Power Matters. Overview & Resources Silicon Carbide Semiconductor Products Microsemi Corporation has a full silicon carbide (SiC) wafer fab at its Bend, Oregon site. This facility has a For more information contact: 25-year history of innovation and manufacturing of high- SiC Discrete Products voltage high-frequency power semiconductors and is Microsemi Corporation ISO 9001 and JANS certified. 405 SW Columbia Street In addition to producing discrete SiC semiconductors, USA Bend, Oregon 97701 Microsemi has developed a variety of SiC and mixed +1-541-382-8028 semiconductor power modules. These modules, incorporating the latest in available technologies, offer SiC Module Products rugged operation as well as high efficiency. Microsemi Corporation Microsemi has a wide ranging interest in partnering 33520 Bruges, France 26, Rue Campilleau with customers to provide the best SiC solution for a +33-557-921-515 specific application. Extreme Environment Products F U L L I N - H O U S E C A PA B I L I T I E S Discrete Products Microsemi Corporation 6 Lake Street Low Switching Losses Lawrence, Massachusetts 01841 Design +1-978-620-2600 • Silvaco Design and Process Simulator Discrete Products •TCAD-TMA • Mask-Making and Layout High Power Density Corporate Office Microsemi Corporation High Thermal Conductivity One Enterprise • Solid Works & FEA Aliso Viejo, CA 92656 Process Reduced Heat Sink Requirements +1-949-380-6100 • High-Temperature Ion Implantation High Temperature Operation [email protected] • High-Temperature Annealing www.microsemi.com • SiC MOSFET Gate Oxide Reduced Circuit Size and System Costs • ASML Steppers • RIE and Plasma Etching Released Products • Sputtered and Evaporated Metal Deposition Future Products Analytical and Support • Atomic Force Microscope 600 Volt • • • n-Spec Defect DetectionBarrier 150°C Rated Schottky •SEM/EDAX Diodes: 10A, 20A, 30A • Sonoscan X-ray 150°C Ratedand Schottky Barrier Diodes: 10A, 20A, 30A 175°C Rated Schottky Barrier 1700V-175° C Rated Schottky Barrier Diodes: 10A, 20A Released Products • 175°C Rated Schottky Barrier Reliability Testing & Screening Diodes: 10A, 20A, 30A 1200 Volt • Wafer Level HTRB/HTGB • • • Thermal Imaging • HTRB, HTGB, TC, PC, HTOL and 85/85 • 2013 2014 1200V-175°C Rated Schottky Barrier Diode: 50A 600 Volt james.kerr 4/22/13 11:21 AM Deleted: james.kerr 4/22/13 11:21 Deleted: Future Products Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 AM Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: [email protected] PM www.microsemi.com 2013 james.kerr 4/22/13 12:00 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information james.kerr 4/22/13 provided by Microsemi hereunder is provided “as is, where is” and with11:21 all faults, AM and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself Deleted: or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. • 1700V-175° C Rated Schottky 150°C Rated Schottky Barrier Formatted: Font:12 pt ©2016 Microsemi Corporation. All rights reserved. • 1200V-175°C Rated MOSFET Barrier Diodes: 10A, 20A Microsemi and the Microsemi logo are registered Diodes: 10A, 20A, 30A james.kerr 4/22/13 11:27 AM trademarks of Microsemi Corporation. All other • o 80 milliohm Rdson Formatted: No bullets or numbering trademarks and service