Power Discretes and Modules PDM Short Form Catalog ( 8.51 MB )

Power Products
Microsemi Power Portfolio 2016
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Power Semiconductors
Power Modules
RF Power MOSFETs
Power Matters.™
About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for
communications, defense and security, aerospace, and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs, and ASICs; power management products; timing
and synchronization devices and precise time solutions; voice processing devices; RF solutions; discrete components;
enterprise storage and communications solutions, security technologies, and scalable anti-tamper products; Ethernet
solutions; Power-over-Ethernet ICs and midspans; custom design capabilities and services. Microsemi is headquartered
in Aliso Viejo, California, and has approximately 4,800 employees worldwide. Learn more at www.microsemi.com.
CONTENTS
HIGH VOLTAGE SMPS TRANSISTORS
Page No.
IGBTs (Insulated Gate Bipolar Transistors).......................................................................3-5
SiC and Power MOS 8TM MOSFETs / FREDFETs................................................................6-8
Ultra-Fast Low Gate Charge MOSFETs............................................................................... 9
CoolMOSTM MOSFETs....................................................................................................... 10
High Voltage Linear MOSFETs.......................................................................................... 10
DIODES
SiC Schottky and Ultra Fast Recovery Diodes .............................................................11-13
HIGH VOLTAGE RF MOSFETS......................................................................................... 14
HIGH FREQUENCY RF MOSFETS................................................................................... 14
DRIVER-RF MOSFET HYBRIDS....................................................................................... 15
REFERENCE DESIGN KITS.............................................................................................. 15
POWER MODULES
Contents........................................................................................................................... 16
Electrical Configuration.................................................................................................... 17
Packaging......................................................................................................................... 18
Know How and Capabilities........................................................................................19-20
Part Numbering System.................................................................................................... 21
IGBTs (Insulated Gate Bipolar Transistors) .................................................................22-25
MOSFETs.....................................................................................................................26-30
Renewable Energy Power Modules.............................................................................30-31
SiC Power Modules.....................................................................................................32-34
Diodes and Rectifiers ....................................................................................................... 35
PACKAGE OUTLINE DRAWINGS............................................................................... 36-39
“CoolMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“CoolMOS” is a trademark of Infineon Technologies AG.
ASPM®, Power MOS 7® & T-MAX® are registered trademarks of Microsemi Corporation.
Insulated Gate Bipolar Transistors (IGBTs)
IGBTs from Microsemi
IGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching
frequency range spans from DC for minimal conduction loss to 150kHz for very high power density SMPS applications. The frequency
range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the
best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT
technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.
IGBT Switching Frequency Ranges (kHz, hard switched)
0 20 40 60 80 100120140160
Field Stop
600V
Power MOS 8TM PT
650V
900V
Power MOS 8TM NPT (NEW!)
Power MOS 8TM PT
Field Stop
1200V
Power MOS 7TM PT
Power MOS 8TM NPT
Note: Frequency ranges shown are typical for a 50A IGBT. Refer to product data sheet max frequency vs current graph for more information.
Standard
Series
Voltage
Ratings (V)
Technology
MOS 7™
1200
PT
MOS 8™
600, 650, 900,
1200
PT, NPT
600, 1200
Field Stop
Field Stop
Trench Gate
Easy to
Parallel
Short Circuit Comment
SOA
Ultra-low gate charge
Highest efficiency
X
Product Options
X
Lowest conduction loss
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series
diode. Package options include TO-220, TO-247, T-MAX®, TO-264, and SOT-227. Customized products are available; contact
factory for details.
3
Insulated Gate Bipolar Transistors (IGBTs)
BVCES
Volts
POWER MOS 8™
• NPT Technology
• High Speed Switching
• Low Switching Losses
• Easy to Parallel
SINGLE
650
VCE(ON)
Typ 25OC
100oC
1.9
45
1.9
70
95
2.5
2.5
2.5
2.5
2.5
2.5
25
25
40
40
50
50
2.5
2.5
2.5
2.5
2.5
2.5
70
70
70*
85
85
85*
Combi (IGBT & Diode)
1.9
650
45
1.9
1.9
45
70
1.9
70
1.9
1200
POWER MOS 8™
• PT Technology
• Fast Switching
• Highest Efficiency
• Combi with High
Speed DQ Diode
SINGLE
600
900
95
2.5
2.5
2.5
2.5
2.5
2.5
25
25
25
25
40
40
2.5
2.5
2.5
50*
70*
85*
2.0
2.0
2.0
2.0
2.0
2.0
36
44
54
68
80
102
2.5
2.5
2.5
2.5
35
43
64
80
Combi (IGBT & "DQ" FRED)
600
900
Maximum IC
at Frequency
150 kHz
1.9
1200
IC2
2.0
2.0
2.0
2.0
2.0
2.0
36
44
54
60
68
80
2.5
2.5
2.5
2.5
2.5
2.5
27
35
43
46
64
80
Part Number
Package
Style
APT45GR65B
TO-247
APT70GR65B
TO-247
APT95GR65B2
T-MAX®
APT25GR120B
APT25GR120S
APT40GR120B
APT40GR120S
APT50GR120B2
APT50GR120L
TO-247
D3
TO-247
D3
T-MAX®
TO-264
APT70GR120B2
APT70GR120L
APT70GR120J
APT85GR120B2
APT85GR120L
APT85GR120J
T-MAX®
TO-264
ISOTOP®
T-MAX®
TO-264
ISOTOP®
APT45GR65BSCD10
TO-247 (SiC SBD)
APT45GR65B2DU30
APT70GR65B2SCD30
T-MAX® (DU Diode)
T-MAX® (SiC SBD)
APT70GR65B2DU40
T-MAX® (DU Diode)
APT95GR65JDU60
ISOTOP® (DU Diode)
APT25GR120BD15
APT25GR120SD15
APT25GR120BSCD10
APT25GR120SSCD10
APT40GR120B2D30
APT40GR120B2SCD10
TO-247 (DQ)
D3 (DQ)
TO-247 (SiC SBD)
D3 (SiC SBD) v
T-MAX® (DQ)
T-MAX® (SiC SBD)
APT50GR120JD30
APT70GR120JD60
APT85GR120JD60
ISOTOP® (DQ)
ISOTOP® (DQ)
ISOTOP® (DQ)
APT36GA60B
APT44GA60B
APT54GA60B
APT68GA60B
APT80GA60B
APT102GA60B2
TO-247 or D
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
T-MAX® or TO-264
APT35GA90B
APT43GA90B
APT64GA90B
APT80GA90B
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
APT36GA60BD15
APT44GA60BD30
APT54GA60BD30
APT60GA60JD60
APT68GA60B2D40
APT80GA60LD40
TO-247 or D3
TO-247 or D3
TO-247 or D3
ISOTOP®
T-MAX® or TO-264
TO-264
APT27GA90BD15
APT35GA90BD15
APT43GA90BD30
APT46GA90JD40
APT64GA90B2D30
APT80GA90LD40
TO-247 or D3
TO-247 or D3
TO-247 or D3
ISOTOP®
T-MAX® or TO-264
TO-264
200 kHz
31
25
100 kHz
150 kHz
52
39
50 kHz
100 kHz
69
41
50 kHz
80 kHz
25
25
38
38
48
48
21
21
28
28
36
36
25 kHz
50 kHz
66
66
42
72
72
46
42
42
30
46
46
31
150 kHz
200 kHz
31
25
100 kHz
150 kHz
30
52
18
39
50 kHz
100 kHz
59
38
40 kHz
80 kHz
50
35
50 kHz
80 kHz
25
25
25
25
38
38
21
21
21
21
28
28
25 kHz
50 kHz
42
42
46
32
30
31
50 kHz
80 kHz
21
26
30
35
40
51
17
20
23
27
31
39
25 kHz
50 kHz
17
21
29
34
10
13
19
23
50 kHz
80 kHz
21
26
30
48
35
40
17
20
23
36
27
31
25 kHz
50 kHz
14
17
21
33
29
34
8
10
13
21
19
23
TO-247[B]
D3 PAK[S]
Part Numbers for D3
packages - replace
"B” with “S” in part
number
T-MAX®[B2]
TO-264[L]
3
264-MAXTM[L2]
Current @ Frequency Test Conditions: Tj = 125oC, Tc = 100oC except Isotop® where Tc = 80oC, Vcc = 67% rated voltage Hard Switch
Part Numbers for
TO-264 packages replace "B2" with
"L" in part number
ISOTOP®[J]
SOT-227
C
G
E
* Ic2 for ISOTOP packages measured at 70°C for 1200V NPT IGBTs
®
Datasheets available on www.microsemi.com
4
All Products RoHS Compliant
Insulated Gate Bipolar Transistors (IGBTs)
BVCES
Volts
FIELD STOP
• Trench Technology
• Short Circuit
Rated
•Lowest
Conduction Loss
• Easy Paralleling
• Combi with High
Speed DQ Diode
SINGLE
600
1200
VCE(ON)
Typ 25OC
100oC
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
24
37
64
93
123
135
190
230
158
1.7
1.7
1.7
1.7
1.7
1.7
1.7
33
46
66
70
99
120
99
Combi (IGBT & "DQ" FRED)
600
1200
Power MOS 7®
and IGBT
SINGLE
• PT Technology
• Ultra-low Gate Charge
• Combi with High
Speed DQ Diode
1200
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
24
37
64
93
123
135
190
158
1.7
1.7
1.7
1.7
1.7
1.7
1.7
22
33
46
57
66
70
99
3.3
3.3
3.3
3.3
3.3
3.3
33
46
54
34
91
57
Combi (IGBT & "DQ" FRED)
1200
IC2
3.3
3.3
3.3
3.3
3.3
33
46
54
34
57
Maximum IC
at Frequency
15 kHz
30 kHz
15
20
30
42
75
54
79
103
100
10
14
21
30
47
39
57
75
66
10 kHz
20 kHz
19
24
32
44
45
58
60
13
17
22
27
30
38
36
15 kHz
30 kHz
15
20
30
42
75
54
79
100
10
14
21
30
47
39
57
66
10 kHz
20 kHz
14
19
24
36
32
44
60
10
13
17
22
22
27
36
20 kHz
40 kHz
19
24
29
28
42
40
12
15
18
18
24
23
20 kHz
40 kHz
19
24
29
28
40
12
15
18
18
23
Part Number
Package
Style
APT20GN60BG
APT30GN60BG
APT50GN60BG
APT75GN60BG
APT150GN60J
APT100GN60B2G
APT150GN60B2G
APT200GN60B2G
APT200GN60J
TO-247
TO-247
TO-247
TO-247
ISOTOP®
T-MAX®
T-MAX®
T-MAX®
ISOTOP®
APT25GN120BG
APT35GN120BG
APT50GN120B2G
APT100GN120J
APT75GN120B2G
APT100GN120B2G
APT150GN120J
TO-247 or D3
TO-247
T-MAX®
ISOTOP®
T-MAX® or TO-264
T-MAX®
ISOTOP®
APT20GN60BDQ1G
APT30GN60BDQ2G
APT50GN60BDQ2G
APT75GN60LDQ3G
APT150GN60JDQ4
APT100GN60LDQ4G
APT150GN60LDQ4G
APT200GN60JDQ4
TO-247
TO-247
TO-247
TO-264
ISOTOP®
TO-264v
TO-264
ISOTOP®
APT15GN120BDQ1G
APT25GN120B2DQ2G
APT35GN120L2DQ2G
APT75GN120JDQ3
APT50GN120L2DQ2G
APT100GN120JDQ4
APT150GN120JDQ4
TO-247 or D3
T-MAX®
264-MAX™
ISOTOP®
264-MAX™
ISOTOP®
ISOTOP®
APT25GP120BG
APT35GP120BG
APT45GP120BG
APT45GP120J
APT75GP120B2G
APT75GP120J
TO-247
TO-247
TO-247
ISOTOP
T-MAX®
ISOTOP
APT25GP120BDQ1G
APT35GP120B2DQ2G
APT45GP120B2DQ2G
APT45GP120JDQ2
APT75GP120JDQ3
TO-247
T-MAX®
T-MAX®
ISOTOP
ISOTOP
D3 PAK[S]
TO-247[B]
Part Numbers for D3
packages replace "B" with
"S" in part number
T-MAX®[B2]
TO-264[L]
Part Numbers for L
packages replace "B2" with
"L" in part number
ISOTOP®[J]
SOT-227
C
G
Current @ Frequency Test Conditions: Tj = 125 C, Tc = 100 C except Isotop® where Tc = 80 C, Vcc = 67% rated voltage Hard Switch
o
Datasheets available on www.microsemi.com
o
o
5
All Products RoHS Compliant
E
Silicon Carbide (SiC) MOSFETs
BV(DSS)
Volts
700V
1200V
1700V
RDS(ON)
Ohms
ID(Cont)
Amps
Part
Number
Package
Style
0.100
35
APT35SM70B
TO-247
0.100
35
APT35SM70S
D3
0.053
70
APT70SM70B
TO-247
0.053
70
APT70SM70S
D3
0.053
70
APT70SM70J
ISOTOP®
0.033
130
APT130SM70B
TO-247
0.033
130
APT130SM70J
ISOTOP®
0.140
25
APT25SM120B
TO-247
0.140
25
APT25SM120S
D3
0.080
40
APT40SM120B
TO-247
0.080
40
APT40SM120S
D3
0.080
40
APT40SM120J
ISOTOP®
0.040
80
APT80SM120B
TO-247
0.040
80
APT80SM120S
D3
0.040
80
APT80SM120J
ISOTOP®
0.800
5
APT5SM170B
TO-247
0.800
5
APT5SM170S
D3
Microsemi Patented Technology. Manufactured in Bend, Oregon USA
SiC is the perfect
technology to address high
frequency and high power
density applications
Lower Power Losses
Higher frequency cap.
