NTMFS5834NL D

NTMFS5834NL,
NVMFS5834NL
Power MOSFET
40 V, 75 A, 9.3 mW, Single N−Channel
Features
•
•
•
•
•
•
Low RDS(on)
Low Capacitance
Optimized Gate Charge
NVMFS5834NLWF − Wettable Flanks Product
NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V(BR)DSS
RDS(ON) MAX
40 V
75 A
13.6 mW @ 4.5 V
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
14
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 100°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
Steady
State
TA = 100°C
TC = 25°C
TC = 25°C
ID
D
PD
1
W
107
75
276
A
TJ,
TSTG
−55 to
+175
°C
IS
75
A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
EAS
48
mJ
IAS
31
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
MARKING
DIAGRAM
A
75
IDM
Operating Junction and Storage
Temperature
N−CHANNEL MOSFET
W
3.6
63
TC = 100°C
tp = 10 ms
Pulsed Drain
Current
S (1,2,3)
2.5
TC = 100°C
Power Dissipation
RqJC (Note 1)
G (4)
12
PD
ID MAX
9.3 mW @ 10 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
XXXXXX
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Junction−to−Case (Bottom) (Note 1)
RqJC
1.4
Junction−to−Case (Top) (Note 1)
RqJC
4.5
Junction−to−Ambient Steady State (Note 1)
RqJA
41
Junction−to−Ambient Steady State (Note 2)
RqJA
75
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 6
1
Publication Order Number:
NTMFS5834NL/D
NTMFS5834NL, NVMFS5834NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
34.7
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.0
3.0
5.7
VGS = 10 V
ID = 20 A
7.1
9.3
VGS = 4.5 V
ID = 20 A
11.3
13.6
gFS
VDS = 5 V, ID = 20 A
V
mV/°C
29
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1231
VGS = 0 V, f = 1 MHz, VDS = 20 V
198
pF
141
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 20 A
Total Gate Charge
QG(TOT)
12
Threshold Gate Charge
QG(TH)
1.0
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
6.3
Plateau Voltage
VGP
3.4
V
Gate Resistance
RG
0.7
W
td(ON)
10
VGS = 4.5 V, VDS = 20 V; ID = 20 A
24
nC
4.2
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 20 A, RG = 2.5 W
tf
56.4
ns
17.4
6.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.84
TJ = 125°C
0.72
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.2
V
18
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
QRR
10
11
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
ns
8.0
nC
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
150
150
TJ = 25°C
VDS ≥ 10 V
5.0 V
125
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10 V
4.5 V
100
75
4.0 V
50
3.5 V
25
125
100
75
50
TJ = 25°C
25
TJ = 125°C
3.0 V
0
1
2
3
4
5
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.050
ID = 20 A
TJ = 25°C
0.040
0.030
0.020
0.010
0.000
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.020
TJ = 25°C
0.018
0.016
VGS = 4.5 V
0.014
0.012
0.010
VGS = 10 V
0.008
0.006
0.004
5
15
25
35
45
55
65
75
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
2.0
VGS = 0 V
VGS = 10 V
ID = 20 A
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.8
TJ = −55°C
0
1.6
1.4
1.2
1.0
TJ = 150°C
1,000
TJ = 125°C
0.8
0.6
−50
100
−25
0
25
50
75
100
125
150
175
10
20
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
40
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
10
VGS = 0 V
TJ = 25°C
1600
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1800
1400
Ciss
1200
1000
800
600
Coss
400
200
Crss
0
0
10
20
30
40
4
Qgs
Qgd
2
VDS = 20 V
ID = 20 A
TJ = 25°C
0
0
5
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
25
40
IS, SOURCE CURRENT (A)
100
t, TIME (ns)
6
Figure 7. Capacitance Variation
VDD = 32 V
ID = 20 A
VGS = 4.5 V
tr
td(on)
td(off)
10
tf
1
1
10
100
VGS = 0 V
TJ = 25°C
30
20
10
0
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.0
50
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100
10 ms
ID, DRAIN CURRENT (A)
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
10
100 ms
1 ms
10 ms
1
VGS = 10 V
Single Pulse
TC = 25°C
0.1
0.01
QT
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
40
30
20
10
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
175
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
1
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NTMFS5834NLT1G
5834L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5834NLT1G
V5834L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5834NLWFT1G
5834LW
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5834NLT3G
V5834L
DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS5834NLWFT3G
5834LW
DFN5
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
NTMFS5834NL, NVMFS5834NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE K
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
8X
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
1.000
e/2
L
1
4
0.965
K
1.330
2X
0.905
2X
E2
PIN 5
(EXPOSED PAD)
G
SOLDERING FOOTPRINT*
DETAIL A
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
L1
0.495
M
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMFS5834NL/D