marks are the property of their respective owners. • james.kerr 4/22/13 11:59 AM 175°C Rated Schottky Barrier Formatted: Font:12 pt, English (US) o Diodes: 160 milliohm Rdson 10A, 20A, 30A james.kerr 4/22/13 11:59 AM • 1200V-175°C Rated Schottky Barrier Diode: 50A SiC 04/16 james.kerr 4/22/13 11:21 AM Power Matters. Overview & Resources Silicon Carbide Semiconductor Products Microsemi Corporation has a full silicon carbide (SiC) wafer fab at its Bend, Oregon site. This facility has a For more information contact: 25-year history of innovation and manufacturing of high- SiC Discrete Products voltage high-frequency power semiconductors and is Microsemi Corporation ISO 9001 and JANS certified. 405 SW Columbia Street In addition to producing discrete SiC semiconductors, USA Bend, Oregon 97701 Microsemi has developed a variety of SiC and mixed +1-541-382-8028 semiconductor power modules. These modules, incorporating the latest in available technologies, offer SiC Module Products rugged operation as well as high efficiency. Microsemi Corporation Microsemi has a wide ranging interest in partnering 33520 Bruges, France 26, Rue Campilleau with customers to provide the best SiC solution for a +33-557-921-515 specific application. Extreme Environment Products F U L L I N - H O U S E C A PA B I L I T I E S Discrete Products Microsemi Corporation 6 Lake Street Low Switching Losses Lawrence, Massachusetts 01841 Design +1-978-620-2600 • Silvaco Design and Process Simulator Discrete Products •TCAD-TMA • Mask-Making and Layout High Power Density Corporate Office Microsemi Corporation High Thermal Conductivity One Enterprise • Solid Works & FEA Aliso Viejo, CA 92656 Process Reduced Heat Sink Requirements +1-949-380-6100 • High-Temperature Ion Implantation High Temperature Operation [email protected] • High-Temperature Annealing www.microsemi.com • SiC MOSFET Gate Oxide Reduced Circuit Size and System Costs • ASML Steppers • RIE and Plasma Etching Released Products • Sputtered and Evaporated Metal Deposition Future Products Analytical and Support • Atomic Force Microscope 600 Volt • • • n-Spec Defect DetectionBarrier 150°C Rated Schottky •SEM/EDAX Diodes: 10A, 20A, 30A • Sonoscan X-ray 150°C Ratedand Schottky Barrier Diodes: 10A, 20A, 30A 175°C Rated Schottky Barrier 1700V-175° C Rated Schottky Barrier Diodes: 10A, 20A Released Products • 175°C Rated Schottky Barrier Reliability Testing & Screening Diodes: 10A, 20A, 30A 1200 Volt • Wafer Level HTRB/HTGB • • • Thermal Imaging • HTRB, HTGB, TC, PC, HTOL and 85/85 • 2013 2014 1200V-175°C Rated Schottky Barrier Diode: 50A 600 Volt james.kerr 4/22/13 11:21 AM Deleted: james.kerr 4/22/13 11:21 Deleted: Future Products Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 AM Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: [email protected] PM www.microsemi.com 2013 james.kerr 4/22/13 12:00 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information james.kerr 4/22/13 provided by Microsemi hereunder is provided “as is, where is” and with11:21 all faults, AM and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself Deleted: or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. • 1700V-175° C Rated Schottky 150°C Rated Schottky Barrier Formatted: Font:12 pt ©2016 Microsemi Corporation. All