Higher junction temp.
Easier cooling
Downsized system
Higher Reliability
SiC MOSFETs
Characteristics
SiC vs. Si
Breakdown field (MV/cm)
10x Higher
Lower On-Resistance
Higher efficiency
Electron sat. velocity (cm/s)
2x Higher
Faster switching
Size reduction
Bandgap energy (ev)
3x Higher
Higher Junction Temperature
Improved cooling
Thermal conductivity (W/m.K)
3x Higher
Higher power density
Higher current capabilities
Self regulation
Easy paralleling
Positive Temperature coefficient
–
Results
Microsemi Advantages Vs. Competition
•
•
•
•
•
Lowest Conduction Losses at High Temperature
Low Switching Losses
Highest Short Circuit Withstand Rating
Lowest Gate Resistance
Patented SiC Technology
6
Benefits
Power MOS 8TM MOSFETs / FREDFETs
BV(DSS)
Volts
RDS(ON)
Max
ID
MOSFET
Part #
2.40
2.10
8
14
0.63
24
14
APT13F120B
23
APT22F120B2
Package
Style
TO-247 or D3
TO-247
TO-247 or D3
TO-247
T-MAX® or TO-264
T-MAX® or TO-264
0.58
27
APT26F120B2
T-MAX® or TO-264
0.58
18
APT17F120J
ISOTOP®
0.53
29
APT28M120B2
0.53
19
APT19M120J
0.29
35
1.80
1.40
8
9
APT7F100B
9
APT9F100B
APT14F100B
APT14M100B
0.44
TO-247 or D3
APT17F100B
TO-247 or D3
TO-247
30
APT29F100B2
T-MAX® or TO-264
20
APT19F100J
ISOTOP®
0.38
32
APT31M100B2
35
APT34F100B2
T-MAX® or TO-264
0.38
21
APT21M100J
23
APT22F100J
ISOTOP®
0.33
37
APT37M100B2
0.33
25
APT25M100J
0.20
0.18
0.80
13
APT24M80B
43
APT41M80B2
0.24
0.21
APT17F80B
0.21
TO-247 or D3
APT22F80B
TO-247 or D3
41
APT38F80B2
T-MAX® or TO-264
47
APT44F80B2
T-MAX® or TO-264
31
APT29F80J
ISOTOP®
49
APT48M80B2
T-MAX® or TO-264
0.19
33
APT32M80J
ISOTOP®
60
APT58M80J
0.10
57
Datasheets available on www.microsemi.com
Part Numbers for TO-264
packages - replace "B2"
with "L" in part number
TO-247 or D3
0.19
0.11
TO-264[L]
TO-247 or D3
23
25
TO-247 or D3
TO-247
APT18M80B
0.43
0.39
APT11F80B
APT12M80B
18
19
ISOTOP®
ISOTOP®
12
0.58
0.53
ISOTOP®
APT41F100J
APT45M100J
0.90
T-MAX®[B2]
T-MAX® or TO-264
42
45
Part Numbers for D3 packages - replace "B” with “S”
in part number
TO-247 or D3
APT18M100B
0.44
TO-247 or D3
D3 PAK[S]
TO-247
17
18
TO-247
TO-247
APT9M100B
0.78
0.70
7
14
14
ISOTOP®
ISOTOP®
APT8M100B
0.98
0.88
ISOTOP®
APT32F120J
APT34M120J
1.60
TO-247[B]
T-MAX® or TO-264
33
2.00
800
APT7F120B
APT24M120B2
0.32
1000
7
APT14M120B
0.70
1200
FREDFET
Part #
APT7M120B
1.20
1.10
ID
APT53F80J
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
ISOTOP®
ISOTOP®
7
All Products RoHS Compliant
Power MOS 8TM MOSFETs / FREDFETs
BV(DSS)
Volts
600
500
RDS(ON)
Max
ID
MOSFET
Part #
ID
FREDFET
Part #
Package
Style
0.43
16
APT15F60B
TO-247 or D3
0.37
19
APT18F60B
TO-247 or D3
0.29
24
APT23F60B
TO-247 or D3
0.22
30
APT28F60B
TO-247 or D3
0.19
36
APT34M60B
36
APT34F60B
TO-247
0.15
45
APT43M60B2
45
APT43F60B2
T-MAX® or TO-264
0.15
31
APT30M60J
31
APT30F60J
ISOTOP®
0.11
60
APT56M60B2
60
APT56F60B2
T-MAX® or TO-264
0.11
42
APT39M60J
42
APT39F60J
ISOTOP®
0.09
70
APT66M60B2
70
APT66F60B2
T-MAX® or TO-264
0.09
49
APT47M60J
49
APT47F60J
ISOTOP®
0.055
84
APT80M60J
84
APT80F60J
ISOTOP®
0.24
24
APT24F50B
TO-247 or D3
0.19
30
APT30F50B
TO-247 or D3
0.15
37
APT37F50B
TO-247 or D3
0.13
43
APT42F50B
TO-247 or D3
0.10
56
APT56M50B2
56
APT56F50B2
T-MAX® or TO-264
0.10
38
APT38M50J
38
APT38F50J
ISOTOP®
0.075
75
APT75M50B2
75
APT75F50B2
T-MAX® or TO-264
0.075
51
APT51M50J
51
APT51F50J
ISOTOP®
0.062
84
APT84M50B2
84
APT84F50B2
T-MAX® or TO-264
0.062
58
APT58M50J
58
APT58F50J
ISOTOP®
0.036
103
APT100M50J
103
APT100F50J
ISOTOP®
TO-247[B]
D3 PAK[S]
Part Numbers for D3 packages
- replace "B" with "S" in part
number
T-MAX®[B2]
Low Voltage Power MOS V® MOSFETs / FREDFETs
300
200
0.085
40
APT30M85BVRG
40
APT30M85BVFRG
TO-247
0.070
48
APT30M70BVRG
48
APT30M70BVFRG
TO-247 or D3
0.040
70
APT30M40JVRG
70
APT30M40JVFRG
ISOTOP®
0.019
130
APT30M19JVR
130
APT30M19JVFR
ISOTOP®
0.045
56
APT20M45BVRG
56
APT20M45BVFRG
TO-247
0.038
67
APT20M38BVRG
37
APT20M38BVFRG
TO-247 or D3 or T/R
0.022
100
APT20M22B2VRG
100
APT20M22B2VFRG
T-MAX® or TO-264
0.011
175
APT20M11JVR
175
APT20M11JVFR
ISOTOP®
TO-264[L]
Part Numbers for TO-264
packages - replace "B2" with
"L" in part number
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
Datasheets available on www.microsemi.com
8
All Products RoHS Compliant
Ultrafast, Low Gate Charge MOSFETs
FOR 250 kHz - 2 MHz SWITCHING APPLICATIONS
These devices are ideally suited for high frequency
and pulsed high voltage applications.
The Ultrafast, Low Gate Charge MOSFET family combines the
lowest gate charge available in the industry with Microsemi’s
proprietary self-aligned aluminum metal gate structure. The
result is a MOSFET capable of extremely fast switching speeds
and very low switching losses. The metal gate structure and the
layout of these chips provide an internal series gate resistance
(EGR) an order of magnitude lower than competitive devices
built with a polysilicon gate.
Typical Applications:
•
•
•
•
FEATURES:
BV(DSS)
Volts
1200
1000
800
500
Class D amplifiers up to 2 MHz
High voltage pulsed DC
AM transmitters
Plasma deposition/etch
BENEFITS:
l
Series Gate Resistance (Rg) <0.1 ohm
l
Fast switching, uniform signal propagation
l
Tr and Tf times of <10ns
l
Pulse power applications
l
Industry's Lowest Gate Charge
l
Fast switching, reduced gate drive power
RDS(ON)
Max
ID
4.700
3.5
APT1204R7BFLLG
TO-247 or D3
1.400
9
APT1201R4BFLLG
TO-247
0.670
18
APT12067B2LLG
T-MAX®
0.670
17
APT12067JLL
ISOTOP®
0.570
22
APT12057B2LLG
T-MAX®
0.570
19
APT12057JLL
ISOTOP®
0.900
12
APT10090BLLG
TO-247
0.780
14
APT10078BLLG
TO-247 or D3
0.450
23
APT10045B2LLG
T-MAX® or TO-264
0.450
21
APT10045JLL
ISOTOP®
MOSFET Part #
FREDFET Part #
Package
Style
0.350
28
APT10035B2LLG
T-MAX®
0.350
25
APT10035JLL
ISOTOP®
0.260
38
0.260
30
0.210
37
0.140
APT10026L2FLLG
TO-264 MAX
APT10026JLL
APT10026JFLL
ISOTOP®
APT10021JLL
APT10021JFLL
ISOTOP®
52
APT8014L2LLLG
APT8014L2FLLG
TO-264 MAX
0.110
51
APT8011JLL
APT8011JFLL
0.200
38
APT8020B2LL
T-MAX®
0.200
33
APT8020JLL
ISOTOP® or D3 or T/R
0.140
35
APT5014BLLG
TO-247
0.100
46
APT5010B2LLG
APT5010B2FLLG
T-MAX® or TO-264
0.065
67
APT50M65B2LLG
APT50M65B2FLLG
T-MAX® or TO-264
0.065
58
APT50M65JLLG
APT50M65JFLLG
ISOTOP®
0.075
51
APT50M75JLL
APT50M75JFLL
ISOTOP®
0.075
57
APT50M75B2LLG
T-MAX® or TO-264
0.050
71
APT50M50JLL
ISOTOP®
0.038
88
APT50M38JLL
ISOTOP®
Datasheets available on www.microsemi.com
9
T-MAX®[B2]
TO-247[B]
T-MAX® or TO-264
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
All Products RoHS Compliant
CoolMOS MOSFETs
TM
BVDSSRDS(ON)ID(Cont)
Volts
Ohms
Amps
D3 PAK[S]
TO-268
C3 TECHNOLOGY
Package Style
Part Number
900 0.120 36APT36N90BC3G
TO-247
0.450 11APT11N80BC3G
TO-247
800
T-MAX® or TO-264
0.145
34
APT34N80B2C3G
0.145 34APT34N80LC3G
TO-264
0.035
94
APT94N65B2C3G
T-MAX® or TO-264
650
0.070
47
APT47N65BC3G
TO-247 or D3
0.070
47
APT47N60BC3G
TO-247 or D3
0.035 77APT77N60JC3
600
0.042 94APT94N60L2C3G
TO-247[B]
T-MAX®[B2]
TO-264[L]
264-MAX™ [L2]
ISOTOP®
264-MAX™
SERVER SERIES
0.045
60
APT60N60BCSG
TO-247 or D3 or T/R
C6 TECHNOLOGY
0.041
77
APT77N60BC6
TO-247 or D3
0.070
53
APT53N60BC6
TO-247 or D3
600 0.099
38
APT38N60BC6 TO-247 or D3
0.125
30
APT30N60BC6
TO-247 or D3
0.035
106 APT106N60B2C6
T-MAX™ or TO-264
0.041
85
APT97N65B2C6
650
0.035 94APT94N65B2C6
T-MAX™ or TO-264
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
T-MAX™
“CoolMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“CoolMOS” is a trademark of Infineon Technologies AG.
Linear MOSFETs
What is a Linear MOSFET?
A MOSFET specifically designed to be more robust than a standard MOSFET when
operated with both high voltage and high current near DC conditions (>100msecs).
The Problem with SMPS MOSFETs
MOSFETs optimized for high frequency SMPS applications have poor high voltage DC
SOA. Most SMPS type MOSFETs over-state SOA capability at high voltage on the data sheets.
Above ~30V and DC conditions, SOA drops faster than is indicated by PD limited operation.
For pulsed loads (t<10ms) there is generally no problem using a standard MOSFET.
Technology Innovation
Introduced in 1999, Microsemi modified its proprietary patented self-aligned metal gate
MOSFET technology for enhanced performance in high voltage, linear applications. These Linear
MOSFETs typically provide 1.5-2.0 times the DC SOA capability at high voltage compared to
other MOSFET technologies optimized for switching applications.
