SA58670 2.1 W/channel stereo class-D audio amplifier Rev. 03 — 11 June 2009 Product data sheet 1. General description The SA58670 is a stereo, filter-free class-D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP). The SA58670 features independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and small package makes it an ideal choice for both cellular handsets and PDAs. The SA58670 delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 Ω. It delivers 2.1 W/channel at 5.0 V into 4 Ω. The maximum power efficiency is excellent at 70 % to 74 % into 4 Ω and 84 % to 88 % into 8 Ω. The SA58670 provides thermal and short-circuit shutdown protection. 2. Features n Output power: u 2.1 W/channel into 4 Ω at 5.0 V u 1.4 W/channel into 8 Ω at 5.0 V u 720 mW/channel into 8 Ω at 3.6 V n Supply voltage: 2.5 V to 5.5 V n Independent shutdown control for each channel n Selectable gain: 6 dB, 12 dB, 18 dB and 24 dB n High SVRR: −77 dB at 217 Hz n Fast start-up time: 3.5 ms n Low supply current n Low shutdown current n Short-circuit and thermal protection n Space savings with 4 mm × 4 mm HVQFN20 package n Low junction to ambient thermal resistance of 24 K/W with exposed DAP 3. Applications n n n n n Wireless and cellular handset and PDA Portable DVD player USB speaker Notebook PC Portable radio and gaming SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier n Educational toy 4. Ordering information Table 1. Ordering information Type number SA58670BS Package Name Description Version HVQFN20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 × 4 × 0.85 mm SOT917-1 5. Block diagram 3, 13 PVDD SA58670 right input INRP INRN n.c. left input INLP INLN G0 G1 SDR 16 17 14 OUTRP GAIN ADJUST 6, 10 20 19 PWM HBRIDGE INTERNAL OSCILLATOR 11 OUTRN GND 2 OUTLP GAIN ADJUST PWM HBRIDGE 15 1 8 5 OUTLN 9 AVDD 300 kΩ SDL VDD BIAS CIRCUITRY VDD SHORT-CIRCUIT PROTECTION 7 4, 12 300 kΩ 18 PGND AGND 001aah482 Refer to Table 6 for gain selection. Fig 1. Block diagram SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 2 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 6. Pinning information 5 17 INRN 16 INRP 13 PVDD 12 PGND DAP(1) n.c. 11 OUTRN n.c. 10 4 AVDD PGND OUTLN 14 OUTRP SA58670BS 9 3 8 2 PVDD 7 OUTLP 15 G0 SDL 1 6 G1 SDR terminal 1 index area 18 AGND 20 INLP 19 INLN 6.1 Pinning 001aah483 Transparent top view (1) Exposed Die Attach Paddle (DAP). Fig 2. Pin configuration for HVQFN20 6.2 Pin description Table 2. Pin description Symbol Pin Description G1 1 gain select input 1 OUTLP 2 left channel positive output PVDD 3 power supply voltage (level same as AVDD) PGND 4 power ground OUTLN 5 left channel negative output n.c. 6 not connected SDL 7 left channel shutdown input (active LOW) SDR 8 right channel shutdown input (active LOW) AVDD 9 analog supply voltage (level same as PVDD) n.c. 10 not connected OUTRN 11 right channel negative output PGND 12 power ground PVDD 13 power supply voltage (level same as AVDD) OUTRP 14 right channel positive output G0 15 gain select input 0 INRP 16 right channel positive input INRN 17 right channel negative input AGND 18 analog ground SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 3 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier Table 2. Pin description …continued Symbol Pin Description INLN 19 left channel negative input INLP 20 left channel positive input - (DAP) exposed die attach paddle; connect to ground plane heat spreader 7. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).