rights reserved. • 1200V-175°C Rated MOSFET Barrier Diodes: 10A, 20A Microsemi and the Microsemi logo are registered Diodes: 10A, 20A, 30A james.kerr 4/22/13 11:27 AM trademarks of Microsemi Corporation. All other • o 80 milliohm Rdson Formatted: No bullets or numbering trademarks and service marks are the property of their respective owners. • james.kerr 4/22/13 11:59 AM 175°C Rated Schottky Barrier Formatted: Font:12 pt, English (US) o Diodes: 160 milliohm Rdson 10A, 20A, 30A james.kerr 4/22/13 11:59 AM • 1200V-175°C Rated Schottky Barrier Diode: 50A SiC 04/16 james.kerr 4/22/13 11:21 AM The Power of Silicon Carbide Semiconductors Power Modules Discrete Products Breakthrough Technology Combines High Performance & Low Losses SiC Power Module Advantages Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to • • • • High speed switching Low switching losses Low input capacitance Low drive requirements • • • • SIC SCHOTTKY DIODES Low profile Minimum parasitic inductance Lower system cost Increased reliability Volts SINGLE 1700 improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, mil-aerospace and communication market segments. Microsemi is proud to be at the forefront of this game changing technology with a comprehensive portfolio of SiC solutions and in-house fabrication capabilities. EXTREMELY LOW SWITCHING LOSSES Reduction in Losses • Zero reverse recovery charge improves system efficiency Model Inverter HIGH POWER DENSITY • Smaller footprint device reduces system size and weight All SiC Solution = 70% Reduction in Losses SiC Switch + SiC SBD HIGH THERMAL CONDUCTIVITY • 2.5x more thermally conductive than silicon Switching Losses IGBT+SiC SBD Conduction Losses REDUCED SINK REQUIREMENTS • Results in lower cost and smaller size IGBT + Si FWD HIGH TEMPERATURE OPERATION • Increased power density and improved reliability 0 20 40 60 80 100 AUTOMOTIVE INDUSTRIAL AVIATION DEFENSE MEDICAL S TA N D A R D M O D U L E S P/N APT2X30DC60J APT2X40DC60J APT2X60DC60J APT2X20DC120J APT2X50DC120J APT40DC60HJ APTDC40H601G APT20DC120HJ APTDC20H1201G APT40DC120HJ APTSM70TAM60CT3AG APTSM120TA10CT3AG APT50SM70JCU2 APT30SM120JCU2 APT100MC120JCU2 APTSM70HM30CT3AG APTSM120HM50CT3AG APTMC120HM17CT3AG APTSM70AM30CT1AG APTSM70AM15CT3AG APTSM70AM05CT6AG APTMC120AM55CT1AG APTSM120AM55CT1AG APTMC120AM25CT3AG APTMC120AM20CT1AG APTSM120AM25CT3AG APTMC120AM12CT3AG APTMC120AM08CD3AG APTMC120AM09CT3AG APTSM120AM08CT6AG APTMC170AM60CT1AG APTMC170AM30CT1AG APTMC60TL11CT3AG APTMC60TLM55CT3AG APTMC60TLM14CAG APTMC120HRM40CT3AG APTSM70TAM20CTPAG APTSM120TAM33CTPAG APTMC120TAM17CTPAG APTMC120TAM12CTPAG Type Electrical Topology Voltage (V) 600 Dual diode 1200 Diode module 600 Full bridge 1200 3 phase bridge Boost chopper 700 1200 700 1200 700 Full bridge 1200 700 Mosfet Module Phase leg 1200 1700 600 Three level inverter 1200 700 Triple Phase leg 1200 Current (A) Package Type 30 40 60 20 50 40 40 20 20 40 49 30 49 30 100 97 59 110 97 194 480 40 59 80 100 118 150 185 200 293 40 80 20 40 160 50 146 89 100 150 SOT227 SOT227 SOT227 SOT227 SOT227 SOT227 SP1 SOT227 SP1 SOT227 SP3F SP3F SOT227 SOT227 SOT227 SP3F SP3F SP3F SP1 SP3F SP6 SP1 SP1 SP3F SP1 SP3F SP3F D3 SP3F SP6 SP1 SP1 SP3F SP3F SP6 SP3F SP6P SP6P SP6P SP6P 1200 650 DUAL 1200 IF (avg) Amps VFvolts