PROFET® Data sheet BTS 6133 D Smart Highside Power Switch Reversave Product Summary Operating voltage On-state resistance Nominal current Load current (ISO) Current limitation Package • Reverse battery protection by self turn on of power MOSFET Inversave • Inverse operation by self turn on of power MOSFET Vbb(on) 5.5 ... 38 RON IL(nom) IL(ISO) V 10 mΩ 8 A 33 A 75 A IL12(SC) • Short circuit protection with latch • Current limitation TO-252-5-1 • Overload protection (DPAK 5 pin; less than half the size as TO 220 SMD) • Thermal shutdown with restart • Overvoltage protection (including load dump) • Loss of ground protection • Loss of Vbb protection (with external diode for charged inductive loads) • Very low standby current • Fast demagnetisation of inductive loads • Electrostatic discharge (ESD) protection • Optimized static electromagnetic compatibility (EMC) Features Diagnostic Function • Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Application • Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab R Voltage source Voltage sensor Overvoltage Current Gate protection limit protection Charge pump Level shifter Rectifier 2 IN Logic ESD I IN Limit for unclamped ind. loads Output Voltage detection + V bb bb OUT 1, 5 IL Current Sense Load Temperature sensor IS PROFET I IS Load GND 4 VIN V IS R IS Logic GND Infineon Technologies AG Page 1 of 15 2003-Oct-01 Data sheet BTS 6133 D Pin Symbol Function 1 OUT O Output; output to the load; pin 1 and 5 must be externally shorted* . 2 IN I Input; activates the power switch if shorted to ground. Tab/(3) Vbb + Supply Voltage; positive power supply voltage; tab and pin3 are internally shorted. 4 IS S Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) 5 OUT O Output; output to the load; pin 1 and 5 must be externally shorted* . *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection 1) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1.5 Ω, td= 400 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation 3) single pulse IL = 20 A, Vbb= 12V Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Current through input pin (DC) Current through current sense pin (DC) Symbol Vbb Vbb VLoad dump2) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 59 A °C 0.3 3.0 J kV +15, -120 +15, -120 mA self-limited 20 V/µs EAS VESD IIN IIS 38 30 45 Unit V V V W see internal circuit diagrams page 9 Input voltage slew rate Vbb ≤ 16V : dVbIN / dt Vbb > 16V 4): 1) 2) 3) 4) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 See also diagram on page 11. See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also page 10. Infineon Technologies AG Page 2 of 15 2003-Oct-01 Data sheet BTS 6133 D Thermal Characteristics Parameter and Conditions Symbol chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB 5): Thermal resistance min ---- Values typ max -1.1 80 -45 55 Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj= 25, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) VIN= 0, Vbb= 5.5V, IL = 7.5 A Tj=25 °C: RON Tj=150 °C: --- 10 18 14 26 VIN= 0, Vbb= 12V, IL = 7.5 A Tj=25 °C: Tj=150 °C: --- 8 14 10 18 33 8 --- 41 10 250 250 --500 500 dV /dton -- 0.3 0.5 V/µs -dV/dtoff -- 0.3 0.6 V/µs Nominal load current (Tab to pin 1,5) ISO Proposal: VON ≤ 0.5 V, TC = 85°C, Tj ≤ 150°C SMD 5): VON ≤ 0.5 V, TA = 85°C, Tj ≤ 150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 2.2 Ω, Tj=-40...150 °C Slew rate on 25 to 50% VOUT, RL = 2.2 Ω, Tj=-40...150 °C Slew rate off 50 to 25% VOUT, RL = 2.2 Ω, Tj=-40...150 °C 5) IL(ISO) IL(nom) ton toff mΩ A µs Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG Page 3 of 15 2003-Oct-01 Data sheet BTS 6133 D Parameter and Conditions Symbol Values min typ max Vbb(on) VbIN(u) Vbb(ucp) VZ,IN 5.5 --- -2.5 4 38 3.5 5.5 63 67 -- Ibb(off) --- 3 6 6 14 µA -Vbb -- -- 16 V --- 9.5 16 13 22 mΩ --- 9 15 12 21 -- 100 150 Ω --- 8 14 10 18 mΩ ----- ---0.3 45 30 14 -- A at Tj= 25, Vbb = 12 V unless otherwise specified Operating Parameters Operating voltage (VIN=0) Tj=-40...150 °C: Undervoltage shutdown 6) 7) Undervoltage restart of charge pump Overvoltage protection 8) Tj=-40...