[1] Symbol Parameter Conditions Min Max Unit VDD supply voltage Active mode −0.3 +6.0 V Shutdown mode −0.3 +7.0 V input voltage VI P power dissipation pin SDL GND VDD V pin SDR GND VDD V other pins −0.3 VDD + 0.3 V Tamb = 25 °C - 5.2 W Tamb = 75 °C - 3.12 W Tamb = 85 °C - 2.7 W derating factor 41.6 mW/K Tamb ambient temperature operating in free air −40 +85 °C Tj junction temperature operating −40 +150 °C Tstg storage temperature −65 +85 °C VESD electrostatic discharge voltage human body model ±2000 - V machine model ±200 - V [1] VDD is the supply voltage on pins PVDD and pin AVDD. GND is the voltage ground on pins PGND and pin AGND. SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 4 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 8. Static characteristics Table 4. Static characteristics Tamb = 25 °C; unless otherwise specified[1]. Symbol Parameter Conditions Min Typ Max Unit VDD supply voltage operating 2.5 - 5.5 V IDD supply current VDD = 2.5 V; no load - 4 6 mA VDD = 3.6 V; no load - 5 7.5 mA VDD = 5.5 V; no load - 6 9 mA IDD(sd) shutdown mode supply current no input signal; VSDR = VSDL = GND - 10 1000 nA PSRR power supply rejection ratio VDD = 2.5 V to 5.5 V - −75 −55 dB Vi(cm) common-mode input voltage 0.5 - VDD − 0.8 V CMRR common mode rejection ratio inputs are shorted together; VDD = 2.5 V to 5.5 V - −69 −50 dB VIH HIGH-level input voltage VDD = 2.5 V to 5.5 V; pins SDL, SDR, G0, G1 0.7 × VDD - VDD V VIL LOW-level input voltage VDD = 2.5 V to 5.5 V; pins SDL, SDR, G0, G1 0 - 0.3 × VDD V IIH HIGH-level input current VDD = 5.5 V; VI = VDD - - 50 µA IIL LOW-level input current VDD = 5.5 V; VI = 0 V - - 5 µA fsw switching frequency VDD = 2.5 V to 5.5 V 250 300 350 kHz Gv(cl) closed-loop voltage gain VG0 = VG1 = 0.35 V 5.5 6 6.5 dB VG0 = VDD; VG1 = 0.35 V 11.5 12 12.5 dB VG0 = 0.35 V; VG1 = VDD 17.5 18 18.5 dB VG0 = VG1 = VDD 23.5 24 24.5 dB VDD = 2.5 V - 700 - mΩ VDD = 3.6 V - 570 - mΩ VDD = 5.5 V - 500 - mΩ Pins OUTLP, OUTLN, OUTRP and OUTRN RDSon drain-source on-state resistance |VO(offset)| output offset voltage measured differentially; inputs AC grounded; Gv(cl) = 6 dB; VDD = 2.5 V to 5.5 V - 5 10 mV Zo(sd) shutdown mode output impedance VSDR = VSDL = 0.35 V - 2 - kΩ [1] VDD is the supply voltage on pins PVDD and pin AVDD. GND is the ground supply voltage on pins PGND and pin AGND. SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 5 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 9. Dynamic characteristics Table 5. Dynamic characteristics Tamb = 25 °C; RL = 8 Ω; unless otherwise specified[1]. Symbol Parameter Conditions Po output power per channel; f = 1 kHz; THD+N = 10 % THD+N SVRR total harmonic distortion-plus-noise supply voltage ripple rejection Min Typ Max Unit RL = 8 Ω; VDD = 3.6 V - 0.72 - W RL = 8 Ω; VDD = 5.0 V - 1.4 - W RL = 4 Ω; VDD = 5.0 V - 2.1 - W Po = 0.5 W - 0.11 - % Po = 1.0 W - 0.14 - % - −73 - dB VDD = 5.0 V; Gv(cl) = 6 dB; f = 1 kHz Gv(cl) = 6 dB; f = 217 Hz VDD = 3.6 V - −77 - dB CMRR common mode rejection VDD = 5.0 V; Gv(cl) = 6 dB; f = 217 Hz ratio - −69 - dB Zi input impedance Gv(cl) = 6 dB - 28.1 - kΩ Gv(cl) = 12 dB - 17.3 - kΩ Gv(cl) = 18 dB - 9.8 - kΩ Gv(cl) = 24 dB - 5.2 - kΩ - 3.5 - ms no weighting - 35 - µV A weighting - 27 - µV VDD = 5.0 V td(sd-startup) delay time from shutdown to start-up VDD = 3.6 V Vn(o) output noise voltage VDD = 3.6 V; f = 20 Hz to 20 kHz; inputs are AC grounded [1] VDD is the supply voltage on pins PVDD and pin AVDD. SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 6 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 10. Typical performance curves 001aah484 102 THD+N (%) 10 (1) (2) (3) 1 10−1 10−2 10−5 10−4 10−3 10−2 10−1 1 10 Po (W) a. Gv(cl) = 24 dB 001aah485 102 THD+N (%) 10 (1) (2) (3) 1 10−1 10−2 10−5 10−4 10−3 10−2 10−1 1 10 Po (W) b. Gv(cl) = 6 dB. fi = 1 kHz. (1) VDD = 2.5 V. (2) VDD = 3.6 V. (3) VDD = 5.0 V. Fig 3. Total harmonic distortion-plus-noise as a function of output power; RL = 8 Ω SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 7 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 001aah486 102 THD+N (%) 10 (1) (2) (3) 1 10−1 10−2 10−5 10−4 10−3 10−2 10−1 1 10 Po (W) a. Gv(cl) = 24 dB. 001aah487 102 THD+N (%) 10 (1) (2) (3) 1 10−1 10−2 10−5 10−4 10−3 10−2 10−1 1 10 Po (W) b. Gv(cl) = 6 dB. fi = 1 kHz. (1) VDD = 2.5 V. (2) VDD = 3.6 V. (3) VDD = 5.0 V. Fig 4. Total harmonic distortion-plus-noise as a function of output power; RL = 4 Ω SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 8 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 001aah488 1 THD+N (%) 10−1 (1) (2) (3) 10−2 10−3 10 102 103 104 105 f (Hz) (1) Po = 350 mW; Vi = 590 mV (RMS). (2) Po = 240 mW; Vi = 490 mV (RMS). (3) Po = 120 mW; Vi = 346 mV (RMS). a. RL = 4 Ω 001aah489 1 THD+N (%) (1) 10−1 (2) (3) 10−2 10−3 10 102 103 104 105 f (Hz) (1) Po = 260 mW; Vi = 721.1 mV (RMS). (2) Po = 180 mW; Vi = 600 mV (RMS). (3) Po = 90 mW; Vi = 424.3 mV (RMS). b. RL = 8 Ω Gv(cl) = 6 dB. Fig 5. Total harmonic distortion-plus-noise as a function of frequency; VDD = 2.5 V SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 9 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 001aah490 1 THD+N (%) (1) 10−1 (3) (2) 10−2 10−3 10 102 103 104 105 f (Hz) (1) Po = 825 mW; Vi = 908.3 mV (RMS). (2) Po = 550 mW; Vi = 741.6 mV (RMS). (3) Po = 275 mW; Vi = 524.4 mV (RMS). a. RL = 4 Ω 001aah491 1 THD+N (%) (1) 10−1 (2) (3) 10−2 10−3 10 102 103 104 105 f (Hz) (1) Po = 560 mW; Vi = 1.058 V (RMS). (2) Po = 375 mW; Vi = 866 mV (RMS). (3) Po = 190 mW; Vi = 616.4 mV (RMS). b. RL = 8 Ω Gv(cl) = 6 dB. Fig 6. Total harmonic distortion-plus-noise as a function of frequency; VDD = 3.6 V SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 10 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 001aah492 1 THD+N (%) 10−1 (1) 10−2 (2) (3) 10−3 10 102 103 104 105 f (Hz) (1) Po = 1.65 W; Vi = 1.285 V (RMS). (2) Po = 1.1 W; Vi = 1.05 V (RMS). (3) Po = 550 mW; Vi = 741.6 mV (RMS). a. RL = 4 Ω 001aah493 10 THD+N (%) (1) 1 10−1 (2) (3) 10−2 10−3 10 102 103 104 105 f (Hz) (1) Po = 1.16 W; Vi = 1.523 V (RMS). (2) Po = 775 mW; Vi = 1.245 V (RMS). (3) Po = 380 mW; Vi = 871.8 mV (RMS). b. RL = 8 Ω Gv(cl) = 6 dB. Fig 7. Total harmonic distortion-plus-noise as a function of frequency; VDD = 5.0 V SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 11 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 001aah495 −60 αct (dB) −80 (1) (2) −100 (3) (4) −120 103 104 105 f (Hz) (1) VDD = 3.6 V; L channel to R channel. (2) VDD = 3.6 V; R channel to L channel. (3) VDD = 5.0 V; L channel to R channel. (4) VDD = 5.0 V; R channel to L channel. Fig 8. Crosstalk (stepped all-to-one) as a function of frequency 001aah497 10−3 Vn(o) (V) 10−4 (1) (2) 10−5 10−6 10 102 103 104 f (Hz) (1) Left channel. (2) Right channel. Fig 9. Noise output voltage (RMS value) as a function of frequency SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 12 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 001aah505 −60 αct (dB) −80 (1) (2) (3) −100 −120 2 4 6 8 10 12 14 16 20 18 f (kHz) a. RL = 4 Ω 001aah506 −60 αct (dB) −80 (1) (2) −100 (3) −120 2 4 6 8 10 12 14 16 20 18 f (kHz) b. RL = 8 Ω (1) VDD = 2.5 V. (2) VDD = 3.6 V. (3) VDD = 5.0 V. Fig 10. Crosstalk (one-to-one) as a function of frequency SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 13 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 001aah507 6 VDD (V) 001aah508 5.5 (1) (2) IDD (mA) 5V 4 (3) 4.5 3.6 V 2.5 V 2 3.5 0 0 1 2 3 2.5 2.5 3.5 4.5 VSDR; VSDL (V) 5.5 VDD (V) (1) left channel; RL = 8 Ω. (2) right channel; RL = 4 Ω. (3) right channel; RL = 8 Ω. Fig 11. Supply voltage as a function of shutdown voltage 001aah509 1600 Fig 12. Supply current as a function of supply voltage 001aah510 800 IDD (mA) IDD (mA) 1200 600 800 400 (1) (1) (2) (2) (3) (3) 200 400 0 0 0 0.4 0.8 1.2 1.6 2.0 0 Po (W) 0.4 0.8 1.2 1.6 Po (W) a. RL = 4 Ω b. RL = 8 Ω (1) VDD = 2.5 V. (2) VDD = 3.6 V. (3) VDD = 5.0 V. Fig 13. Supply current as a function of output power SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 14 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 001aah511 0.8 (1) P (W) 001aah512 0.4 P (W) (1) 0.3 0.6 (2) 0.2 0.4 (2) (3) 0.1 0.2 (3) 0 0 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 Po (W) 1.6 Po (W) a. RL = 4 Ω b. RL = 8 Ω (1) VDD = 5.0 V. (2) VDD = 3.6 V. (3) VDD = 2.5 V. Fig 14. Power dissipation as a function of output power 001aah513 100 001aah514 100 ηpo ηpo 80 (3) (2) (3) 60 (1) 80 (1) (2) 60 40 40 20 20 0 0 0 0.4 0.8 1.2 1.6 2.0 0 Po (W) 0.4 0.8 1.2 1.6 Po (W) a. RL = 4 Ω b. RL = 8 Ω (1) VDD = 5.0 V. (2) VDD = 3.6 V. (3) VDD = 2.5 V. Fig 15. Output power efficiency as a function of output power SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 15 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 11. Application information differential inputs left channel 1 µF differential inputs right channel 1 µF 1 µF 1 µF VDD VDD INLP INLN G1 AGND INRN INRP G0 FB FB OUTLP OUTRP 1 nF 1 nF FB FB SA58670 OUTLN OUTRN 1 nF 1 nF VDD PVDD 10 µF VDD PVDD 1 µF 1 µF PGND 10 µF PGND SDL SDR AVDD VDD 1 µF 10 µF 001aah515 Fig 16. SA58670 application schematic 11.1 Power supply decoupling considerations The SA58670 is a stereo class-D audio amplifier that requires proper supply voltage decoupling to ensure the rated performance for THD+N and power efficiency. To decouple high frequency transients, supply voltage spikes and digital noise on the supply voltage bus line, a low Equivalent Series Resistance (ESR) capacitor of typically 1 µF is placed as close as possible to the PVDD pins of the SA58670. It is important to place the decoupling capacitor at the supply voltage pins of the SA58670 because any resistance or inductance in the PCB trace between the SA58670 and the capacitor can cause a loss in efficiency. Additional decoupling using a larger capacitor, 4.7 µF or greater, may be done on the supply voltage connection on the PCB to filter low frequency signals. Usually this is not required due to high PSRR of the SA58670. 11.2 Input capacitor selection The SA58670 does not require input coupling capacitors when used with a differential audio source that is biased from 0.5 V to VDD − 0.8 V. In other words, the input signal must be biased within the common-mode input voltage (Vi(cm)) range. If high-pass filtering is required or if it is driven using a single-ended source, input coupling capacitors are required. The 3 dB cut-off frequency created by the input coupling capacitor and the input resistors (see Table 6) is calculated by Equation 1: 1 f –3dB = -----------------------------2π × R i × C i (1) SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 16 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier Table 6. Gain selection G1 G0 Gain (V/V) Gain (dB) Input impedance (kΩ) LOW LOW 2 6 28.1 LOW HIGH 4 12 17.3 HIGH LOW 8 18 9.8 HIGH HIGH 16 24 5.2 Since the value of the input decoupling capacitor and the input resistance determined by the gain setting affects the low frequency performance of the audio amplifier, it is important to consider this during the system design. Small speakers in wireless and cellular phones usually do not respond well to low frequency signals, so the 3 dB cut-off frequency may be increased to block the low frequency signals to the speakers. Not using input coupling capacitors may increase the output offset voltage. Equation 2 is solved for Ci: 1 C i = -------------------------------------2π × R i × f –3dB (2) 11.3 PCB layout considerations Component location is very important for performance of the SA58670. Place all external components very close to the SA58670. Placing decoupling capacitors directly at the power supply voltage pins increases efficiency because the resistance and inductance in the trace between the SA58670 power supply voltage pins and the decoupling capacitor causes a loss in power efficiency. The trace width and routing are also very important for power output and noise considerations. For high current pins (PVDD, PGND and audio output), the trace widths should be maximized to ensure proper performance and output power. Use at least 500 µm wide traces. For the input pins (INRP, INRN, INLP and INLN), the traces must be symmetrical and run side-by-side to maximize common-mode cancellation. 11.4 Filter-free operation and ferrite bead filters A ferrite bead low-pass filter can be used to reduce radio frequency emissions in applications that have circuits sensitive to frequencies greater than 1 MHz. A ferrite bead low-pass filter functions well for amplifiers that must pass FCC unintentional radiation requirements for frequencies greater than 30 MHz. Choose a bead with high-impedance at high frequencies and very low-impedance at low frequencies. In order to prevent distortion of the output signal, select a ferrite bead with adequate current rating. For applications in which there are circuits that are EMI sensitive to low frequencies (< 1 MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC output filter. SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 17 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 11.5 Efficiency and thermal considerations The maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the PCB layout. In Table 3 “Limiting values”, the power derating factor is given as 41.6 mW/K. The device thermal resistance, Rth(j-a) is the reciprocal of the power derating factor. Convert the power derating factor to Rth(j-a) by Equation 3: 1 1 R th ( j-a ) = ------------------------------------------ = ---------------- = 24 K /W derating factor 0.0416 (3) For a maximum allowable junction temperature Tj = 150 °C and Rth(j-a) = 24 K/W and a maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel output power, 4 Ω load, 5 V supply, the maximum ambient temperature is calculated using Equation 4: T amb ( max ) = T j ( max ) – ( R th ( j-a ) × P max ) = 150 – ( 24 × 1.5 ) = 114 °C (4) The maximum ambient temperature is 114 °C at maximum power dissipation for 5 V supply and 4 Ω load. If the junction temperature of the SA58670 rises above 150 °C, the thermal protection circuitry turns the SA58670 off; this prevents damage to IC. Using speakers greater than 4 Ω further enhances thermal performance and battery lifetime by reducing the output load current and increasing amplifier efficiency. 11.6 Additional thermal information The SA58670 HVQFN20 package incorporates an exposed DAP that is designed to solder the mount directly to the PCB heat spreader. By the use of thermal vias, the DAP may be soldered directly to a ground plane or special heat sinking layer designed into the PCB. The thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lowest package thermal resistance. SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 18 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 12. Package outline HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm B D SOT917-1 A terminal 1 index area A E A1 c detail X C e1 e b 6 10 y y1 C v M C A B w M C L 11 5 e Eh e2 1 15 terminal 1 index area 20 16 Dh X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. A1 b 1 0.05 0.00 0.30 0.18 c D(1) Dh E(1) Eh 0.2 4.1 3.9 2.45 2.15 4.1 3.9 2.45 2.15 e e1 2 0.5 e2 L v w y y1 2 0.6 0.4 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT917 -1 --- MO-220 --- EUROPEAN PROJECTION ISSUE DATE 05-10-08 05-10-31 Fig 17. Package outline SOT917-1 (HVQFN20) SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 19 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 13. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 13.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 13.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 13.3 Wave soldering Key characteristics in wave soldering are: • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 20 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 13.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 18) than a SnPb process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 7 and 8 Table 7. SnPb eutectic process (from J-STD-020C) Package thickness (mm) Package reflow temperature (°C) Volume (mm3) < 350 ≥ 350 < 2.5 235 220 ≥ 2.5 220 220 Table 8. Lead-free process (from J-STD-020C) Package thickness (mm) Package reflow temperature (°C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 18. SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 21 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 18. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 14. Abbreviations Table 9. Abbreviations Acronym Description DAP Die Attach Paddle DVD Digital Video Disc EMI ElectroMagnetic Interference ESR Equivalent Series Resistance LC inductor-capacitor filter PC Personal Computer PCB Printed-Circuit Board PDA Personal Digital Assistant PWM Pulse Width Modulator USB Universal Serial Bus SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 22 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 15. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes SA58670_3 20090611 Product data sheet - SA58670_2 Modifications: • Table 4 “Static characteristics”: – Changed VIH Min value from “1.3 V” to “0.7 × VDD V” – Changed VIL Max value from “0.35 V” to “0.3 × VDD V” SA58670_2 20081023 Product data sheet - SA58670_1 SA58670_1 20080104 Product data sheet - - SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 23 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] SA58670_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 June 2009 24 of 25 SA58670 NXP Semiconductors 2.1 W/channel stereo class-D audio amplifier 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 11.1 11.2 11.3 11.4 11.5 11.6 12 13 13.1 13.2 13.3 13.4 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Typical performance curves . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . 16 Power supply decoupling considerations . . . . 16 Input capacitor selection . . . . . . . . . . . . . . . . . 16 PCB layout considerations . . . . . . . . . . . . . . . 17 Filter-free operation and ferrite bead filters. . . 17 Efficiency and thermal considerations . . . . . . 18 Additional thermal information . . . . . . . . . . . . 18 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 Soldering of SMD packages . . . . . . . . . . . . . . 20 Introduction to soldering . . . . . . . . . . . . . . . . . 20 Wave and reflow soldering . . . . . . . . . . . . . . . 20 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 20 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 21 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 23 Legal information. . . . . . . . . . . . . . . . . . . . . . . 24 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 24 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Contact information. . . . . . . . . . . . . . . . . . . . . 24 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 June 2009 Document identifier: SA58670_3