Typ 25° C Diode Series Part Number Package Style 10 10 10 20 20 30 30 10 20 30 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 SCE SCD SCD SCD SCD SCD SCD SCD SCD SCD APT10SCE170B APT10SCD120B APT10SCD120K APT20SCD120B APT20SCD120S APT30SCD120B APT30SCD120S APT10SCD65K APT20SCD65K APT30SCD65B TO-247 TO-247 TO-220 TO-247 D3 TO-247 D3 TO-220 TO-220 TO-247 2 x 10 1.5 SCD APT10SCD120BCT TO-247 SILICON CARBIDE (SIC) MOSFETS BV(DSS) Volts RDS(ON) Ohms ID(Cont) Amps Part Number Package Style 0.100 35 APT35SM70B TO-247 0.100 35 APT35SM70S D3 0.053 70 APT70SM70B TO-247 0.053 70 APT70SM70S D3 ISOTOP® 700V 1200V 1700V 0.053 70 APT70SM70J 0.033 130 APT130SM70B TO-247 0.033 130 APT130SM70J ISOTOP® 0.140 25 APT25SM120B TO-247 0.140 25 APT25SM120S D3 0.080 40 APT40SM120B TO-247 0.080 40 APT40SM120S D3 0.080 40 APT40SM120J ISOTOP® 0.040 80 APT80SM120B TO-247 0.040 80 APT80SM120S D3 0.040 80 APT80SM120J ISOTOP® 0.800 5 APT5SM170B TO-247 0.800 5 APT5SM170S D3 Microsemi Patented Technology. Manufactured in Bend, Oregon USA SiC is the perfect technology to address high frequency and high power density applications Lower Power Losses Higher frequency cap. Higher junction temp. SIC MOSFETS Optional Materials: • AlN substrate • Si3N4 Substrate • AlSiC base plate material • Temperature sensor • Press fit terminals (for SP3 package) Characteristics C U S T O M I Z AT I O N Microsemi offers a complete engineering solution with mix and match capabilities in terms of package, interconnection, configuration, performance and cost. Out of the existing standard power modules product line, Microsemi can offer simple, modified or fully customized parts to meet 100% of our customers’ needs. • • • • • • Design expertise High power density Low profile packages Extended temperature capabilities Pin locating flexibility Mix of Silicon Easier cooling Downsized system Higher Reliability SiC vs. Si Results Benefits Breakdown field (MV/cm) 10x Higher Lower On-Resistance Higher efficiency Electron sat. velocity (cm/s) 2x Higher Faster switching Size reduction Bandgap energy (ev) 3x Higher Higher Junction Temperature Improved cooling Thermal conductivity (W/m.K) 3x Higher Higher power density Higher current capabilities Positive Temperature coefficient – Self regulation Easy paralleling Microsemi Advantages vs. Competition • Lowest Conduction Losses at High Temperature • Low Switching Losses • Highest Short Circuit Withstand Rating • Lowest Gate Resistance • Patented SiC Technology The Power of Silicon Carbide Semiconductors Power Modules Discrete Products Breakthrough Technology Combines High Performance & Low Losses SiC Power Module Advantages Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to • • • • High speed switching Low switching losses Low input capacitance Low drive requirements • • • • SIC SCHOTTKY DIODES Low profile Minimum parasitic inductance Lower system cost Increased reliability Volts SINGLE 1700 improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, mil-aerospace and communication market segments. Microsemi is proud to be at the forefront of this game changing technology with a comprehensive portfolio of SiC solutions and in-house fabrication capabilities. EXTREMELY LOW SWITCHING LOSSES Reduction in Losses • Zero reverse recovery