MX25L25735F, 3V, 256Mb, v1.2

MX25L25735F
MX25L25735F
DATASHEET
P/N: PM1799
MX25L25735F
Contents
1. FEATURES............................................................................................................................................................... 4
2. GENERAL DESCRIPTION...................................................................................................................................... 6
Table 1. Read performance Comparison.....................................................................................................6
3. PIN CONFIGURATIONS .......................................................................................................................................... 7
4. PIN DESCRIPTION................................................................................................................................................... 7
5. BLOCK DIAGRAM.................................................................................................................................................... 8
6. DATA PROTECTION................................................................................................................................................. 9
Table 2. Protected Area Sizes....................................................................................................................10
Table 3. 4K-bit Secured OTP Definition..................................................................................................... 11
7. Memory Organization............................................................................................................................................ 12
Table 4. Memory Organization...................................................................................................................12
8. DEVICE OPERATION............................................................................................................................................. 13
8-1. 256Mb Address Protocol........................................................................................................................... 15
8-2. Quad Peripheral Interface (QPI) Read Mode........................................................................................... 15
9. HOLD FEATURES.................................................................................................................................................. 16
10. COMMAND DESCRIPTION.................................................................................................................................. 17
Table 5. Command Set...............................................................................................................................17
10-1. Write Enable (WREN)............................................................................................................................... 21
10-2. Write Disable (WRDI)................................................................................................................................ 22
10-3. Read Identification (RDID)........................................................................................................................ 23
10-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................ 24
10-5. Read Electronic Manufacturer ID & Device ID (REMS)............................................................................ 26
10-6. QPI ID Read (QPIID)................................................................................................................................ 27
Table 6. ID Definitions ...............................................................................................................................27
10-7. Read Status Register (RDSR).................................................................................................................. 28
10-8. Read Configuration Register (RDCR)....................................................................................................... 29
10-9. Write Status Register (WRSR).................................................................................................................. 35
Table 7. Protection Modes..........................................................................................................................36
10-10.Read Data Bytes (READ)......................................................................................................................... 39
10-11. Read Data Bytes at Higher Speed (FAST_READ)................................................................................... 40
10-12.Dual Output Read Mode (DREAD)........................................................................................................... 41
10-13.2 x I/O Read Mode (2READ).................................................................................................................... 42
10-14.Quad Read Mode (QREAD)..................................................................................................................... 43
10-15.4 x I/O Read Mode (4READ).................................................................................................................... 44
10-16.Burst Read................................................................................................................................................ 46
10-17.Performance Enhance Mode.................................................................................................................... 47
10-18.Performance Enhance Mode Reset.......................................................................................................... 50
10-19.Sector Erase (SE)..................................................................................................................................... 51
10-20.Block Erase (BE32K)................................................................................................................................ 52
10-21.Block Erase (BE)...................................................................................................................................... 53
10-22.Chip Erase (CE)........................................................................................................................................ 54
10-23.Page Program (PP).................................................................................................................................. 55
P/N: PM1799
2
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-24.4 x I/O Page Program (4PP)..................................................................................................................... 57
10-25.Deep Power-down (DP)............................................................................................................................ 58
10-26.Enter Secured OTP (ENSO)..................................................................................................................... 59
10-27.Exit Secured OTP (EXSO)........................................................................................................................ 59
10-28.Read Security Register (RDSCUR).......................................................................................................... 59
10-29.Write Security Register (WRSCUR).......................................................................................................... 59
Table 8. Security Register Definition..........................................................................................................60
10-30.Write Protection Selection (WPSEL)......................................................................................................... 61
10-31.Advanced Sector Protection..................................................................................................................... 63
10-31-1. Lock Register............................................................................................................................... 64
10-31-2.SPB Lock Bit (SPBLB).................................................................................................................. 65
10-31-3.Solid Protection Bits..................................................................................................................... 66
10-31-4.Dynamic Write Protection Bits...................................................................................................... 68
10-31-5.Temporary Un-protect Solid write protect bit (USPB) .................................................................. 69
10-31-6.Gang Block Lock/Unlock (GBLK/GBULK).................................................................................... 69
10-31-7.Sector Protection States Summary Table..................................................................................... 69
10-31-8.Password Protection Mode........................................................................................................... 70
10-32.Program/Erase Suspend/Resume............................................................................................................ 71
10-33.Erase Suspend......................................................................................................................................... 71
10-34.Program Suspend..................................................................................................................................... 71
10-35.Write-Resume........................................................................................................................................... 73
10-36.No Operation (NOP)................................................................................................................................. 73
10-37.Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 73
10-38.Read SFDP Mode (RDSFDP)................................................................................................................... 75
Table 9. Signature and Parameter Identification Data Values ...................................................................76
Table 10. Parameter Table (0): JEDEC Flash Parameter Tables...............................................................77
Table 11. Parameter Table (1): Macronix Flash Parameter Tables.............................................................79
11. POWER-ON STATE.............................................................................................................................................. 81
12. ELECTRICAL SPECIFICATIONS......................................................................................................................... 82
Table 12. ABSOLUTE MAXIMUM RATINGS.............................................................................................82
Table 13. CAPACITANCE TA = 25°C, f = 1.0 MHz.....................................................................................82
Table 14. DC CHARACTERISTICS...........................................................................................................84
Table 15. AC CHARACTERISTICS ...........................................................................................................85
13. OPERATING CONDITIONS.................................................................................................................................. 87
Table 16. Power-Up/Down Voltage and Timing .........................................................................................89
13-1. INITIAL DELIVERY STATE....................................................................................................................... 89
14. ERASE AND PROGRAMMING PERFORMANCE............................................................................................... 90
15. DATA RETENTION............................................................................................................................................... 90
16. LATCH-UP CHARACTERISTICS......................................................................................................................... 90
17. ORDERING INFORMATION................................................................................................................................. 91
18. PART NAME DESCRIPTION................................................................................................................................ 92
19. PACKAGE INFORMATION................................................................................................................................... 93
20. REVISION HISTORY ............................................................................................................................................ 95
P/N: PM1799
3
REV. 1.2, OCT. 31, 2013
MX25L25735F
3V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O)
FLASH MEMORY
1. FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• 256Mb: 268,435,456 x 1 bit structure or 134,217,728 x 2 bits (two I/O mode) structure or 67,108,864 x 4 bits (four
I/O mode) structure
• Protocol Support
- Single I/O, Dual I/O and Quad I/O
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is from 2.3V to 2.5V
• Fast read for SPI mode
- Support clock frequency up to 133MHz for all protocols
- Support Fast Read, 2READ, DREAD, 4READ, QREAD instructions.
- Configurable dummy cycle number for fast read operation
• Quad Peripheral Interface (QPI) available
• Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each
- Any Block can be erased individually
• Programming :
- 256byte page buffer
- Quad Input/Output page program(4PP) to enhance program performance
• Typical 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 and T/B status bits define the size of the area to be protected against program and erase
instructions
- Advanced sector protection function (Solid and Password Protect)
• Additional 4K bit security OTP
- Features unique identifier
- factory locked identifiable, and customer lockable
• Command Reset
• Program/Erase Suspend and Resume operation
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and 1-byte device ID
• Support Serial Flash Discoverable Parameters (SFDP) mode
HARDWARE FEATURES
• SCLK Input
- Serial clock input
P/N: PM1799
4
REV. 1.2, OCT. 31, 2013
MX25L25735F
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
• HOLD#/SIO3
- Hardware HOLD# pin or Serial input & Output for 4 x I/O read mode
• PACKAGE
-16-pin SOP (300mil)
-8-land WSON (8x6mm)
- All devices are RoHS Compliant and Halogen-free
P/N: PM1799
5
REV. 1.2, OCT. 31, 2013
MX25L25735F
2. GENERAL DESCRIPTION
MX25L25735F is 256Mb bits serial Flash memory with 4-bytes address interface, which is configured as 33,554,432
x 8 internally. When it is in two or four I/O mode, the structure becomes 134,217,728 bits x 2 or 67,108,864 bits x 4.
MX25L25735F feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus
while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial
data output (SO). Serial access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits
input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and HOLD# pin become SIO0 pin,
SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25L25735F MXSMIO (Serial Multi I/O) provides sequential read operation on whole chip.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte),
or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX25L25735F utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Read performance Comparison
Numbers of
Dummy Cycles
Fast Read
(MHz)
Dual Output
Fast Read
(MHz)
Quad Output
Fast Read
(MHz)
Dual IO
Fast Read
(MHz)
Quad IO
Fast Read
(MHz)
4
-
-
-
84*
70
6
104
104
84
104
84*
8
104*
104*
104*
104
104
10
133
133
133
133
133
Note: * mean default status
P/N: PM1799
6
REV. 1.2, OCT. 31, 2013
MX25L25735F
4. PIN DESCRIPTION
3. PIN CONFIGURATIONS
16-PIN SOP (300mil)
HOLD#/SIO3
VCC
NC
NC
NC
NC
CS#
SO/SIO1
1
2
3
4
5
6
7
8
SYMBOL
CS#
DESCRIPTION
Chip Select
Serial Data Input (for 1 x I/O)/ Serial
SI/SIO0
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Serial Data Output (for 1 x I/O)/ Serial
SO/SIO1
Data Input & Output (for 2xI/O or 4xI/
O read mode)
SCLK
Clock Input
Write protection: connect to GND or
WP#/SIO2 Serial Data Input & Output (for 4xI/O
read mode)
Hardware HOLD# Pin Active low or
HOLD#/SIO3 Serial Data Input & Output (for 4xI/O
read mode)
VCC
+ 3V Power Supply
GND
Ground
SCLK
SI/SIO0
NC
NC
NC
NC
GND
WP#/SIO2
16
15
14
13
12
11
10
9
8-WSON (8x6mm)
CS#
SO/SIO1
WP#/SIO2
GND
P/N: PM1799
1
2
3
4
8
7
6
5
VCC
HOLD#/SIO3
SCLK
SI/SIO0
7
REV. 1.2, OCT. 31, 2013
MX25L25735F
5. BLOCK DIAGRAM
X-Decoder
Address
Generator
Memory Array
Page Buffer
SI/SIO0
Data
Register
Y-Decoder
SRAM
Buffer
CS#
WP#/SIO2
HOLD#/SIO3
SCLK
Mode
Logic
State
Machine
HV
Generator
Clock Generator
Output
Buffer
SO/SIO1
P/N: PM1799
Sense
Amplifier
8
REV. 1.2, OCT. 31, 2013
MX25L25735F
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise.
• Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data.
• Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic
Signature command (RES), and softreset command.
• Advanced Security Features: there are some protection and security features which protect content from
inadvertent write and hostile access.
P/N: PM1799
9
REV. 1.2, OCT. 31, 2013
MX25L25735F
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be
protected as read only. The protected area definition is shown as Table 2 Protected Area Sizes, the protected
areas are more flexible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status
Register Write Protect bit.
- In four I/O and QPI mode, the feature of HPM will be disabled.
