as TO 220 SMD)
• Thermal shutdown with restart
• Overvoltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for
charged inductive loads)
• Very low standby current
• Fast demagnetisation of inductive loads
• Electrostatic discharge (ESD) protection
• Optimized static electromagnetic compatibility (EMC)
Features
Diagnostic Function
• Proportional load current sense (with defined fault signal in case of overload operation, overtemperature
shutdown and/or short circuit shutdown)
Application
• Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
R
Voltage
source
Voltage
sensor
Overvoltage
Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
2
IN
Logic
ESD
I IN
Limit for
unclamped
ind. loads
Output
Voltage
detection
+ V bb
bb
OUT
1, 5
IL
Current
Sense
Load
Temperature
sensor
IS

PROFET
I IS
Load GND
4
VIN
V IS
R
IS
Logic GND
Infineon Technologies AG
Page 1 of 15
2003-Oct-01
Data sheet BTS 6133 D
Pin
Symbol
Function
1
OUT
O
Output; output to the load; pin 1 and 5 must be externally
shorted* .
2
IN
I
Input; activates the power switch if shorted to ground.
Tab/(3)
Vbb
+
Supply Voltage; positive power supply voltage; tab and pin3
are internally shorted.
4
IS
S
Sense Output; Diagnostic feedback; provides at normal
operation a sense current proportional to the load current; in
case of overload, overtemperature and/or short circuit a
defined current is provided (see Truth Table on page 8)
5
OUT
O
Output; output to the load; pin 1 and 5 must be externally
shorted* .
*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection 1)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.5 Ω, td= 400 ms, IN= low or high
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation 3)
single pulse IL = 20 A, Vbb= 12V
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Current through input pin (DC)
Current through current sense pin (DC)
Symbol
Vbb
Vbb
VLoad dump2)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
59
A
°C
0.3
3.0
J
kV
+15, -120
+15, -120
mA
self-limited
20
V/µs
EAS
VESD
IIN
IIS
38
30
45
Unit
V
V
V
W
see internal circuit diagrams page 9
Input voltage slew rate
Vbb ≤ 16V : dVbIN / dt
Vbb > 16V 4):
1)
2)
3)
4)
Short circuit is defined as a combination of remaining resistances and inductances. See schematic on
page11.
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
See also diagram on page 11.
See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input
path. This resistor is also required for reverse operation. See also page 10.
Infineon Technologies AG
Page 2 of 15
2003-Oct-01
Data sheet BTS 6133 D
Thermal Characteristics
Parameter and Conditions
Symbol
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on PCB 5):
Thermal resistance
min
----
Values
typ
max
-1.1
80
-45
55
Unit
K/W
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to pin 1,5)
VIN= 0, Vbb= 5.5V, IL = 7.5 A
Tj=25 °C: RON
Tj=150 °C:
---
10
18
14
26
VIN= 0, Vbb= 12V, IL = 7.5 A
Tj=25 °C:
Tj=150 °C:
---
8
14
10
18
33
8
---
41
10
250
250
--500
500
dV /dton
--
0.3
0.5
V/µs
-dV/dtoff
--
0.3
0.6
V/µs
Nominal load current (Tab to pin 1,5)
ISO Proposal: VON ≤ 0.5 V, TC = 85°C, Tj ≤ 150°C
SMD 5): VON ≤ 0.5 V, TA = 85°C, Tj ≤ 150°C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 2.2 Ω, Tj=-40...150 °C
Slew rate on
25 to 50% VOUT, RL = 2.2 Ω, Tj=-40...150 °C
Slew rate off
50 to 25% VOUT, RL = 2.2 Ω, Tj=-40...150 °C
5)
IL(ISO)
IL(nom)
ton
toff
mΩ
A
µs
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 3 of 15
2003-Oct-01
Data sheet BTS 6133 D
Parameter and Conditions
Symbol
Values
min
typ
max
Vbb(on)
VbIN(u)
Vbb(ucp)
VZ,IN
5.5
---
-2.5
4
38
3.5
5.5
63
67
--
Ibb(off)
---
3
6
6
14
µA
-Vbb
--
--
16
V
---
9.5
16
13
22
mΩ
---
9
15
12
21
--
100
150
Ω
---
8
14
10
18
mΩ
-----
---0.3
45
30
14
--
A
at Tj= 25, Vbb = 12 V unless otherwise specified
Operating Parameters
Operating voltage (VIN=0)
Tj=-40...150 °C:
Undervoltage shutdown 6) 7)
Undervoltage restart of charge pump
Overvoltage protection 8)
Tj=-40...+150°C :
Ibb=15 mA
Standby current
Tj=-40...+120°C:
Tj=150°C:
IIN=0
Unit
V
V
V
V
Reverse Battery
Reverse battery voltage 9)
On-state resistance (pin 1,5 to pin 3)
Vbb= - 8V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ, 7)
Tj=25 °C: RON(rev)
Tj=150 °C:
Vbb= -12V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ, Tj=25 °C:
Tj=150 °C:
Integrated resistor in Vbb line
Rbb
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3) 7)
VbIN = 12 V, IL = - 7.5 A
Tj = 25 °C: RON(inv)
See diagram on page 10
Tj = 150 °C:
Maximum transient inverse load current 7) 10)
- IL(inv)
(Pins 1,5 to Tab)
Tj = 25 °C
Tj = 85 °C
Tj = 150 °C
Drain-source diode voltage (+Vout > +Vbb) 7)
IL = - 7.5 A, IIN = 0, Tj = 150°C
-VON
V
6)
VbIN=Vbb-VIN see schematic on page 8 and on page 14.