BVDSSRDS(ON)ID(Cont) SOA
Volts
Ohms
Amps
Watts
Part Number
10000.600 18
325 APL1001J
600
0.125
0.125
49
43
325
325
APL602B2G
APL602J
500
0.090
0.090
58
52
325
325
APL502B2G
APL502J
Designers will need Linear MOSFETs when…
• High Current & > 200V >100msec
• Used as a variable power resistor
• Soft start application (limit surge currents)
• Linear amplifier circuit
Typical Applications…
• Active loads above 200 volts such as DC dynamic
loads for testing power supplies, batteries, fuel cells, etc.
• High voltage, high current constant current sources.
Package Style
ISOTOP®[J]
SOT-227
(ISOLATED
BASE)
T-MAX®[B2]
TO-264[L]
Part Numbers for TO-264 packages - replace ”B2” with “L” in part number
Datasheets available on www.microsemi.com
10
All Products RoHS Compliant
Ultra Fast Recovery Diodes
Microsemi PPG offers five series of discrete diode products: a new DL series low VF ultra-soft recovery, the medium speed medium VF
D series, the high speed DQ series, the very high speed DS series, and the silicon Schottky S series. These series of diodes are designed
to provide high quality solutions to a wide range of high voltage, high power application requirements, ranging from fast recovery for
continuous conduction mode power factor correction to low conduction loss for output rectification. Distinguishing features, technology
used, and applications for each product family are summarized in the table below.
Series
Voltage
Ratings
Features
Applications
Comment
Output rectifier
Resonant circuits
Ultra-soft recovery minimizes or
eliminates snubber
DL
600
Low VF
Ultra-soft recovery
Avalanche Rated
D
200, 300, 400,
600, 1000, 1200
Medium VF
Medium Speed
DQ
600, 1000, 1200
High speed
Avalanche Rated
DS
600
Very high speed
Schottky
200
Low VF
Avalanche rated
SiC
Schottky
650, 1200, 1700
Zero Reverse Recovery
Freewheeling Diode
Output rectifier
DC-DC converter
PFC
Freewheeling Diode
DC-DC converter
High frequency PFC
Output rectifier
Freewheeling Diode
DC-DC converter
PFC,
Freewheeling Diode
DC-DC converter
Proprietary platinum process
Stepped epi improves softness
Proprietary platinum process
Proprietary platinum process
Low switching losses,
high power density and
high temperature operation
The graph below shows the relative recovery speed and forward voltage positions of 600V DL, D, DQ and DS series diodes.
11
SIC SCHOTTKY Diodes
SIC SCHOTTKY DIODES
Volts
SINGLE
1700
1200
650
DUAL
1200
IF (avg)
Amps
VFvolts
Typ 25° C
Diode
Series
Part
Number
10
10
10
20
20
30
30
10
20
30
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
SCE
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
APT10SCE170B
APT10SCD120B
APT10SCD120K
APT20SCD120B
APT20SCD120S
APT30SCD120B
APT30SCD120S
APT10SCD65K
APT20SCD65K
APT30SCD65B
TO-247
TO-247
TO-220
TO-247
D3
TO-247
D3
TO-220
TO-220
TO-247
2 x 10
1.5
SCD
APT10SCD120BCT
TO-247
Package Style
Ultra Fast Recovery Diodes
Volts
IF (avg) Amps
QRR (nC)Diode
VF (volts)tRR(ns)
O
Typ
C Series
O
O
Typ 25 C Typ 25 C at I =125
Part Number
I (avg)
15 2.8
SINGLE
15 2.8
152.0
152.0
30 2.8
1200
30 2.8
302.0
40 2.8
60 2.8
60
2.0
75 2.8
15 2.5
15 2.5
151.9
30 2.5
1000
30 2.5
301.9
40 2.5
60 2.5
60
1.9
75 2.5
15 2.0
15 2.0
151.6
151.6
30 2.0
600
30 2.0
301.6
40 2.0
60 2.0
60
1.6
75 2.0
100 1.25
301.3
400
601.3
301.1
30
0.83
200 601.1
60
0.83
100 0.89
Datasheets available on www.microsemi.com
F
F
Package
Style
21 960DQAPT15DQ120BG
TO-247
21 960DQAPT15DQ120KG
TO-220
32 1300DAPT15D120BG
TO-247
32 1300DAPT15D120KG
TO-220
TO-220[K]
24 1800DQAPT30DQ120BG
TO-247
24 1800DQAPT30DQ120KG
TO-220
31 3450DAPT30D120BG
TO-247
26 2200DQAPT40DQ120BG
TO-247
30 2800DQAPT60DQ120BG
TO-247
38
4000
D
APT60D120BG
TO-247 or D3
32 3340DQAPT75DQ120BG
TO-247
20 810DQAPT15DQ100BG
TO-247
D3 PAK[S]
20 810DQAPT15DQ100KG
TO-220
TO-268
28 1550DAPT15D100KG
TO-220
22 1250DQAPT30DQ100BG
TO-247
22 1250DQAPT30DQ100KG
TO-247
29 2350DAPT30D100BG
TO-247
24 1430DQAPT40DQ100BG
TO-247
29 2325DQAPT60DQ100BG
TO-247
TO
34
3600
D
APT60D100BG
TO-247 or D3
-2
47
33 2660DQAPT75DQ100BG
TO-247
16 250DQAPT15DQ60BG
TO-247
16 250DQAPT15DQ60KG
TO-220
21 520DAPT15D60BGTO-247
21 520DAPT15D60KGTO-220
TO-247[B]
19 400DQAPT30DQ60BG
TO-247
19 400DQAPT30DQ60KG
TO-220
23700
D
APT30D60BG
TO-247
22 480DQAPT40DQ60BG
TO-247
26 640DQAPT60DQ60BG
TO-247
40
920
D
APT60D60BG
TO-247 or D3
29 650DQAPT75DQ60BG
TO-247
45 3800DLAPT100DL60BG
TO-247
22 360DAPT30D40BGTO-247
30 540DAPT60D40BGTO-247
21 150DAPT30D20BGTO-247
T-MAX®[B2]
25
448
Schottky
APT30S20BG
TO-247 or D3
30 250DAPT60D20BGTO-247
Part Numbers for D3packages
- replace ”B” with “S” in part
35
490
Schottky
APT60S20BG
TO-247 or D3 or T/R
number
40
690SchottkyAPT100S20BG TO-247
12
All Products RoHS Compliant
Ultra Fast Recovery Diodes
IF (avg) Volts
Amps
QRR (nC)Diode
VF (volts)tRR(ns)
O
Typ
C Series
O
O
Typ 25 C Typ 25 C at I =125
Part Number
IF (avg)
Package
Style
F
2x27
DUAL
2x30
2x53
1200
2x60
2x93
2x100
2.0
2.6
2.0
2.5
2.0
2.4
31
25
38
30
47
45
3450 DAPT2X30D120J
1800 DQAPT2X30DQ120J
4000 DAPT2X60D120J
2890 DQ APT2X60DQ120J
5350 DAPT2X100D120J
5240 DQAPT2X100DQ120J
1000
2x28
2x55
2x60
2x95
2x100
1.9
1.9
2.2
1.9
2.1
29
34
30
43
45
2350 DAPT2X30D100J
3600 DAPT2X60D100J
2350 DQ APT2X60DQ100J
4050 DAPT2X100D100J
3645 DQAPT2X100DQ100J
600
2x30
2x30
2x60
2x60
2x100
2x100
2x150
1.8
1.6
1.7
1.6
1.6
1.6
1.25
20
23
27
40
30
34
53
400 DQAPT2X30DQ60J
700
D
APT2X30D60JISOTOP®
650 DQAPT2X60DQ60J
920 DAPT2X60D60J
980 DQAPT2X100DQ60J
1450 DAPT2X100D60J
3800 DLAPT2X150DL60J
400
300
2x30
2x60
2x100
2x100
1.3
1.3
1.3
1.0
22
30
37
40
360 DAPT2X30D40J
540 DAPT2X60D40J
1050 DAPT2X100D40J
3550 DLAPT2X101DL40J++
2x100 1.2
36 650 DAPT2X101D30J
200
2x30
2x60
2x100
2x100
0.80
0.83
1.1
0.89
25
35
39
40
2.8
26
2100
2.5
1.9
1.9
1.9
2.5
1.9
1.6
2.0
1.6
2.0
2.0
1.6
1.6
1.6
2.0
2.0
1.6
1.3
1.3
1.2
1.1
1.1
0.80
0.83
0.89
20
28
29
30
29
35
21
15
20
22
19
23
25
25
22
26
30
22
30
25
21
21
25
35
40
810
DQ
APT15DQ100BCTG
TO-247 [BCT]
1550
D
APT15D100BCTG
TO-247 [BHB]
2360
D
APT30D100BCTG
TO-247 [BHB]
2350
D
APT30D100BHBG
TO-247 [BCA]
2325
DQ
APT60DQ100LCTG
TO-264 [LCT]
3600
D
APT60D100LCTG
TO-264 [LCT]
520 DAPT15D60BCTGTO-247
250
DQ
APT15DQ60BCTG
TO-247 [BCT]
520
D
APT15D60BCAG
TO-247 [BCA]
480
DQ
APT30DQ60BHBG
TO-247 [BHB]
400
DQ
APT30DQ60BCTG
TO-247 [BCT]
700
D
APT30D60BCTG
TO-247 [BCT]
700
D
APT30D60BHBG
TO-247 [BHB]
700
D
APT30D60BCAG
TO-247 [BCA]
480
DQ
APT40DQ60BCTG
TO-247 [BCT]
640
DQ
APT60DQ60BCTG
TO-247 [BCT]
920
D
APT60D60LCTG
TO-264 [LCT]
360
D
APT30D40BCTG
TO-247 [BCT]
540
D
APT60D40LCTG
TO-264 [LCT]
1300
D
APT30D30BCTG
TO-247 [BCT]
150
D
APT30D20BCTG
TO-247 [BCT]
150
D
APT30D20BCAG
TO-247 [BCA]
448
Schottky
APT30S20BCTG
TO-247 [BCT]
490 SchottkyAPT60S20B2CTG T-MAX® [B2CT]
690 SchottkyAPT100S20LCTG TO-264[LCT]
1200
1000
600
400
300
200
2x30
2x15
2x15
2x30
2x30
2x60
2x60
2x15
2x15
2x15
2x30
2x30
2x30
2x30
2x30
2x40
2x60
2x60
2x30
2x60
2x30
2x30
2x30
2x30
2x60
2x100
APT30DQ120BCTG
TO
-
24
*Current ratings per leg
++ Parallel Form Only
TO-247 [BCT]
85 DSAPT15DS60BG TO-247
180 DSAPT30DS60BG TO-247
13
7
TO-247[BCA]
*Common Anode
TANDEM, DS DIODES FOR PFC BOOST APPLICATIONS
600
15 3.2
13
30 3.2
17
(2, 300V Diodes Connected In Series)
Part Numbers for Parallel
Configuration replace 30, 60,
or 100 with 31, 61, or 101.
Except Schottky
Example: 2X30D120J
becomes 2X31D120J
448 SchottkyAPT2X31S20J
490 SchottkyAPT2X61S20J
840 DAPT2X100D20J
690 SchottkyAPT2X101S20J
DQ
ISOTOP®[J] SOT-227
Antiparallel
Configuration
(ISOLATED BASE)
Datasheets available on www.microsemi.com
TO-247[BCT]
*Common Cathode
TO
-
24
7
TO-247[BHB]
*Half Bridge
T-M
ax
T-MAX® [B2CT]
*Common Cathode
TO
-
26
4
TO-264[LCT]
*Common Cathode
Part Numbers for D3
packages - replace ”B” with “S” in part number
All Products RoHS Compliant
High Voltage RF MOSFETs
The ARF family of RF Power MOSFETs are optimized for applications requiring frequencies as high as 150MHz and operating voltages as
high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining
Microsemi's high voltage MOSFET technology with RF specific die geometries.
Why Higher Voltage? Higher VDD means higher load impedance. For 150W output from a 50V supply, the load impedance is only 8 ohms.
At 125V, the load impedance is 50 ohms. The higher impedance allows simpler transformers and combiners. Paralleled devices can still operate into reasonable and convenient impedances. The increased operating voltage also lowers the DC current required for any given power
output, increasing efficiency and reducing the size, weight and cost of other system components. High breakdown voltage is a necessity in
high efficiency switchmode amplifiers such as class C-E, which can see peak drain voltages of over 4X the applied VDD.