Table 2. Protected Area Sizes
Protected Area Sizes (T/B bit = 0)
Status bit
BP3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
BP2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
BP1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
BP0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Protect Level
256Mb
0 (none)
1 (1 block, protected block 511st)
2 (2 blocks, protected block 510th~511st)
3 (4 blocks, protected block 508th~511st)
4 (8 blocks, protected block 504th~511st)
5 (16 blocks, protected block 496th~511st)
6 (32 blocks, protected block 480th~511st)
7 (64 blocks, protected block 448th~511st)
8 (128 blocks, protected block 384th~511st)
9 (256 blocks, protected block 256th~511st)
10 (512 blocks, protected all)
11 (512 blocks, protected all)
12 (512 blocks, protected all)
13 (512 blocks, protected all)
14 (512 blocks, protected all)
15 (512 blocks, protected all)
Protected Area Sizes (T/B bit = 1)
Status bit
BP3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
P/N: PM1799
BP2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
BP1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
Protect Level
BP0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
256Mb
0 (none)
1 (1 block, protected block 0th)
2 (2 blocks, protected block 0th~1th)
3 (4 blocks, protected block 0th~3rd)
4 (8 blocks, protected block 0th~7th)
5 (16 blocks, protected block 0th~15th)
6 (32 blocks, protected block 0th~31st)
7 (64 blocks, protected block 0th~63rd)
8 (128 blocks, protected block 0th~127th)
9 (256 blocks, protected block 0th~255th)
10 (512 blocks, protected all)
11 (512 blocks, protected all)
12 (512 blocks, protected all)
13 (512 blocks, protected all)
14 (512 blocks, protected all)
15 (512 blocks, protected all)
10
REV. 1.2, OCT. 31, 2013
MX25L25735F
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting
device unique serial number - Which may be set by factory or system customer.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP command),
and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing Exit Security
OTP command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to "Table 8. Security Register Definition" for
security register bit definition and "Table 3. 4K-bit Secured OTP Definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range
Size
Standard Factory Lock
xxx000~xxx00F
128-bit
ESN (electrical serial number)
xxx010~xxx1FF
3968-bit
N/A
P/N: PM1799
11
Customer Lock
Determined by customer
REV. 1.2, OCT. 31, 2013
MX25L25735F
7. Memory Organization
Table 4. Memory Organization
Sector
509
1018
…
1FF0000h
1FF0FFFh
8175
1FEF000h
1FEFFFFh
…
8176
…
individual 16 sectors
lock/unlock unit:4K-byte
…
…
…
…
1FF7FFFh
1FE8000h
1FE8FFFh
8167
1FE7000h
1FE7FFFh
…
8168
1FE0000h
1FE0FFFh
8159
1FDF000h
1FDFFFFh
…
8160
8152
1FD8000h
1FD8FFFh
8151
1FD7000h
1FD7FFFh
…
1019
1FF7000h
…
1020
individual block
lock/unlock unit:64K-byte
8183
…
510
1FF8FFFh
…
1021
1FF8000h
…
1022
8184
…
511
1FFFFFFh
…
1023
Address Range
1FFF000h
…
8191
…
Block(64K-byte) Block(32K-byte)
8144
1FD0000h
1FD0FFFh
47
002F000h
002FFFFh
P/N: PM1799
…
…
…
…
0020FFFh
001F000h
001FFFFh
…
0020000h
31
0018000h
0018FFFh
23
0017000h
0017FFFh
…
24
0010FFFh
000F000h
000FFFFh
…
0010000h
15
…
16
8
0008000h
0008FFFh
7
0007000h
0007FFFh
…
…
…
0
0
32
…
1
0027FFFh
…
1
2
0028FFFh
027000h
…
3
0028000h
39
…
4
individual block
lock/unlock unit:64K-byte
40
…
2
…
5
…
individual block
lock/unlock unit:64K-byte
0
0000000h
0000FFFh
12
individual 16 sectors
lock/unlock unit:4K-byte
REV. 1.2, OCT. 31, 2013
MX25L25735F
8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended
operation.
2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby
mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z.
3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode
until next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as "Serial Modes Supported".
5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, 2READ, DREAD, 4READ, QREAD,
RDSFDP, RES, REMS, QPIID, RDDPB, RDSPB, RDPASS, RDLR, RDSPBLK, RDCR, the shifted-in instruction
sequence is followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For
the following instructions: WREN, WRDI, WRSR, SE, BE32K, BE, CE, PP, 4PP, DP, ENSO, EXSO, WRSCUR,
WPSEL, GBLK, GBULK, SPBLK, SUSPEND, RESUME, NOP, RSTEN, RST, EQIO, RSTQIO the CS# must go
high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
6.During the progress of Write Status Register, Program, Erase operation, to access the memory array is
neglected and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL
CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
shift out
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
P/N: PM1799
13
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 2. Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
LSB
MSB
SI
High-Z
SO
Figure 3. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQX
tCL
tCLQV
tCLQX
LSB
SO
SI
P/N: PM1799
tSHQZ
ADDR.LSB IN
14
REV. 1.2, OCT. 31, 2013
MX25L25735F
8-1. 256Mb Address Protocol
The original 24 bit address protocol of serial Flash can only access density size below 128Mb. For the memory
device of 256Mb and above, the 32bit address is requested for access higher memory size. MX25L25735F device
provide whole new 4-Byte address protocol, for backward compatible to the legacy commands. All the command
request for 4-Byte (32 bit) address cycle in this device.
8-2. Quad Peripheral Interface (QPI) Read Mode
QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in
command cycles, address cycles and as well as data output cycles.
Enable QPI mode
By issuing 35H command, the QPI mode is enabled. After QPI mode is enabled, the device enters quad mode (4-4-4)
without QE bit status changed.
Figure 4. Enable QPI Sequence
CS#
MODE 3
SCLK
0
1
2
3
4
5
6
7
MODE 0
SIO0
35h
SIO[3:1]
Reset QPI (RSTQIO)
To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device
returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles).
Note:
For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction.
Figure 5. Reset QPI Mode
CS#
SCLK
SIO[3:0]
P/N: PM1799
F5h
15
REV. 1.2, OCT. 31, 2013
MX25L25735F
9. HOLD FEATURES
HOLD# pin signal goes low to hold any serial communications with the device. The HOLD feature will not stop the
operation of write status register, programming, or erasing in progress.
The operation of HOLD requires Chip Select(CS#) keeping low and starts on falling edge of HOLD# pin signal
while Serial Clock (SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not start
until Serial Clock signal being low). The HOLD condition ends on the rising edge of HOLD# pin signal while Serial
Clock(SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not end until Serial
Clock being low), see Figure below.
Figure 6. Hold Condition Operation
CS#
SCLK
HOLD#
Hold
Condition
(standard)
Hold
Condition
(non-standard)
The Serial Data Output (SO) is high impedance, both Serial Data Input (SI) and Serial Clock (SCLK) are don't care
during the HOLD operation. If Chip Select (CS#) drives high during HOLD operation, it will reset the internal logic of
the device. To re-start communication with chip, the HOLD# must be at high and CS# must be at low.
Figure 7. Hold Timing
CS#
tHLCH
tCHHL
tHHCH
SCLK
tCHHH
tHLQZ
tHHQX
SO
HOLD#
* SI is "don't care" during HOLD operation.
P/N: PM1799
16
REV. 1.2, OCT. 31, 2013
MX25L25735F
10. COMMAND DESCRIPTION
Table 5. Command Set
Read/Write Array Commands
Command
(byte)
Mode
READ
FAST READ
(normal read) (fast read data)
2READ
(2 x I/O read
command)
DREAD
(1I 2O read)
(4 I/O read )
4READ
QREAD
(1I 4O read)
1st byte
SPI
4
03 (hex)
SPI
4
0B (hex)
SPI
4
BB (hex)
SPI
4
3B (hex)
SPI/QPI
4
EB (hex)
SPI
4
6B (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
Address Bytes
3rd byte
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
5th byte
ADD4
6th byte
ADD4
ADD4
ADD4
ADD4
ADD4
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
Data Cycles
Action
n bytes read
out until CS#
goes high
Command
(byte)
PP
(page program)
Mode
SPI/QPI
n bytes read
out until CS#
goes high
4PP
(quad page
program)
SPI
n bytes read
n bytes read
n bytes read
n bytes read
out by 2 x I/O
out by Dual
out by 4 x I/O out by Quad
until CS# goes output until until CS# goes output until
high
CS# goes high
high
CS# goes high
SE
(sector erase)
SPI/QPI
BE 32K
(block erase
32KB)
SPI/QPI
BE
(block erase
64KB)
SPI/QPI
CE
(chip erase)
SPI/QPI
Address Bytes
4
4
4
4
4
0
1st byte
02 (hex)
38 (hex)
20 (hex)
52 (hex)
D8 (hex)
60 or C7 (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
ADD3
5th byte
ADD4
ADD4
ADD4
ADD4
ADD4
Data Cycles
1-256
to program the
selected page
Action
1-256
quad input to
to erase the
to erase the
program the selected sector selected 32K
selected page
block
to erase the to erase whole
selected block
chip
* Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register.
P/N: PM1799
17
REV. 1.2, OCT. 31, 2013
MX25L25735F
Register/Setting Commands
Mode
SPI/QPI
SPI/QPI
SPI/QPI
RDCR
(read
configuration
register)
SPI/QPI
1st byte
06 (hex)
04 (hex)
05 (hex)
15 (hex)
Command
(byte)
WREN
WRDI
(write enable) (write disable)
RDSR
(read status
register)
WRSR
(write status/
configuration
register)
SPI/QPI
01 (hex)
2nd byte
Values
3rd byte
Values
WPSEL
(Write Protect
Selection)
EQIO
(Enable QPI)
SPI/QPI
SPI
68 (hex)
35 (hex)
4th byte
5th byte
Data Cycles
Action
sets the (WEL)
resets the
to read out the to read out the
write enable
(WEL) write
values of the values of the
latch bit
enable latch bit status register configuration
register
Command
(byte)
RSTQIO
(Reset QPI)
Mode
1st byte
QPI
F5 (hex)
PGM/ERS
Suspend
(Suspends
Program/
Erase)
SPI/QPI
B0 (hex)
PGM/ERS
Resume
(Resumes
Program/
Erase)
SPI/QPI
30 (hex)
1-2
to enter and
to write new
values of the enable individal
block protect
status/
mode
configuration
register
DP
(Deep power
down)
RDP
(Release from
deep power
down)
SBL
(Set Burst
Length)
SPI/QPI
B9 (hex)
SPI/QPI
AB (hex)
SPI/QPI
C0 (hex)
enters deep
power down
mode
release from
deep power
down mode
to set Burst
length
Entering the
QPI mode
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
P/N: PM1799
Exiting the QPI
mode
18
REV. 1.2, OCT. 31, 2013
MX25L25735F
ID/Security Commands
Command
(byte)
Mode
Address Bytes
1st byte
REMS
RDID
RES
(read electronic
QPIID
(read identific- (read electronic
manufacturer & (QPI ID Read)
ation)
ID)
device ID)
SPI
SPI/QPI
SPI
QPI
0
0
0
0
9F (hex)
AB (hex)
90 (hex)
AF (hex)
RDSFDP
ENSO
(enter secured
OTP)
EXSO
(exit secured
OTP)
SPI/QPI
3
5A (hex)
SPI/QPI
0
B1 (hex)
SPI/QPI
0
C1 (hex)
2nd byte
x
x
ADD1
3rd byte
x
x
ADD2
ADD1 (Note 1)
ADD3
4th byte
5th byte
6th byte
Action
outputs JEDEC to read out
output the
ID: 1-byte
1-byte Device Manufacturer
Manufacturer
ID
ID & Device ID
ID & 2-byte
Device ID
Address Bytes
SPI/QPI
0
WRSCUR
(write
security
register)
SPI/QPI
0
1st byte
2B (hex)
2F (hex)
Command
(byte)
Mode
RDSCUR
(read security
register)
Dummy (8)
Read SFDP
mode
ID in QPI
interface
to enter the
to exit the
4K-bit secured 4K-bit secured
OTP mode
OTP mode
SPI
0
WRPASS
(write
password
register)
SPI
0
RDPASS
(read
password
register)
SPI
0
2C (hex)
2D (hex)
28 (hex)
27 (hex)
2
2
1-8
1-8
GBLK
(gang block
lock)
GBULK
(gang block
unlock)
WRLR
(write Lock
register)
RDLR
(read Lock
register)
SPI/QPI
0
SPI/QPI
0
SPI
0
7E (hex)
98 (hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
whole chip
to read value to set the
of security lock-down bit write protect
register
as "1" (once
lock-down,
cannot be
updated)
whole chip
unprotect
Address Bytes
PASSULK
(password
unlock)
SPI
0
WRSPB
(SPB bit
program)
SPI
4
ESSPB
(all SPB bit
erase)
SPI
0
RDSPB
(read SPB
status)
SPI
4
SPBLK
(SPB lock
set)
SPI
0
1st byte
29 (hex)
E3 (hex)
E4 (hex)
E2 (hex)
A6 (hex)
Command
(byte)
Mode
RDSPBLK
WRDPB
(SPB lock
(write DPB
register read) register)
SPI
SPI
0
4
A7 (hex)
RDDPB
(read DPB
register)
SPI
4
E1 (hex)
E0 (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
ADD4
ADD4
ADD4
ADD4
1
1
5th byte
Data Cycles
8
1
2
Action
P/N: PM1799
19
REV. 1.2, OCT. 31, 2013
MX25L25735F
Reset Commands
Mode
SPI/QPI
SPI/QPI
RST
(Reset
Memory)
SPI/QPI
1st byte
00 (hex)
66 (hex)
99 (hex)
Command
(byte)
NOP
RSTEN
(No Operation) (Reset Enable)
2nd byte
3rd byte
4th byte
5th byte
Action
Note 1: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SO/SIO1 which is different
from 1 x I/O condition.
