^
BSZ900N15NS3 G
TM
"%&$!"# 3 Power-Transistor
Product Summary
Package
BM]WUZS
P ' 3 81>>5< >? A=1<<5E5<
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1(
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P" 1<? 75>6A55 13 3 ? A49
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Package
Marking
, 0 ' ' , !
E=%IH9HDC%0
1((C)-C
Maximum ratings, 1CT V S D><5BB? C85AF9B5 B@53 9
6954
Parameter
Symbol Conditions
? >C9>D? DB4A19> 3 DAA5>C
I9
Value
T 8 S
)+
T 8 S
0
Unit
6
) D<B54 4A19> 3 DAA5>C*#
I 9$\`X^Q
T 8 S
-*
E1<1>3 85 5>5A7H B9
>7<5 @D<B5
E 6H
I 9 R =H "
+(
Y@
!1C5 B? DA3 5 E? <C175
V =H
p*(
J
) ? F5A49BB9@1C9? >
P _[_
+0
K
( @5A1C9>7 1>4 BC? A175 C5=@5A1CDA5
T V T ^_S
S
T 8 S
# 3 <9=1C93 3 1C57? AH #' # )#
*#
$ , - 1>4 $ , 5E935 ? > == G == G == 5@? GH ) 3 ? >>53 C9? >
) 9BE5AC931<9> BC9<<19A
+ 5E
+ F9C8 3 =* ? >5 <1H5A U = C893; 3 ? @@5A1A51 6? A4A19>
@175 BSZ900N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
+&+
%
%
.(
)-(
%
%
Thermal characteristics
-85A=1<A5B9
BC1>3 5 :D>3 C9
? > 3 1B5
R _T@8
-85A=1<A5B9
BC1>3 5
:D>3 C9? > 1=2 9
5>C
R _T@6
3 = * 3 ? ? <9
>7 1A51+#
A'K
Electrical characteristics, 1CT V S D><5BB? C85AF9B5 B@53 96954
Static characteristics
A19>B? DA3 5 2 A51;4? F> E? <C175
V "7G#9HH V =H . I 9 =
!1C5 C8A5B8? <4 E? <C175
V =H"_T#
V 9H4V =H I 9 U *
+
,
05A? 71C5 E? <C175 4A19> 3 DAA5>C
I 9HH
V 9H . V =H . T V S
%
(&()
)
V 9H . V =H . T V S
%
)(
)((
J
q6
!1C5B? DA3 5 <51;175 3 DAA5>C
I =HH
V =H . V 9H .
%
)
)((
Z6
A19>B? DA3 5 ? >BC1C5 A5B9BC1>3 5
R 9H"[Z#
V =H . I 9 %
/,
1(
Y"
V =H . I 9 %
/-
1)
%
)&/
%
"
.
)*
%
H
!1C5 A5B9BC1>3 5
R=
I]MZ^O[ZP`O_MZOQ
g R^
+#
+ 5E
fV 9Hf5*fI 9fR 9H"[Z#YMc
I 9 B55 697DA5 @175 BSZ900N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
+0(
-)(
%
,.
.)
Dynamic characteristics
#>@DC3 1@13 9C1>3 5
C U^^
V =H . V 9H . f & " I
( DC@DC3 1@13 9
C1>3 5
C [^^
+ 5E5AB5 CA1>B65A3 1@13 9C1>3 5
C ]^^
%
+
%
-DA>? > 45<1H C9=5
t P"[Z#
%
,
%
+ 9B5 C9
=5
t]
%
,
%
-DA>? 6645<1H C9=5
t P"[RR#
%
0
%
tR
%
+
%
!1C5 C? B? DA3 5 3 81A75
Q S^
%
)&1
%
!1C5 C? 4A19> 3 81A75
Q SP
%
(&1
%
%
)&/
%
1<<C9
=5
V 99 . V =H . I 9 R = "
\<
Z^
!1C5 81AS5 81A13 C5A9
BC93B,#
V 99 . I 9 V =H C? .