Part
Number
Pout
(W)
Freq. VDD/BVDSS
(MHz)
(V)
Rthjc
(OC/W)
Package
Style
Class of
Operation
ARF449AG/BG
90
120
150/450
0.76
TO-247
A-E
ARF463AG/BG
100
100
125/500
0.70
TO-247
A-E
ARF463AP1G/BP1G
100
100
125/500
0.70
TO-247
A-E
ARF446G/ARF447G
140
65
250/900
0.55
TO-247
A-E
ARF521
150
150
165/500
0.60
M174
A-E
ARF460AG/BG
150
65
125/500
0.50
TO-247
A-E
ARF461AG/BG
150
65
250/1000
0.50
TO-247
A-E
ARF465AG/BG
150
60
300/1200
0.50
TO-247
A-E
ARF468AG/BG
270
45
165/500
0.38
TO-264
A-E
ARF475FL
300
150
165/500
0.31
T3A
A-E
ARF476FL
300
150
165/500
0.31
T3
A-E
ARF466AG/BG
300
45
200/1000
0.35
TO-264
A-E
ARF466FL
300
45
200/1000
0.13
T3A
A-E
ARF479
300
150
165/500
0.31
T3C
A-E
ARF469AG/BG
350
45
165/500
0.28
TO-264
A-E
ARF477FL
400
65
165/500
0.18
T3A
A-E
ARF1500
750
40
125/500
0.12
T1
A-E
ARF1501
750
40
250/1000
0.12
T1
A-E
ARF1510
750
40
700/1000
0.12
T1
D
ARF1511
750
40
380/500
0.12
T1
D
ARF1519
750
25
250/1000
0.13
T2
A-E
High Frequency RF MOSFETs
The VRF family of RF MOSFETs are improved replacements for
industry standard RF transistors. They provide improved ruggedness by increasing the BVDSS over 30% from the industry standard
of 125 volts to 170V minimum. Low cost flangeless packages
are another improvement that show Microsemi's dedication to
optimizing performance, reducing cost and improving reliability.
We will continue to offer a greater number of product offerings
in the new reduced-cost flangeless packages.
Datasheets available on www.microsemi.com
Part
Number
VRF148A
VRF141
VRF151
VRF152
VRF191
VRF150
VRF161
VRF151G
VRF2933
VRF2933FL
VRF3933
VRF3933FL
VRF2944
VRF2944FL
VRF154FL
VRF157FL
VRF164FL
14
M113 / M174 / M177
M208
TO-247
S
D
S
S
G
S
TO-264
T1
T2
T2B
T3
T3A
T3C
T4
T4A
T5
Pout Freq.
(W) (MHz)
30
150
150
150
150
150
200
300
300
300
300
300
400
400
600
600
600
T14
175
175
175
175
175
150
175
175
150
150
150
150
150
150
30
30
30
Gain
typ
(dB)
16
13
14
14
14
11
25
16
25
25
28
28
25
25
17
21
21
Eff. Typ
(%)
VDD/BVDSS
(V)
50
45
50
50
50
50
50
55
50
50
60
60
50
50
45
45
45
65/170
28/80
65/170
50/140
100/250
65/170
65/170
65/170
65/170
65/170
100/250
100/250
65/170
65/170
65/170
65/170
65/170
Rthjc
(OC/W)
1.52
0.60
0.60
0.60
0.60
0.60
0.50
0.30
0.27
0.27
0.27
0.27
0.22
0.22
0.13
0.13
0.10
All Products RoHS Compliant
Package
Style
M113
M174
M174
M174
M174
M174
M177
M208
M177
T14
M177
T14
M177
T14
T2
T2
T2
Drivers and Driver-RF MOSFET Hybrids
The DRF1200/01/02/03 Hybrids integrate Driver, bypass capacitors and RF MOSFETS into a single package. Integration
maximizes amplifier performance by minimizing transmission line parasitics between the Driver and MOSFET. The DRF1300 or DRF1301
has two independent channels, each containing a Driver and RF MOSFET in a push pull configuration. The DRF1400A and B are half
bridge hybrids with symmetrically orientated leads so that the two can easily be configured into a full bridge converter. All DRF parts
feature a proprietary Anti-ring function to eliminate cross conduction in a Bridge or push-pull topologies. All DRF parts can be externally
selected in either an inverting or non-inverting configuration.
Part Number
Pout
(W)
Freq.
(MHz)
VDD/BVDSS
(V)
Package
Style
Class of
Operation
DRF1200
400
30
15/1000
T2B
D-E
DRF1201
600
30
15/1000
T2B
D-E
DRF1300
1000
30
15/500
T4
D-E
DRF1301
1000
30
15/1000
T4
D-E
DRF1400
1000
30
15/500
T4
D-E
DRF1211
600
30
15/500
T2B
D-E
DRF1410
1000
30
15/500
T4A
D-E
DRF1510
2000
30
15/500
T5
D-E
Reference Design Kits
DRF1200/CLASS-E, 13.56 MHz
DRF1200/CLASS-E, 27.12 MHz
The DRF1200/CLASS-E Single Ended RF Generator is a
reference design providing the designer the ability to
evaluate an 85% efficient 1000W CLASS-E RF Generator
DRF1300/CLASS-D, 13.56 MHz
The DRF1300/CLASS-D Push Pull RF Generator is a
reference design providing the designer the ability to
evaluate an 80% efficient 2000W CLASS-D RF Generator
DRF1400/CLASS-D, 13.56 MHz
The DRF1400/CLASS-D Half Bridge RF
Generator is a reference design providing
the designer the ability to evaluate an 85%
efficient 2500W CLASS- D RF Generator
All kits include: A fully populated board attached to an aluminum heat sink. An extensive application note explaining the theory of
operation with designer's recommendations for evaluation and board layout. All key waveforms are illustrated and described. A complete
parts list with recommended vendor part numbers and the board's Gerber file are provided for an easy transition into an end application.
New DRF1410 and DRF1510 Reference Designs Coming Soon
Datasheets available on www.microsemi.com
15
All Products RoHS Compliant EXCLUDING Reference Design Kits
Power Modules Contents
IGBT Power Modules
POWER MODULE INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17-21
CHOPPER AND PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3 PHASE BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
TRIPLE DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
FULL & ASYMMETRICAL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SINGLE SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SINGLE SWITCH + SERIES DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Intelligent Power Modules
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
MOSFET Power Modules
BOOST and BUCK CHOPPER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE + SERIES AND PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . . . . . . . .
ASYMMETRICAL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG + SERIES AND PARALLEL DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG + SERIES DIODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TRIPLE DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE SWITCH + SERIES DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE SWITCH + SERIES AND PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . . . . . .
INTERLEAVED PFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE AND DUAL LINEAR MOSFET. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26
26
27
27
27
28
28
28
28
29
29
29
29
29
29
30
RENEWABLE ENERGY Power Modules
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PFC + BYPASS DIODE + PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PFC + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PFC + BYPASS DIODE + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SECONDARY FAST RECTIFIER + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOST BUCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3- LEVEL NPC INVERTER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T-TYPE 3-LEVEL INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30
30
30
30
30
31
31
31
SiC Diode Power Modules
DUAL DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
IGBT + SiC Diode Power Modules
BOOST CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
MOSFET + SiC Diode Power Modules
SINGLE SWITCH + SERIES FRED AND SiC PARALLEL DIODES. . . . . . . . . . . . . . . . . .
CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG + SERIES FRED AND SiC PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE + SERIES FRED AND SiC PARALLEL DIODES . . . . . . . . . . . . . . . . . . . .
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
33
33
33
33
33
SiC MOSFET Power Modules
T-TYPE 3-LEVEL INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-LEVEL NPC INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOST CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BUCK CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
34
34
34
34
34
34
34
Diode Power Modules
SINGLE DIODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-PHASE BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COMMON CATHODE - COMMON ANODE - DOUBLER. . . . . . . . . . . . . . . . . . . . . . .
35
35
35
35
Package Outlines Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36-39
16
Microsemi combines a formidable array of technologies in semiconductors, packaging and automated manufacturing to produce a wide range of high quality modules
optimized for:
• Reliability
• Efficiency and electrical performance
• Low cost
• Space savings
• Reduced assembly time
The readily available standard module product line spans a wide selection of circuit
topologies, semiconductors including Silicon Carbide, voltage and current ratings
and packages. If you need even more flexibility or intellectual property protection,
Microsemi can often customize a standard module with low set up cost and with
a short lead time. Unique requirements can be met with Application Specific Power
Modules (ASPM®).
Microsemi serves a broad spectrum of industrial applications for Welding, Solar,
Induction Heating, Medical, UPS, Motor Control and SMPS markets as well as
HI-REL applications for Semicap, Defense and Aerospace markets. A wide selection
of construction materials enables Microsemi to manufacture with short lead times
modules that feature:
• Extended temperature range: -60°C to +200°C
• High reliability
• Reduced size and weight
• Hi-Rel testing and screening options
Microsemi's experience and expertise in power electronic conversion brings the
most effective technical support for your new development.
• Isolated gate driver
• Snubbers
• Mix & match semiconductors
• Short circuit protection
• Temperature & current sensing
• Parameter binning
Standard Electrical Configurations
Microsemi offers a wide range of standard electrical configurations housed in a variety of packages to match your specific need for
high power density and performance. Various semiconductor types are offered in the same topology.
Electrical Topology
IGBT
600V to 1700V
MOSFET
75V to 1200V
Asymmetrical Bridge
X
X
Boost Buck
X
X
Boost & Buck Chopper
X
X
Diode
200V to 1700V
Common Anode
X
Common Cathode
X
Dual Boost & Buck Chopper
X
X
Dual Common Source
X
X
Mix Si-SiC
600 & 1200V
Full SiC
600 to 1700V
X
X
X
Dual Diode
X
Full Bridge
X
X
Full Bridge + PFC
X
X
X
Full Bridge + Secondary Fast Rectifier Bridge
X
X
X
X
X
Full Bridge + Series and Parallel Diodes
Interleaved PFC
X
X
X
X
Linear single and Dual switch
X
Phase Leg
X
Phase Leg Intelligent
X
X
X
X
Phase Leg + PFC
X
X
Phase Leg + Series and Parallel Diodes
X
X
Single Switch
X
X
Single Switch + Series and Parallel Diodes
X
X
Single Switch + Series Diodes
X
3-Level NPC Inverter
X
3-Level T-Type Inverter
X
3-Phase Bridge
X
Triple Dual Common Source
X
X
Triple Phase Leg
X
X
X
X
X
X
X
X
X
X
Trench3
MOSFET
FRED
IGBT Trench4
FREDFET
Std Rectifier
MOSFET
Trench4 Fast
CoolMOS
Diode
Trench5
17
Diode
MOSFET
Packaging
Improved Low Profile Packages
SP1 (12mm)
SP3F (12mm)
SP4 (17mm)
SP6 (17mm)
SP6-P (12mm)
SP3F
SP4
SP6
SP6-P
SOT-227
SP2
D3
D4
SM2
SM2-1
SM3
SM3-1
SP1
Industry Standard Packages
SOT-227 (Isotop®)
SP2 (17mm)
34mm & 62mm Types
D1 (34 mm Wide)
D3 (62 mm Wide)
D4 (62 mm Wide)
Package Advantages
SP6 - SP
APTmodule
MODULE
12 mm
ISOTOP ®
30 mm
SP1 package:
-Replaces 2 SOT-227 parts
-Improved assembly time and cost
-Height compatible with SOT-227
-Copper base plate
17 mm
SP3F package:
SP6 package:
SP6-P package:
-Replaces up to 4 SOT-227 parts
-Reduced assembly time and cost
-Height compatible with SOT-227
-Copper base plate
Offers the same footprint and the same
pinout location as the popular 62mm
package but with lower height, leading to:
- Reduced stray inductance
- Reduced parasitic resistance
- Higher efficiency at high frequency
-Replaces up to 6 SOT-227 parts
-Height compatible with SOT-227
-Low inductance solder pins
-High current capability
18
Custom Power Modules
Microsemi PMP has created the Application Specific Power Module (ASPM) concept and has been offering customized power modules since 1983. Microsemi PMP offers a
complete engineered solution with mix and match capabilities in term of package, configuration, performance and cost.
Package
Standard or Custom
Ensure environmental protection and
mechanical robustness
Internal Printed Circuit Board
Not available in all modules.
Used to route gate signals tracks to small
signal terminals
Used to mount gate circuit and protection in
case of intelligent power module
Power Semiconductor Die
IGBT, MOSFET, Diode, SiC, Thyristor,
Switching devices soldered to the
substrates and connected by ultrasonic
Al wire bonds
Terminals
Screw on or Solder pins
Provides the user with power and signal
connections with minimum parasitic
resistance and inductance
Base Plate
Improve the heat transfer to the heat sink
Copper for good thermal transfer
AlSiC, CuW, CuMoCu for improved
reliability
Substrates
Al2O3, AlN, Si3N4
Provide isolation and good heat
transfer to the base plate
3 levels of customization are proposed offering different cost and low volume entry:
Change Options:
Die
Substrate
Base plate
Plastic lid
Terminals
NRE level
Elect./thermal performance
Die P/N
Material
Material
-
-
None to low
Elect./thermal performance
+ electrical configuration
Die P/N
Material & Layout
Material
-
-
Low to medium
Elect./thermal performance
+ electrical configuration
+ module housing
Die P/N
Material & Layout
Material & Shape
Material & Shape
Shape
Medium to high
Microsemi PMP power modules are made of different sub-elements. Most of them are standard and can be re-used to build infinite solutions for the end user.
Microsemi PMP offers optimum development cost and cycle time thanks to long term experience and wide range of available technologies.