Note 2: ADD=00H will output the manufacturer ID first and AD=01H will output device ID first.
Note 3: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode.
Note 4: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the
reset operation will be disabled.
Note 5: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)"
represents there are 8 clock cycles for the data in.
P/N: PM1799
20
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-1.Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, 4PP,
SE, BE32K, BE, CE, and WRSR, which are intended to change the device content WEL bit should be set every time
after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
Figure 8. Write Enable (WREN) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
06h
High-Z
SO
Figure 9. Write Enable (WREN) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
06h
SIO[3:0]
P/N: PM1799
21
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-2.Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
The WEL bit is reset by following situations:
- Power-up
- Reset# pin driven low
- WRDI command completion
- WRSR command completion
- PP command completion
- 4PP command completion
- SE command completion
- BE32K command completion
- BE command completion
- CE command completion
- PGM/ERS Suspend command completion
- Softreset command completion
- WRSCUR command completion
- WPSEL command completion
- GBLK command completion
- GBULK command completion
- WRLR command completion
- WRPASS command completion
- PASSULK command completion
- SPBLK command completion
- WRSPB command completion
- ESSPB command completion
- WRDPB command completion
Figure 10. Write Disable (WRDI) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
SI
SO
P/N: PM1799
Command
04h
High-Z
22
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 11. Write Disable (WRDI) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
04h
SIO[3:0]
10-3.Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix
Manufacturer ID and Device ID are listed as Table 6 ID Definitions.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Figure 12. Read Identification (RDID) Sequence (SPI mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
13 14 15 16 17 18
28 29 30 31
SCLK
Mode 0
Command
SI
9Fh
Manufacturer Identification
SO
High-Z
7
6
5
2
MSB
P/N: PM1799
1
Device Identification
0 15 14 13
3
2
1
0
MSB
23
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-4.Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in Table 15 AC Characteristics. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The
RDP instruction is only for releasing from Deep Power Down Mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 6 ID
Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design,
please use RDID instruction.
Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in
progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly
if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in
Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep
Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least
tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute
instruction.
Figure 13. Read Electronic Signature (RES) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Mode 0
Command
SI
ABh
tRES2
3 Dummy Bytes
23 22 21
3
2
1
0
MSB
SO
Electronic Signature Out
High-Z
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
P/N: PM1799
24
Stand-by Mode
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 14. Read Electronic Signature (RES) Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
SCLK
MODE 0
3 Dummy Bytes
Command
SIO[3:0]
X
ABh
X
X
X
X
X
H0
L0
MSB LSB
Data In
Data Out
Stand-by Mode
Deep Power-down Mode
Figure 15. Release from Deep Power-down (RDP) Sequence (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tRES1
7
SCLK
Mode 0
Command
SI
ABh
High-Z
SO
Deep Power-down Mode
Stand-by Mode
Figure 16. Release from Deep Power-down (RDP) Sequence (QPI Mode)
CS#
Mode 3
tRES1
0
1
SCLK
Mode 0
Command
SIO[3:0]
ABh
Deep Power-down Mode
P/N: PM1799
25
Stand-by Mode
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-5.Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction is an alternative to the Release from Power-down/Device ID instruction that provides both the
JEDEC assigned manufacturer ID and the specific device ID.
The REMS instruction is very similar to the Release from Power-down/Device ID instruction. The instruction is
initiated by driving the CS# pin low and shift the instruction code "90h" followed by two dummy bytes and one
bytes address (A7~A0). After which, the Manufacturer ID for Macronix (C2h) and the Device ID are shifted out
on the falling edge of SCLK with most significant bit (MSB) first. The Device ID values are listed in Table 6 of ID
Definitions. If the one-byte address is initially set to 01h, then the device ID will be read first and then followed by the
Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The
instruction is completed by driving CS# high.
Figure 17. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
4
5
6
7
8
Command
SI
9 10
2 Dummy Bytes
15 14 13
90h
3
2
1
0
High-Z
SO
CS#
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
ADD (1)
SI
7
6
5
4
3
2
1
0
Manufacturer ID
SO
7
6
5
4
3
2
1
Device ID
0
7
6
5
4
3
2
MSB
MSB
1
0
7
MSB
Notes:
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
P/N: PM1799
26
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-6.QPI ID Read (QPIID)
User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue
QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant
bit (MSB) first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 6. ID Definitions
Command Type
RDID
9Fh
RES
ABh
REMS
90h
QPIID
AFh
P/N: PM1799
MX25L25735F
Manufactory ID
C2
Manufactory ID
C2
Manufactory ID
C2
Memory type
20
Electronic ID
18
Device ID
18
Memory type
20
27
Memory density
19
Memory density
19
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-7.Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 18. Read Status Register (RDSR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
05h
SI
SO
Status Register Out
High-Z
7
6
5
4
3
2
1
Status Register Out
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 19. Read Status Register (RDSR) Sequence (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
05h H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Status Byte Status Byte Status Byte
P/N: PM1799
28
Status Byte
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-8.Read Configuration Register (RDCR)
The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at
any time (even in program/erase/write configuration register condition). It is recommended to check the Write in
Progress (WIP) bit before sending a new instruction when a program, erase, or write configuration register operation
is in progress.
The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration
Register data out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 20. Read Configuration Register (RDCR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
15h
SI
SO
Configuration register Out
High-Z
7
6
5
4
3
2
1
0
Configuration register Out
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 21. Read Configuration Register (RDCR) Sequence (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
15h H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Config. Byte Config. Byte Config. Byte
P/N: PM1799
29
Config. Byte
REV. 1.2, OCT. 31, 2013
MX25L25735F
For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows:
Figure 22. Program/Erase flow with read array data
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Read array data
(same address of PGM/ERS)
No
Verify OK?
Yes
Program/erase successfully
Program/erase
another block?
No
Program/erase fail
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
Program/erase completed
P/N: PM1799
30
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 23. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag)
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
RDSCUR command
Yes
P_FAIL/E_FAIL =1 ?
No
Program/erase fail
Program/erase successfully
Program/erase
another block?
No
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
Program/erase completed
P/N: PM1799
31
REV. 1.2, OCT. 31, 2013
MX25L25735F
Status Register
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the
device will not accept program/erase/write status register instruction. The program/erase command will be ignored
if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next
program/erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL
bit needs to be confirm to be 0.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area
(as defined in Table 2) of the device to against the program/erase instruction without hardware protection mode being
set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to
be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE),
Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0)
set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is un-protected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#,
HOLD# are enabled. While QE is "1", it performs Quad I/O mode and WP#, HOLD# are disabled. In the other word,
if the system goes into four I/O mode (QE=1), the feature of HPM and HOLD# will be disabled.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
Status Register
bit7
SRWD (status
register write
protect)
bit6
QE
(Quad
Enable)
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
1=Quad
1=status
Enable
register write
(note 1)
(note 1)
0=not Quad
disable
Enable
Non-volatile Non-volatile Non-volatile Non-volatile
bit
bit
bit
bit
Note 1: see the Table 2 "Protected Area Size".
P/N: PM1799
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
(note 1)
(note 1)
Non-volatile
bit
Non-volatile
bit
32
bit1
bit0
WEL
WIP
(write enable
(write in
latch)
progress bit)
1=write
1=write
enable
operation
0=not write 0=not in write
enable
operation
volatile bit
volatile bit
REV. 1.2, OCT. 31, 2013
MX25L25735F
Configuration Register
The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured
after the CR bit is set.
ODS bit
The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as
defined in Output Driver Strength Table) of the device. The Output Driver Strength is defaulted as 30 Ohms when
delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed.
TB bit
The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect
area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as
“0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory
device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed.
Configuration Register
bit7
DC1
(Dummy
cycle 1)
bit6
DC0
(Dummy
cycle 0)
bit5
bit4
Reserved
Reserved
(note 2)
(note 2)
x
x
volatile bit
volatile bit
x
x
bit3
bit2
bit1
bit0
TB
ODS 2
ODS 1
ODS 0
(top/bottom (output driver (output driver (output driver
selected)
strength)
strength)
strength)
0=Top area
protect
1=Bottom
(note 1)
(note 1)
(note 1)
area protect
(Default=0)
OTP
volatile bit
volatile bit
volatile bit
Note 1: see "Output Driver Strength Table"
Note 2: see "Dummy Cycle and Frequency Table (MHz)"
P/N: PM1799
33
REV. 1.2, OCT. 31, 2013
MX25L25735F
Output Driver Strength Table
ODS2
0
0
0
0
1
1
1
1
ODS1
0
0
1
1
0
0
1
1
ODS0
0
1
0
1
0
1
0
1
Description
Reserved
90 Ohms
60 Ohms
45 Ohms
Reserved
20 Ohms
15 Ohms
30 Ohms (Default)
Note
Impedance at VCC/2
Dummy Cycle and Frequency Table (MHz)
DC[1:0]
00 (default)
01
10
11
DC[1:0]
00 (default)
01
10
11
DC[1:0]
00 (default)
01
10
11
P/N: PM1799
Numbers of Dummy
clock cycles
8
6
8
10
Numbers of Dummy
clock cycles
4
6
8
10
Fast Read
104
104
104
133
Dual Output Fast
Read
104
104
104
133
Quad Output Fast
Read
104
84
104
133
Dual IO Fast Read
84
104
104
133
Numbers of Dummy
Quad IO Fast Read
clock cycles
6
84
4
70
8
104
10
133
34
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-9.Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before
sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write
Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1,
BP0) bits to define the protected area of memory (as shown in Table 2). The WRSR also can set or reset the Quad
enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/
SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot
be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and
not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes
high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress.
