Migrating from MX25L25635E/25735E to MX25L25635F

APPLICATION NOTE
Migrating from MX25L25635E/25735E to MX25L25635F/25735F
1. Introduction
This document highlights parameters which may require attention when migrating from the
MX25L25635E/25735E (110nm Revision “E”) to the MX25L25635F/25735F (75nm Revision “F”). The
information provided in this document is based on datasheets listed in Section 10. Newer versions of the
datasheets may override the contents of this document. A comparison of key features is provided in Table
1-1.
Table 1-1: Key Feature Comparison
Part Number
Feature
Process Technology
VCC
I/O
MX25L25635F
MX25L25735E
MX25L25735F
110nm
75nm
110nm
75nm
2.7V – 3.6V
2.7V – 3.6V
2.7V – 3.6V
2.7V – 3.6V
x1/x2/x4
x1/x2/x4
x1/x2/x4
x1/x2/x4
Normal Read
50MHz
50MHz
50MHz
50MHz
Fast Read 1x I/O
80MHz
104MHz
80MHz
104MHz
Fast Read 2x I/O
70MHz
84MHz
70MHz
84MHz
Fast Read 4x I/O
70MHz
84MHz
70MHz
84MHz
Enhanced Frequency
( x1/x2/x4: 10 dummy cycles)
-
133MHz
-
133MHz
QPI Interface
-
Yes
-
Yes
4-Byte Address Command Set
-
Yes
-
-
Yes
Yes
Yes
Yes
Read Burst Mode
-
Yes
-
Yes
Software Reset Command
-
Yes
-
Yes
Erase Suspend & Resume
-
Yes
-
Yes
Program Suspend & Resume
-
Yes
-
Yes
Flexible Dummy Cycles
-
Yes
-
Yes
Adjustable Output Driver
-
Yes
-
Yes
Fast Boot Mode
-
Yes
-
Yes
4KBit
4KBit
4KBit
4KBit
BP Protect
Top
Top/Bottom
Top
Top/Bottom
Volatile Write Protection
Yes
Yes
Yes
Yes
Non-volatile Write
Protection
-
Yes
-
Yes
Password Protection
-
Yes
-
Yes
Read
Read Enhance Mode
Security OTP
Protection
P/N: AN0200
MX25L25635E
1
REV. 1, DEC. 13, 2012
APPLICATION NOTE
Migrating from MX25L25635E/25735E to MX25L25635F/25735F
2. Package
MX25L25635F/25735F series provide 16-SOP (300mil) and 8-WSON (8x6mm) package options, which have
pin out and physical dimensions identical to the MX25L25635E/25735E (with the exception of pin #1 of the
MX25635F 16SOP where the HOLD# feature has been removed).
Table 2-1: Package Pins Comparison
16-PIN SOP (300mil)
MX25L25635E
MX25L25635F
MX25L25735E
MX25L25735F
HOLD#/SIO3
DNU/SIO3
HOLD#/SIO3
HOLD#/SIO3
VCC
VCC
VCC
VCC
RESET#
RESET#
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
CS#
CS#
CS#
CS#
SO/SIO1
SO/SIO1
SO/SIO1
SO/SIO1
MX25L25635E
MX25L25635F
MX25L25735E
MX25L25735F
CS#
CS#
CS#
CS#
SO/SIO1
SO/SIO1
SO/SIO1
SO/SIO1
WP#/SIO2
WP#/SIO2
WP#/SIO2
WP#/SIO2
GND
GND
GND
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
MX25L25635E
MX25L25635F
MX25L25735E
MX25L25735F
SCLK
SCLK
SCLK
SCLK
SI/SIO0
SI/SIO0
SI/SIO0
SI/SIO0
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
GND
GND
GND
GND
WP#/SIO2
WP#/SIO2
WP#/SIO2
WP#/SIO2
8-WSON (8x6mm)
P/N: AN0200
1
2
3
4
8
7
6
5
2
MX25L25635E
MX25L25635F
MX25L25735E
MX25L25735F
VCC
VCC
VCC
VCC
RESET#/SIO3
RESET#/SIO3
HOLD#/SIO3
HOLD#/SIO3
SCLK
SCLK
SCLK
SCLK
SI/SIO0
SI/SIO0
SI/SIO0
SI/SIO0
REV. 1, DEC. 13, 2012
APPLICATION NOTE
Migrating from MX25L25635E/25735E to MX25L25635F/25735F
3. Command Set
The core commands for read, erase, and program are unchanged between the E and F versions. For a full
list of commands and a description of their functions, please refer to each product's datasheet