Power Modules Features
Customer Benefits
High Power Density
Size and cost reduction
Isolated and highly thermally conductive substrate
Excellent thermal management
Internal wiring
Reduced external hardware
Minimum parasitics
Improved performance
Minimum output terminals
Reduced assembly time
Mix & match components
Optimizes losses
Full engineered solutions
Easy upgrade/less parts counts/short time to market/IP protection
FLEXIBILITY
PACKAGING CAPABILITY
Great level of integration
Mix of Silicon within the same package
No quantity limitation
Standard and custom packages
Standard and custom terminals
Various substrate technologies
TECHNOLOGY
RELIABILITY
Application oriented
Coefficient of thermal expansion matching
APPLICATIONS
Solar - Welding - Plasma Cutting - Semicap - MRI & X-Ray - EV/HEV - Induction Heating - UPS - Motor control - Data Communication
19
MOQ
5 to 10
pieces
Rugged Custom Power Modules
Various solutions are proposed offering different cost and low volume of entry:
Microsemi PMP has acquired a great experience and
know-how in module customization to address rugged
and wide temperature range application and offers
solution to meet with next generation integrated
power systems expectation in terms of:
• Improved Reliability
• Wider Operating Temperatures
• Higher Power
• Higher Efficiency
• Lower Weight and Size
• Lower Cost
Applications
• Avionics actuation system
• Avionics lift and pump
• Military ground vehicle
• power supply and motor control
• Navy ship auxiliary power supply
• Down hole drilling
Test Capabilities
• X-Ray inspection
• Dielectric test (up to 6KV)
• Electrical testing at specified temperature
• Burn-in
• Acoustic imaging
Reliability Testing Capabilities
• Power cycling
• Hermetic sealing
• Moisture
• Salt atmosphere
• HTGB
• Temperature shock
• HAST
• H3TRB
• Altitude
• Mechanical shock, vibration
Expertise Capabilities
• Cross-sectioning
• Structural analysis
All tests can be conducted upon demand by sampling or
at 100%. Tests performed in house or with external lab.
Industrial
Application
Extended
Temperature
Application
No NRE
Low Volume Entry
Standard Module
X
Modified Standard
X
X
Custom Module
X
X
DBC
Solder
Substrate Joint
Harsh
Environment
Application
Low NRE
Low Volume Entry
X
Medium to High NRE
Low Volume Entry
Dice
Solder
Joint
Module performance and
reliability depends on the choice
of the assembly materials
Base
Plate
CTE Thermal
Rthjc
(ppm/K) conductivity (K/W)
(W/m.K)
Silicon Die (120 mm2)
4
136
Cu/Al2O3
17/7 390/25 0.35
AlSiC/Al2O3
7/7
170/25
0.38
Cu/AlN
17/5
390/170
0.28
AlSiC/AlN
7/5
170/170
0.31
AlSiC/Si3N4
7/3
170/60
0.31
More closely matched materials TCE’s increase the
module life time because it will result in much less
stress at the interface of the materials and inside the
materials.
Material
CTE Thermal
Density
(ppm/K) conductivity (g/cc)
(W/m.K)
CuW
6.5
190
17
Base plate AlSiC 7
170 2.9
Cu
17
390 8.9
Al2O37 25 Substrate AlN
5
170
Si3N43 60 4
136
DieSi
SiC 2.6 270
-
Another important feature is the material density
particularly for the baseplate. Taking copper as the
reference, AlSiC has a density of 1/3 while CuW
has twice the density. Therefore AlSiC will provide
substantial weight reduction at the same time as
reliability increase.
Our Core Competencies
• Extensive experience of rugged solutions for
harsh environments
• Wide range of Silicon technologies
• Wafer fab capabilities
• Mix of assembly technologies
• Hermetic and robust plastic packages
• Custom test & burn-in solutions
• ISO9001 certified
• End-of-life (obsolescence) management
• Thermal management
• Material expertise
• Product life management associated to risks
analysis
20
The higher the thermal conductivity, the lower is the
junction to case thermal resistance and the lower
will be the delta of junction temperature of the
device during operation such that the effect of power
cycling on the dice will be minimized.
Power Module Part Numbering System
IGBT Modules MOSFET Modules Diode Modules
APTGL 475 A 120 T D3 G
APT C 60 DAM24 T 1 G
APTDR 90 X 160 1 G
I
II
I
Trade Mark
IGBT Type:
GL = TRENCH 4
GLQ = High speed Trench 4
GT = TRENCH 3
GTQ = TRENCH 5
GV = Mix NPT/TRENCH
CV = Mix TRENCH/CoolMOS
Current:
Ic @ Tc=80°C
Topology:
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
HR = T-Type 3-Level
SDA = Double Boost + Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level
U = Single Switch
VDA = Interleaved PFC
X = Three Phase Bridge
Blocking Voltage:
60 = 600V
120 = 1200V
170 = 1700V
Option:
A = AIN Substrate
C = SiC Diode
D = Series Diode
T = Temperature Sensor
W = Clamping Parallel Diode
Package:
1 = SP1
2 = SP2
3 = SP3F
P = SP6-P D3 = D3 (62mm)
D4 = D4 (62mm)
G = RoHS Compliant
II
III
IV
V
VI
VII
VIII
III IV V VI VII VIII
I
II
I
Trade Mark
II
MOSFET Type:
MC - SM = MOSFET SiC
M = MOSFET
C = CoolMOS
III
Blocking Voltage:
08 = 75V
10 = 100V
20 = 200V
50 = 500V
60 = 600V
IV
III IV V VIVIIVIII
80 = 800V
90 = 900V
100 = 100V
120 = 120V
Topology:
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
HR = T-Type 3-Level
SDA = Double Boost + Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level NPC
U = Single Switch
VDA = Interleaved PFC
V
RDSON @ Tc=25°C
240 = 2400mΩ
24 = 240mΩ
M24 = 24mΩ
VI
Option:
A = AlN Substrate
C = SiC Diode
D = Series Diode
F = FREDFET
S = Series and Parallel Diodes
T = Temperature Sensor
U = Ultrafast FREDFET
VII
Package:
1 = SP1
2 = SP2
3 = SP3F
P = SP6-P
VIII
G = RoHS Compliant
I
II III IV V VIVII
I
Trade Mark
II
Diode Type:
DF = FRED
DR = Standard Rectifier
DC = SiC
DSK = Schottky
III
Current:
IF @ Tc=80°C
IV
Topology:
AA = Dual Common Anode
BB = Boost Buck
AK = Dual Series
KK = Dual Common Cathode
H = Single Phase Bridge
U = Single Switch
X = Three Phase Bridge
V
Blocking Voltage:
20 = 200V
40 = 400V
60 = 600V
100 = 1000V
120 = 1200V
160 = 1600V
170 = 1700V
VI
Package:
1 = SP1
3 = SP3F
VII
G = RoHS Compliant
Optional Materials
Optional materials are available upon demand on most of the
A
listed standard power modules. Options are indicated with a
M
letter in the suffix of the module part number. Temperature
T
C
Sensor Option is indicated in the catalog with "YES" or
N
"option" when available on standard part or on demand.
E
21
AIN Substrate for higher thermal conductivity
AlSiC Base plate material for improved temperature cycling capabilities
Temperature Sensor (NTC or PTC) for Case Temperature information
SiC Diode for higher efficiency
Si3N4 Substrate
Press fit terminals (for SP3F package only)
IGBT Power Modules
CHOPPER AND PHASE LEG
VCES
(V)
IGBT
Type
600
TRENCH3
650
TRENCH 4 FAST
650
TRENCH 5
1200
TRENCH 3
TRENCH 4
1200
TRENCH 4 FAST
1700
TRENCH 3
IC (A)
VCE (on)(V)
Package
TC=80º C at rated Ic
75
100
100
150
150
200
200
300
300
300
400
450
600
100
600
60
120
35
35
50
50
50
50
75
75
75
75
100
100
100
100
100
150
150
150
200
200
300
300
400
400
40
90
180
180
325
475
700
100
400
30
50
50
75
100
150
200
225
300
300
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.85
1.65
1.65
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.85
1.85
1.85
1.85
1.85
1.85
1.85
2.05
2.05
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
SP1
SP1
SP2
SP1
SP3F
SP2
SP3F
SP4
SP6
D3
D3
SP6
SP6
SP1
SP6
SP1
SP3F
SP1
SOT227
SOT227
SP1
SP2
SP4
SOT227
SP1
SP2
SP4
SP1
SOT227
SP2
SP3F
SP4
SP6
SP3F
SP4
SP6
D3
SP6
D3
SP6
D3
SOT227
SP1
SP2
SP3F
D3
D3
D3
SP3F
SP6
SP1
SP1
SP4
SP1
SP4
SP6
D3
SP6
SP6
D3
SOT-227
NTC
YES
YES
YES
YES
YES
YES
option
option
option
option
option
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
option
YES
YES
option
option
option
option
option
option
YES
YES
option
option
option
YES
YES
YES
YES
YES
YES
YES
option
option
option
option
option
…DA... or ...U2
APTGT75DA60T1G
APTGT100DA60T1G
N/A
APTGT150DA60T1G
N/A
N/A
APTGT200DA60T3AG
N/A
APTGT300DA60G
APTGT300DA60D3G
APTGT400DA60D3G
APTGT450DA60G
APTGT600DA60G
N/A
N/A
APTGTQ100DA65T1G
APTGTQ200DA65T3G
N/A
APT35GT120JU2
APT50GT120JU2
N/A
N/A
APTGT50DA120TG
APT75GT120JU2
N/A
N/A
APTGT75DA120TG
APTGT100DA120T1G
APT100GT120JU2
N/A
N/A
N/A
APTGT150DA120G
N/A
N/A
APTGT200DA120G
APTGT200DA120D3G
APTGT300DA120G
APTGT300DA120D3G
APTGT400DA120G
N/A
APT40GL120JU2
APTGL90DA120T1G
N/A
N/A
APTGL325DA120D3G
APTGL475DA120D3G
APTGL700DA120D3G
N/A
N/A
APTGT30DA170T1G
APTGT50DA170T1G
APTGT50DA170TG
APTGT75DA170T1G
APTGT100DA170TG
APTGT150DA170G
APTGT200DA170D3G
APTGT225DA170G
APTGT300DA170G
APTGT300DA170D3G
22
...SK... or ...U3
APTGT75SK60T1G
APTGT100SK60T1G
N/A
APTGT150SK60T1G
N/A
N/A
APTGT200SK60T3AG
N/A
APTGT300SK60G
APTGT300SK60D3G
APTGT400SK60D3G
APTGT450SK60G
APTGT600SK60G
N/A
N/A
APTGTQ100SK65T1G
APTGTQ200SK65T3G
N/A
APT35GT120JU3
APT50GT120JU3
N/A
N/A
APTGT50SK120TG
APT75GT120JU3
N/A
N/A
APTGT75SK120TG
N/A
APT100GT120JU3
N/A
N/A
N/A
APTGT150SK120G
N/A
N/A
APTGT200SK120G
APTGT200SK120D3G
APTGT300SK120G
APTGT300SK120D3G
APTGT400SK120G
N/A
APT40GL120JU3
APTGL90SK120T1G
N/A
N/A
APTGL325SK120D3G
APTGL475SK120D3G
APTGL700SK120D3G
N/A
N/A
APTGT30SK170T1G
APTGT50SK170T1G
APTGT50SK170TG
N/A
APTGT100SK170TG
APTGT150SK170G
APTGT200SK170D3G
APTGT225SK170G
APTGT300SK170G
APTGT300SK170D3G
…A...
APTGT75A60T1G
APTGT100A60T1G
APTGT100A602G
APTGT150A60T1G
APTGT150A60T3AG
APTGT200A602G
APTGT200A60T3AG
APTGT300A60TG
APTGT300A60G
APTGT300A60D3G
APTGT400A60D3G
APTGT450A60G
APTGT600A60G
APTGLQ100A65T1G
APTGLQ600A65T6G
APTGTQ100A65T1G
APTGTQ200A65T3G
APTGT35A120T1G
N/A
N/A
APTGT50A120T1G
APTGT50A1202G
N/A
N/A
APTGT75A120T1G
APTGT75A1202G
N/A
N/A
N/A
APTGT100A1202G
APTGT100A120T3AG
APTGT100A120TG
APTGT150A120G
APTGT150A120T3AG
APTGT150A120TG
APTGT200A120G
APTGT200A120D3G
APTGT300A120G
APTGT300A120D3G
APTGT400A120G
APTGT400A120D3G
N/A
APTGL90A120T1G
APTGL180A1202G
APTGL180A120T3AG
APTGL325A120D3G
APTGL475A120D3G
N/A
APTGLQ100A120T3AG
APTGLQ400A120T6G
APTGT30A170T1G
APTGT50A170T1G
APTGT50A170TG
N/A
APTGT100A170TG
APTGT150A170G
APTGT200A170D3G
APTGT225A170G
APTGT300A170G
APTGT300A170D3G
SP1
NEW!
NEW!
