SELECTION GUIDE Microsemi Corporation SENSORS SEMICONDUCTOR DIODES Microsemi is a leading custom designer and manufacturer of advanced devices, components and subsystems for: avionics, radar, missile, satellite, telecommunications, wireless, automotive, security, safety, industrial processing, and traffic management applications. Our Semiconductor Diode Group manufactures a range of GaAs & Si diodes including Varactors, Hyperabrupt Varactors, PIN’s, Gunns, Schottky’s and IMPATTs. They are available in chip form and beam lead, or in a number of different package styles. The Sensors Group produces a wide range of Doppler transceivers, Gunn oscillators, isolators and many specially designed sub-systems and multi function assemblies, that enable our customers to reduce cost and improve performance of their own systems. Our Control components group includes PIN diode based products in multithrow configurations, with and with out integral drivers Limiter based products, handling RF incident power. These components are available in SMA connectorized or drop in module format. We welcome you as either an existing or a new customer, and we are sure that we will have a very successful business relationship for years to come. Varactor Diodes — GaAs (MV20000 and MV30000 Series) Capacitance ± 10% @ -4 V (pF) Abrupt Junction Tuning Varactors Hyperabrupt Junction Tuning Varactors VBR @ 10 µA = 30 V Min. (0–30 V Tuning Range) VBR @ 10 µA = 22 V Min. (2–20 V Tuning Range) Gamma = 0.50 0.3 0.4 0.5 0.6 MV21001 MV21002 MV21003 MV21004 CT0/CT30 = 2.8, Q = 8000 MV21005 MV21006 MV21007 MV21008 MV21009 CT0/CT30 = 3.8, Q = 6000 Gamma = 0.75 Gamma = 1.00 Gamma = 1.25 MV32001 CT2/CT20 = 2.8, Q = 4000 MV30011 CT2/CT20 = 3.9, Q = 4000 CT0/CT30 = 3.1, Q = 7500 MV31011 CT2/CT20 = 5.5, Q = 4000 CT0/CT30 = 3.4, Q = 7000 CT0/CT30 = 3.6, Q = 6500 MV31012 CT2/CT20 = 6.5, Q = 4000 0.7 0.8 1.0 1.2 1.5 1.8 CT0/CT30 = 4.0, Q = 5700 CT0/CT30 = 4.2, Q = 5000 CT0/CT30 = 4.3, Q = 5000 CT0/CT30 = 4.5, Q = 5000 MV32002 MV32003 MV32004 MV32005 CT2/CT20 = 3.1, Q = 3000 CT2/CT20 = 3.2, Q = 3000 CT2/CT20 = 3.3, Q = 3000 CT2/CT20 = 3.4, Q = 3000 MV30012 MV30013 MV30014 MV30015 CT2/CT20 = 4.6, Q = 3000 CT2/CT20 = 4.9, Q = 3000 CT2/CT20 = 5.2, Q = 3000 CT2/CT20 = 5.4, Q = 3000 2.0 2.2 MV21010 CT0/CT30 = 4.6, Q = 4000 2.5 MV32006 CT2/CT20 = 3.5, Q = 3000 MV30016 CT2/CT20 = 5.6, Q = 3000 MV32007 CT2/CT20 = 3.6, Q = 2500 MV30017 CT2/CT20 = 5.8, Q = 2500 MV32008 CT2/CT20 = 3.6, Q = 2500 MV30018 CT2/CT20 = 6.0, Q = 2500 MV32009 CT2/CT20 = 3.7, Q = 2000 MV30019 CT2/CT20 = 6.1, Q = 2000 MV32010 CT2/CT20 = 3.8, Q = 1500 MV30020 CT2/CT20 = 6.3, Q = 1500 MV31013 CT2/CT20 = 7.7, Q = 3000 MV31014 CT2/CT20 = 8.3, Q = 