+150°C : Ibb=15 mA Standby current Tj=-40...+120°C: Tj=150°C: IIN=0 Unit V V V V Reverse Battery Reverse battery voltage 9) On-state resistance (pin 1,5 to pin 3) Vbb= - 8V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ, 7) Tj=25 °C: RON(rev) Tj=150 °C: Vbb= -12V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ, Tj=25 °C: Tj=150 °C: Integrated resistor in Vbb line Rbb Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) 7) VbIN = 12 V, IL = - 7.5 A Tj = 25 °C: RON(inv) See diagram on page 10 Tj = 150 °C: Maximum transient inverse load current 7) 10) - IL(inv) (Pins 1,5 to Tab) Tj = 25 °C Tj = 85 °C Tj = 150 °C Drain-source diode voltage (+Vout > +Vbb) 7) IL = - 7.5 A, IIN = 0, Tj = 150°C -VON V 6) VbIN=Vbb-VIN see schematic on page 8 and on page 14. not subject to production test, specified by design 8) See also VZ,IN in schematic on page 9. 9) For operation at voltages higher then |16V| please see required schematic on page 10. 10) Operation above these limits might cause a switch off of the device after the transition from inverse to forward mode. In this case the device switches on again after a time delay of typ.1 msec . 7) Infineon Technologies AG Page 4 of 15 2003-Oct-01 Data sheet BTS 6133 D Parameter and Conditions Symbol at Tj= 25, Vbb = 12 V unless otherwise specified Protection Functions 11) Short circuit current limit (Tab to pin 1,5) 12) Short circuit current limit at VON = 6V 13) Tj =-40°C: Tj =25°C: Tj =+150°C: Short circuit current limit at VON = 12V Tj(start) =-40°C: tm=170µs Tj(start) =25°C: Tj(start) =+150°C: Short circuit current limit at VON = 18V 13) Tj(start) =-40°C: Tj(start) =25°C: Tj(start) =+150°C: Short circuit current limit at VON = 24V Tj(start) =-40°C: tm=170µs Tj(start) =25°C: Tj(start) =+150°C: Short circuit current limit at VON = 30V 13) Tj(start) =-40°C: Tj(start) =25°C: Tj(start) =+150°C: Short circuit shutdown detection voltage (pin 3 to pins 1,5) Short circuit shutdown delay after input current positive slope, VON > VON(SC), Tj = -40...+150°C IL6(SC) Unit --70 --45 --33 --20 --15 110 105 90 80 75 60 60 55 50 40 40 35 25 25 25 140 --110 --80 --60 --40 --- A VON(SC) 2.5 3.5 4.5 V td(SC1) 350 650 1200 µs td(SC2) -- 2 -- µs VON(CL) 39 42 -- V 150 -- 175 10 --- °C K IL12(SC) IL18(SC) IL24(SC) IL30(SC) min. value valid only if input "off-signal" time exceeds 30 µs Short circuit shutdown delay during on condition13) VON > VON(SC) Output clamp (inductive load switch off) 14) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Thermal overload trip temperature Thermal hysteresis Values min typ max Tjt ∆Tjt A A A A Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 12) Short circuit current limit for max. duration of t d(SC1) , prior to shutdown, see also figures 3.x on page 13. 13) not subject to production test, specified by design 14) See also figure 2b on page 12. 11) Infineon Technologies AG Page 5 of 15 2003-Oct-01 Data sheet BTS 6133 D Parameter and Conditions Symbol at Tj= 25, Vbb = 12 V unless otherwise specified Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS, IIS < IIS,lim 15), VIS <VOUT - 5 V, VbIN > 4.5 V KILIS IL = 30A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 7.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 2.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IIN = 0 (e.g. during deenergizing of inductive loads): Values min typ max -- 10 000 Unit -- 8300 10000 11000 8300 9700 10600 8300 9300 10000 7500 10000 11400 8000 9700 10800 8200 9300 10200 6100 10000 14200 6500 9700 12800 7600 9300 11500 -- 0 -- Sense current under fault conditions 16) VON>1V, typ Tj = -40...+150°C: IIS,fault 4.0 5.2 7.5 mA Tj = -40...+150°C: IIS,lim 4.0 6.0 7.5 mA 350 650 1200 µs Sense saturation current VON<1V, typ Fault-Sense signal delay after input current positive tdelay(fault) slope, VON >1V, Tj = -40...