SP2
SP3F
SP4
SP6
D3
All Power Modules RoHS Compliant
IGBT Power Modules
3 PHASE BRIDGE
VCES
(V)
IGBT
Type
600
TRENCH 3
TRENCH 3
1200
TRENCH 4
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
30
50
75
25
35
40
1.5
1.5
1.5
1.7
1.7
1.85
SP3F
SP3F
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
YES
YES
APTGT30X60T3G
APTGT50X60T3G
APTGT75X60T3G
APTGT25X120T3G
APTGT35X120T3G
APTGL40X120T3G
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
50
75
150
30
90
75
100
120
1.5
1.5
1.5
1.65
1.65
1.7
1.7
1.85
SP6-P
SP6-P
SP6-P
SP3F
SP6P
SP6-P
SP6-P
SP6-P
option
option
option
YES
YES
option
YES
YES
APTGT50TA60PG
APTGT75TA60PG
APTGT150TA60PG
APTGTQ50TA65T3G
APTGTQ150TA65TPG
APTGT75TA120PG
APTGT100TA120TPG
APTGL120TA120TPG
TRIPLE PHASE LEG
VCES
(V)
IGBT
Type
600
TRENCH 3
650
TRENCH 5
TRENCH 3
1200
TRENCH 4
SP3F
NEW!
NEW!
SP4
TRIPLE DUAL COMMON SOURCE
VCES
(V)
IGBT
Type
600
TRENCH 3
TRENCH 3
TRENCH 4
TRENCH 3
1200
1700
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
50
75
100
150
75
120
50
1.5
1.5
1.5
1.5
1.7
1.85
2.0
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
option
option
option
option
option
YES
option
APTGT50TDU60PG
APTGT75TDU60PG
APTGT100TDU60PG
APTGT150TDU60PG
APTGT75TDU120PG
APTGL120TDU120TPG
APTGT50TDU170PG
SP6-P
DUAL CHOPPER
VCES
(V)
IGBT
Type
600
TRENCH 3
650
TRENCH 5
TRENCH 3
1200
TRENCH 4
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
50
75
60
50
60
90
1.5
1.5
1.65
1.7
1.85
1.85
SP3F
SP3F
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
YES
YES
...DDA...
APTGT50DDA60T3G
APTGT75DDA60T3G
APTGTQ100DDA65T3G
APTGT50DDA120T3G
APTGL60DDA120T3G
APTGL90DDA120T3G
23
...DSK...
APTGT50DSK60T3G
APTGT75DSK60T3G
N/A
APTGT50DSK120T3G
APTGL60DSK120T3G
APTGL90DSK120T3G
NEW!
All Power Modules RoHS Compliant
IGBT Power Modules
FULL & ASYMMETRICAL BRIDGE
VCES
(V)
600
650
650
IGBT
Type
TRENCH 3
TRENCH 4
FAST
TRENCH 5
TRENCH 3
1200
TRENCH 4
TRENCH 4
FAST
1700
TRENCH 3
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
20
30
50
50
50
75
75
75
100
100
150
200
300
75
300
60
35
50
50
75
75
100
100
150
200
40
60
90
40
75
200
30
50
100
150
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.85
1.65
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.85
1.85
1.85
2.05
2.05
2.05
2.0
2.0
2.0
2.0
SP1
SP1
SP1
SP2
SP3F
SP1
SP2
SP3F
SP4
SP3F
SP4
SP6
SP6
SP1
SP6
SP3F
SP3F
SP3F
SP4
SP3F
SP4
SP4
SP6
SP6
SP6
SP1
SP3F
SP3F
SP1
SP3F
SP6
SP3F
SP4
SP6
SP6
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
option
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
option
YES
YES
-
SP1
...H...
APTGT20H60T1G
APTGT30H60T1G
APTGT50H60T1G
APTGT50H60T2G
APTGT50H60T3G
APTGT75H60T1G
APTGT75H60T2G
APTGT75H60T3G
APTGT100H60TG
APTGT100H60T3G
APTGT150H60TG
APTGT200H60G
APTGT300H60G
APTGLQ75H65T1G
APTGLQ300H65G
APTGTQ100H65T3G
APTGT35H120T3G
APTGT50H120T3G
APTGT50H120TG
N/A
APTGT75H120TG
N/A
APTGT100H120G
APTGT150H120G
APTGT200H120G
APTGL40H120T1G
APTGL60H120T3G
APTGL90H120T3G
APTGLQ40H120T1G
APTGLQ75H120T3G
APTGLQ200H120G
APTGT30H170T3G
APTGT50H170TG
APTGT100H170G
APTGT150H170G
...DH...
N/A
N/A
APTGT50DH60T1G
N/A
N/A
APTGT75DH60T1G
N/A
N/A
APTGT100DH60TG
APTGT100DH60T3G
APTGT150DH60TG
APTGT200DH60G
APTGT300DH60G
N/A
N/A
N/A
N/A
APTGT50DH120T3G
APTGT50DH120TG
APTGT75DH120T3G
APTGT75DH120TG
APTGT100DH120TG
N/A
APTGT150DH120G
APTGT200DH120G
N/A
APTGL60DH120T3G
APTGL90DH120T3G
N/A
N/A
N/A
N/A
APTGT50DH170TG
APTGT100DH170G
APTGT150DH170G
SP2
NEW!
SP3F
SP4
SP6 Full Bridge
24
All Power Modules RoHS Compliant
IGBT Power Modules
SINGLE SWITCH
VCES
(V)
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
600
TRENCH 3
750
400
600
475
700
400
600
1.5
1.7
1.7
1.85
1.85
2.0
2.0
D4
D4
D4
D4
D4
D4
D4
-
APTGT750U60D4G
APTGT400U120D4G
APTGT600U120D4G
APTGL475U120D4G
APTGL700U120D4G
APTGT400U170D4G
APTGT600U170D4G
TRENCH 3
1200
TRENCH 4
1700
TRENCH 3
D4
SINGLE SWITCH + SERIES DIODE
VCES
(V)
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
1200
TRENCH 4
475
1.85
SP6
-
APTGL475U120DAG
DUAL COMMON SOURCE
VCES
(V)
IGBT
Type
600
TRENCH 3
1200
TRENCH 3
1700
TRENCH 3
SP4
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
100
200
300
600
50
75
100
150
150
200
300
400
100
225
300
1.5
1.5
1.4
1.4
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
2.0
2.0
2.0
SP4
SP4
SP6
SP6
SP4
SP4
SP4
SP6
SP4
SP6
SP6
SP6
SP4
SP6
SP6
YES
YES
YES
YES
YES
YES
YES
-
APTGT100DU60TG
APTGT200DU60TG
APTGT300DU60G
APTGT600DU60G
APTGT50DU120TG
APTGT75DU120TG
APTGT100DU120TG
APTGT150DU120G
APTGT150DU120TG
APTGT200DU120G
APTGT300DU120G
APTGT400DU120G
APTGT100DU170TG
APTGT225DU170G
APTGT300DU170G
SP6
Intelligent Power Modules
PHASE LEG
VCES
(V)
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
600
TRENCH 3
TRENCH 3
TRENCH 4
400
300
325
1.5
1.7
1.8
LP8
LP8
LP8
-
APTLGT400A608G
APTLGT300A1208G
APTLGL325A1208G
1200
LP8
25
All Power Modules RoHS Compliant
MOSFET Power Modules
CHOPPER
VDSS
(V)
100
MOSFET
Type
MOS 5
MOS 5
200
MOS 7
MOS 5
500
MOS 7
600
CoolMOS
900
CoolMOS
MOS 8
1000
1200
MOS 7
MOS 8
MOS8
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
11
4.5
2.25
22
8
5
4
100
100
75
19
17
65
70
24
120
60
180
90
330
300
100
207
370
71
147
250
300
30
30
32
125
140
43
40
70
25
44
33
59
17
23
SOT-227
SP4
SP6
SOT-227
SP4
SP6
SP6
SOT-227
SOT-227
SOT-227
SP6
SP6
SOT-227
SOT-227
SP1
SOT-227
SP1
SP4
SP6
SP1
SP1
NTC
SOT-227
YES
YES
option
option
option
option
YES
YES
YES
option
YES
YES
DA...or...U2
SK...or...U3
APT10M11JVRU2
APTM10DAM05TG
APTM10DAM02G
APT20M22JVRU2
APTM20DAM08TG
APTM20DAM05G
APTM20DAM04G
APT5010JVRU2
APT5010JLLU2
APT50M75JLLU2
APTM50DAM19G
APTM50DAM17G
APT58M50JU2
APT40N60JCU2
APTC60DAM24T1G
APT33N90JCU2
APTC90DAM60T1G
APTM100DA18TG
APTM100DAM90G
APTM100DA33T1G
APTM120DA30T1G
APT10M11JVRU3
APTM10SKM05TG
APTM10SKM02G
APT20M22JVRU3
APTM20SKM08TG
APTM20SKM05G
APTM20SKM04G
APT5010JVRU3
APT5010JLLU3
APT50M75JLLU3
APTM50SKM19G
APTM50SKM17G
APT58M50JU3
APT40N60JCU3
APTC60SKM24T1G
APT33N90JCU3
APTC90SKM60T1G
APTM100SK18TG
APTM100SKM90G
APTM100SK33T1G
N/A
MOSFET
Type
100
MOS 5
500
MOS 7
600
CoolMOS
800
1000
CoolMOS
MOS 7
SP3F
SP4
SP6
DUAL CHOPPER
VDSS
(V)
SP1
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
19
9
100
65
45
70
35
24
150
350
50
100
24
37
38
29
54
70
21
17
SP3F
SP3F
SP3F
SP3F
SP1
SP1
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
26
...DDA...
...DSK...
APTM10DDAM19T3G
APTM10DDAM09T3G
APTM50DDA10T3G
APTM50DDAM65T3G
APTC60DDAM45T1G
APTC60DDAM70T1G
APTC60DDAM35T3G
APTC60DDAM24T3G
APTC80DDA15T3G
APTM100DDA35T3G
APTM10DSKM19T3G
APTM10DSKM09T3G
APTM50DSK10T3G
APTM50DSKM65T3G
APTC60DSKM45T1G
APTC60DSKM70T1G
APTC60DSKM35T3G
APTC60DSKM24T3G
APTC80DSK15T3G
APTM100DSK35T3G
MOSFET Power Modules
FULL BRIDGE
VDSS
(V)
MOSFET
Type
100
FREDFET 5
200
FREDFET 7
500
FREDFET 7
FREDFET 8
600
CoolMOS
FREDFET 8
800
CoolMOS
900
CoolMOS
1000
1200
FREDFET 7
FREDFET 8
FREDFET 7
FREDFET 8
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
4.5
19
9
20
16
10
8
140
100
75
75
65
65
38
35
150
70
45
83
70
35
24
230
150
290
150
120
60
450
350
350
180
460
290
1400
207
50
100
62
74
125
147
18
24
32
32
37
37
64
70
19
29
38
21
29
54
70
15
21
11
21
23
44
14
17
17
33
14
25
6
SP6
SP3F
SP3F
SP4
SP4
SP6
SP6
SP3F
SP3F
SP4
SP3F
SP4
SP3F
SP6
SP6
SP1
SP1
SP1
SP2
SP3F
SP3F
SP3F
SP1
SP1
SP3F
SP3F
SP1
SP3F
SP3F
SP4
SP3F
SP6
SP3F
SP6
SP1
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
APTM10HM05FG
APTM10HM19FT3G
APTM10HM09FT3G
APTM20HM20FTG
APTM20HM16FTG
APTM20HM10FG
APTM20HM08FG
APTM50H14FT3G
APTM50H10FT3G
APTM50HM75FTG
APTM50HM75FT3G
APTM50HM65FTG
APTM50HM65FT3G
APTM50HM38FG
APTM50HM35FG
APTM50H15FT1G
APTC60HM70T1G
APTC60HM45T1G
APTC60HM83FT2G
APTC60HM70T3G
APTC60HM35T3G
APTC60HM24T3G
APTM60H23FT1G
APTC80H15T1G
APTC80H29T3G
APTC80H15T3G
APTC90H12T1G
APTC90HM60T3G
APTM100H45FT3G
APTM100H35FTG
APTM100H35FT3G
APTM100H18FG
APTM100H46FT3G
APTM120H29FG
APTM120H140FT1G
SP1
SP2
SP3F
SP4
SP6
FULL BRIDGE + SERIES AND PARALLEL DIODES
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
200
500
1000
MOS 7
MOS 7
MOS 7
20
75
450
62
32
13
SP4
SP4
SP4
YES
YES
YES
APTM20HM20STG
APTM50HM75STG
APTM100H45STG
ASYMMETRICAL BRIDGE
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
100
MOS5
200
MOS 7
4.5
16
8
38
65
24
207
77
147
64
32
70
SP6
SP3F
SP6
SP6
SP3F
SP3F
YES
YES
YES
APTM10DHM05G
APTM20DHM16T3G
APTM20DHM08G
APTM50DHM38G
APTM50DHM65T3G
APTC60DHM24T3G
500
600
MOS 7
MOS 8
CoolMOS
“CoolMOSTM” is a trademark of Infineon Technologies AG.