3000 MV31015 CT2/CT20 = 9.1, Q = 3000 MV31016 CT2/CT20 = 9.6, Q = 3000 MV31017 CT2/CT20 = 9.9, Q = 3000 MV31018 CT2/CT20 = 10.2, Q = 3000 MV31019 CT2/CT20 = 10.8, Q = 2000 2.7 3.0 MV31020 CT2/CT20 = 11.3, Q = 2000 3.3 3.6 MV31021 CT2/CT20 = 11.5, Q = 2000 3.7 4.5 MV31022 MV31023 MV31024 MV31025 MV31026 4.7 5.6 6.8 8.2 10.0 CT2/CT20 = 12.0, Q = 1500 CT2/CT20 = 12.3, Q = 1500 CT2/CT20 = 12.6, Q = 1500 CT2/CT20 = 12.9, Q = 1500 CT2/CT20 = 13.1, Q = 1500 Various packages available upon request. Tightened capacitance tolerances available upon request. Q measured at -4 V, referenced to 50 MHz. Capacitance ± 10% @ -4 V (pF) VBR @ 10 µA = 15 V Min. (0–15 V Tuning Range) Gamma = 0.50 0.3 0.4 0.5 0.6 0.8 1.0 1.2 1.5 1.8 MV20001 MV20002 MV20003 MV20004 MV20005 MV20006 MV20007 MV20008 MV20009 VBR @ 10 µA = 15 V Min. (2–12 V Tuning Range) Gamma = 1.00 Gamma = 1.25 Gamma = 1.50 MV30001 CT2/CT12 = 3.2, Q = 4000 MV31001 CT2/CT12 = 4.2, Q = 4000 MV30002 MV30003 MV30004 MV30005 CT2/CT12 = 3.7, Q = 3000 MV31002 MV31003 MV31004 MV31005 CT2/CT12 = 5.1, Q = 4000 MV30006 MV30007 MV30008 MV30009 CT2/CT12 = 4.2, Q = 3000 MV31006 MV31007 MV31008 MV31009 CT2/CT12 = 6.2, Q = 3000 CT0/CT15 = 2.4, Q = 8000 CT0/CT15 = 2.6, Q = 7500 MV34001 CT2/CT12 = 4.5, Q = 3000 CT0/CT15 = 2.8, Q = 7000 CT0/CT15 = 2.9, Q = 6500 CT0/CT15 = 3.0, Q = 6000 CT0/CT15 = 3.1, Q = 5700 CT0/CT15 = 3.2, Q = 5000 CT0/CT15 = 3.3, Q = 5000 CT0/CT15 = 3.4, Q = 5000 CT2/CT12 = 3.8, Q = 3000 CT2/CT12 = 4.0, Q = 3000 CT2/CT12 = 4.1, Q = 3000 CT2/CT12 = 5.7, Q = 3000 CT2/CT12 = 5.9, Q = 3000 2.0 2.2 MV20010 CT0/CT15 = 3.4, Q = 4000 2.5 3.0 3.6 CT2/CT12 = 4.3, Q = 2500 CT2/CT12 = 4.4, Q = 2500 CT2/CT12 = 4.5, Q = 2000 CT2/CT12 = 6.3, Q = 3000 CT2/CT12 = 6.5, Q = 3000 10.0 MV30010 CT2/CT12 = 4.5, Q = 1500 MV34003 MV34004 MV34005 MV34006 MV34007 CT2/CT12 = 7.1, Q = 2500 CT2/CT12 = 7.3, Q = 2500 CT2/CT12 = 7.4, Q = 1800 CT2/CT12 = 7.6, Q = 1800 CT2/CT12 = 7.9, Q = 1800 CT2/CT12 = 6.7, Q = 2000 3.8 4.5 MV34002 CT2/CT12 = 5.9, Q = 2500 CT2/CT12 = 5.4, Q = 3000 MV31010 CT2/CT12 = 6.8, Q = 2000 MV34008 CT2/CT12 = 8.1, Q = 1800 MV34009 CT2/CT12 = 8.3, Q = 1200 MV34010 CT2/CT12 = 8.9, Q = 1200 Various packages available upon request. Tightened capacitance tolerances available upon request. Q measured at -4 V, referenced to 50 MHz. Specifications @ 25°C. Specifications subject to change without notice. Microsemi Corporation 1 GaAs PIN Diodes Part Number1 Max. CJ @ -10 V Max. (pf) Min VBR (V) Max. RS @ 20 mA (Ω) Typ. Switching Speed (ns) Typ. Minority Carrier Lifetime (ns)2 MP61001 MP61002 MP61003 MP61004 MP61005 MP61006 MP61007 MP61008 MP61009 MP61010 MP61011 MP61012 0.03 200 3.0 20.0 50 0.04 200 3.0 20.0 50 0.05 200 3.0 20.0 50 0.06 100 2.0 9.0 15 0.07 100 2.0 9.0 15 0.08 100 2.0 9.0 15 0.10 75 2.0 6.0 10 0.12 75 2.0 6.0 10 0.15 50 1.0 3.5 5 0.18 50 1.0 3.5 5 0.23 50 0.8 3.5 5 0.35 50 0.8 3.5 5 Suffix of the model number indicates the package style. Suggested package styles are M11, M14, M21, M26, M36, M40, M46 and chip P10. (For example MP61001-26). 