charge improves system efficiency Model Inverter HIGH POWER DENSITY • Smaller footprint device reduces system size and weight All SiC Solution = 70% Reduction in Losses SiC Switch + SiC SBD HIGH THERMAL CONDUCTIVITY • 2.5x more thermally conductive than silicon Switching Losses IGBT+SiC SBD Conduction Losses REDUCED SINK REQUIREMENTS • Results in lower cost and smaller size IGBT + Si FWD HIGH TEMPERATURE OPERATION • Increased power density and improved reliability 0 20 40 60 80 100 AUTOMOTIVE INDUSTRIAL AVIATION DEFENSE MEDICAL S TA N D A R D M O D U L E S P/N APT2X30DC60J APT2X40DC60J APT2X60DC60J APT2X20DC120J APT2X50DC120J APT40DC60HJ APTDC40H601G APT20DC120HJ APTDC20H1201G APT40DC120HJ APTSM70TAM60CT3AG APTSM120TA10CT3AG APT50SM70JCU2 APT30SM120JCU2 APT100MC120JCU2 APTSM70HM30CT3AG APTSM120HM50CT3AG APTMC120HM17CT3AG APTSM70AM30CT1AG APTSM70AM15CT3AG APTSM70AM05CT6AG APTMC120AM55CT1AG APTSM120AM55CT1AG APTMC120AM25CT3AG APTMC120AM20CT1AG APTSM120AM25CT3AG APTMC120AM12CT3AG APTMC120AM08CD3AG APTMC120AM09CT3AG APTSM120AM08CT6AG APTMC170AM60CT1AG APTMC170AM30CT1AG APTMC60TL11CT3AG APTMC60TLM55CT3AG APTMC60TLM14CAG APTMC120HRM40CT3AG APTSM70TAM20CTPAG APTSM120TAM33CTPAG APTMC120TAM17CTPAG APTMC120TAM12CTPAG Type Electrical Topology Voltage (V) 600 Dual diode 1200 Diode module 600 Full bridge 1200 3 phase bridge Boost chopper 700 1200 700 1200 700 Full bridge 1200 700 Mosfet Module Phase leg 1200 1700 600 Three level inverter 1200 700 Triple Phase leg 1200 Current (A) Package Type 30 40 60 20 50 40 40 20 20 40 49 30 49 30 100 97 59 110 97 194 480 40 59 80 100 118 150 185 200 293 40 80 20 40 160 50 146 89 100 150 SOT227 SOT227 SOT227 SOT227 SOT227 SOT227 SP1 SOT227 SP1 SOT227 SP3F SP3F SOT227 SOT227 SOT227 SP3F SP3F SP3F SP1 SP3F SP6 SP1 SP1 SP3F SP1 SP3F SP3F D3 SP3F SP6 SP1 SP1 SP3F SP3F SP6 SP3F SP6P SP6P SP6P SP6P 1200 650 DUAL 1200 IF (avg) Amps VFvolts Typ 25° C Diode Series Part Number Package Style 10 10 10 20 20 30 30 10 20 30 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 SCE SCD SCD SCD SCD SCD SCD SCD SCD SCD APT10SCE170B APT10SCD120B APT10SCD120K APT20SCD120B APT20SCD120S APT30SCD120B APT30SCD120S APT10SCD65K APT20SCD65K APT30SCD65B TO-247 TO-247 TO-220 TO-247 D3 TO-247 D3 TO-220 TO-220 TO-247 2 x 10 1.5 SCD APT10SCD120BCT TO-247 SILICON CARBIDE (SIC) MOSFETS BV(DSS) Volts RDS(ON) Ohms ID(Cont) Amps Part Number Package Style 0.100 35 APT35SM70B TO-247 0.100 35 APT35SM70S D3 0.053 70 APT70SM70B TO-247 0.053 70 APT70SM70S D3 ISOTOP® 700V 1200V 1700V 0.053 70 APT70SM70J 0.033 130 APT130SM70B TO-247 0.033 130 APT130SM70J ISOTOP® 0.140 25 APT25SM120B TO-247 0.140 25 APT25SM120S D3 0.080 40 APT40SM120B TO-247 0.080 40 APT40SM120S D3 0.080 40 APT40SM120J ISOTOP® 0.040 80 APT80SM120B TO-247 0.040 80 APT80SM120S D3 0.040 80 APT80SM120J ISOTOP® 0.800 5 APT5SM170B TO-247 0.800 5 APT5SM170S D3 Microsemi Patented Technology. Manufactured in Bend, Oregon USA SiC is the perfect technology to address high frequency and high power density applications Lower Power Losses Higher frequency cap. Higher junction temp. SIC MOSFETS Optional Materials: • AlN substrate • Si3N4 Substrate • AlSiC base plate material • Temperature sensor • Press fit terminals (for SP3 package) Characteristics C U S T O M I Z AT I O N Microsemi offers