27
All Power Modules RoHS Compliant
MOSFET Power Modules
PHASE LEG
VDSS
(V)
MOSFET
Type
100
FREDFET 5
200
FREDFET 7
500
FREDFET 7
600
CoolMOS
FREDFET 8
900
1000
CoolMOS
FREDFET 7
FREDFET 8
1200
FREDFET 7
FREDFET 8
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
4.5
2.25
10
8
5
4
38
35
19
17
45
42
35
24
24
110
60
60
180
90
400
290
150
650
207
370
125
147
250
300
64
70
125
140
38
40
54
70
70
30
44
44
33
59
16
25
45
12
SP4
SP6
SP4
SP4
SP6
SP6
SP4
SP4
SP6
SP6
SP1
SP2
SP1
SP1
SP2
SP1
SP1
SP2
SP4
SP6
SP1
SP4
SP6
SP1
YES
option
YES
YES
option
option
YES
YES
option
option
YES
YES
YES
YES
YES
YES
option
YES
YES
option
YES
APTM10AM05FTG
APTM10AM02FG
APTM20AM10FTG
APTM20AM08FTG
APTM20AM05FG
APTM20AM04FG
APTM50AM38FTG
APTM50AM35FTG
APTM50AM19FG
APTM50AM17FG
APTC60AM45T1G
APTC60AM42F2G
APTC60AM35T1G
APTC60AM24T1G
APTC60AM242G
APTM60A11FT1G
APTC90AM60T1G
APTC90AM602G
APTM100A18FTG
APTM100AM90FG
APTM100A40FT1G
APTM120A29FTG
APTM120A15FG
APTM120A65FT1G
SP1
SP2
PHASE LEG + SERIES AND PARALLEL DIODES
VDSS
(V)
MOSFET
Type
200
MOS 7
500
MOS 7
1000
MOS 7
1200
MOS 7
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
10
6
38
24
230
130
200
125
225
64
110
26
49
37
SP4
SP6
SP4
SP6
SP4
SP6
SP6
YES
YES
YES
-
APTM20AM10STG
APTM20AM06SG
APTM50AM38STG
APTM50AM24SG
APTM100A23STG
APTM100A13SG
APTM120A20SG
SP4
PHASE LEG + SERIES DIODES
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
1000
1200
MOS 7
MOS 7
130
200
49
37
SP6
SP6
-
APTM100A13DG
APTM120A20DG
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
4.2
19
9
16
65
35
24
150
60
350
90
50
100
74
37
54
70
21
44
17
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
option
option
option
option
option
option
YES
option
YES
option
APTM08TAM04PG
APTM10TAM19FPG
APTM10TAM09FPG
APTM20TAM16FPG
APTM50TAM65FPG
APTC60TAM35PG
APTC60TAM24TPG
APTC80TA15PG
APTC90TAM60TPG
APTM100TA35FPG
SP6
TRIPLE PHASE LEG
VDSS
(V)
75
MOSFET
100
FREDFET 5
200
500
FREDFET 7
FREDFET 7
600
CoolMOS
800
900
1000
CoolMOS
CoolMOS
FREDFET 7
“CoolMOSTM” is a trademark of Infineon Technologies AG.
28
SP6-P
All Power Modules RoHS Compliant
MOSFET Power Modules
TRIPLE DUAL COMMON SOURCE
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
100
600
800
1200
MOS 5
CoolMOS
CoolMOS
MOS 7
9
35
150
570
100
54
21
13
SP6-P
SP6-P
SP6-P
SP6-P
option
option
option
option
APTM10TDUM09PG
APTC60TDUM35PG
APTC80TDU15PG
APTM120TDU57PG
SP1
DUAL COMMON SOURCE
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
100
MOS 5
200
MOS 7
500
MOS 7
1000
1200
MOS 7
MOS 7
2.25
8
5
4
35
17
90
150
370
147
250
300
70
140
59
45
SP6
SP4
SP6
SP6
SP4
SP6
SP6
SP6
YES
YES
-
APTM10DUM02G
APTM20DUM08TG
APTM20DUM05G
APTM20DUM04G
APTM50DUM35TG
APTM50DUM17G
APTM100DUM90G
APTM120DU15G
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
2.25
1.5
3
9
60
45
70
430
640
434
371
97
160
126
SP6
SP6
SP6
SP6
SP6
SP6
SP6
option
option
option
option
option
option
option
APTM10UM02FAG
APTM10UM01FAG
APTM20UM03FAG
APTM50UM09FAG
APTM100UM60FAG
APTM100UM45FAG
APTM120UM70FAG
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
65
45
70
110
160
126
SP6
SP6
SP6
-
APTM100UM65DAG
APTM100UM45DAG
APTM120UM70DAG
SP3F
SINGLE SWITCH
VDSS
(V)
MOSFET
Type
100
FREDFET 5
200
500
FREDFET 7
FREDFET 7
1000
FREDFET 7
1200
FREDFET 7
SP4
SINGLE SWITCH + SERIES DIODE
VDSS
(V)
MOSFET
Type
1000
MOS 7
1200
MOS 7
SP6
SINGLE SWITCH + SERIES AND PARALLEL DIODES
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
200
500
1000
1200
MOS 7
MOS 7
MOS 7
MOS 7
4
13
65
100
310
250
110
86
SP6
SP6
SP6
SP6
option
option
option
option
APTM20UM04SAG
APTM50UM13SAG
APTM100UM65SAG
APTM120U10SAG
INTERLEAVED PFC
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
600
CoolMOS
45
24
38
70
SP1
SP3F
YES
YES
APTC60VDAM45T1G
APTC60VDAM24T3G
“CoolMOSTM” is a trademark of Infineon Technologies AG.
29
SP6-P
All Power Modules RoHS Compliant
MOSFET Power Modules
SINGLE AND DUAL LINEAR MOSFET
VDSS
(V)
100
200
500
600
1000
MOSFET
Type
MOS 5
MOSFET Linear
MOS 4 Linear
RDS (ON)
(mΩ)
Shunt
Resistor (mR)
9
18
90
125
600
4.4
10
20
20
20
Package
NTC
SP1
YES
YES
YES
YES
YES
SP1 or SP3F
APTML10UM09R004T1AG
APTML20UM18R010T1AG
APTML50UM90R020T1AG
APTML60U12R020T1AG
APTML100U60R020T1AG
APTML102UM09R004T3AG
APTML202UM18R010T3AG
APTML502UM90R020T3AG
APTML602U12R020T3AG
APTML1002U60R020T3AG
SP3F
Renewable Energy Power Modules
FULL BRIDGE
CoolMOS
or
Fast IGBT
VCES
(V)
Technology
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
600
Mix Trench IGBT
& CoolMOS
50
50
83mR/1.5
45mR/1.5
SP1
SP3F
YES
YES
APTCV40H60CT1G
APTCV50H60T3G
SP3F
PFC + BYPASS DIODE + PHASE LEG
VCES
(V)
600
SP1
Technology
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Special
Part Number
CoolMOS
38
38
27
27
45mR
45mR
83mR
83mR
SP1
SP1
SP1
SP1
N/A
N/A
N/A
N/A
10A PFC SiC diode
10A PFC SiC diode
-
APTC60AM45BC1G
APTC60AM45B1G
APTC60AM83BC1G
APTC60AM83B1G
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Special
Part Number
38
38
29
29
1.5/45mR
1.5/45mR
1.5/70mR
70mR
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
20A PFC SiC diode
-
APTCV60HM45BC20T3G
APTCV60HM45BT3G
APTCV60HM70BT3G
APTC60HM70BT3G
PFC + BYPASS DIODE + FULL BRIDGE
VCES
(V)
600
Technology
Mix Trench IGBT
& CoolMOS
CoolMOS
SECONDARY FAST RECTIFIER + FULL BRIDGE
VCES
(V)
600
Technology
Mix Trench IGBT
& CoolMOS
CoolMOS
TRENCH 3
“CoolMOSTM” is a trademark of Infineon Technologies AG.
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Special
Part Number
38
38
29
29
50
1.5/45mR
1.5/45mR
1.5/70mR
70mR
1.5
SP3F
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
YES
20A SiC antiparallel diode
-
APTCV60HM45RCT3G
APTCV60HM45RT3G
APTCV60HM70RT3G
APTC60HM70RT3G
APTGT50H60RT3G
30
Renewable Energy Power Modules
BOOST BUCK
VCES
(V)
600
600
Technology
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
70
100
24mR
1.5
SP3F
SP3F
YES
YES
APTC60BBM24T3G
APTGT100BB60T3G
CoolMOS
TRENCH 3
SP1
3-LEVEL NPC INVERTER
VCES
(V)
600
Technology
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
20
30
30
50
50
75
100
150
200
300
300
400
60
240
100
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.8
2.0
SP1
SP3F
SP1
SP3F
SP1
SP3F
SP3F
SP6
SP6
SP6
SP6
SP6
SP3F
SP6
SP6
YES
YES
YES
YES
-
YES
-
APTGT20TL601G
APTGT30TL60T3G
APTGT30TL601G
APTGT50TL60T3G
APTGT50TL601G
APTGT75TL60T3G
APTGT100TL60T3G
APTGT150TL60G
APTGT200TL60G
APTGT300TL60G
APTGT300TL65G
APTGT400TL65G
APTGL60TL120T3G
APTGL240TL120G
APTGT100TL170G
TRENCH 3
650
Trench 3
1200
TRENCH 4
1700
TRENCH 3
VCES
(V)
Technology
RDS (ON)
CoolMOS
(mΩ)
VCE (on) IGBT (V)
/ Ic (A)
Package
NTC
Part Number
600
Mix Trench IGBT
& CoolMOS
24
45
70
99
1.5/75
1.5/75
1.5/50
1.5/30
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
APTCV60TLM24T3G
APTCV60TLM45T3G
APTCV60TLM70T3G
APTCV60TLM99T3G
900
Mix Trench IGBT
& CoolMOS
120
1.85/50
SP3F
YES
APTCV90TL12T3G
SP3F
SP6 3-Level
T-TYPE 3-LEVEL INVERTER
VCES
(V)
Technology
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Special
Part Number
600/1200
TRENCH 4 FAST
40
80
200
2.05
2.05
2.05
SP3F
SP3F
SP6
YES
YES
NO
10A/600V SiC
30A/600V SiC
-
APTGLQ40HR120CT3G
APTGLQ80HR120CT3G
APTGLQ200HR120G
“CoolMOSTM” is a trademark of Infineon Technologies AG.