+150°C Current sense leakage current, IIN = 0 IIS(LL) -- 0.1 0.5 µA Current sense offset current, VIN = 0, IL ≤ 0 Current sense settling time to IIS static after input current positive slope, 17) 20 A, Tj= -40...+150°C IL = 0 Current sense settling time during on condition, 17) IL = 10 20 A, Tj= -40...+150°C Overvoltage protection Ibb = 15 mA Tj = -40...+150°C: IIS(LH) -- 1 60 µA tson(IS) -- 250 500 µs tslc(IS) -- 50 100 µs VZ,IS 63 67 -- V 15) See also figures 4.x and 6.x on page 13 and 14. Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth table on page 8. 17) not subject to production test, specified by design 16) Infineon Technologies AG Page 6 of 15 2003-Oct-01 Data sheet BTS 6133 D Parameter and Conditions Symbol at Tj= 25, Vbb = 12 V unless otherwise specified Input Required current capability of input switch IIN(on) Tj =-40..+150°C: Input current for turn-off Tj =-40..+150°C: IIN(off) Infineon Technologies AG Page 7 of 15 Values min typ max Unit -- 1.4 2.2 mA -- -- 30 µA 2003-Oct-01 Data sheet BTS 6133 D Truth Table Normal operation Overload 18) Short circuit to GND 19) Overtemperature Short circuit to Vbb Input Current level L H L H L H L H L H Output L H Z H Open load L = "Low" Level H = "High" Level level L H L H L L L L H H Current Sense IIS ≈0 (IIS(LL)) nominal ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) <nominal 20) ≈0 (IIS(LL)) ≈0 (IIS(LH)) Z = high impedance, potential depends on external circuit Terms I bb 3 VbIN VON Vbb IL V 2 bb OUT IN PROFET RIN V IN I IN 1,5 IS VbIS 4 I IS DS VIS VOUT R IS Two or more devices can easily be connected in parallel to increase load current capability. 18) Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.) . See also page 11. Short Circuit is detected at the following condition: VON > 3.5V (typ.) . See also page 11. 20) Low ohmic short to V may reduce the output current I and therefore also the sense current I . bb L IS 19) Infineon Technologies AG Page 8 of 15 2003-Oct-01 Data sheet BTS 6133 D Input circuit (ESD protection) Inductive and overvoltage output clamp + Vbb V bb V R bb ZD V VZ1 ON Z,IN V bIN OUT IN I PROFET IN VON is clamped to VON(Cl) = 42 V typ V IN Overvoltage protection of logic part ESD-Zener diode: 67 V typ., max 15 mA; + Vbb Current sense output R IN Vbb Rbb ZD R bb V Z,IN V Z,IS Normal operation IN Logic V OUT V Z,IS IIS,fault PROFET IS IS R IIS V R IS IS R V V Z,VIS Signal GND IS VZ,IS = 67 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. Therefore RIS should be less than Rbb = 100 Ω typ., VZ,IN = VZ,IS = 67 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 67 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Vbb − 5V . 7.5mA Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Infineon Technologies AG 9 of 15 2003-Oct-01 Data sheet BTS 6133 D Reversave (Reverse battery protection) - V bb R Vbb disconnect with energised inductive load bb Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD<39 V if RIN = 0). For higher clamp voltages currents at IN and IS have to be limited to 120 mA. IN OUT R IN Power Transistor Logic Note: Temperature protection during inverse load current operation is not possible! Version a: V RL D R IS bb V IN Signal GND bb PROFET OUT Power GND IS RIS typ. 1 kΩ. Add RIN for reverse battery protection in applications with Vbb above 16V; recommended value: 0.08 A 1 1 + = RIN RIS | Vbb | −12V VD V ZL To minimise power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 80mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS. Since the current via Rbb generates additional heat in the device, this has to be taken into account in the overall thermal consideration. Inversave (Inverse current operation) Vbb V bb - IL IN + PROFET V OUT + IS - OUT IIS V IN V IS R IS - The device can be operated in inverse load current mode (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS= IIS(LH)). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), the power dissipation is decreased to the much lower value RON(INV) * I2 as long as a maximum current IL(inv) is not exceeded(see on p4). Infineon Technologies AG 10 of 15 2003-Oct-01 Data sheet BTS 6133 D Short circuit detection Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC) (typ.650 µs). Inductive load switch-off energy dissipation E bb E AS Overload detection Fault Condition: VON > 1 V typ. V i L(t) V bb + V bb ELoad bb IN VO N PROFET IS I OUT IN ZL RIS detection circuit Logic unit OUT L { RL EL ER Energy stored in load inductance: 2 EL = 1/2·L·I L Short circuit While demagnetising load inductance, the energy dissipated in PROFET is Short circuit is a combination of primary and secondary impedance’s and a resistance’s. EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: V 5uH bb OUT EAS= L SC IN PROFET 10mOhm IS I IL· L (V + |VOUT(CL)|) 2·RL bb ln (1+ |V IL·RL OUT(CL)| ) Maximum allowable load inductance for a single switch off R SC L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω IN SC V bb Z 1000 L L [m H ] Allowable combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event: [uH] 15 L SC V bb : 16V 24V 18V 100 10 30V 1 10 0,1 5 R SC 0 0 100 200 Infineon Technologies AG 300 [mOhm] 11 of 15 0,01 1 10 I_L [A ] 100 2003-Oct-01 Data sheet BTS 6133 D Timing diagrams Figure 2a: Switching motors and lamps: Figure 1a: Switching a resistive load, change of load current in on-condition: IIN IIN VOUT 90% t on dV/dton IIL t off 10% IL VOUT dV/dtoff tslc(IS) t slc(IS) IIS IIS,faut / I IS,lim t Load 1 IIS Load 2 tson(IS) t t soff(IS) As long as VbIS < VZ,IS the sense current will never exceed IIS,fault and/or IIS,lim. Figure 2b: Switching an inductive load: The sense signal is not valid during a settling time after turn-on/off and after change of load current. IIN VOUT VON(CL) IL IIS t Infineon Technologies AG 12 of 15 2003-Oct-01 Data sheet BTS 6133 D Figure 3c: Short circuit type two: shut down by short circuit detection, reset by IIN = 0. Figure 3a: Typ. current limitation characteristic [A] I L(SC) IIN 100 IL 80 60 Internal Switch off td(SC2) depending on the external impedance VON 40 1V typ. 20 IIS V ON 0 0 V 10 20 ON(SC) 30 IL [V] In case of VON > VON(SC) (typ. 3.5 V) the device will be switched off by internal short circuit detection. Figure 3b: Short circuit type one: shut down by short circuit detection, reset by IIN = 0. IS,fault t Shut down remains latched until next reset via input. Figure 4a: Overtemperature Reset if Tj<Tjt IIN IL I k ilis IIN VON > VON(SC) IL(SC) IIS I IS,fault td(SC1) tm VOUT Auto Restart IIS I IS,fault tdelay(fault) t Shut down remains latched until next reset via input. Tj t Infineon Technologies AG 13 of 15 2003-Oct-01 Data sheet BTS 6133 D Figure 4b: Overload Tj<Tjt Figure 6a: Current sense versus load current: [mA] I IS I IS,lim 4 IIN IL 3 Vbb -V OUT I L,lim 2 VON=1V typ. RON *I L,lim IS 1 t IL k ilis IIS,lim I IS(LH) 0 0 IL 10 20 30 40 [A] IIS,fault Figure 5a: Undervoltage restart of charge pump, overvoltage clamp Figure 6b: Current sense ratio21: VOUT 15000 VIN = 0 kILIS 10000 V dynamic, short Undervoltage not below ON(CL) 5000 VbIN(u) 0 IIN = 0 0 VbIN(u) VbIN(ucp) 10 5 10 20 I L (MIN) = I IS(LH) ·k ILIS (max@30A) V12 bb 21 Infineon Technologies AG 0 Approximate solution for worst case, minimum detectable load current: VON(CL) 0 [A] IL 14 of 15 This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised by means of calibration the value of kILIS for every single device. 2003-Oct-01 Data sheet BTS 6133 D Package and Ordering Code All dimensions in mm D-Pak-5 Pin: TO-252-5-1 Sales Code BTS6133D Ordering code Q67060-S6072-A101 2.3 +0.05 -0.10 B 5.4 ±0.1 1 ±0.1 0...0.15 0.5 +0.08 -0.04 5x0.6 ±0.1 1.14 4.56 0.9 +0.08 -0.04 0.51 min 0.15 max per side A 0.8 ±0.15 (4.17) 9.9 ±0.5 6.22 -0.2 1 ±0.1 6.5 +0.15 -0.10 0.1 0.25 M A B GPT09161 All metal surfaces tin plated, except area of cut. Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG 15 of 15 2003-Oct-01