a complete engineering solution with mix and match capabilities in terms of package, interconnection, configuration, performance and cost. Out of the existing standard power modules product line, Microsemi can offer simple, modified or fully customized parts to meet 100% of our customers’ needs. • • • • • • Design expertise High power density Low profile packages Extended temperature capabilities Pin locating flexibility Mix of Silicon Easier cooling Downsized system Higher Reliability SiC vs. Si Results Benefits Breakdown field (MV/cm) 10x Higher Lower On-Resistance Higher efficiency Electron sat. velocity (cm/s) 2x Higher Faster switching Size reduction Bandgap energy (ev) 3x Higher Higher Junction Temperature Improved cooling Thermal conductivity (W/m.K) 3x Higher Higher power density Higher current capabilities Positive Temperature coefficient – Self regulation Easy paralleling Microsemi Advantages vs. Competition • Lowest Conduction Losses at High Temperature • Low Switching Losses • Highest Short Circuit Withstand Rating • Lowest Gate Resistance • Patented SiC Technology The Power of Silicon Carbide Semiconductors Power Modules Discrete Products Breakthrough Technology Combines High Performance & Low Losses SiC Power Module Advantages Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to • • • • High speed switching Low switching losses Low input capacitance Low drive requirements • • • • SIC SCHOTTKY DIODES Low profile Minimum parasitic inductance Lower system cost Increased reliability Volts SINGLE 1700 improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, mil-aerospace and communication market segments. Microsemi is proud to be at the forefront of this game changing technology with a comprehensive portfolio of SiC solutions and in-house fabrication capabilities. EXTREMELY LOW SWITCHING LOSSES Reduction in Losses • Zero reverse recovery charge improves system efficiency Model Inverter HIGH POWER DENSITY • Smaller footprint device reduces system size and weight All SiC Solution = 70% Reduction in Losses SiC Switch + SiC SBD HIGH THERMAL CONDUCTIVITY • 2.5x more thermally conductive than silicon Switching Losses IGBT+SiC SBD Conduction Losses REDUCED SINK REQUIREMENTS • Results in lower cost and smaller size IGBT + Si FWD HIGH TEMPERATURE OPERATION • Increased power density and improved reliability 0 20 40 60 80 100 AUTOMOTIVE INDUSTRIAL AVIATION DEFENSE MEDICAL S TA N D A R D M O D U L E S P/N APT2X30DC60J APT2X40DC60J APT2X60DC60J APT2X20DC120J APT2X50DC120J APT40DC60HJ APTDC40H601G APT20DC120HJ APTDC20H1201G APT40DC120HJ APTSM70TAM60CT3AG APTSM120TA10CT3AG APT50SM70JCU2 APT30SM120JCU2 APT100MC120JCU2 APTSM70HM30CT3AG APTSM120HM50CT3AG APTMC120HM17CT3AG APTSM70AM30CT1AG APTSM70AM15CT3AG APTSM70AM05CT6AG APTMC120AM55CT1AG APTSM120AM55CT1AG APTMC120AM25CT3AG APTMC120AM20CT1AG APTSM120AM25CT3AG APTMC120AM12CT3AG APTMC120AM08CD3AG APTMC120AM09CT3AG APTSM120AM08CT6AG APTMC170AM60CT1AG APTMC170AM30CT1AG APTMC60TL11CT3AG APTMC60TLM55CT3AG APTMC60TLM14CAG APTMC120HRM40CT3AG APTSM70TAM20CTPAG APTSM120TAM33CTPAG APTMC120TAM17CTPAG APTMC120TAM12CTPAG Type Electrical Topology Voltage (V) 600 Dual diode 1200 Diode module 600 Full bridge 1200 3 phase bridge Boost chopper 700 1200 700 1200 700 Full bridge 1200 700 Mosfet