31
Power Modules with SiC Schottky Diodes
Applications:
Extremely fast switching of SiC
Schottky diode enables designs with: • PFC
• Output Rectification
• Improved System Efficiency
• Solar Inverter
• Higher Reliability
• Motor Control
• Lower System Switching Losses
• Snubber Diode
• Lower System Cost
Smaller EMI Filter
Smaller Magnetic Components
Smaller Heat-Sink
Smaller Switches, Eliminate Snubbers
• Reduced System Size
Fewer / Smaller Components
Operating Frequency vs Drain Current
400
Frequency (kHz)
Silicon Carbide (SiC) Schottky Diodes offer superior
dynamic and thermal performance over conventional
Silicon power diodes. The main advantages of the SiC
Schottky Diodes are:
• Essentially zero forward and reverse recovery = reduced switch and diode switching losses
• Temperature independent switching behavior = stable high temperature performance
• Positive temperature coefficient of VF = ease of
parallel operation
• Usable 175°C Junction Temperature = safely operate at higher temperatures
300
SiC diode
200
Si diode
100
0
10
20
30
40
50
60
Drain Current (A)
Diode Power Modules with SiC Diodes
DUAL DIODE
VRRM
(V)
DIODE Type
600
SiC
1200
SiC
IF (A)
TC=100º C
VF (V)
TJ=25º C
Package
20
30
40
50
60
20
40
50
60
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
Anti-Parallel
Parallel
APT2X20DC60J
APT2X30DC60J
APT2X40DC60J
APT2X50DC60J
APT2X60DC60J
APT2X20DC120J
APT2X40DC120J
APT2X50DC120J
APT2X60DC120J
APT2X21DC60J
APT2X31DC60J
APT2X41DC60J
APT2X51DC60J
APT2X61DC60J
APT2X21DC120J
APT2X41DC120J
APT2X51DC120J
APT2X61DC120J
SOT-227
SP1
FULL BRIDGE
VRRM
(V)
DIODE Type
600
SiC
1200
SiC
IF (A)
TC=100º C
VF (V)
TJ=25º C
Package
Part Number
20
40
40
10
20
20
40
40
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
SP1
SP1
SOT-227
SOT-227
SP1
SOT-227
SP1
SOT-227
APTDC20H601G
APTDC40H601G
APT40DC60HJ
APT10DC120HJ
APTDC20H1201G
APT20DC120HJ
APTDC40H1201G
APT40DC120HJ
SP3F
IGBT Power Modules with SiC Diodes
BOOST CHOPPER
VRRM
(V)
IGBT Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
1200
TRENCH 4 FAST
25
40
2.05
2.05
SOT-227
SOT-227
-
APT25GLQ120JCU2
APT40GLQ120JCU2
DUAL CHOPPER
VRRM
(V)
IGBT Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
1200
TRENCH 4 FAST
40
2.05
SP3F
YES
APTGLQ40DDA120CT3G
32
All Power Modules RoHS Compliant
Power Modules with SiC Schottky Diodes
MOSFETs & CoolMOS Power Modules with SiC Diodes
TM
SINGLE SWITCH + SERIES FRED AND SIC PARALLEL DIODES
VDSS
(V)
MOSFET Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
1000
1200
MOS7
MOS7
65
100
110
86
SP6
SP6
option
option
APTM100UM65SCAVG
APTM120U10SCAVG
SOT-227
CHOPPER
VDSS
(V)
MOSFET Type
500
MOS8
600
CoolMOS
900
CoolMOS
1000
MOS 8
1200
MOS 8
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
65
45
24
18
120
60
330
560
300
43
38
70
107
25
44
20
15
23
SOT-227
SOT-227
SP1
SP4
SOT-227
SP1
SOT-227
SOT-227
SP1
NTC
SP1
YES
YES
YES
YES
…DA… or U2
…SK… or U3
APT58M50JCU2
APT50N60JCCU2
N/A
APTC60DAM18CTG
APT33N90JCCU2
APTC90DAM60CT1G
APT26M100JCU2
APT20M120JCU2
APTM120DA30CT1G
N/A
N/A
APTC60SKM24CT1G
N/A
N/A
APTC90SKM60CT1G
APT26M100JCU3
APT20M120JCU3
N/A
SP3F
PHASE LEG + SERIES FRED AND SIC PARALLEL DIODES
VDSS
(V)
MOSFET Type
500
MOS 7
600
CoolMOS
900
CoolMOS
800
CoolMOS
1000
MOS 7
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
38
24
35
24
18
60
150
100
75
130
67
110
54
70
107
44
21
32
43
49
SP4
SP6
SP4
SP4
SP6
SP4
SP4
SP4
SP6
SP6
YES
YES
YES
YES
YES
YES
-
APTM50AM38SCTG
APTM50AM24SCG
APTC60AM35SCTG
APTC60AM24SCTG
APTC60AM18SCG
APTC90AM60SCTG
APTC80A15SCTG
APTC80A10SCTG
APTC80AM75SCG
APTM100A13SCG
SP4
FULL BRIDGE + SERIES FRED AND SIC PARALLEL DIODES
VDSS
(V)
MOSFET Type
500
MOS 7
600
CoolMOS
800
900
1000
CoolMOS
CoolMOS
MOS 7
SP6
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
75
70
45
290
120
450
34
29
38
11
23
14
SP4
SP4
SP4
SP4
SP4
SP4
YES
YES
YES
YES
YES
YES
APTM50HM75SCTG
APTC60HM70SCTG
APTC60HM45SCTG
APTC80H29SCTG
APTC90H12SCTG
APTM100H45SCTG
SP6-P
TRIPLE PHASE LEG
VDSS
(V)
MOSFET Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
600
1000
CoolMOS
MOS 7
24
350
87
50
SP6-P
SP6-P
YES
YES
APTC60TAM21SCTPAG
APTM100TA35SCTPG
“CoolMOSTM” is a trademark of Infineon Technologies AG.
33
SiC MOSFET Power Modules
T-TYPE 3-LEVEL INVERTER
VCES
(V)
Technology
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
600/1200
IGBT &
SiC MOSFET
110
40
20
50
SP3F
SP3F
YES
YES
APTMC120HR11CT3AG
APTMC120HRM40CT3AG
SOT-227
3-LEVEL NPC INVERTER
VCES
(V)
Technology
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
600
SiC MOSFET
110
55
14
20
40
160
SP3F
SP3F
SP6
YES
YES
-
APTMC60TL11CT3AG
APTMC60TLM55CT3AG
APTMC60TLM14CAG
SP1
PHASE LEG
VCES
(V)
Technology
700
SiC MOSFET
1200
SiC MOSFET
1700
SiC MOSFET
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
30
15
7
6
55
25
20
16
12
9
8
60
30
97A
194A
440A
480A
40
80
108
102
150
200
200
40
80
SP1
SP3F
D3
SP6
SP1
SP3F
SP1
D3
SP3F
SP3F
D3
SP1
SP1
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
APTSM70AM30CT1AG
APTSM70AM15CT3AG
APTSM70AM06CD3AG
APTSM70AM05CT6AG
APTMC120AM55CT1AG
APTMC120A25CT3AG
APTMC120AM20CT1AG
APTMC120AM16CD3AG
APTMC120AM12CT3AG
APTMC120AM09CT3AG
APTMC120AM08CD3AG
APTMC170AM60CT1AG
APTMC170AM30CT1AG
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
20
60
100
34
33
33
17
12
146
49
30
55
60
89
100
150
SP6-P
SP3F
SP3F
SP3F
SP6-P
SP6-P
SP6-P
SP6-P
YES
YES
YES
YES
YES
YES
YES
YES
APTSM70TAM20CTPAG
APTSM70TAM60CT3AG
APTSM120TA10CT3AG
APTMC120TAM34CT3AG
APTMC120TAM33CTPAG
APTSM120TAM33CTPAG
APTMC120TAM17CTPAG
APTMC120TAM12CTPAG
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
60
100
40
49
30
50
SOT-227
SOT-227
SOT-227
-
APT50SM70JCU2
APT30SM120JCU2
APT50MC120JCU2
NEW!
NEW!
NEW!
NEW!
SP3F
TRIPLE PHASE LEG
VCES
(V)
Technology
700
SiC MOSFET
1200
SiC MOSFET
NEW!
NEW!
NEW!
NEW!
SP6
NEW!
NEW!
D3
BOOST CHOPPER
VCES
(V)
Technology
700
SiC MOSFET
1200
SiC MOSFET
BUCK CHOPPER
VCES
(V)
Technology
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
700
1200
SiC MOSFET
SiC MOSFET
60
100
49
30
SOT-227
SOT-227
-
APT50SM70JCU3
APT30SM120JCU3
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
30
50
17
97
59
110
SP3F
SP3F
SP3F
YES
YES
YES
NEW!
NEW!
FULL BRIDGE
VCES
(V)
Technology
700
SiC MOSFET
1200
SiC MOSFET
34
APTSM70HM30CT3AG NEW!
APTSM120HM50CT3AG NEW!
APTMC120HM17CT3AG NEW!
SP6-P
DIODE Power Modules
SINGLE DIODE
VRRM
(V)
200
400
600
1000
1200
SOT-227
DIODE
Type
IF (A)
TC=80º C
VF (V)
TJ=25º C
FRED
500
500
450
430
400
1.1
1.5
1.8
2.3
2.5
LP4
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
Part Number
40
90
50
52
75
75
100
100
130
150
160
200
200
1.3
1.3
1.45
1.8
1.6
1.38
1.9
1.7
1.8
1.28
1.65
1.55
1.31
SP1
SP1
SM2-1
SM2
SM2
SM2-1
SM3
SM2-1
SM3
SM3-1
SM3
SM3
SM3-1
APTDR40X1601G
APTDR90X1601G
MSDM50-08/12/16/18
MSD52-08/12/16/18
MSD75-08/12/16/18
MSDM75-08/12/16/18
MSD100-08/12/16/18
MSDM100-08/12/16/18
MSD130-08/12/16/18
MSDM150-08/12/16/18
MSD160-08/12/16/18
MSD200-08/12/16/18
MSDM200-08/12/16/18
DIODE
Type
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
Style
Part Number
FRED
30
60
100
30
30
60
60
75
100
100
200
30
100
200
30
60
200
50
75
100
200
1.0
1.0
1.0
1.8
1.8
1.8
1.8
1.6
1.6
1.6
1.6
2.1
2.1
2.1
2.6
2.6
2.4
1.8
1.8
2.2
2.2
SOT-227
SOT-227
SP4
SP1
SOT-227
SOT-227
SP1
SOT-227
SOT-227
SP1
SP6
SOT-227
SP4
SP6
SP1
SP1
SP6
SOT-227
SOT-227
SP4
SP6
APT30DF20HJ
APT60DF20HJ
APTDF100H20G
APTDF30H601G
APT30DF60HJ
APT60DF60HJ
APTDF60H601G
APT75DL60HJ
APT100DL60HJ
APTDF100H601G
APTDF200H60G
APT30DF100HJ
APTDF100H100G
APTDF200H100G
APTDF30H1201G
APTDF60H1201G
APTDF200H120G
APT50DF170HJ
APT75DF170HJ
APTDF100H170G
APTDF200H170G
Package
APTDF500U20G
APTDF500U40G
APTDF450U60G
APTDF430U100G
APTDF400U120G
LP4
3-PHASE BRIDGE
VRRM
(V)
DIODE
Type
1600
RECTIFIER
800
1200
1600
1800
RECTIFIER
SP1
SM2
FULL BRIDGE
VRRM
(V)
200
600
1000
1200
1700
COMMON CATHODE - COMMON ANODE - DOUBLER
VRRM
(V)
200
600
1000
1200
1700
DIODE
Type
FRED
IF (A)
VF (V)
per Diode TJ=25º C
400
1.0
1.6
2.1
2.4
2.2
SM2-1
SM3
SM3-1
SP4
Package
SP6
Common Cathode
Common Anode
Doubler
APTDF400KK20G
APTDF400KK60G
APTDF400KK100G
APTDF400KK120G
APTDF400KK170G
APTDF400AA20G
APTDF400AA60G
APTDF400AA100G
APTDF400AA120G
APTDF400AA170G
APTDF400AK20G
APTDF400AK60G
APTDF400AK100G
APTDF400AK120G
APTDF400AK170G
35
SP6
All Power Modules RoHS Compliant
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Package Outlines
D3 Pak
or TO-268
TO-220 [KF]
Revised
8/29/97
Revised
4/18/95
TO-220 2-Lead
TO-220 3-Lead
C a th o d e
C a th o d e
A node
TO-247 3-Lead
TO-247 2-Lead
T-MAX®
TO-264
264 MAX™
ISOTOP® or SOT-227
Refer to web page for additional package outline drawings
36
ISOTOP® is a registered trademark of SGS Thomson
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Power Module Outlines
D4
LP4
LP8
57,3 ā0,5
81 ā0,20
3
26,5 ā0,5
D3
62 ā1
57,10 ā1
30 ā0,20
M 6 (4x)
70 ā0,20
SP2
11.5±0.5
17.5±0.5
SP1
40.8±0.5
51.6±0.5
4.3±0.25
R5
45±0.25
37
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Power Module Outlines
SP3F
SP4
SP6 - 3 outputs
SP6 - 4 outputs, Version 1
2,80 x 0,5
2,80
7,8 MAX
x 0,5
15
17
6,50
15
6,50
15
16
16,98
22
22
7,8 MAX
108
108
93
93
M 5
(4x)
5
(3x
7,50
)
12
48
62
48
62
0
0
14
13,50
13,50
18,20
7,50
7,50
Ø 6,40 (4x)
Ø 6,40 (4x)
Ø 12 (4x)
26/10/12
26/10/12
SP6 4 outputs, Version 2
SP6-P
2,80
x 0,5
17
6,50
15
15
22
7,8 MAX
108
93
M 5
(4x)
18,20
12
13,50
62
0
48
14
7,50
5,10
7,50
13,50
17
Ø 6,40 (4x)
27
48
,50
27
R6
48
26/10/12
38
28
27
48
,50
48
R6
28
,50
48
28
R6
Ø 12 (4x)
Ø 12 (4x)
18,20
M
14
7,50
12
13,50
13,50
Power Module Outlines
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
SM2
SM2-1
SM3
SM3-1
39
Microsemi Power Portfolio 2016
Microsemi Power Semiconductor
Products
405 SW Columbia Street
Bend, Oregon 97702
Tel: 541-382-8028
Toll Free USA: 800-522-0809
Fax: (541) 388-0364
Email: [email protected]
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: [email protected]
www.microsemi.com
©2016 Microsemi Corporation. All rights reserved.
Microsemi and the Microsemi logo are registered
trademarks of Microsemi Corporation. All other
trademarks and service marks are the property
of their respective owners.
Microsemi Power Modules
Microsemi Corporate Headquarters
26 rue de Campilleau
33520 Bruges - France
Tel: +33-557 921515
Fax: +33-556 479761
Email: [email protected]
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: [email protected]
www.microsemi.com
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for
communications, defense and security, aerospace, and industrial markets. Products include high-performance and
radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs, and ASICs; power management products; timing
and synchronization devices and precise time solutions; voice processing devices; RF solutions; discrete components;
enterprise storage and communications solutions, security technologies, and scalable anti-tamper products; Ethernet
solutions; Power-over-Ethernet ICs and midspans; custom design capabilities and services. Microsemi is headquartered
in Aliso Viejo, California, and has approximately 4,800 employees worldwide. Learn more at www.microsemi.com.
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any
particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold
hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment
or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other
testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters
provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information
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PDM. 1.0. 04/16