Table 3-1: Command Set Comparison
Command
Symbol
READ
Read
Erase
Program
ID Read
P/N: AN0200
Description
MX25L25635E MX25L25635F MX25L25735E MX25L25735F
Normal Read (1-1-1)
03h
03h
03h
03h
FASTREAD Fast Read (1-1-1)
0Bh
0Bh
0Bh
0Bh
DREAD
Dual Output (1-1-2)
3Bh
3Bh
3Bh
3Bh
2READ
2 I/O (1-2-2)
BBh
BBh
BBh
BBh
QREAD
Quad Output (1-1-4)
6Bh
6Bh
6Bh
6Bh
4READ
4 I/O (1-4-4)
EBh
EBh
EBh
EBh
SE
Sector Erase (4KB)
20h
20h
20h
20h
BE32KB
Block Erase (32KB)
52h
52h
52h
52h
BE
Block Erase (64KB)
D8h
D8h
D8h
D8h
CE
Chip Erase
60h or C7h
60h or C7h
60h or C7h
60h or C7h
PP
Page Program
02h
02h
02h
02h
4PP
Quad Input Page Program
38h
38h
38h
38h
RDID
Read ID
9Fh
9Fh
9Fh
9Fh
RES
Read Electronic ID
ABh
ABh
ABh
ABh
REMS
Read Electronic & Mfr ID
90h
90h
90h
90h
REMS2
Read ID for 2x I/O Mode
EFh
-
EFh
-
REMS4
Read ID for 4x I/O Mode
DFh
-
DFh
-
QPIID
QPI ID Read
-
AFh
-
AFh
3
REV. 1, DEC. 13, 2012
APPLICATION NOTE
Migrating from MX25L25635E/25735E to MX25L25635F/25735F
Table 3-1: Command Set Comparison - Continued
Command
Register
Mode
Symbol
MX25L25635E MX25L25635F MX25L25735E MX25L25735F
RDSR
Read Status Register
05h
05h
05h
05h
WRSR
Write Status Register
01h
01h
01h
01h
RDSCUR Read Security Register
2Bh
2Bh
2Bh
2Bh
WRSCUR Write Security Register
2Fh
2Fh
2Fh
2Fh
RDFBR
Read Fast Boot Register
-
16h
-
16h
WRFBR
Write Fast Boot Register
-
17h
-
17h
ESFBR
Erase Fast Boot Register
-
18h
-
18h
WREN
Write Enable
06h
06h
06h
06h
WRDI
Write Disable
04h
04h
04h
04h
EQIO
Enable QPI
-
35h
-
35h
RSTQIO
Disable QPI
-
F5h
-
F5h
SBL
Set Burst Length
-
C0h
-
C0h
70h
-
70h
-
80h
-
80h
-
A3h
-
A3h
-
PGM/ERS
Suspends Program/Erase
Suspend
-
B0h
-
B0h
PGM/ERS
Resumes Program/Erase
Resume
-
30h
-
30h
NOP
No Operation
-
00h
-
00h
RSTEN
Reset Enable
-
66h
-
66h
RST
Reset Memory
-
99h
-
99h
CLSR
Clear SR Fail Flags
30h
-
30h
-
ESRY
DSRY
HPM
Reset
Description
Enable SO to output RY/
BY#
Disable SO to output RY/
BY#
High Performance Enable
Mode
The E versions use the CLSR (30h) command to clear the P_FAIL and E_FAIL flags. However, the F versions
clear these flags automatically upon successful completion of a program or erase operation.
P/N: AN0200
4
REV. 1, DEC. 13, 2012
APPLICATION NOTE
Migrating from MX25L25635E/25735E to MX25L25635F/25735F
Table 3-1: Command Set Comparison - Continued
Command
Symbol
MX25L25635E
MX25L25635F
MX25L25735E
MX25L25735F
SBLK
Single Block Lock
36h
-
36h
-
SBULK
Single Block Unlock
39h
-
39h
-
RDBLOCK Block Protect Read
3Ch
-
3Ch
-
WRLR
Write Lock Register
-
2Ch
-
2Ch
RDLR
Read Lock Register
-
2Dh
-
2Dh
-
28h
-
28h
-
27h
-
27h
WRPASS
RDPASS
Protection
Description
Write Password
Register
Read Password
Register
PASSULK
Password Unlock
-
29h
-
29h
WRSPB
SPB Bit Program
-
E3h
-
E3h
ESSPB
All SPB Bit Erase
-
E4h
-
E4h
RDSPB
Read SPB Status
-
E2h
-
E2h
SPBLK
SPB Lock Set
-
A6h
-
A6h
RDSPBLK
Read SPB Lock
Register
-
A7h
-
A7h
WRDPB
Write DPB Register
-
E1h
-
E1h
RDDPB
Read DPB Register
-
E0h
-
E0h
The command set and implementation of Individual Sector Protection Mode is has changed between the E
and F versions. Please refer to each product’s datasheet for more details.
P/N: AN0200
5
REV. 1, DEC. 13, 2012
APPLICATION NOTE
Migrating from MX25L25635E/25735E to MX25L25635F/25735F
Table 3-1: Command Set Comparison - Continued
Command
4-Byte
Mode
Symbol
Description
MX25L25635E MX25L25635F MX25L25735E MX25L25735F
EN4B
Enter 4-byte Address Mode
B7h
B7h
-
-
EX4B
Exit 4-byte Address Mode
E9h
E9h
-
-
WREAR
Write Extended Address
Register
-
C5h
-
-
RDEAR
Read Extended Address
Register
-
C8h
-
-
READ4B
Read Data Bytes Using 4
Bytes Address
-
13h
-
-
FASTREAD4B
Read Data Bytes at Higher
Speed using 4 Bytes Address
-
0Ch
-
-
DREAD4B
Dual Output Fast Read Using
4 Byte Address
-
3Ch
-
-
2READ4B
Dual Input/Output Fast Read
Using 4 Byte Address
-
BCh
-
-
QREAD4B
Quad Output Fast Read
Using 4 Byte Address
-
6Ch
-
-
Quad Input/Output Fast
Read Using 4 Byte Address
-
ECh
-
-
SE4B
Sector Erase Using 4 Byte
Address
-
21h
-
-
BE32K4B
Block Erase 32KB Using 4
Byte Address
-
5Ch
-
-
BE4B
Block Erase 64KB Using 4
Byte Address
-
DCh
-
-
PP4B
Page Program Using 4 Byte
Address
-
12h
-
-
4PP4B
Quad Page Program Using 4
Byte Address
-
3Eh
-
-
EAR
4-Byte
Command 4READ4B
Set
The MX25L25635F adds a new 4-Byte Command Set to supplement the legacy 3-Byte Command
Set. The 4-Byte Command Set operates similar to the legacy 3-Byte Command set except 4-Bytes of
address are required during the address phase. The 4-Byte Command Set is capable of addressing the
full address space of the serial flash without needing to enter 4-Byte addressing mode.
P/N: AN0200
6
REV. 1, DEC. 13, 2012
APPLICATION NOTE
Migrating from MX25L25635E/25735E to MX25L25635F/25735F
4. Write Protection
The E and F version products provide two write protection modes to easily protect sectors from inadvertent
changes. The default is Block Protection Mode, utilizing the nonvolatile Block Protection (BP) bits in the
Status Register. The BP bits specify which block groups will be protected. The second mode uses an
individual block protection method. This method utilizes a volatile SRAM lock bit assigned to each block (or
sector) and controls its protection status. The Gang Block Lock (GBLK) and Gang Block Unlock (GBULK)
commands, which set or clear all SRAM lock bits simultaneously, are identical for both E and F versions.
However, the E and F versions use different commands to control individual SRAM lock bits. In addition, the F
versions can also be protected with nonvolatile SPB (Solid Protection Bits).
4-1. Block Protection (BP) Mode
The F version has a finer granularity of block protection. Furthermore, the F version has the ability to specify
whether block protection begins at the top or bottom of memory. This is controlled by the Top/Bottom (TB) bit
in the F version’s new Configuration Register. The TB default setting is ‘0’ and specifies the top of memory.
4-2. Individual Sector Protection
Both E and F version products provide volatile individual block write protection, to easily protect sectors or
blocks against inadvertent changes, as an alternative to the grouped block protection provided by the Block
Protection (BP) bits in the Status Register. The F version has additional protection features in the Advanced
Sector Protection mode that provide higher levels of protection. These higher levels of protection include:
1. Nonvolatile individual sector/block protection.
2. A software locking mechanism to prevent modifications to the nonvolatile protection until after the next
Reset or power-up cycle.
3. A password protection option.
These additional protection features can be used to prevent accidental or deliberate data corruption in
protected memory areas. Please see the MX25L25635F or MX25L25735F datasheets for more details.
P/N: AN0200
7
REV. 1, DEC. 13, 2012
APPLICATION NOTE
5. Electrical Characteristics
The comparison of DC and AC characteristics are shown in Tables 5-1 and 5-2:
Table 5-1: DC Characteristics
DC Performance
MX25L25635E
MX25L25635F
MX25L25735E
MX25L25735F
45mA
20mA
45mA
20mA
25mA
25mA
25mA
25mA
25mA
25mA
25mA
25mA
VCC Standby Current
200uA
60uA
200uA
60uA
Deep Power Down Current
80uA
20uA
80uA
20uA
MX25L25635E
MX25L25635F
MX25L25735E
MX25L25735F
typ
60ms
43ms
60ms
43ms
max
300ms
200ms
300ms
200ms
typ
0.5s
0.19s
0.5s
0.19s
max
2s
1s
2s
1s
typ
0.7s
0.34s
0.7s
0.34s
max
2s
2s
2s
2s
typ
160s
120s
160s
120s
max
400s
300s
400s
300s
typ
9us
12us
9us
12us
max
300u
30us
300us
30us
typ
1.4ms
0.6ms
1.4ms
0.6ms
max
5ms
3ms
5ms
3ms
Write Status typ
Register
max
40ms
-
40ms
-
100ms
40ms
100ms
40ms
typ
100,000
100,000
100,000
100,000
15pf
max
12ns
6ns
12ns
6ns
30pf
max
15ns
8ns
15ns
8ns
Read (4I/O)
Active Current Erase
Program
(Note: All of the data shown in Table 5-1 are maximum values).
Table 5-2: AC Characteristics
AC Performance
4KB
32KB
Erase Time
64KB
Chip Erase
Byte
Program Time
Page
(256-Byte)
Erase/Program Cycles
tCLQV (4I/O)
P/N: AN0200
8
REV. 1, DEC. 13, 2012
APPLICATION NOTE
6. Memory Organization
The memory and sector architecture of the MX25L25635F/MX25L25735F flash are identical to the
MX25L25635E/MX25L25735E flash.
7. Device Identification
The Manufacturer ID and Device ID values of the MX25L25635F/MX25L25735F are identical to
MX25L25635E/MX25L25735E flash.
Table 7-1: Manufacturer ID & Device ID
ID item
RDID
RES
REMS
QPIID
MX25L25635E
MX25L25635F
MX25L25735E
MX25L25735F
Manufacturer ID
C2h
C2h
C2h
C2h
Type
20h
20h
20h
20h
Density
19h
19h
19h
19h
Electronic ID
18h
18h
18h
18h
Manufacturer ID
C2h
C2h
C2h
C2h
Device ID
18h
18h
18h
18h
Manufacturer ID
-
C2h
-
C2h
Type
-
20h
-
20h
Density
-
19h
-
19h
8. Part Number Cross-Reference
The part number and package information cross reference between the MX25L25635E/25735E and
MX25L25635F/25735F series is shown in Table 8-1.
Table 8-1: Part Number Cross-Reference
Density
Package
16SOP (300mil)
256Mb
8WSON (8x6mm)
P/N: AN0200
E Revision
F Revision
MX25L25635EMI-12G
MX25L25635FMI-10G
MX25L25735EMI-12G
MX25L25735FMI-10G
MX25L25635EZNI-12G
MX25L25635FZ2I-10G
MX25L25735EZNI-12G
MX25L25735FZ2I-10G
9
REV. 1, DEC. 13, 2012
APPLICATION NOTE
9. Summary
The MX25L25635F/735F is backwards compatible with most of the common commands and features of the
earlier E versions. Additionally, the supported package types have identical footprints and nearly identical
pinout definitions. The following is a summary of the differences to consider when migrating from the
MX25L25635E/25735E to the MX25L25635F/25735F:
•
•
•
•
Block Protection Mode has finer granularity in the F version.
Individual Sector Protection has a different implementation and command set in the F version.
The method of clearing the E_FAIL and P_FAIL flags is different in the F version.
The Security Register bit assignments have changed.
A more detailed analysis should be done if “special” functions such as write protection are used. If common
features are utilized in standard and basic modes, then the migration may only need minimal software
modification, if any at all, to accommodate differences between the E and F versions.
10.Reference Documents
Table 9-1 shows the datasheet versions used for comparison in this application note. For the most current
Macronix specification, please refer to the Macronix Website at http://www.macronix.com
Table 9-1: Datasheet Version
Datasheet
Location
Date Issued
Versions
MX25L25635E
Macronix Website
Feb.10,2012
Rev. 1.3
MX25L25635F
Macronix Website
Oct.30,2012
Rev 1.0
Mx25L25735E
Macronix Website
Feb.10,2012
Rev. 1.2
MX25L25735F
Macronix Website
Oct.30,2012
Rev 1.0
11.Revision History
Table 10-1: Revision History
Revision No.
REV. 1
P/N: AN0200
Description
Initial Release
10
Page
Date
ALL
DEC. 13, 2012
REV. 1, DEC. 13, 2012
APPLICATION NOTE
Except for customized products which have been expressly identified in the applicable agreement, Macronix's products
are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe
property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall
take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable
laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2012. All rights reserved, including the trademarks and tradename thereof,
such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE,
Macronix MAP, Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if
any) are for identification purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
P/N: AN0200
11
REV. 1, DEC. 13, 2012