The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write
Enable Latch (WEL) bit is reset.
Figure 24. Write Status Register (WRSR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Mode 0
SI
SO
command
01h
Status
Register In
7
6
4
5
Configuration
Register In
2
3
0 15 14 13 12 11 10 9
1
8
MSB
High-Z
Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command.
Figure 25. Write Status Register (WRSR) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
Mode 3
SCLK
Mode 0
Mode 0
SR in
Command
SIO[3:0]
P/N: PM1799
01h
H0
35
L0
CR in
H1
L1
REV. 1.2, OCT. 31, 2013
MX25L25735F
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0 and T/B bit, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at
software protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and T/B bit and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0 and T/B bit.
If the system enter QPI or set QE=1, the feature of HPM will be disabled.
Table 7. Protection Modes
Mode
Software protection
mode (SPM)
Hardware protection
mode (HPM)
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in Table 2.
P/N: PM1799
36
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 26. WRSR flow
start
WREN command
RDSR command
WEL=1?
No
Yes
WRSR command
Write status register data
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Verify OK?
No
Yes
WRSR successfully
P/N: PM1799
WRSR fail
37
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 27. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCLK
01h
SI
SO
High-Z
Note: WP# must be kept high until the embedded operation finish.
P/N: PM1799
38
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-10. Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 4-byte address on
SI→ data out on SO→to end READ operation can use CS# to high at any time during data out.
Figure 28. Read Data Bytes (READ) Sequence (SPI Mode only)
CS#
0
1
2
3
4
5
6
7
8
9 10
36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Command
SI
03
32 ADD Cycles
A31 A30 A29
A3 A2 A1 A0
MSB
SO
Data Out 1
High-Z
D7 D6 D5 D4 D3 D2 D1 D0 D7
MSB
P/N: PM1799
Data Out 2
39
MSB
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-11.Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→ 4-byte address on SI→ 8 dummy cycles (default)→ data out on SO→ to end FAST_READ
operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 29. Read at Higher Speed (FAST_READ) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6 7
8
9 10
36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCLK
Command
SI
SO
0Bh
Configurable
Dummy Cycle
32 ADD Cycles
A31 A30 A29
A3 A2 A1 A0
Data Out 1
High-Z
Data Out 2
D7 D6 D5 D4 D3 D2 D1 D0 D7
MSB
P/N: PM1799
40
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-12. Dual Output Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD
instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing DREAD instruction is: CS# goes low→ sending DREAD instruction→ 4-byte address on
SIO0→ 8 dummy cycles (default) on SIO0→ data out interleave on SIO1 & SIO0→ to end DREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 30. Dual Read Mode Sequence
CS#
0
1
2
3
4
5
6
7
8
SCLK
…
Command
SI/SIO0
SO/SIO1
P/N: PM1799
38 39 40
9
3Bh
…
32 ADD Cycle
A31 A30
…
High Impedance
47 48 49 50 51 52 53
A1 A0
Configurable
Dummy Cycle
Data Out
1
Data Out
2
D6 D4 D2 D0 D6 D4
D7 D5 D3 D1 D7 D5
41
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-13. 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ
instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 4-byte address
interleave on SIO1 & SIO0→ 4 dummy cycles (default) on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to
end 2READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 31. 2 x I/O Read Mode Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
21 22 23 24 25 26 27 28 29 30 31 32 33 34
Mode 3
SCLK
Mode 0
Command
SI/SIO0
SO/SIO1
P/N: PM1799
BBh
16 ADD Cycles
Configurable
Dummy Cycle
Data
Out 1
Data
Out 2
A30 A28 A26
A4 A2 A0
D6 D4 D2 D0 D6 D4 D2 D0
A31 A29 A27
A5 A3 A1
D7 D5 D3 D1 D7 D5 D3 D1
42
Mode 0
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-14. Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD
instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 4-byte address on
SI → 8 dummy cycle (Default) → data out interleave on SO3, SO2, SO1 & SO0→ to end QREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 32. Quad Read Mode Sequence
CS#
0
1
2
3
4
5
6
7
8
…
Command
SO0
SO1
SO2
SO3
P/N: PM1799
37 38 39 40 41
9
SCLK
6Bh
…
32 ADD Cycles
A31 A30
…
High Impedance
46 47 48 49 50
A2 A1 A0
8 dummy cycles
Data Data
Out 1 Out 2
Data
Out 3
D4 D0 D4 D0 D4
D5 D1 D5 D1 D5
High Impedance
D6 D2 D6 D2 D6
High Impedance
D7 D3 D7 D3 D7
43
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-15. 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending
4READ instruction→ 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out
interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out.
4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence
of issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 4-byte address interleave
on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 & SIO0→ to
end 4READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 33. 4 x I/O Read Mode Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCLK
Command
8 ADD Cycles
Performance
Enhance
Indicator
(Note1, 2)
Configurable
Dummy Cycle
(Note 3)
SIO0
SIO1
SIO2
SIO3
EBh
High Impedance
High Impedance
High Impedance
Data Data
Out 1 Out 2
Data
Out 3
A28 A24 A20 A16 A12 A8 A4 A0
P4 P0
D4 D0 D4 D0 D4
A29 A25 A21 A17 A13 A9 A5 A1
P5 P1
D5 D1 D5 D1 D5
A30 A26 A22 A18 A14 A10 A6 A2
P6 P2
D6 D2 D6 D2 D6
A31 A27 A23 A19 A15 A11 A7 A3
P7 P3
D7 D3 D7 D3 D7
Notes:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
P/N: PM1799
44
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 34. 4 x I/O Read Mode Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MODE 3
SCLK
MODE 0
SIO[3:0]
MODE 0
EBh
Data In
P/N: PM1799
A7 A6 A5 A4 A3 A2 A1 A0
X
X
X
X
Configurable
Dummy Cycle
32 ADD Cycles
45
X
X
H0 L0 H1 L1 H2 L2
MSB
Data Out
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-16. Burst Read
This device supports Burst Read in both SPI and QPI mode.
To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte (8-clocks),
following 4 clocks defining wrap around enable with “0h” and disable with“1h”.
The next 4 clocks are to define wrap around depth. Their definitions are as the following table:
Data
00h
01h
02h
03h
1xh
Wrap Around
Yes
Yes
Yes
Yes
No
Wrap Depth
8-byte
16-byte
32-byte
64-byte
X
The wrap around unit is defined within the 256Byte page, with random initial address. It is defined as “wrap-around
mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0” command
in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change
wrap around depth, it is requried to issue another “C0” command in which data=“0xh”. Both QPI and SPI “EBh”
support wrap around feature after wrap around is enabled. Burst read is supported in both SPI and QPI mode. The
device is default without Burst read.
Figure 35. SPI Mode
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
D7
D6
10
11
12
13
14
15
SCLK
Mode 0
SIO
C0h
D5
D4
D3
D2
D1
D0
Figure 36. QPI Mode
CS#
Mode 3
0
1
2
3
SCLK
Mode 0
SIO[3:0]
C0h
H0
MSB
L0
LSB
Note: MSB=Most Significant Bit
LSB=Least Significant Bit
P/N: PM1799
46
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-17. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles.
Performance enhance mode is supported in both SPI and QPI mode.
Both QPI and SPI "EBh" commands support enhance mode. The performance enhance mode is not supported in
dual I/O mode.
To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh
can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer
toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered.
Issuing ”FFh” data cycle can also exit enhance mode. The system then will leave performance enhance mode and
return to normal operation.
After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of
the first clock as address instead of command cycle.
Another sequence of issuing 4READ instruction especially useful in random access is : CS# goes low→sending 4
READ instruction→ 4-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling bit
P[7:0]→ 4 dummy cycles (Default) →data out still CS# goes high → CS# goes low (reduce 4 Read instruction) →
4-bytes random access address.
P/N: PM1799
47
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 37. 4 x I/O Read enhance performance Mode Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
n
SCLK
Mode 0
Data
Out 2
Data
Out n
Configurable
Dummy Cycle
(Note 2)
A28 A24 A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0
D4 D0
SIO1
A29 A25 A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1
D5 D1
SIO2
A30 A26 A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2
D6 D2
SIO3
A31 A27 A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3
D7 D3
Command
EBh
SIO0
8 ADD Cycles
Data
Out 1
Performance
enhance
indicator (Note 1)
CS#
n+1
...........
n+9 ...... n+11 ........... n+15
...........
Mode 3
SCLK
8 ADD Cycles
Data
Out 1
Performance
enhance
indicator (Note 1)
Data
Out 2
Data
Out n
Mode 0
Configurable
Dummy Cycle
(Note 2)
SIO0
A28 A24 A20 A16 A12 A8 A4 A0
P4 P0
D4 D0 D4 D0
D4 D0
SIO1
A29 A25 A21 A17 A13 A9 A5 A1
P5 P1
D5 D1 D5 D1
D5 D1
SIO2
A30 A26 A22 A18 A14 A10 A6 A2
P6 P2
D6 D2 D6 D2
D6 D2
SIO3
A31 A27 A23 A19 A15 A11 A7 A3
P7 P3
D7 D3 D7 D3
D7 D3
Notes:
1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
P/N: PM1799
48
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 38. 4 x I/O Read enhance performance Mode Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
A3
A2
A1
A0
10
11
12
13
14
15
X
X
16
17
18
19
H0
L0 H1
L1
SCLK
Mode 0
SIO[3:0]
A7 A6
EBh
A5
A4
X
X
MSB LSB MSB LSB
P(7:4) P(3:0)
8 ADD Cycles
Command
Data Out
performance
enhance
indicator
Configurable
Dummy Cycles
(Note 1)
CS#
n+1
.............
SCLK
Mode 0
SIO[3:0]
A7 A6
A5
A4
A3
A2
A1
X
A0
X
P(7:4) P(3:0)
8 ADD Cycles
performance
enhance
indicator
X
X
H0
L0
H1
L1
MSB LSB MSB LSB
Data Out
Configurable
Dummy Cycles
(Note 1)
Notes:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register.
P/N: PM1799
49
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-18. Performance Enhance Mode Reset
To conduct the Performance Enhance Mode Reset operation in SPI mode, 3FFh data cycle(10 clocks in 4-byte
address mode), should be issued in 1I/O sequence. In QPI Mode, FFFFFFFFFFh data cycle (10 clocks in 4-byte
address mode), in 4I/O should be issued.
If the system controller is being Reset during operation, the flash device will return to the standard SPI operation.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 39. Performance Enhance Mode Reset for Fast Read Quad I/O using 4Byte Address Sequence (SPI
Mode)
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
0
1
2
3
4
5
6
7
8
Mode 3
9
Mode ０
Mode ０
SIO0
3FFh
SIO1
Don’t Care
SIO2
Don’t Care
SIO3
Don’t Care
Figure 40. Performance Enhance Mode Reset for Fast Read Quad I/O using 4Byte Address Sequence (QPI
Mode)
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
SIO[3:0]
P/N: PM1799
0
1
2
3
4
5
6
7
Mode ０
8
9
Mode 3
Mode ０
FFFFFFFFFFh
50
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-19. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before
sending the Sector Erase (SE). Any address of the sector (see "Table 4. Memory Organization") is a valid address
for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the
address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 4-byte address on SI→
CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE
timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Sector Erase (SE) instruction will not be executed on the block.