Module Phase leg 1200 1700 600 Three level inverter 1200 700 Triple Phase leg 1200 Current (A) Package Type 30 40 60 20 50 40 40 20 20 40 49 30 49 30 100 97 59 110 97 194 480 40 59 80 100 118 150 185 200 293 40 80 20 40 160 50 146 89 100 150 SOT227 SOT227 SOT227 SOT227 SOT227 SOT227 SP1 SOT227 SP1 SOT227 SP3F SP3F SOT227 SOT227 SOT227 SP3F SP3F SP3F SP1 SP3F SP6 SP1 SP1 SP3F SP1 SP3F SP3F D3 SP3F SP6 SP1 SP1 SP3F SP3F SP6 SP3F SP6P SP6P SP6P SP6P 1200 650 DUAL 1200 IF (avg) Amps VFvolts Typ 25° C Diode Series Part Number Package Style 10 10 10 20 20 30 30 10 20 30 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 SCE SCD SCD SCD SCD SCD SCD SCD SCD SCD APT10SCE170B APT10SCD120B APT10SCD120K APT20SCD120B APT20SCD120S APT30SCD120B APT30SCD120S APT10SCD65K APT20SCD65K APT30SCD65B TO-247 TO-247 TO-220 TO-247 D3 TO-247 D3 TO-220 TO-220 TO-247 2 x 10 1.5 SCD APT10SCD120BCT TO-247 SILICON CARBIDE (SIC) MOSFETS BV(DSS) Volts RDS(ON) Ohms ID(Cont) Amps Part Number Package Style 0.100 35 APT35SM70B TO-247 0.100 35 APT35SM70S D3 0.053 70 APT70SM70B TO-247 0.053 70 APT70SM70S D3 ISOTOP® 700V 1200V 1700V 0.053 70 APT70SM70J 0.033 130 APT130SM70B TO-247 0.033 130 APT130SM70J ISOTOP® 0.140 25 APT25SM120B TO-247 0.140 25 APT25SM120S D3 0.080 40 APT40SM120B TO-247 0.080 40 APT40SM120S D3 0.080 40 APT40SM120J ISOTOP® 0.040 80 APT80SM120B TO-247 0.040 80 APT80SM120S D3 0.040 80 APT80SM120J ISOTOP® 0.800 5 APT5SM170B TO-247 0.800 5 APT5SM170S D3 Microsemi Patented Technology. Manufactured in Bend, Oregon USA SiC is the perfect technology to address high frequency and high power density applications Lower Power Losses Higher frequency cap. Higher junction temp. SIC MOSFETS Optional Materials: • AlN substrate • Si3N4 Substrate • AlSiC base plate material • Temperature sensor • Press fit terminals (for SP3 package) Characteristics C U S T O M I Z AT I O N Microsemi offers a complete engineering solution with mix and match capabilities in terms of package, interconnection, configuration, performance and cost. Out of the existing standard power modules product line, Microsemi can offer simple, modified or fully customized parts to meet 100% of our customers’ needs. • • • • • • Design expertise High power density Low profile packages Extended temperature capabilities Pin locating flexibility Mix of Silicon Easier cooling Downsized system Higher Reliability SiC vs. Si Results Benefits Breakdown field (MV/cm) 10x Higher Lower On-Resistance Higher efficiency Electron sat. velocity (cm/s) 2x Higher Faster switching Size reduction Bandgap energy (ev) 3x Higher Higher Junction Temperature Improved cooling Thermal conductivity (W/m.K) 3x Higher Higher power density Higher current capabilities Positive Temperature coefficient – Self regulation Easy paralleling Microsemi Advantages vs. Competition • Lowest Conduction Losses at High Temperature • Low Switching Losses • Highest Short Circuit Withstand Rating • Lowest Gate Resistance • Patented SiC Technology Power Matters. Overview & Resources Silicon Carbide Semiconductor Products Microsemi Corporation has a full silicon carbide (SiC) wafer fab at its Bend, Oregon site. This facility has a For more information contact: 25-year history of innovation and manufacturing of high- SiC Discrete Products voltage high-frequency power semiconductors and is Microsemi Corporation ISO 9001 and JANS certified. 