not subject to production test, specified by design
8) See also VZ,IN in schematic on page 9.
9) For operation at voltages higher then |16V| please see required schematic on page 10.
10) Operation above these limits might cause a switch off of the device after the transition from inverse to
forward mode. In this case the device switches on again after a time delay of typ.1 msec .
7)
Infineon Technologies AG
Page 4 of 15
2003-Oct-01
Data sheet BTS 6133 D
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 12 V unless otherwise specified
Protection Functions 11)
Short circuit current limit (Tab to pin 1,5) 12)
Short circuit current limit at VON = 6V 13)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Short circuit current limit at VON = 12V
Tj(start) =-40°C:
tm=170µs
Tj(start) =25°C:
Tj(start) =+150°C:
Short circuit current limit at VON = 18V 13) Tj(start) =-40°C:
Tj(start) =25°C:
Tj(start) =+150°C:
Short circuit current limit at VON = 24V
Tj(start) =-40°C:
tm=170µs
Tj(start) =25°C:
Tj(start) =+150°C:
Short circuit current limit at VON = 30V 13) Tj(start) =-40°C:
Tj(start) =25°C:
Tj(start) =+150°C:
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Short circuit shutdown delay after input current
positive slope, VON > VON(SC), Tj = -40...+150°C
IL6(SC)
Unit
--70
--45
--33
--20
--15
110
105
90
80
75
60
60
55
50
40
40
35
25
25
25
140
--110
--80
--60
--40
---
A
VON(SC)
2.5
3.5
4.5
V
td(SC1)
350
650
1200
µs
td(SC2)
--
2
--
µs
VON(CL)
39
42
--
V
150
--
175
10
---
°C
K
IL12(SC)
IL18(SC)
IL24(SC)
IL30(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Short circuit shutdown delay during on condition13)
VON > VON(SC)
Output clamp (inductive load switch off) 14)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
Thermal overload trip temperature
Thermal hysteresis
Values
min
typ
max
Tjt
∆Tjt
A
A
A
A
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
12) Short circuit current limit for max. duration of t
d(SC1) , prior to shutdown, see also figures 3.x on page 13.
13) not subject to production test, specified by design
14) See also figure 2b on page 12.
11)
Infineon Technologies AG
Page 5 of 15
2003-Oct-01
Data sheet BTS 6133 D
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 12 V unless otherwise specified
Diagnostic Characteristics
Current sense ratio, static on-condition
kILIS = IL : IIS, IIS < IIS,lim 15),
VIS <VOUT - 5 V, VbIN > 4.5 V
KILIS
IL = 30A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IL = 7.5A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IL = 2.5A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IIN = 0 (e.g. during deenergizing of inductive loads):
Values
min
typ
max
-- 10 000
Unit
--
8300 10000 11000
8300 9700 10600
8300 9300 10000
7500 10000 11400
8000 9700 10800
8200 9300 10200
6100 10000 14200
6500 9700 12800
7600 9300 11500
--
0
--
Sense current under fault conditions 16)
VON>1V, typ
Tj = -40...+150°C:
IIS,fault
4.0
5.2
7.5
mA
Tj = -40...+150°C:
IIS,lim
4.0
6.0
7.5
mA
350
650
1200
µs
Sense saturation current
VON<1V, typ
Fault-Sense signal delay after input current positive tdelay(fault)
slope, VON >1V, Tj = -40...+150°C
Current sense leakage current, IIN = 0
IIS(LL)
--
0.1
0.5
µA
Current sense offset current, VIN = 0, IL ≤ 0
Current sense settling time to IIS static after input
current positive slope, 17)
20 A, Tj= -40...+150°C
IL = 0
Current sense settling time during on condition, 17)
IL = 10
20 A, Tj= -40...+150°C
Overvoltage protection
Ibb = 15 mA
Tj = -40...+150°C:
IIS(LH)
--
1
60
µA
tson(IS)
--
250
500
µs
tslc(IS)
--
50
100
µs
VZ,IS
63
67
--
V
15)
See also figures 4.x and 6.x on page 13 and 14.
Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth
table on page 8.
17) not subject to production test, specified by design
16)
Infineon Technologies AG
Page 6 of 15
2003-Oct-01
Data sheet BTS 6133 D
Parameter and Conditions
Symbol
at Tj= 25, Vbb = 12 V unless otherwise specified
Input
Required current capability of input switch
IIN(on)
Tj =-40..+150°C:
Input current for turn-off
Tj =-40..+150°C: IIN(off)
Infineon Technologies AG
Page 7 of 15
Values
min
typ
max
Unit
--
1.4
2.2
mA
--
--
30
µA
2003-Oct-01
Data sheet BTS 6133 D
Truth Table
Normal
operation
Overload 18)
Short circuit to GND 19)
Overtemperature
Short circuit to Vbb
Input
Current
level
L
H
L
H
L
H
L
H
L
H
Output
L
H
Z
H
Open load
L = "Low" Level
H = "High" Level
level
L
H
L
H
L
L
L
L
H
H
Current
Sense
IIS
≈0 (IIS(LL))
nominal
≈0 (IIS(LL))
IIS,fault
≈0 (IIS(LL))
IIS,fault
≈0 (IIS(LL))
IIS,fault
≈0 (IIS(LL))
<nominal 20)
≈0 (IIS(LL))
≈0 (IIS(LH))
Z = high impedance, potential depends on external circuit
Terms
I bb
3
VbIN
VON
Vbb
IL
V
2
bb
OUT
IN
PROFET
RIN
V
IN
I IN
1,5
IS
VbIS
4
I IS
DS
VIS
VOUT
R IS
Two or more devices can easily be connected in
parallel to increase load current capability.
18)
Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.) . See also page 11.
Short Circuit is detected at the following condition: VON > 3.5V (typ.) . See also page 11.
20) Low ohmic short to V may reduce the output current I and therefore also the sense current I .
bb
L
IS
19)
Infineon Technologies AG
Page 8 of 15
2003-Oct-01
Data sheet BTS 6133 D
Input circuit (ESD protection)
Inductive and overvoltage output clamp
+ Vbb
V bb
V
R bb
ZD
V
VZ1
ON
Z,IN
V bIN
OUT
IN
I
PROFET
IN
VON is clamped to VON(Cl) = 42 V typ
V IN
Overvoltage protection of logic part
ESD-Zener diode: 67 V typ., max 15 mA;
+ Vbb
Current sense output
R IN
Vbb
Rbb
ZD
R bb
V Z,IN V
Z,IS
Normal operation
IN
Logic
V OUT
V
Z,IS
IIS,fault
PROFET
IS
IS
R
IIS
V
R
IS
IS
R
V
V
Z,VIS
Signal GND
IS
VZ,IS = 67 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as
Vout - VIS > 5V. Therefore RIS should be less than
Rbb = 100 Ω typ., VZ,IN = VZ,IS = 67 V typ., RIS = 1 kΩ
nominal. Note that when overvoltage exceeds 67 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Vbb − 5V
.
7.5mA
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Infineon Technologies AG
9 of 15
2003-Oct-01
Data sheet BTS 6133 D
Reversave (Reverse battery protection)
- V bb
R
Vbb disconnect with energised inductive
load
bb
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL+VD<39 V if
RIN = 0). For higher clamp voltages currents at IN and
IS have to be limited to 120 mA.
IN
OUT
R IN
Power
Transistor
Logic
Note: Temperature protection during inverse load
current operation is not possible!
Version a:
V
RL
D
R IS
bb
V
IN
Signal GND
bb
PROFET
OUT
Power GND
IS
RIS typ. 1 kΩ. Add RIN for reverse battery protection in
applications with Vbb above 16V;
recommended value:
0.08 A
1
1
+
=
RIN RIS
| Vbb | −12V
VD
V ZL
To minimise power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 80mA. The current can be provided by
using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through RIS.
Since the current via Rbb generates additional heat in
the device, this has to be taken into account in the
overall thermal consideration.
Inversave (Inverse current operation)
Vbb
V bb
- IL
IN
+
PROFET
V OUT +
IS
-
OUT
IIS
V IN
V IS
R IS
-
The device can be operated in inverse load current
mode (VOUT > Vbb > 0V). The current sense feature is
not available during this kind of operation (IIS= IIS(LH)).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), the power dissipation is decreased to the
much lower value RON(INV) * I2 as long as a maximum
current IL(inv) is not exceeded(see on p4).
Infineon Technologies AG
10 of 15
2003-Oct-01
Data sheet BTS 6133 D
Short circuit detection
Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC)
(typ.650 µs).
Inductive load switch-off energy
dissipation
E bb
E AS
Overload detection
Fault Condition: VON > 1 V typ.
