BSC018N04LS G OptiMOS™3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS(on),max 1.8 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSC018N04LS G PG-TDSON-8 018N04LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 100 V GS=4.5 V, T C=25 °C 100 V GS=4.5 V, T C=100 °C 100 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) Unit A 30 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse 4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 295 mJ Gate source voltage V GS ±20 V 1) Rev. 1.4 J-STD20 and JESD22 page 1 2009-10-22 BSC018N04LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 125 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 1 Thermal characteristics Thermal resistance, junction - case R thJC bottom top Device on PCB R thJA 6 cm2 cooling area2) K/W 18 - - 50 40 - - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=85 µA 1.2 - 2 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=40 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 2.0 2.5 mΩ V GS=10 V, I D=50 A - 1.5 1.8 - 1.3 - Ω 90 180 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 1.4 page 2 2009-10-22 BSC018N04LS G Parameter Values Symbol Conditions Unit min. typ. max. - 8900 12000 pF - 1800 2400 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=20 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 100 - Turn-on delay time t d(on) - 13 - Rise time tr - 7.4 - Turn-off delay time t d(off) - 55 - Fall time tf - 9.0 - Gate to source charge Q gs - 26 - Gate charge at threshold Q g(th) - 14 - Gate to drain charge Q gd - 11 - Switching charge Q sw - 23 - Gate charge total Qg - 113 150 Gate plateau voltage V plateau - 2.9 - Gate charge total Qg V DD=20 V, I D=30 A, V GS=0 to 4.5 V - 54 72 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 106 - Output charge Q oss V DD=20 V, V GS=0 V - 69 - - - 100 - - 400 V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 Ω ns Gate Charge Characteristics 5) V DD=20 V, I D=30 A, V GS=0 to 10 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.81 1.2 Reverse recovery charge Q rr V R=20 V, I F=I S, di F/dt =400 A/µs - 125 - 5) Rev. 1.4 T C=25 °C A V nC See figure 16 for gate charge parameter definition page 3 2009-10-22 BSC018N04LS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 140 120 120 100 100 80 I D [A] P tot [W] 80 60 60 40 40 20 20 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 160 T C [°C] 10 limited by on-state resistance 1 µs 10 µs 102 100 µs 1 Z thJC [K/W] I D [A] DC 1 ms 10 1 10 ms 0.5 0.2 0.1 0.1 100 0.05 0.02 0.01 10-1 10 -1 10 0 10 1 10 2 single pulse 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.4 0.01 page 4 2009-10-22 BSC018N04LS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 600 4 4.5 V 5V 500 3.5 V 3 10 V R DS(on) [mΩ] I D [A] 400 4V 300 4V 4.5 V 2 5V 10 V 200 3.5 V 100 1 3.2 V 3V 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 300 350 250 300 200 g fs [S] I D [A] 250 200 150 150 100 100 50 25 °C 150 °C 50 0 0 0 1 2 3 4 5 Rev. 1.4 0 40 80 120 160 I D [A] V GS [V] page 5 2009-10-22 BSC018N04LS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=85 µA 3 2.5 2.5 2 98 % 1.5 V GS(th) [V] R DS(on) [mΩ] 2 typ 1.5 1 1 0.5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 1000 25 °C 104 150 °C, 98% Ciss 100 150 °C I F [A] C [pF] Coss 103 25 °C, 98% 10 Crss 102 101 1 0 10 20 30 40 Rev. 1.4 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2009-10-22 BSC018N04LS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 20 V 10 25 °C 8V 100 °C 32 V 8 V GS [V] I AV [A] 125 °C 10 6 4 2 1 0 1 10 100 1000 0 40 80 120 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 45 V GS Qg V BR(DSS) [V] 40 35 V g s(th) 30 25 Q g(th) Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.4 page 7 2009-10-22 BSC018N04LS G Package Outline PG-TDSON-8 PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.4 page 8 2009-10-22 BSC018N04LS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.4 page 9 2009-10-22 BSC018N04LS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.4 page 10 2009-10-22