Figure 41. Sector Erase (SE) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9
37 38 39
SCLK
…
32-Bit Address
Command
SI
20h
…
A31 A30
A2 A1 A0
MSB
Figure 42. Sector Erase (SE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
SCLK
Mode 0
32-Bit Address
Command
SIO[3:0]
20h A7 A6 A5 A4 A3 A2 A1 A0
MSB
P/N: PM1799
51
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-20. Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE32K). Any address of the block (see "Table 4. Memory Organization") is a
valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least
significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A15] (Am is the most significant address) select the 32KB block address.
The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 4-byte address
on SI→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the
tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector
Protect Mode), the Block Erase (BE32K) instruction will not be executed on the block.
Figure 43. Block Erase 32KB (BE32K) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
37 38 39
9
SCLK
Mode 0
Command
SI
32-Bit Address
52h
A31 A30
A2
A1 A0
MSB
Figure 44. Block Erase 32KB (BE32K) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
SCLK
Mode 0
32-Bit Address
Command
SIO[3:0]
52h
A7 A6 A5 A4 A3 A2 A1 A0
MSB
P/N: PM1799
52
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-21. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "Table 4. Memory
Organization") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 4-byte address on SI→
CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block
is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode),
the Block Erase (BE) instruction will not be executed on the block.
Figure 45. Block Erase (BE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
37 38 39
SCLK
Mode 0
Command
SI
32-Bit Address
D8h
A31 A31
A2 A1 A0
MSB
Figure 46. Block Erase (BE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
SCLK
Mode 0
32-Bit Address
Command
SIO[3:0]
D8h
A7 A6 A5 A4 A3 A2 A1 A0
MSB
P/N: PM1799
53
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-22. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE
timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
When the chip is under "Block protect (BP) Mode" (WPSEL=0). The Chip Erase (CE) instruction will not be
executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0".
When the chip is under "Advances Sector Protect Mode" (WPSEL=1). The Chip Erase (CE) instruction will be
executed on unprotected block. The protected Block will be skipped. If one (or more) 4K byte sector was protected
in top or bottom 64K byte block, the protected block will also skip the chip erase command.
Figure 47. Chip Erase (CE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
60h or C7h
Figure 48. Chip Erase (CE) Sequence (QPI Mode)
CS#
Mode 3
0
1
SCLK
Mode 0
SIO[3:0]
P/N: PM1799
Command
60h or C7h
54
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-23. Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device
programs only the last 256 data bytes sent to the device. If the entire 256 data bytes are going to be programmed,
A7-A0 (The eight least significant address bits) should be set to 0. The last address byte (the 8 least significant
address bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that
exceed page length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently
selected page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request
page and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will
be programmed at the request address of the page. There will be no effort on the other data bytes of the same pag.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 4-byte address on SI→ at
least 1-byte on data on SI→ CS# goes high.
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be
executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP
timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Page Program (PP) instruction will not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM1799
55
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 49. Page Program (PP) Sequence (SPI Mode)
2087
2086
2085
2084
2083
2082
36 37 38 39 40 41 42 43 44 45 46 47
2081
0 1 2 3 4 5 6 7 8 9 10
2080
CS#
SCLK
Command
32 ADD Cycles
02h
SI
A31 A30 A29
A3 A2 A1 A0
Data Byte 1
Data Byte 256
D7 D6 D5 D4 D3 D2 D1 D0
D7 D6 D5 D4 D3 D2 D1 D0
MSB
MSB
Figure 50. Page Program (PP) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
.....
SCLK
Mode 0
32 ADD Cycles
Command
SIO[3:0]
P/N: PM1799
02h
A7
A6
A5
A4
A3
Data Byte Data Byte Data Byte
1
2
3
A2
A1
A0
56
H0
L0
H1
L1
H2
L2
.....
.....
Data Byte
256
H255 L255
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-24. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to
"1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1,
SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of
application. The other function descriptions are as same as standard page program.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 4-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector
Protect Mode), the Quad Page Program (4PP) instruction will not be executed.
Figure 51. 4 x I/O Page Program (4PP) Sequence (SPI Mode only)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19
SCLK
…
Command
8 ADD cycles
Data Data
Byte 1 Byte 2
Data
Byte 256
A28 A24 A20 A16 A12 A8 A4 A0 D4 D0 D4 D0
…
D4 D0
SIO1
A29 A25 A21 A17 A13 A9 A5 A1 D5 D1 D5 D1
…
D5 D1
SIO2
A30 A26 A22 A18 A14 A10 A6 A2 D6 D2 D6 D2
…
D6 D2
SIO3
A31 A27 A23 A19 A15 A11 A7 A3 D7 D3 D7 D3
…
D7 D3
SIO0
P/N: PM1799
526 527
38h
57
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-25. Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby
current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction
to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are
ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby
mode.
The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being
reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and
when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the
byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed.
As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode.
Figure 52. Deep Power-down (DP) Sequence (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tDP
7
SCLK
Mode 0
Command
B9h
SI
Stand-by Mode
Deep Power-down Mode
Figure 53. Deep Power-down (DP) Sequence (QPI Mode)
CS#
Mode 3
0
tDP
1
SCLK
Mode 0
Command
SIO[3:0]
B9h
Stand-by Mode
P/N: PM1799
58
Deep Power-down Mode
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-26. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While device is in 4K-bit secured
OTPmode, main array access is not available. The additional 4K-bit secured OTP is independent from main array
and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Please note that after issuing ENSO command user can only access secure OTP region with standard read or
program procedure. Furthermore, once security OTP is lock down, only read related commands are valid.
10-27. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
10-28. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
10-29. Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction
is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO
bit) for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
P/N: PM1799
59
REV. 1.2, OCT. 31, 2013
MX25L25735F
Security Register
The definition of the Security Register bits is as below:
Write Protection Selection bit. Please reference to "Write Protection Selection bit"
Erase Fail bit. The Erase Fail bit is a status flag, which shows the status of last Erase operation. It will be set to "1",
if the erase operation fails. It will be set to "0", if the last operation is success. Please note that it will not interrupt or
stop any operation in the flash memory.
Program Fail bit. The Program Fail bit is a status flag, which shows the status of last Program operation. It will be
set to "1", if the program operation fails or the program region is protected. It will be set to "0", if the last operation is
success. Please note that it will not interrupt or stop any operation in the flash memory.
Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use
ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB
is set to "1". ESB is cleared to "0" after erase operation resumes.
Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may
use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command,
PSB is set to "1". PSB is cleared to "0" after program operation resumes.
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is
"0", it indicates non-factory lock; "1" indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for
customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured
OTP area cannot be updated any more. While it is in 4K-bit secured OTP mode, main array access is not allowed.
Table 8. Security Register Definition
bit7
bit6
bit5
bit4
WPSEL
E_FAIL
P_FAIL
Reserved
0=normal
WP mode
1=individual
mode
(default=0)
0=normal
Erase
succeed
1=indicate
Erase failed
(default=0)
0=normal
Program
succeed
1=indicate
Program
failed
(default=0)
-
0=Erase
is not
suspended
1= Erase
suspended
(default=0)
Non-volatile
bit (OTP)
Volatile bit
Volatile bit
Volatile bit
Volatile bit
P/N: PM1799
bit3
bit2
ESB
PSB
(Erase
(Program
Suspend bit) Suspend bit)
60
bit1
bit0
LDSO
Secured OTP
(indicate if
indicator bit
lock-down)
0 = not lock0=Program
0 = nondown
is not
factory
1 = lock-down
suspended
lock
(cannot
1= Program
1 = factory
program/
suspended
lock
erase
(default=0)
OTP)
Non-volatile
Non-volatile
Volatile bit
bit
bit (OTP)
(OTP)
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-30. Write Protection Selection (WPSEL)
There are two write protection methods provided on this device, (1) Block Lock (BP) protection mode (2) Advanced
Sector protection mode. If WPSEL=0, flash is under BP protection mode. If WPSEL=1, flash is under Advanced
Sector protection mode. The default value of WPSEL is “0”. WPSEL command can be used to set WPSEL=1.
Please note that WPSEL is an OTP bit. Once WPSEL is set to 1, there is no chance to recovery WPSEL back
to “0”. If the flash is put on BP mode, the Advanced Sector protection mode is disabled. Contrarily, if flash is on the
Advanced Sector protection mode, the BP mode is disabled.
Every time after the system is powered-on, and the Security Register bit 7 is checked to be WPSEL=1, all
the blocks or sectors will be write protected by Dynamic Protected Bit (DPB) in default. User may only unlock
the blocks or sectors via GBULK instruction. Program or erase functions can only be operated after the Unlock
instruction is conducted.
When WPSEL = 0: Block Lock (BP) protection mode,
Array is protected by BP3~BP0 and BP bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7 of status
register that can be set by WRSR command.
When WPSEL =1: Advanced Sector protection mode,
Blocks are individually protected by their own SPB or DPB lock bits which are set to “1” after power up. When the
system accepts and executes WPSEL instruction, the bit 7 in security register will be set. It will activate WRLR,
RDLR, WRPASS, RDPASS, PASSULK, WRSPB, ESSPB, SPBLK, RDSPBLK, WRDPB, RDDPB, GBLK, GBULK
etc instructions to conduct block lock protection and replace the original Software Protect Mode (SPM) use (BP3~BP0)
indicated block methods. Under the Advanced Sector protection mode (WPSEL=1), hardware protection is
performed by driving WP#=0. Once WP#=0 all array blocks/sectors are protected regardless of the contents of SPB
or DPB lock bits.
The sequence of issuing WPSEL instruction is: CS# goes low → sending WPSEL instruction to enter the individual
block protect mode → CS# goes high.
Write Protection Selection
Start
(Default in BP Mode)
WPSEL=1
Set
WPSEL Bit
Advance
Sector Protection
Set
Lock Register
WPSEL=0
Block Protection
(BP)
Bit 1 =0
Bit 2 =0
Password
Protection
P/N: PM1799
Solid
Protection
61
Dynamic
Protection
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 54. WPSEL Flow
start
WREN command
RDSCUR command
Yes
WPSEL=1?
No
WPSEL disable,
block protected by BP[3:0]
WPSEL command
RDSR command
WIP=0?
No
Yes
RDSCUR command
WPSEL=1?
No
Yes
WPSEL set successfully
WPSEL set fail
WPSEL enable.
Block protected by Advance Sector Protection
P/N: PM1799
62
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-31. Advanced Sector Protection
There are two ways to implement software Advanced Sector Protection on this device: Password method or Sol­id
method. Through these two protection methods, user can disable or enable the programming or erasing op­eration
to any individual sector or all sectors.
There is a non-volatile (SPB) and volatile (DPB) protection bit related to the single sector in main flash array. Each
of the sectors is protected from programming or erasing operation when the bit is set. The temporary unprotect solid
write protect bit (USPB) can temporarily unprotect the sectors protected by SPB.
The figure below helps describing an overview of these methods. The device is default to the Solid mode when
shipped from factory. The detail algorithm of advanced sector protection is shown as follows:
Figure 55. Advanced Sector Protection Overview
Start
Bit 1=0
Bit 2=0
Set
Lock Register ?
Solid Protection Mode
Password Protection Mode
Set 64 bit Password
Set
SPB Lock Bit ?