V
i L(t)
V bb
+ V bb
ELoad
bb
IN
VO N
PROFET
IS
I
OUT
IN
ZL
RIS
detection
circuit
Logic
unit
OUT
L
{
RL
EL
ER
Energy stored in load inductance:
2
EL = 1/2·L·I L
Short circuit
While demagnetising load inductance, the energy
dissipated in PROFET is
Short circuit is a combination of primary and
secondary impedance’s and a resistance’s.
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
V
5uH
bb
OUT
EAS=
L SC
IN
PROFET
10mOhm
IS
I
IL· L
(V + |VOUT(CL)|)
2·RL bb
ln (1+ |V
IL·RL
OUT(CL)|
)
Maximum allowable load inductance for
a single switch off
R SC
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
IN
SC
V bb
Z
1000
L
L [m H ]
Allowable combinations of minimum, secondary
resistance for full protection at given secondary
inductance and supply voltage for single short circuit
event:
[uH]
15
L SC
V bb : 16V
24V
18V
100
10
30V
1
10
0,1
5
R SC
0
0
100
200
Infineon Technologies AG
300
[mOhm]
11 of 15
0,01
1
10
I_L [A ] 100
2003-Oct-01
Data sheet BTS 6133 D
Timing diagrams
Figure 2a: Switching motors and lamps:
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IIN
IIN
VOUT
90%
t on
dV/dton
IIL
t off
10%
IL
VOUT
dV/dtoff
tslc(IS)
t slc(IS)
IIS
IIS,faut
/ I IS,lim
t
Load 1
IIS
Load 2
tson(IS)
t
t soff(IS)
As long as VbIS < VZ,IS the sense current will never
exceed IIS,fault and/or IIS,lim.
Figure 2b: Switching an inductive load:
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
IIN
VOUT
VON(CL)
IL
IIS
t
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12 of 15
2003-Oct-01
Data sheet BTS 6133 D
Figure 3c: Short circuit type two:
shut down by short circuit detection, reset by IIN = 0.
Figure 3a: Typ. current limitation characteristic
[A]
I L(SC)
IIN
100
IL
80
60
Internal Switch off
td(SC2)
depending on the
external impedance
VON
40
1V typ.
20
IIS
V ON
0
0 V
10
20
ON(SC)
30
IL
[V]
In case of VON > VON(SC) (typ. 3.5 V) the device will
be switched off by internal short circuit detection.
Figure 3b: Short circuit type one:
shut down by short circuit detection, reset by IIN = 0.
IS,fault
t
Shut down remains latched until next reset via input.
Figure 4a: Overtemperature
Reset if Tj<Tjt
IIN
IL
I
k ilis
IIN
VON > VON(SC)
IL(SC)
IIS
I
IS,fault
td(SC1)
tm
VOUT
Auto Restart
IIS
I
IS,fault
tdelay(fault)
t
Shut down remains latched until next reset via input.
Tj
t
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13 of 15
2003-Oct-01
Data sheet BTS 6133 D
Figure 4b: Overload
Tj<Tjt
Figure 6a: Current sense versus load current:
[mA] I IS
I IS,lim
4
IIN
IL
3
Vbb -V OUT
I L,lim
2
VON=1V typ.
RON *I L,lim
IS
1
t
IL
k ilis
IIS,lim
I IS(LH)
0
0
IL
10
20
30
40
[A]
IIS,fault
Figure 5a: Undervoltage restart of charge pump,
overvoltage clamp
Figure 6b: Current sense ratio21:
VOUT
15000
VIN = 0
kILIS
10000
V
dynamic, short
Undervoltage
not below
ON(CL)
5000
VbIN(u)
0
IIN = 0
0
VbIN(u)
VbIN(ucp)
10
5
10
20
I L (MIN) = I IS(LH) ·k ILIS (max@30A)
V12
bb
21
Infineon Technologies AG
0
Approximate solution for worst case, minimum
detectable load current:
VON(CL)
0
[A] IL
14 of 15
This range for the current sense ratio refers to all
devices. The accuracy of the kILIS can be raised by
means of calibration the value of kILIS for every
single device.
2003-Oct-01
Data sheet BTS 6133 D
Package and Ordering Code
All dimensions in mm
D-Pak-5 Pin: TO-252-5-1
Sales Code
BTS6133D
Ordering code
Q67060-S6072-A101
2.3 +0.05
-0.10
B
5.4 ±0.1
1 ±0.1
0...0.15
0.5 +0.08
-0.04
5x0.6 ±0.1
1.14
4.56
0.9 +0.08
-0.04
0.51 min
0.15 max
per side
A
0.8 ±0.15
(4.17)
9.9 ±0.5
6.22 -0.2
1 ±0.1
6.5 +0.15
-0.10
0.1
0.25
M
A B
GPT09161
All metal surfaces tin plated, except area of cut.
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they
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Infineon Technologies AG
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2003-Oct-01