2 Minority carrier lifetime is inferred from stored charge measurement with a forward current of 10 mA. Note: All GaAs PIN diodes are passivated with Silicon Nitride with a minimum bonding area diameter of 50 microns. 1 Silicon Chip Capacitors Part Number Capacitance (pF) Voltage Rating (V) Nominal Chip Size (mils) Minimum Contact Pad Size (mils) (µm) MC0R8K100 MC1R0K100 MC1R2K100 MC1R8K100 MC2R6K100 MC3R8K100 MC4R7K100 MC6R8K100 MC8R2K100 MC10R0K100 MC15R0K100 MC22R0K100 MC33R0K100 MC47R0K100 0.8 100 12 x 12 1.5 x 1.5 38.1 x 38.1 1.0 100 12 x 12 1.5 x 1.5 38.1 x 38.1 1.2 100 12 x 12 1.5 x 1.5 38.1 x 38.1 1.8 100 12 x 12 1.5 x 1.5 38.1 x 38.1 2.6 100 12 x 12 3x3 76.2 x 76.2 3.8 100 12 x 12 3x3 76.2 x 76.2 4.7 100 12 x 12 3x3 76.2 x 76.2 6.8 100 12 x 12 5x5 127 x 127 8.2 100 12 x 12 5x5 127 x 127 10.0 100 25 x 25 7x7 177 x 177 15.0 100 25 x 25 9x9 230 x 230 22.0 100 25 x 25 11 x 11 281 x 281 33.0 100 25 x 25 14 x 14 356 x 356 47.0 100 25 x 25 17 x 17 432 x 432 Bandwidth (%) Isolation (dB) Insertion Loss VSWR (In & Out) Average Power Forward (W) Reverse (W) 10 20 0.3 1.30 40 1 10 20 0.4 1.30 30 1 8 20 0.5 1.30 20 0.8 7 18 0.6 1.35 5 0.5 2 18 0.7 1.30 0.2 0.2 599 T Miniature Ferrite Isolators Frequency, W/G, Flange 18.0-26.5GHZ, WR-42, UG595/U 26.5-40.0GHz, WR-28, UG599/U 33.0-50.0GHz, WR-22, UG599/U-M 40.0-60.0GHz, WR-19, UG599/U-M 75.0-110.0GHz, WR-10, UG599/U-M Operating Temperature range -10 to +60 deg C but for WR-10 units OP. Temp. is -10 to +50 deg C. → → Model W/G Size Flange Tapped Flange Specifications @ 25°C. Specifications subject to change without notice. 2 28 → MMI → Ordering information Microsemi Corporation Gunn Diodes Discrete Frequency: Cathode Ground (CW EPI-Down) Minimum Power (mW) C (5.4–6.9) GHz X (8.0–12.4) GHz Ku (12.4–18.0) GHz K (18.0–26.5) GHz Ka (26.5–40.0) GHz U (40.0–60.0) GHz 10 (60.5–85.0) GHz (85.0–95.0) GHz MG1036-16 MG1024-16 VOP = 4.5 V @ IOP = 900 mA VOP = 4.5 V @ IOP = 1100 mA MG1025-16 20 VOP = 4.5 V @ IOP = 1000 mA 50 100 MG1001-11 MG1005-11 MG1009-11 MG1013-16 MG1017-16 MG1021-16 MG1037-16 MG1038-16 VOP = 12 V @ IOP = 400 mA VOP = 10 V @ IOP = 400 mA VOP = 8 V @ IOP = 500 mA VOP = 6 V @ IOP = 600 mA VOP = 4.5 V @ IOP = 700 mA VOP = 4 V @ IOP = 800 mA VOP = 5 V @ IOP = 1100 mA VOP = 5 V @ IOP = 1200 mA MG1002-11 MG1006-11 MG1010-11 MG1014-16 MG1018-16 MG1022-16 VOP = 12 V @ IOP = 600 mA