Z8
, F9C3 89
>7 3 81A75
Q ^b
!1C5 3 81A75 C? C1<
QS
%
-&(
/
!1C5 @<1C51D E? <C175
V \XM_QM`
%
-&*
%
( DC@DC3 81A75
Q [^^
%
)*
)/
Z8
%
%
)+
6
%
%
-*
%
(&1
)&*
%
-1
%
)*+
V 99 . V =H .
J
Reverse Diode
9? 45 3 ? >C9>? DB6? AF1A4 3 DAA5>C
IH
9? 45 @D<B5 3 DAA5>C
I H$\`X^Q
9? 45 6? AF1A4 E? <C175
V H9
+ 5E5AB5 A53 ? E5AH C9
=5
t ]]
+ 5E5AB5 A53 ? E5AH 3 81A75
Q ]]
,#
+ 5E
T 8 S
V =H . I < T V S
V G . I <45 A Pi <'Pt U B
J
Z^
%
Z8
, 55 697DA5 6? A71C5 3 81A75 @1A1=5C5A4569>9C9? >
@175 BSZ900N15NS3 G
1 Power dissipation
2 Drain current
P _[_4R"T 8#
I 94R"T 8 V =H" .
40
15
35
30
10
I D [A]
P tot [W]
25
20
15
5
10
5
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 S D 4(
Z _T@84R"t \#
@1A1=5C5A t \
@1A1=5C5A D 4t \'T
102
101
UB
UB
101
(&-
Z thJC [K/W]
U B
I D [A]
=B
100
(&)
98
100
(&*
(&((&(*
(&()
B9>7<5 @D<B5
10-1
10-1
10-1
100
101
102
103
V DS [V]
+ 5E
t p [s]
@175 BSZ900N15NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V S
R 9H"[Z#4R"I 9 T V S
@1A1=5C5A V =H
@1A1=5C5A V =H
30
150
140
.
130
25
.
.
120
.
110
.
100
90
R DS(on) [m ]
I D [A]
20
15
.
.
80
.
70
60
10
50
40
.
30
5
20
.
10
.
0
0
0
1
2
3
0
4
8
V DS [V]
12
16
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H JV 9Hf5*fI 9fR 9H"[Z#YMc
g R^4R"I 9 T V S
@1A1=5C5A T V
28
20
24
15
20
I D [A]
g fs [S]
16
12
10
8
5
4
S
S
0
0
0
2
4
6
8
+ 5E
0
10
20
30
I D [A]
V GS [V]
@175 BSZ900N15NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9 V =H .
V =H"_T#4R"T V V =H4V 9H
@1A1=5C5A I 9
200
4
180
3.5
160
U
3
U 2.5
120
V GS(th) [V]
R DS(on) [m ]
140
100
_d\
80
2
1.5
60
1
40
0.5
20
0
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4R"V 9H V =H . f & " I
I <4R"V H9#
@1A1=5C5A T V
103
100
8U^^
102
S
S I F [A]
C [pF]
8[^^
S
10
101
S 8]^^
100
1
0
20
40
60
80
100
V DS [V]
+ 5E
0
0.5
1
1.5
2
V SD [V]
@175 BSZ900N15NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM_Q I 9 @D<B54
@1A1=5C5A T V"^_M]_#
@1A1=5C5A V 99
100
10
.
8
.
.
V GS [V]
I AS [A]
6
10
4
S
S
2
S
1
0
1
10
100
1000
0
2
4
6
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7G"9HH#4R"T V I 9 =
170
V =H
Qg
165
V BR(DSS) [V]
160
155
150
V S ^"_T#
145
Q S "_T#
140
Q ^b
Q S^
135
-60
-20
20
60
100
140
Q g ate
Q SP
180
T j [°C]
+ 5E
@175 BSZ900N15NS3 G
Package Outline: PG-TDSON-8
+ 5E
@175 BSZ900N15NS3 G
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$ + -02- %%$ " 2
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$ + (%$ 13 ..-02# $ 4(" $ 1 -01712
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' $ ' 3 + , !-# 7 -02
- 13 ..-02 ,# -0+ (,2 (, ,# 13 12 (,
+ 5E
@175