SPBLK = 0
SPB Lock bit locked
All SPB can not be changeable
SPBLK = 1
SPB Lock bit Unlocked
SPB is changeable
Dynamic Protect Bit Register
(DPB)
DPB=1 sector protect
Sector Array
DPB=0 sector unprotect
P/N: PM1799
SPB Access Register
(SPB)
Temporary Unprotect
SPB bit (USPB)
SPB=1 Write Protect
USPB=0 SPB bit is disabled
SPB=0 Write Unprotect
USPB=1 SPB bit is effective
DPB 0
SA 0
SPB 0
DPB 1
SA 1
SPB 1
DPB 2
SA 2
SPB 2
:
:
:
:
:
:
DPB N-1
SA N-1
SPB N-1
DPB N
SA N
SPB N
63
USPB
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-31-1. Lock Register
User can choose favorite sector protecting method via setting Lock Register bits 1 and 2. Lock Register is a 16bit one-time programmable register. Once bit 1 or bit 2 has been programmed (cleared to "0"), they will be locked
in that mode and the others will be disabled permanently. Bit 1 and bit 2 can not be programmed at the same time,
otherwise the device will abort the operation.
If user selects Password Protection mode, the password setting is required. User can set password by issuing
WRPASS command.
Lock Register
Bit 15-3
Reserved
x
OTP
Bit 2
Password Protection Mode Lock Bit
0=Password Protection Mode Enable
1= Password Protection Mode not
enable (Default =1)
OTP
Bit 1
Solid Protection Mode Lock Bit
Bit0
Reserved
0=Solid Protection Mode Enable
1= Solid Protection Mode not enable (Default =1)
x
OTP
OTP
Notes:
1. While bit 2 or bit 1 has been "0" status, other bits can't be changed any more. If set lock register program mode,
program fail will be set to "1".
2. While bit 2 and bit 1 is "1" status,other bits can be programmed, program fail will be set to "1".
Figure 56. Read Lock Register (RDLR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
2Dh
SI
Register Out
High-Z
SO
7
6
5
4
3
2
Register Out
1
0 15 14 13 12 11 10 9
7
8
MSB
MSB
Figure 57. Write Lock Register (WRLR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Mode 0
SI
SO
P/N: PM1799
Command
2Ch
High-Z
Lock Register In
7
6
5
4
3
2
1
0 15 14 13 12 11 10 9
8
MSB
64
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-31-2. SPB Lock Bit (SPBLB)
The Solid Protection Bit Lock Bit (SPBLB) is assigned to control all SPB status. It is unique and volatile.
The default status of this register is determined by Lock Register bit 1 and bit 2 status. Refer to SPB Lock Register
for more SPB Lock information.
When under Solid Protect Mode, there is no software command sequence requested to unlock this bit. To clear the
SPB lock bit, just take the device through a reset or a power-up cycle. When under Password Protection Mode, in
order to prevent modification, the SPB Lock Bit must be set after all SPBs are setting the desired status.
SPB Lock Register
Bit
7-1
Description
Reserved
0
SPBLK (Lock SPB Bit)
Bit Status
X
0= SPB bit protected
1= SPB bit unprotected
Default
0000000
Solid protected Mode=1
Password Protected Mode=0
Type
Volatile
Volatile
Figure 58. SPB Lock Bit Set (SPBLK) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
A6h
High-Z
SO
Figure 59. Read SPB Lock Register (RDSPBLK) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
A7h
SI
SO
High-Z
Register Out
7
6
5
4
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
P/N: PM1799
3
Register Out
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MX25L25735F
10-31-3. Solid Protection Bits
The Solid write Protection bit (SPB) is a nonvolatile bit with the same endurances as the Flash memory. It is
assigned to each sector individually.
When a SPB is set to “1”, the associated sector may be protected, preventing any program or erase operation
on this sector. The SPB bits are set individually by WRSPB command. However, it cannot be cleared individually.
Issuing the ESSPB command will erase all SPB in the same time.
To unprotect a protected sector (corresponding SPB cleared to “0”), the SPB lock bit must be unlocked first. Under
password protection mode (lock register bit 2 set as "0"), a PASSULK command is requested before unlocking SPB
lock bit. However, while the device is under Solid Protection mode (lock register bit 1 set as "0"), just a reset or a
power-up cycle can unlock the SPB lock bit.
After the SPB lock bit unlocked, the SPB status can be changed for desired settings. To lock the Solid Protection
Bits after the modification has finished, the SPB Lock Bit must be set once again.
To verify the programming state of the SPB for a given sector, issuing a RDSPB Command to the device is required.
Note:
1. Once SPB Lock Bit is set, its program or erase command will not be executed and time-out without programming
or erasing the SPB.
SPB Register
Bit
Description
7 to 0
SPB (Solid protected Bit)
P/N: PM1799
Bit Status
00h= SPB for the sector address unprotected
FFh= SPB for the sector address protected
66
Default
Type
00h
Non-volatile
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 60. Read SPB Status (RDSPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
Command
SI
32-Bit Address
E2h
A31 A30
A2 A1 A0
MSB
Data Out
High-Z
SO
7
6
5
4
3
2
1
0
MSB
Figure 61. SPB Erase (ESSPB) Sequence
CS#
1
0
Mode 3
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
E4h
High-Z
SO
Figure 62. SPB Program (WRSPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
37 38 39
SCLK
Mode 0
SI
Command
32-Bit Address
E3h
A31 A30
A2 A1 A0
MSB
P/N: PM1799
67
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MX25L25735F
10-31-4. Dynamic Write Protection Bits
The Dynamic Protection features a volatile type protection to each individual sector. It can protect sectors from
unintentional change, and is easy to disable when there are necessary changes.
All DPBs are default as protected (FFh) after reset or upon power up cycle. Via setting up Dynamic Protection bit (DPB)
by write DPB command (WRDPB), user can cancel the Dynamic Protection of associated sector.
The Dynamic Protection only works on those unprotected sectors whose SPBs are cleared. After the DPB state is
cleared to “0”, the sector can be modified if the SPB state is unprotected state.
DPB Register
Bit
Description
7 to 0
DPB (Dynamic protected Bit)
Bit Status
Default
00h= DPB for the sector address unprotected
FFh
FFh= DPB for the sector address protected
Type
Volatile
Figure 63. Read DPB Register (RDDPB) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
Command
SI
32-Bit Address
E0h
A31 A30
A2 A1 A0
MSB
Data Out
High-Z
SO
7
6
5
4
3
2
1
0
MSB
Figure 64. Write DPB Register (WRDPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
SI
Command
E1h
A31 A30
A2 A1 A0
MSB
P/N: PM1799
Data Byte 1
32-Bit Address
7
6
5
4
3
2
1
0
MSB
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REV. 1.2, OCT. 31, 2013
MX25L25735F
10-31-5. Temporary Un-protect Solid write protect bit (USPB)
Temporary Un-protect Solid write Protect Bit is volatile bit. Software can temporarily unprotect write protect sectors
despite of SPBs' property when DPBs are cleared. While the USPB=1, all the SPBs’ property is masked.
Notes:
1. Upon power up, the USPB status is default protected. The USPB can be unprotected (to “0”) or protected (to “1”)
as often as needed. The hardware reset will reset USPB/DPB to their default values.
2. Please refer to "10-31-7. Sector Protection States Summary Table" for the sector state with the protection status
of DPB/SPB/USPB bits.
10-31-6. Gang Block Lock/Unlock (GBLK/GBULK)
These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is a chip-based
protected or unprotected operation. It can enable or disable all DPB.
The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction.
The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction
→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed.
10-31-7. Sector Protection States Summary Table
DPB bit
0
0
0
0
1
1
1
1
P/N: PM1799
Protection Status
SPB bit
0
0
1
1
0
0
1
1
Sector State
USPB bit
0
1
0
1
0
1
0
1
Unprotect
Unprotect
Unprotect
Protect
Protect
Protect
Protect
Protect
69
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-31-8. Password Protection Mode
The security level of Password Protection Method is higher than the Solid protection mode. The 64 bit password is
requested before modify SPB lock bit status. When device is under password protection mode, the SPB lock bit is set “0”,
after a power-up cycle or Reset Command.
A correct password is required for password Unlock command, to unlock the SPB lock bit. Await 2us is necessary to
unlocked the device after valid password is given. After that, the SPB bits are allows to be changed. The Password
Unlock command are issued slower than 2 μs every time, to prevent hacker from trying all the 64-bit password
combinations.
To place the device in password protection mode, a few more steps are required. First, prior to entering the
password protection mode, it is necessary to set a 64-bit password to verify it. Password verification is only
allowed during the password programming operation. Second, the password protection mode is then activated
by programming the Password Protection Mode Lock Bit to”0”. This operation is not reversible. Once the bit is
programmed, it cannot be erased, and the device remains permanently in password protection mode, and the 64-bit
password can neither be retrieved nor reprogrammed. Moreover, all commands to the address where the password
is stored are disabled.
The password is all “1”s when shipped from the factory, it is only capable of programming "0"s under WRPASS
command. All 64-bit password combinations are valid as a password. No special address is required for
programming the password. The password is no longer readable after the Password Protection mode is selected by
programming Lock register bit 2 to "0".
Once sector under protected status, device will ignores the program/erase command, enable status polling and
returns to read mode without contents change. The DPB, SPB and SPB lock bit status of each sector can be
verified by issuing DPB, SPB and SPB Lock bit read commands.
● The unlock operation may fail if the password provided by password unlock command does not match the
previously entered password. It causes the same result when a programming operation is performed on a
protected sector. The P_ERR bit is set to 1 and the WIP Bit remains set.
● It is not allowed to execute the Password Unlock command faster than every 100us ± 20us. The reason behind it
is to make it impossible to hack into the system by running through all the combinations of a set of 64-bit password (58
million years). To verify if the device has completed the password unlock command and is available to process
a new password command, the Read Status Register command is needed to read the WIP bit. When a valid
password is provided the password unlock command does not insert the 100us delay before returning the WIP
bit to zero.
● It is not feasible to set the SPB Lock bit if the password is missing after the Password Mode is selected.
Password Register (PASS)
Bits
Field
Function Type
Name
63 to 0 PWD
P/N: PM1799
Description
Default State
Non-volatile OTP storage of 64 bit password. The
Hidden
password is no longer readable after the password
OTP FFFFFFFFFFFFFFFFh
Password
protection mode is selected by programming Lock
register bit 2 to zero.
70
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-32. Program/Erase Suspend/Resume
The device allow the interruption of Sector-Erase, Block-Erase or Page-Program operations and conduct other
operations.
After issue suspend command, the system can determine if the device has entered the Erase-Suspended mode
through Bit2 (PSB) and Bit3 (ESB) of security register. (please refer to "Table 8. Security Register Definition")
The latency time of erase operation :
Suspend to suspend ready timing: 20us.
Resume to another suspend timing: 1ms.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
10-33. Erase Suspend
Erase suspend allow the interruption of all erase operations. After the device has entered Erase-Suspended mode,
the system can read any sector(s) or Block(s) except those being erased by the suspended erase operation.
Reading the sector or Block being erase suspended is invalid.
After erase suspend, WEL bit will be clear, only read related, resume and reset command can be accepted. (including:
03h, 0Bh, 3Bh, 6Bh, BBh, EBh, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h, 66h, 99h,
00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
If the system issues an Erase Suspend command after the sector erase operation has already begun, the device
will not enter Erase-Suspended mode until 20us time has elapsed.
Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state
of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is
cleared to "0" after erase operation resumes.