VOP = 10 V @ IOP = 700 mA VOP = 8 V @ IOP = 800 mA VOP = 6 V @ IOP = 1000 mA VOP = 4.5 V @ IOP = 1100 mA VOP = 4 V @ IOP = 1200 mA MG1023-16 150 VOP = 4 V @ IOP = 1600 mA (40–50 GHz) MG1015-16 MG1019-16 VOP = 6 V @ IOP = 1400 mA VOP = 5 V @ IOP = 1400 mA 200 250 MG1003-15 MG1007-15 MG1011-15 MG1020-16 VOP = 12 V @ IOP = 1100 mA VOP = 10 V @ IOP = 1200 mA VOP = 8 V @ IOP = 1200 mA VOP = 5.5 V @ IOP = 1600 mA MG1039-16 300 VOP = 5.5 V @ IOP = 1700 mA (26.5–35 GHz) MG1040-16 350 VOP = 5.5 V @ IOP = 1800 mA (26.5–35 GHz) MG1016-17 400 VOP = 6 V @ IOP = 1700 mA (18.0–23.0 GHz) 500 MG1004-15 MG1008-15 MG1012-15 VOP = 12 V @ IOP = 1300 mA VOP = 10 V @ IOP = 1600 mA VOP = 8 V @ IOP = 1700 mA Polarity: anode is the cap and cathode is the heat-sink. Discrete Frequency: Anode Ground (CW EPI-Up) Discrete Frequency: Anode Ground (Pulsed EPI-Up) Minimum Power (mW) X (9.5–11.5) GHz 5 10 20 K (23.0–25.0) GHz Ka (33.5–35.5) GHz Package Outline Minimum Power (mW) MG1054-11 MG1059-11 M11 5 VOP = 5 V @ IOP = 200 mA VOP = 5 V @ IOP = 300 mA MG1052-11 MG1058-11 VOP = 8 V @ IOP = 140 mA VOP = 5 V @ IOP = 300 mA MG1056-11 Operation over a narrow band around a specific center frequency. Other frequencies available upon request. Call factory. Operating voltage (VOP) typ. Operating current (IOP) max. Power measured with diode inserted in a critically coupled cavity. Specifications @ 25°C. Specifications subject to change without notice. K (23.0–25.0) GHz Package Outline GHz MG1044-11 M11 VOP = 8 V @ IOP = 120 mA M11 M11 10 20 VOP = 8 V @ IOP = 200 mA Polarity: cathode is the cap and anode is the heat-sink. X (9.5–11.5) GHz 30 MG1041-11 MG1045-11 VOP = 9 V @ IOP = 110 mA VOP = 8 V @ IOP =150 mA MG1042-11 MG1046-11 VOP = 9 V @ IOP = 140 mA VOP = 8 V @ IOP = 200 mA MG1043-11 M11 M11 M11 VOP = 10 V @ IOP = 180 mA Polarity: cathode is the cap and anode is the heat-sink. Pulse width = 1 µsec. Duty factor = 1% typ. Alternative pulse width and duty factors can be specified by customer. Microsemi Corporation 3 Impatts CW IMPATT Diodes Part Number FOP (GHz) Min. PO (W) VBR @ 1 mA (V) Typ. CT (0 V) (pF) Typ. VOP (V) Typ. IOP (A) Min. Eff. (%) Max. θ (°C/W) Pkg. Style MI5022 9.5 - 10.2 3.5 30 20 50 0.43 20 12.0 M18 Pulsed IMPATT Diodes 1 2 Part Number FOP (GHz) Min. PO (W) VBR @ 1 mA (V) Typ. CT (0 V) (pF) Typ. VOP (V) Typ. IOP (A) Min. Eff. (%) Max. θ (°C/W) Pkg. Style MI5001 MI5003 MI5004 5.1 - 5.4 101 70 80 95 1.2 13 8.0 M 15 9.1 - 9.6 151 45 75 65 1.8 15 9.5 M 18 9.1 - 9.5 122 35 42 58 1.2 18 9.5 M 18 Pulse width 0.5 - 10 µS; duty cycle: 0.5–5%. Pulse width 1 - 2 µS; duty cycle: 20–30%. Notes: Power output is measured in a critically coupled cavity at the customer-specified frequency—FOP. Total capacitance is measured at 1 MHz. Test procedure for measuring thermal resistance is available on request. Breakdown Voltage is measured at 1 mA. High Cut-off GaAs Frequency Multiplier Diodes 1 2 3 4 5 Part Number CJ0 ± 10% (pF)1, 3, 4 Typ. CTO /CTVBR5 VBR @ 10 µA (V) Typical Q @ -4 V2 MV71001 MV71002 MV71003 MV71004 MV71005 MV71006 MV71007 MV71008 MV71009 MV71010 MV71011 MV71012 MV71013 0.2 2.1 15 8000 0.3 2.4 15 8000 0.4 2.6 15 7500 0.5 2.8 15 7000 0.3 2.8 30 8000 0.4 3.1 30 7500 0.5 3.4 30 7000 0.6 3.6 30 6500 0.7 3.7 30 6000 0.8 3.8 30 6000 0.9 3.9 30 5700 1.0 4.0 30 5700 1.2 4.2 30 5000 Capacitance is measured at 1 MHz using a shielded fixture. Measured by DeLoach Technique and referenced to 50 MHz. Tightened tolerances available upon request. Package parasitics are not included in above specifications. The contributions of package capacitance add to the overall total capacitance and will vary depending upon package style selected. The values for package capacitance,CP, can be made available upon request. The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary depending upon case style selection. 2 Stack ISIS Diodes— Breakdown Voltage: 55V min Part Number MIV41001-21 MIV41002-21 MIV41003-21 MIV41001-29 MIV41002-29 MIV41003-29 CJ @ 0v (pF) Min. Cut-off Frequency (GHz)1 Package Capacitance (pF) Part Number CJ @ 0v (pF) Min. Cut-off Frequency (GHz)1 Package Capacitance (pF) 0.1 - 0.3 1000 0.15 1000 0.15 700 0.15 0.3 - 0.5 700 0.15 0.5 - 1.0 600 0.15 0.5 - 1.0 600 0.15 0.1 - 0.3 1000 0.01 0.1 - 0.3 1000 0.01 0.3 - 0.5 700 0.01 0.3 - 0.5 700 0.01 0.5 - 1.0 600 0.01 MIV41011-21 MIV41012-21 MIV41013-21 MIV41011-29 MIV41012-29 MIV41013-29 0.1 - 0.3 0.3 - 0.5 0.5 - 1.0 600 0.01 Cut-off frequency measured at 6 volts. Other package styles are available on request. Different breakdown voltages are available on request. 1 Specifications @ 25°C. Specifications subject to change without notice. 4 3 Stack ISIS Diodes— Breakdown Voltage: 75V min Microsemi Corporation GaAs Schottky Barrier Diodes Part Number1 Typ. CJ (pF)2 Min./Max. RS (Ω)3 LO Test Freq. (GHz) Typ. Noise Figure (dB)4 Min./Max. IF Impedance (Ω) Min. VBR @ 10µA(V) MS8001 MS8002 MS8003 MS8004 0.10 0.10 3–6 9.375 5.6 250/500 5 3–6 16.000 5.6 250/500 5 0.07 3–6 24.000 6.5 250/500 5 0.06 3–6 36.000 6.5 250/500 5 Si Schottky Barrier Diodes 1 2 3 4 Part Number Typ. CT (pF)2 Typ. RS (Ω)3 Max IR @ 1 v (nA) Max VF @ 1 mA (mV) Min. VB @ 10 µA (V) MS8520-48 0.02 8 100 390 3 Suffix of the model number indicates the package style. Suggested package styles are M22, M26, M38, M39, M46 and M48 as well as in chip form P10. (For example MS8002-38) Capacitance CJ is measured at zero bias with a 1 MHz signal. Series resistance, RS, is calculated by subtracting the barrier resistance RD = kT/qI from the measured total resistance RT at 10 mA: RS = RT - RD: k = Boltzmann Constant, T = diode temperature in degrees K, q = electronic charge, I = rectified current. The quoted noise figure (NF) is a single side band NF measured at LO power of 6 dBm for a single, and 10 dBm for a balanced mixer with a 30 MHz IF amplifier of minimum NF of 1.5 dB. GaAs Schottky Flip Chip Diodes 1 Part Number Max. CT @ 0 V (pF) Max. RS @ 10 mA (Ω) Min. VBR @ 10 µA (V) Min/Max VF @ 1 mA (mV) Configuration MS8150 MS8151 MS8250 MS8251 MS8350 MS8351 0.08 7 3 650 - 750 Single 0.06 9 3 600 - 800 Single 0.081 7 3 650 - 750 Anti-parallel 0.061 9 3 600 - 800 Anti-parallel 0.081 7 3 650 - 750 Series Pair 0.061 9 3 600 - 800 Series Pair Capacitance value is for individual diode and not for complete device. GaAs PIN Flip Chip Diodes Part Number Max. CT @ 0 V, 1 MHz (pF) Min. VBR @ 10 µA (V) Max. VF @ 10 mA (V) MP6250 0.055 40 1.45 Max. RS Typ. Switching Speed @ 10 mA, 2 GHz (Ω) (nsec) 7 2 GaAs Hyperabrupt Varactor Flip Chip Diodes Part Number Max. CT @ -4 V, 1 MHz (pF) Min. VBR @ 10 µA (V) Cap. ratio CT -2V/CT -12V Gamma MV39001 MV39002 MV39003 0.40-0.60 18 3.3-4.1 1.0 0.25-0.40 18 4.3-5.3 1.25 0.40-0.60 18 4.5-5.6 1.25 Specifications @ 25°C. Specifications subject to change without notice. Microsemi Corporation 5 Package Outlines M11 M39 Dimensions (Inches) Min. Max. A B C D E F G H 0.119 0.060 0.205 0.079 0.016 0.060 0.069 0.060 0.127 0.064 0.2252 0.083 0.024 0.0643 0.073 0.064 Dimensions (Inches) Min. Max. A B C D E P2613 Dimensions (Inches) Min. Max. A B C D E F G M16 Dimensions (Inches) Min. Max. 0.027 0.113 0.156 0.015 0.025 0.018 0.016 0.034 0.118 0.164 0.025 0.045 0.022 0.019 MO9062 LP = 0.10 nH typ. CP = 0.15 pF typ. M26 Dimensions (Inches) Min. Max. A B C D E F 0.092 0.092 0.452 0.017 0.028 0.003 0.108 0.108 0.570 0.023 0.052 0.007 LP = 0.40 nH typ. CP = 0.10 pF typ. Many other packages available. Specifications @ 25°C. Specifications subject to change without notice. M38 Dimensions (Inches) Min. Max. A B C D E 0.059 0.064 0.076 0.084 0.190 0.210 0.007 0.015 0.059 0.065 F G 0.069 0.087 0.059 0.065 LP = 0.50 nH typ. CP = 0.15 pF typ. 6 Microsemi Corporation 0.050 0.055 0.021 0.005 LP = 0.40 nH typ. CP = 0.14 pF typ. LP = 0.40 nH typ. CP = 0.17 pF typ. A B C D E F G 0.040 0.051 0.200 0.019 - 0.0255 0.0125 0.0046 0.0075 0.0170 0.0050 0.0045 0.0265 0.0135 0.0056 0.0085 0.0180 0.0060 0.0055 Transceivers Fixed Frequency Gunn Transceivers Part Number MO86728 MO86735 Description Frequency (GHz) Mixer Phasing (Degrees) Min. Output Power (mW) Min. Sensitivity (dBc) Operating Voltage (V)2 Max. