IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G ™ "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& ) , R , ? >=1G, & P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C ( & I9 P ' 3 81>>5< >? A=1<<5E5< P E1<1>3 85 A1C54 )# J +&/ Y" 1( 6 @A5E9? DB5>79>55A9 >7 B1=@<5 3 ? 45B ?EE(,cC(.C ?E?(,cC(.C ?E7(,cC(.C P. 5AH <? F ? >A5B9BC1>3 5 R 9H"[Z# P * D1<96954 13 3 ? A49>7 C? $ .( 6? AC1A75C1@@<9 3 1C9? >B P) 2 6A55 @<1C9>7 + ? " , 3 ? =@<91>C P" 1<? 75>6A55 13 3 ? A49 >7 C? # Type #) ' ' ! #) # ' ' ! #) ) ' ' ! Package E=%ID*.+%+ E=%ID*.*%+ E=%ID**(%+ Marking (+/C(.C (,(C(.C (,(C(.C Maximum ratings, 1CT V S D><5BB? C85AF9B5 B@53 9 6954 Parameter Symbol Conditions ? >C9>D? DB4A19> 3 DAA5>C I9 T 8 S *# Value 1( T 8 S 1( Unit 6 ) D<B54 4A19> 3 DAA5>C+# I 9$\`X^Q T 8 S +.( E1<1>3 85 5>5A7H B9 >7<5 @D<B5 E 6H I 9 R =H " ).- Y@ !1C5 B? DA3 5 E? <C175 V =H p*( J ) ? F5A49BB9@1C9? > P _[_ )00 K ( @5A1C9>7 1>4 BC? A175 C5=@5A1CDA5 T V T ^_S S T 8 S # 3 <9=1C93 3 1C57? AH #' # )# *# $ , - 1>4 $ , DAA5>C9B<9=9C54 2 H 2 ? >4F9A5 F9C8 1>R _T@8 % / C85 3 89 @ 9B12 <5 C? 3 1AAH +# , 55 69SDA5 5E935 ? > == G == G == 5@? GH ) 3 ? >>53 C9? > ) 9BE5AC931<9> BC9<<19A ,# + 5E + F9C8 3 =* ? >5 <1H5A V = C893; 3 ? @@5A1A51 6? A4A19> @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Values Symbol Conditions Unit min. typ. max. % % (&0 =9>9 =1<6? ? C@A9>C 3 =U 3 ? ? <9>7 1A51 ,# % % ,( .( % % Thermal characteristics -85A=1<A5B9 BC1>3 5 :D>3 C9 ? > 3 1B5 R _T@8 -85A=1<A5B9 BC1>3 5 R _T@6 :D>3 C9? > 1=2 9 5>C A'K Electrical characteristics, 1CT V S D><5BB? C85AF9B5 B@53 96954 Static characteristics A19>B? DA3 5 2 A51;4? F> E? <C175 V "7G#9HH V =H . I 9 = !1C5 C8A5B8? <4 E? <C175 V =H"_T# V 9H4V =H I 9 V * + , 05A? 71C5 E? <C175 4A19> 3 DAA5>C I 9HH V 9H . V =H . T V S % (&) ) V 9H . V =H . T V S % )( )(( J r6 !1C5B? DA3 5 <51;175 3 DAA5>C I =HH V =H . V 9H . % ) )(( Z6 A19>B? DA3 5 ? >BC1C5 A5B9BC1>3 5 R 9H"[Z# V =H . I 9 % +&+ , Y" V =H . I 9 "HB9# % +&( +&/ % )&+ % " .) )*) % H !1C5 A5B9BC1>3 5 R= I]MZ^O[ZP`O_MZOQ g R^ + 5E fV 9Hf5*fI 9fR 9H"[Z#YMc I 9 @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Values Symbol Conditions Unit min. typ. max. % 0((( ))((( \< % )/(( *+(( Dynamic characteristics #>@DC3 1@13 9C1>3 5 C U^^ ( DC@DC3 1@13 9 C1>3 5 C [^^ + 5E5AB5 CA1>B65A3 1@13 9C1>3 5 C ]^^ % -0 0/ -DA>? > 45<1H C9=5 t P"[Z# % +( % + 9B5 C9 =5 t] % /( % -DA>? 6645<1H C9=5 t P"[RR# % ,( % tR % - % !1C5 C? B? DA3 5 3 81A75 Q S^ % ,* % !1C5 C? 4A19> 3 81A75 Q SP % 1 % % */ % 1<<C9 =5 V =H . V 9H . f & " I V 99 . V =H . I 9 R = " Z^ !1C5 81AS5 81A13 C5A9 BC93B-# V 99 . I 9 V =H C? . Z8 , F9C3 89 >7 3 81A75 Q ^b !1C5 3 81A75 C? C1< QS % 10 % !1C5 @<1C51D E? <C175 V \XM_QM` % -&+ % J ( DC@DC3 81A75 Q [^^ % /1 % Z8 % % 1( % % +.