10-34. Program Suspend
Program suspend allows the interruption of all program operations. After the device has entered ProgramSuspended mode, the system can read any sector(s) or Block(s) except those be­ing programmed by the suspended
program operation. Reading the sector or Block being program suspended is invalid.
After program suspend, WEL bit will be cleared, only read related, resume and reset command can be accepted.
(including: 03h, 0Bh, 3Bh, 6Bh, BBh, EBh, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h,
66h, 99h, 00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the
state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB
is cleared to "0" after program operation resumes.
P/N: PM1799
71
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 65. Suspend to Read Latency
CS#
Suspend Command
[B0]
Program latency : 20us
Erase latency:20us
Read Command
Figure 66. Resume to Read Latency
CS#
Resume Command
[30]
TSE/TBE/TPP
Read Command
Figure 67. Resume to Suspend Latency
CS#
P/N: PM1799
Resume Command
[30]
1ms
72
Suspend
Command
[B0]
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-35. Write-Resume
The Write operation is being resumed when Write-Resume instruction issued. ESB or PSB (suspend status bit) in
Status register will be changed back to “0”.
The operation of Write-Resume is as follows: CS# drives low → send write resume command cycle (30H) → drive
CS# high. By polling Busy Bit in status register, the internal write operation status could be checked to be completed
or not. The user may also wait the time lag of TSE, TBE, TPP for Sector-erase, Block-erase or Page-programming.
WREN (command "06") is not required to issue before resume. Resume to another suspend operation requires
latency time of 1ms.
Please note that, if "performance enhance mode" is executed during suspend operation, the device can not
be resumed. To restart the write command, disable the "performance enhance mode" is required. After the
"performance enhance mode" is disabled, the write-resume command is effective.
10-36. No Operation (NOP)
The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
during SPI mode.
10-37. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command following a Reset (RST)
command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then, which
makes the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. For details, please refer to "Table 15. AC
CHARACTERISTICS" for tREADY2.
P/N: PM1799
73
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 68. Software Reset Recovery
Stand-by Mode
66
CS#
99
tREADY2
Mode
Figure 69. Reset Sequence (SPI mode)
tSHSL
CS#
SCLK
Mode 3
Mode 3
Mode 0
Mode 0
Command
Command
99h
66h
SIO0
Figure 70. Reset Sequence (QPI mode)
TCEH
CS#
MODE 3
MODE 3
MODE 3
SCLK
MODE 0
SIO[3:0]
P/N: PM1799
Command
MODE 0
66h
Command
MODE 0
99h
74
REV. 1.2, OCT. 31, 2013
MX25L25735F
10-38. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address
bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS#
to high at any time during data out.
SFDP is a JEDEC standard, JESD216.
Figure 71. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
5Ah
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
3
2
1
0
7
MSB
MSB
P/N: PM1799
4
75
6
5
4
3
2
1
0
7
MSB
REV. 1.2, OCT. 31, 2013
MX25L25735F
Table 9. Signature and Parameter Identification Data Values
Description
SFDP Signature
Comment
Fixed: 50444653h
Add (h) DW Add
(Byte)
(Bit)
00h
07:00
Data
(h/b) note1
53h
Data
(h)
53h
01h
15:08
46h
46h
02h
23:16
44h
44h
03h
31:24
50h
50h
SFDP Minor Revision Number
Start from 00h
04h
07:00
00h
00h
SFDP Major Revision Number
Start from 01h
This number is 0-based. Therefore,
0 indicates 1 parameter header.
05h
15:08
01h
01h
06h
23:16
01h
01h
07h
31:24
FFh
FFh
00h: it indicates a JEDEC specified
header.
08h
07:00
00h
00h
Start from 00h
09h
15:08
00h
00h
Start from 01h
0Ah
23:16
01h
01h
How many DWORDs in the
Parameter table
0Bh
31:24
09h
09h
0Ch
07:00
30h
30h
0Dh
15:08
00h
00h
0Eh
23:16
00h
00h
0Fh
31:24
FFh
FFh
it indicates Macronix manufacturer
ID
10h
07:00
C2h
C2h
Start from 00h
11h
15:08
00h
00h
Start from 01h
12h
23:16
01h
01h
How many DWORDs in the
Parameter table
13h
31:24
04h
04h
14h
07:00
60h
60h
15h
15:08
00h
00h
16h
23:16
00h
00h
17h
31:24
FFh
FFh
Number of Parameter Headers
Unused
ID number (JEDEC)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of JEDEC Flash
Parameter table
Unused
ID number
(Macronix manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of Macronix Flash
Parameter table
Unused
P/N: PM1799
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REV. 1.2, OCT. 31, 2013
MX25L25735F
Table 10. Parameter Table (0): JEDEC Flash Parameter Tables
Description
Comment
Block/Sector Erase sizes
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not support 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
Write Enable Instruction Required 0: not required
1: required 00h to be written to the
for Writing to Volatile Status
status register
Registers
Add (h) DW Add
(Byte)
(Bit)
31h
(1-1-2) Fast Read (Note2)
0=not support 1=support
Address Bytes Number used in
addressing flash array
Double Transfer Rate (DTR)
Clocking
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
01:00
01b
02
1b
03
0b
30h
0: use 50h opcode,
1: use 06h opcode
Write Enable Opcode Select for
Note: If target flash status register is
Writing to Volatile Status Registers
nonvolatile, then bits 3 and 4 must
be set to 00b.
Contains 111b and can never be
Unused
changed
4KB Erase Opcode
Data
(h/b) note1
0=not support 1=support
32h
Data
(h)
E5h
04
0b
07:05
111b
15:08
20h
16
1b
18:17
10b
19
0b
20
1b
20h
F5h
(1-2-2) Fast Read
0=not support 1=support
(1-4-4) Fast Read
0=not support 1=support
21
1b
(1-1-4) Fast Read
0=not support 1=support
22
1b
23
1b
33h
31:24
FFh
37h:34h
31:00
0FFF FFFFh
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states (Note3)
Clocks) not support
(1-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits (Note4)
38h
(1-4-4) Fast Read Opcode
39h
(1-1-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Ah
(1-1-4) Fast Read Opcode
3Bh
P/N: PM1799
77
04:00
0 0100b
07:05
010b
15:08
EBh
20:16
0 1000b
23:21
000b
31:24
6Bh
FFh
44h
EBh
08h
6Bh
REV. 1.2, OCT. 31, 2013
MX25L25735F
Description
Comment
(1-1-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not supported
(1-1-2) Fast Read Number of
000b: Mode Bits not supported
Mode Bits
Add (h) DW Add
(Byte)
(Bit)
3Ch
(1-1-2) Fast Read Opcode
3Dh
(1-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not supported
(1-2-2) Fast Read Number of
000b: Mode Bits not supported
Mode Bits
3Eh
(1-2-2) Fast Read Opcode
3Fh
(2-2-2) Fast Read
0=not support 1=support
Unused
(4-4-4) Fast Read
40h
0=not support 1=support
Unused
Data
(h/b) note1
04:00
0 1000b
07:05
000b
15:08
3Bh
20:16
0 0100b
23:21
000b
31:24
BBh
00
0b
03:01
111b
04
1b
07:05
111b
Data
(h)
08h
3Bh
04h
BBh
FEh
Unused
43h:41h
31:08
FFh
FFh
Unused
45h:44h
15:00
FFh
FFh
20:16
0 0000b
23:21
000b
(2-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not supported
(2-2-2) Fast Read Number of
000b: Mode Bits not supported
Mode Bits
46h
(2-2-2) Fast Read Opcode
47h
31:24
FFh
FFh
49h:48h
15:00
FFh
FFh
20:16
0 0100b
23:21
010b
Unused
00h
(4-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not supported
(4-4-4) Fast Read Number of
000b: Mode Bits not supported
Mode Bits
4Ah
(4-4-4) Fast Read Opcode
4Bh
31:24
EBh
EBh
4Ch
07:00
0Ch
0Ch
4Dh
15:08
20h
20h
4Eh
23:16
0Fh
0Fh
4Fh
31:24
52h
52h
50h
07:00
10h
10h
51h
15:08
D8h
D8h
52h
23:16
00h
00h
53h
31:24
FFh
FFh
Sector Type 1 Size
(Note5)
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 3 erase Opcode
Sector Type 4 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 4 erase Opcode
P/N: PM1799
78
44h
REV. 1.2, OCT. 31, 2013
MX25L25735F
Table 11. Parameter Table (1): Macronix Flash Parameter Tables
Description
Comment
Add (h) DW Add
(Byte)
(Bit)
Data
(h/b) note1
Data
(h)
Vcc Supply Maximum Voltage
2000h=2.000V
2700h=2.700V
3600h=3.600V
61h:60h
07:00
15:08
00h
36h
00h
36h
Vcc Supply Minimum Voltage
1650h=1.650V
2250h=2.250V
2350h=2.350V
2700h=2.700V
63h:62h
23:16
31:24
00h
27h
00h
27h
H/W Reset# pin
0=not support 1=support
00
0b
H/W Hold# pin
0=not support 1=support
01
1b
Deep Power Down Mode
0=not support 1=support
02
1b
S/W Reset
0=not support 1=support
03
1b
S/W Reset Opcode
Reset Enable (66h) should be issued 65h:64h
before Reset Opcode
Program Suspend/Resume
0=not support 1=support
12
1b
Erase Suspend/Resume
0=not support 1=support
13
1b
14
1b
15
1b
66h
23:16
C0h
C0h
67h
31:24
64h
64h
Unused
Wrap-Around Read mode
0=not support 1=support
Wrap-Around Read mode Opcode
11:04
1001 1001b F99Eh
(99h)
Wrap-Around Read data length
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
64h:8B&16B&32B&64B
Individual block lock
0=not support 1=support
00
1b
Individual block lock bit
(Volatile/Nonvolatile)
0=Volatile 1=Nonvolatile
01
0b
09:02
1110 0001b
(E1h)
10
0b
11
1b
Individual block lock Opcode
Individual block lock Volatile
protect bit default protect status
0=protect 1=unprotect
Secured OTP
0=not support 1=support
Read Lock
0=not support 1=support
12
0b
Permanent Lock
0=not support 1=support
13
0b
Unused
15:14
11b
Unused
31:16
FFh
FFh
Unused
6Fh:6Ch [31:00]
FFh
FFh
P/N: PM1799
79
6Bh:68h
CB85h
REV. 1.2, OCT. 31, 2013
MX25L25735F
Note 1:h/b is hexadecimal or binary.
Note 2:(x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2),
and (4-4-4)
Note 3:Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4:Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller
if they are specified. (eg,read performance enhance toggling bits)
Note 5:4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h
Note 6:All unused and undefined area data is blank FFh.
P/N: PM1799
80
REV. 1.2, OCT. 31, 2013
MX25L25735F
11. POWER-ON STATE
The device is at below states when power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct
level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the flash device has no response to any command.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the "power-up timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is
recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response
to any command. The data corruption might occur during the stage while a write, program, erase cycle is in
progress.
P/N: PM1799
81
REV. 1.2, OCT. 31, 2013
MX25L25735F
12. ELECTRICAL SPECIFICATIONS
Table 12. ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient Operating Temperature
Industrial grade
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Applied Input Voltage
-0.5V to VCC+0.5V
Applied Output Voltage
-0.5V to VCC+0.5V
VCC to Ground Potential
-0.5V to 4.0V
NOTICE:
1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot to VCC+2.0V or -2.0V for period up to 20ns.