405 SW Columbia Street In addition to producing discrete SiC semiconductors, USA Bend, Oregon 97701 Microsemi has developed a variety of SiC and mixed +1-541-382-8028 semiconductor power modules. These modules, incorporating the latest in available technologies, offer SiC Module Products rugged operation as well as high efficiency. Microsemi Corporation Microsemi has a wide ranging interest in partnering 33520 Bruges, France 26, Rue Campilleau with customers to provide the best SiC solution for a +33-557-921-515 specific application. Extreme Environment Products F U L L I N - H O U S E C A PA B I L I T I E S Discrete Products Microsemi Corporation 6 Lake Street Low Switching Losses Lawrence, Massachusetts 01841 Design +1-978-620-2600 • Silvaco Design and Process Simulator Discrete Products •TCAD-TMA • Mask-Making and Layout High Power Density Corporate Office Microsemi Corporation High Thermal Conductivity One Enterprise • Solid Works & FEA Aliso Viejo, CA 92656 Process Reduced Heat Sink Requirements +1-949-380-6100 • High-Temperature Ion Implantation High Temperature Operation [email protected] • High-Temperature Annealing www.microsemi.com • SiC MOSFET Gate Oxide Reduced Circuit Size and System Costs • ASML Steppers • RIE and Plasma Etching Released Products • Sputtered and Evaporated Metal Deposition Future Products Analytical and Support • Atomic Force Microscope 600 Volt • • • n-Spec Defect DetectionBarrier 150°C Rated Schottky •SEM/EDAX Diodes: 10A, 20A, 30A • Sonoscan X-ray 150°C Ratedand Schottky Barrier Diodes: 10A, 20A, 30A 175°C Rated Schottky Barrier 1700V-175° C Rated Schottky Barrier Diodes: 10A, 20A Released Products • 175°C Rated Schottky Barrier Reliability Testing & Screening Diodes: 10A, 20A, 30A 1200 Volt • Wafer Level HTRB/HTGB • • • Thermal Imaging • HTRB, HTGB, TC, PC, HTOL and 85/85 • 2013 2014 1200V-175°C Rated Schottky Barrier Diode: 50A 600 Volt james.kerr 4/22/13 11:21 AM Deleted: james.kerr 4/22/13 11:21 Deleted: Future Products Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 AM Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: [email protected] PM www.microsemi.com 2013 james.kerr 4/22/13 12:00 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information james.kerr 4/22/13 provided by Microsemi hereunder is provided “as is, where is” and with11:21 all faults, AM and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself Deleted: or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. • 1700V-175° C Rated Schottky 150°C Rated Schottky Barrier Formatted: Font:12 pt ©2016 Microsemi Corporation. All rights reserved. • 1200V-175°C Rated MOSFET Barrier Diodes: 10A, 20A Microsemi and the Microsemi logo are registered Diodes: 10A, 20A, 30A james.kerr 4/22/13 11:27 AM trademarks of Microsemi Corporation. All other • o 80 milliohm Rdson Formatted: No bullets or numbering trademarks and service marks are the property of their respective owners. • james.kerr 4/22/13 11:59 AM 175°C Rated Schottky Barrier Formatted: Font:12 pt, English (US) o Diodes: 160 milliohm Rdson 10A, 20A, 30A james.kerr 4/22/13 11:59 AM • 1200V-175°C Rated Schottky Barrier Diode: 50A SiC 04/16 james.kerr 4/22/13 11:21 AM