NVMFS6B14NL Power MOSFET 100 V, 13 mW, 55 A, Single N−Channel Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6B14NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 13 mW @ 10 V 100 V 55 A 19 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±16 V ID 55 A Parameter Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C 39 PD TC = 100°C TA = 25°C Steady State Operating Junction and Storage Temperature Source Current (Body Diode) S (1,2,3) A 11 PD W 3.8 MARKING DIAGRAM 1.9 IDM 140 A TJ, Tstg −55 to + 175 °C IS 60 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 24 A) EAS 29 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.6 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 January, 2016 − Rev. 1 D 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = 6B14NL (NVMFS6B14NL) or 6B14LW (NVMFS6B14NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 N−CHANNEL MOSFET 8.0 TA = 100°C TA = 25°C, tp = 10 ms G (4) W 94 47 ID TA = 100°C TA = 25°C D (5,6) 1 See detailed ordering, marking and shipping information on page 5 of this data sheet. Publication Order Number: NVMFS6B14NL/D NVMFS6B14NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 80 VGS = 0 V, VDS = 80 V mV/°C TJ = 25°C 25 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 16 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) 1.0 3.0 −5.8 VGS = 10 V VGS = 4.5 V ID = 20 A V mV/°C 10.5 13 15.5 19 mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1680 VGS = 0 V, f = 1 MHz, VDS = 25 V 580 pF 42 VGS = 4.5 V, VDS = 50 V; ID = 25 A 8 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.0 Plateau Voltage VGP 3.3 td(ON) 11 17 2.2 VGS = 10 V, VDS = 50 V; ID = 25 A nC 4.1 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 50 V, ID = 25 A, RG = 1.0 W tf 67.6 ns 14.8 7.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.83 TJ = 125°C 0.72 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.2 V 48 VGS = 0 V, dIS/dt = 100 A/ms, IS = 25 A QRR 25 ns 23 53 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6B14NL TYPICAL CHARACTERISTICS 60 VGS = 10 V to 6 V 4.5 V 4.0 V ID, DRAIN CURRENT (A) VDS = 10 V 3.8 V 50 40 3.6 V 30 3.4 V 20 3.2 V ID, DRAIN CURRENT (A) 60 3.0 V 10 50 40 30 20 TJ = 25°C 10 TJ = 125°C 0 1.0 0.5 2.0 1.5 3.0 2.5 0 4 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 24 ID = 20 A TJ = 25°C 22 20 18 16 14 12 10 8 6 5 4 6 7 8 10 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 5 30 TJ = 25°C 25 20 VGS = 4.5 V 15 VGS = 10 V 10 5 10 20 30 40 60 50 70 80 90 100 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100K 2.4 2.2 3 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 26 3 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 ID = 20 A VGS = 10 V TJ = 150°C 2.0 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = −55°C 0 1.8 1.6 1.4 1.2 1.0 0.8 10K TJ = 125°C 1K TJ = 85°C 100 10 0.6 0.4 −50 −25 1 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6B14NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10,000 C, CAPACITANCE (pF) Ciss 1000 Coss Crss 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 1 0 10 20 30 40 50 60 70 80 5 4 Qgd Qgs 3 TJ = 25°C VDS = 50 V ID = 25 A 2 1 0 2 0 4 6 10 8 12 14 16 18 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge IS, SOURCE CURRENT (A) tr td(on) VDS = 50 V ID = 25 A VGS = 4.5 V 1 1 10 10 1 TJ = 125°C TJ = 25°C TJ = −55°C 0.1 0.01 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 VGS ≤ 10 V Single Pulse TC = 25°C IPEAK, DRAIN CURRENT (A) t, TIME (ns) 6 Qg, TOTAL GATE CHARGE (nC) tf ID, DRAIN CURRENT (A) 7 VDS, DRAIN−TO−SOURCE VOLTAGE (V) td(off) 100 8 100 100 1000 9 100 90 1000 10 10 500 ms 10 1 ms 1 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 25°C 100°C 1 0.01 0.1 10 10 0.0001 100 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (sec) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. TAV www.onsemi.com 4 0.01 NVMFS6B14NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 NVMFS6B14NL, 650 mm2, Cu Single Layer Pad Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFS6B14NLT1G 6B14NL DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS6B14NLWFT1G 614LLW DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NVMFS6B14NLT3G 6B14NL DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS6B14NLWFT3G 614LLW DFN5 (Pb−Free, Wettable Flanks) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS6B14NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 4X E1 q E 2 c 1 2 MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 A1 0.00 −−− 0.05 b 0.33 0.41 0.51 c 0.23 0.28 0.33 5.00 5.30 D 5.15 D1 4.70 4.90 5.10 D2 3.80 4.00 4.20 6.00 6.30 E 6.15 E1 5.70 5.90 6.10 E2 3.45 3.65 3.85 e 1.27 BSC G 0.51 0.575 0.71 K 1.20 1.35 1.50 L 0.51 0.575 0.71 L1 0.125 REF M 3.00 3.40 3.80 q 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 0.20 C 3 A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.495 0.10 b C A B 0.05 c 4.560 2X 8X 1.530 e/2 e L 1 4 3.200 K 4.530 E2 PIN 5 (EXPOSED PAD) L1 1.330 2X M 0.905 1 0.965 G D2 4X BOTTOM VIEW 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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