Figure 72. Maximum Negative Overshoot Waveform
20ns
Figure 73. Maximum Positive Overshoot Waveform
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
20ns
Table 13. CAPACITANCE TA = 25°C, f = 1.0 MHz
Symbol Parameter
CIN
COUT
P/N: PM1799
Min.
Typ.
Max.
Unit
Input Capacitance
6
pF
VIN = 0V
Output Capacitance
8
pF
VOUT = 0V
82
Conditions
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 74. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Input timing reference level
0.8VCC
Output timing reference level
0.7VCC
AC
Measurement
Level
0.8V
0.2VCC
0.5VCC
Note: Input pulse rise and fall time are <5ns
Figure 75. OUTPUT LOADING
25K ohm
DEVICE UNDER
TEST
CL
+3.0V
25K ohm
CL=30pF Including jig capacitance
P/N: PM1799
83
REV. 1.2, OCT. 31, 2013
MX25L25735F
Table 14. DC CHARACTERISTICS
(Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V)
Symbol Parameter
Notes
Min.
Typ.
Max.
Units Test Conditions
ILI
Input Load Current
1
±2
uA
VCC = VCC Max,
VIN = VCC or GND
ILO
Output Leakage Current
1
±2
uA
VCC = VCC Max,
VOUT = VCC or GND
ISB1
VCC Standby Current
1
12
50
uA
VIN = VCC or GND,
CS# = VCC
ISB2
Deep Power-down
Current
2
20
uA
VIN = VCC or GND,
CS# = VCC
25
mA
f=133MHz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
20
mA
f=104MHz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
15
mA
f=84MHz,
SCLK=0.1VCC/0.9VCC,
SO=Open
14
20
mA
10
12
mA
1
14
25
mA
Erase in Progress,
CS#=VCC
1
14
25
mA
Erase in Progress,
CS#=VCC
-0.5
0.8
V
0.7VCC
VCC+0.4
V
0.2
V
IOL = 100uA
V
IOH = -100uA
ICC1
VCC Read
VIL
VCC Program Current
(PP)
VCC Write Status
Register (WRSR) Current
VCC Sector/Block (32K,
64K) Erase Current
(SE/BE/BE32K)
VCC Chip Erase Current
(CE)
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
ICC2
ICC3
ICC4
ICC5
1
14
1
VCC-0.2
Program in Progress,
CS# = VCC
Program status register in
progress, CS#=VCC
Notes :
1. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
P/N: PM1799
84
REV. 1.2, OCT. 31, 2013
MX25L25735F
Table 15. AC CHARACTERISTICS
(Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V)
Symbol
fSCLK
fRSCLK
fTSCLK
Alt. Parameter
fC
fR
fT
fQ
tCH(1)
tCLH
tCL(1)
tCLL
tCLCH(2)
tCHCL(2)
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL(3)
tSHQZ
(2)
tCSS
tDSU
tDH
tCSH
tDIS
tCLQV
tV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
tHHQX(8)
tHLQZ(8)
tWHSL
tSHWL
tDP(2)
tRES1(2)
tRES2(2)
tW
tWREAW
tHO
tREADY2
tBP
tPP
tLZ
tHZ
Clock Frequency for all commands (except Read)
Clock Frequency for READ instructions
Clock Frequency for 2READ instructions
Clock Frequency for 4READ instructions
Others (fSCLK)
Clock High Time
Normal Read (fRSCLK)
Others (fSCLK)
Clock Low Time
Normal Read (fRSCLK)
Clock Rise Time (3) (peak to peak)
Clock Fall Time (3) (peak to peak)
CS# Active Setup Time (relative to SCLK)
CS# Not Active Hold Time (relative to SCLK)
Data In Setup Time
Data In Hold Time
CS# Active Hold Time (relative to SCLK)
CS# Not Active Setup Time (relative to SCLK)
Read
CS# Deselect Time
Write/Erase/Program
Output Disable Time
Loading: 30pF
Clock Low to Output Valid
Loading: 30pF/15pF
Loading: 15pF
Output Hold Time
HOLD# Setup Time (relative to SCLK)
HOLD# Hold Time (relative to SCLK)
HOLD Setup Time (relative to SCLK)
HOLD Hold Time (relative to SCLK)
HOLD to Output Low-Z
HOLD# to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
CS# High to Deep Power-down Mode
CS# High to Standby Mode without Electronic Signature Read
CS# High to Standby Mode with Electronic Signature Read
Write Status/Configuration Register Cycle Time
Write Extended Address Register
Reset Recovery Time (For Read operation)
Reset Recovery Time (For Program operation)
Reset Recovery Time (For SE/4KB Sector Erase operation)
Reset Recovery Time (For BE64K/32KB Block Erase operation)
Reset Recovery Time (For Chip Erase operation)
Reset Recovery Time (for WRSR operation)
Byte-Program
Page Program Cycle Time
tPP(5)
Page Program Cycle Time (n bytes)
tSE
tBE32
tBE
tCE
Sector Erase Cycle Time
Block Erase (32KB) Cycle Time
Block Erase (64KB) Cycle Time
Chip Erase Cycle Time
P/N: PM1799
85
Min.
D.C.
Typ.
Max.
133
50
84(7)
84(7)
3.3
7
3.3
7
0.1
0.1
3
3
2
2
3
3
7
30
40
30
1.5
1.5
ms
120
650
650
150
ms
ms
ms
s
8
8
20
100
30
300
12
25
100
MHz
MHz
MHz
MHz
ns
ns
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
us
ms
ns
us
us
ms
ms
ms
ms
us
ms
8
8
6
1
5
5
5
5
10
30
30
40
40
16
0.5
0.008+
(nx0.004) (6)
30
150
280
110
Unit
REV. 1.2, OCT. 31, 2013
MX25L25735F
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Typical values given for TA=25°C. Not 100% tested.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Test condition is shown as Figure 74 and Figure 75.
5. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to
program the whole 256 bytes or only a few bytes between 1~256 bytes.
6. “n”=how many bytes to program. In the formula, while n=1, byte program time=12us.
7. By default dummy cycle value. Please refer to the "Table 1. Read performance Comparison".
8. Value guaranteed by characterization, not 100% tested in production.
P/N: PM1799
86
REV. 1.2, OCT. 31, 2013
MX25L25735F
13. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in Figure 76 and Figure 77 are for the supply voltages and the control signals at device powerup and power-down. If the timing in the figures is ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 76. AC Timing at Device Power-Up
VCC
VCC(min)
GND
tVR
tSHSL
CS#
tSLCH
tCHSL
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
LSB IN
MSB IN
SI
High Impedance
SO
Symbol
tVR
tCLCH
Parameter
VCC Rise Time
Notes
1
Min.
20
Max.
500000
Unit
us/V
Notes :
1.Sampled, not 100% tested.
2.For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
Table 15. AC CHARACTERISTICS.
P/N: PM1799
87
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 77. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
Figure 78. Power-up Timing
VCC
VCC(max)
Chip Selection is Not Allowed
VCC(min)
tVSL
Device is fully accessible
VWI
time
P/N: PM1799
88
REV. 1.2, OCT. 31, 2013
MX25L25735F
Figure 79. Power Up/Down and Voltage Drop
For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing. Please
check the table below for more detail.
VCC
VCC (max.)
Chip Select is not allowed
VCC (min.)
tVSL
Full Device
Access
Allowed
VPWD (max.)
tPWD
Time
Table 16. Power-Up/Down Voltage and Timing
Symbol
tVSL
VWI
VPWD
tPWD
tVR
VCC
Parameter
VCC(min.) to device operation
Command Inhibit Voltage
VCC voltage needed to below VPWD for ensuring initialization will occur
The minimum duration for ensuring initialization will occur
VCC Rise Time
VCC Power Supply
Min.
800
2.3
300
20
2.7
Max.
2.5
0.9
500000
3.6
Unit
us
V
V
us
us/V
V
Note: These parameters are characterized only.
13-1.INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
P/N: PM1799
89
REV. 1.2, OCT. 31, 2013
MX25L25735F
14. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ. (1)
Min.
Max. (2)
Unit
40
ms
Write Status Register Cycle Time
Sector Erase Cycle Time (4KB)
30
120
ms
Block Erase Cycle Time (32KB)
0.15
0.65
s
Block Erase Cycle Time (64KB)
0.28
0.65
s
Chip Erase Cycle Time
110
150
s
Byte Program Time (via page program command)
16
30
us
Page Program Time
0.5
1.5
ms
Erase/Program Cycle
100,000
cycles
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and all zero pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming
command.
4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=3.3V, and 100K
cycle with 90% confidence level.
15. DATA RETENTION
Parameter
Condition
Min.
Data retention
55˚C
20
Max.
Unit
years
16. LATCH-UP CHARACTERISTICS
Min.
Max.
Input Voltage with respect to GND on all power pins, SI, CS#
-1.0V
2 VCCmax
Input Voltage with respect to GND on SO
-1.0V
VCC + 1.0V
-100mA
+100mA
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N: PM1799
90
REV. 1.2, OCT. 31, 2013
MX25L25735F
17. ORDERING INFORMATION
PART NO.
CLOCK (MHz)
TEMPERATURE
PACKAGE
MX25L25735FMI-10G
104
-40°C~85°C
16-SOP (300mil)
MX25L25735FZ2I-10G
104
-40°C~85°C
8-WSON (8x6mm)
P/N: PM1799
91
Remark
REV. 1.2, OCT. 31, 2013
MX25L25735F
18. PART NAME DESCRIPTION
MX 25
L
25735F Z2
I
10 G
OPTION:
G: RoHS Compliant & Halogen-free
SPEED:
10: 104MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M: 16-SOP (300mil)
Z2: 8-WSON (8x6mm)
DENSITY & MODE:
25735F: 256Mb
TYPE:
L: 3V
DEVICE:
25: Serial Flash
P/N: PM1799
92
REV. 1.2, OCT. 31, 2013
MX25L25735F
19. PACKAGE INFORMATION
P/N: PM1799
93
REV. 1.2, OCT. 31, 2013
MX25L25735F
P/N: PM1799
94
REV. 1.2, OCT. 31, 2013
MX25L25735F
20. REVISION HISTORY
Revision No.Description
Page
Date
1.0
1. Removed "ADVANCED INFORMATION"
P4
OCT/30/2012
2. Added Enable QPI mode related descriptionsP15
3. Modified Erase Fail bit descriptions
P59
4. Optimize ISB1 & ISB2 spec
P83
5. Corrected content error
P9,21,27-30,36,
P59,60,65,70,78
1.1
1. Added "ADD4" on "Table 5. Command Set"
2. Added USPB information
3. Added note on WP# setup
4. Added Power Up/Down and Voltage Drop information
5. Corrected content error
6. Added Hold function
1.2
P/N: PM1799
P17,19AUG/12/2013
P63,69
P38
P89
P9,73,74,82,83,85
P16,85
1. Updated parameters for DC/AC Characteristics
P84,85
OCT/31/2013
2. Updated Erase and Programming Performance
P90
3. Content correction
P63~69
4. Modified VCC to Ground Potential parameterP82
95
REV. 1.2, OCT. 31, 2013
MX25L25735F
Except for customized products which has been expressly identified in the applicable agreement, Macronix's
products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or
household applications only, and not for use in any applications which may, directly or indirectly, cause death,
personal injury, or severe property damages. In the event Macronix products are used in contradicted to their
target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its
actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or
distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2012~2013. All rights reserved, including the trademarks and
tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit,
NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,
Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names
and brands of third party referred thereto (if any) are for identification purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
96