( % (&1/ )&* J % )*- % Z^ % ))( % Z8 V 99 . V =H . Reverse Diode 9? 45 3 ? >C9>? DB6? AF1A4 3 DAA5>C IH 9? 45 @D<B5 3 DAA5>C I H$\`X^Q 9? 45 6? AF1A4 E? <C175 V H9 + 5E5AB5 A53 ? E5AH C9 =5 t ]] + 5E5AB5 A53 ? E5AH 3 81A75 Q ]] -# + 5E 6 T 8 S V =H . I < T V S V G . #< Pi <'Pt V B , 55 697DA5 6? A71C5 3 81A75 @1A1=5C5A4569>9C9? > @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 1 Power dissipation 2 Drain current P _[_4R"T 8# I 94R"T 8 V =H" . 100 160 80 120 60 I D [A] P tot [W] 200 80 40 40 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I 94R"V 9H T 8 S D 4( Z _T@84R"t \# @1A1=5C5A t \ @1A1=5C5A D 4t \'T 103 100 <9=9C54 2 H? >BC1C5 ]Q^U^_MZOQ VB VB 10 200 (&- 2 V B (&* =B 98 10 Z thJC [K/W] I D [A] =B 1 (&) 10-1 (&((&(* (&() B9>7<5 @D<B5 100 10 -1 10 10 -1 10 0 10 1 10 2 V DS [V] + 5E -2 10-5 10-4 10-3 10-2 10-1 100 t p [s] @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94R"V 9H T V S R 9H"[Z#4R"I 9 T V S @1A1=5C5A V =H @1A1=5C5A V =H 15 320 . . . . . . . 12 R DS(on) [m ] 240 I D [A] . 160 9 6 . . . . . 80 3 . . . 0 0 0 1 2 3 4 0 5 50 V DS [V] 100 150 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =H JV 9Hf5*fI 9fR 9H"[Z#YMc g R^4R"I 9 T V S @1A1=5C5A T V 320 200 160 240 g fs [S] I D [A] 120 160 80 S 80 40 S 0 0 0 2 4 6 0 + 5E 50 I D [A] V GS [V] @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"[Z#4R"T V I 9 V =H . V =H"_T#4R"T V V =H4V 9H 8 4 7 3.5 6 3 5 V V 2.5 10! V GS(th) [V] R DS(on) [m ] @1A1=5C5A I 9 4 )(J 2 3 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4R"V 9H V =H . f & " I I <4R"V H9# @1A1=5C5A T V 104 103 8U^^ 8[^^ S 102 S S I F [A] C [pF] 103 S 102 101 8]^^ 101 100 0 20 40 60 V DS [V] + 5E 0 0.5 1 1.5 2 V SD [V] @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 13 Avalanche characteristics 14 Typ. gate charge I 6H4R"t 6J R =H " V =H4R"Q SM_Q I 9 @D<B54 @1A1=5C5A T V"^_M]_# @1A1=5C5A V 99 100 12 S . 10 S . . 8 V GS [V] I AS [A] S 10 6 4 2 1 0 1 10 100 1000 0 20 40 60 80 100 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 7G"9HH#4R"T V I 9 = 70 V =H Qg V BR(DSS) [V] 65 60 V S ^"_T# 55 Q S "_T# Q ^b Q S^ 50 -60 -20 20 60 100 140 Q g ate Q SP 180 T j [°C] + 5E @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO220-3 + 5E @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO262-3 (I²-Pak) + 5E @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO263 (D²-Pak) + 5E @175 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. + 5E @175