BSC014N03LS G OptiMOS™3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications V DS 30 V R DS(on),max 1.4 mΩ ID 100 A PG-TDSON-8 • N-channel • Logic level; • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant; • Halogen-free according to IEC61249-2-21 Type Package Marking BSC014N03LS G PG-TDSON-8 014N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 100 V GS=4.5 V, T C=25 °C 100 V GS=4.5 V, T C=100 °C 100 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) Unit A 34 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse 4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 290 mJ Gate source voltage V GS ±20 V 1) Rev. 1.3 J-STD20 and JESD22 page 1 2009-10-22 BSC014N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 139 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - - 0.9 top - - 20 6 cm2 cooling area2) - - 50 30 - - Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 1.7 2.1 mΩ V GS=10 V, I D=30 A - 1.2 1.4 0.7 1.5 2.6 Ω 65 130 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 1.3 See figure 3 for more detailed information page 2 2009-10-22 BSC014N03LS G Parameter Values Symbol Conditions Unit min. typ. max. - 7600 10000 pF - 2600 3500 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 160 - Turn-on delay time t d(on) - 13 - Rise time tr - 8.6 - Turn-off delay time t d(off) - 51 - Fall time tf - 8.6 - Gate to source charge Q gs - 21 - Gate charge at threshold Q g(th) - 12 - Gate to drain charge Q gd - 10 - Switching charge Q sw - 19 - Gate charge total Qg - 47 63 Gate plateau voltage V plateau - 2.8 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 98 131 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 41 - Output charge Q oss V DD=15 V, V GS=0 V - 67 - - - 100 - - 400 V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω ns Gate Charge Characteristics 5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.78 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 30 nC 4) 5) Rev. 1.3 T C=25 °C A See figure 13 for more detailed information See figure 16 for gate charge parameter definition page 3 2009-10-22 BSC014N03LS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 120 160 140 100 120 80 I D [A] P tot [W] 100 80 60 60 40 40 20 20 0 0 0 40 80 120 160 0 40 80 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 160 T C [°C] T C [°C] 100 limited by on-state resistance 1 µs 0.5 10 µs 102 0.2 100 µs DC 10-1 0.05 Z thJC [K/W] I D [A] 1 ms 101 10 ms 0.1 0.02 0.01 10-2 single pulse 100 10-3 10-1 10 -1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.3 10-6 page 4 2009-10-22 BSC014N03LS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 5 4V 3V 4.5 V 350 4 5V 300 10 V 3.2 V R DS(on) [mΩ] I D [A] 250 3.5 V 200 150 3 3.5 V 2 4V 4.5 V 5V 3.2 V 100 10 V 1 11.5 V 3V 50 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 300 250 320 200 I D [A] g fs [S] 240 150 160 100 80 50 25 °C 150 °C 0 0 0 1 2 3 4 5 Rev. 1.3 0 40 80 120 160 I D [A] V GS [V] page 5 2009-10-22 BSC014N03LS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 3 2.5 2.5 2 1.5 1.5 V GS(th) [V] R DS(on) [mΩ] 2 98 % 1 typ 1 0.5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 Ciss 25 °C 150 °C, 98% Coss 100 1000 150 °C I F [A] C [pF] 103 25 °C, 98% Crss 102 100 101 10 0 10 1 5 10 15 20 25 30 Rev. 1.3 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2009-10-22 BSC014N03LS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 6V 10 25 °C 24 V 100 °C 125 °C V GS [V] I AV [A] 8 10 6 4 2 1 0 1 10 100 1000 0 40 80 120 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.3 page 7 2009-10-22 BSC014N03LS G Package Outline PG-TDSON-8 PG-TDSON-8: Outline Rev. 1.3 page 8 2009-10-22 BSC014N03LS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.3 page 9 2009-10-22 BSC014N03LS G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 10 2009-10-22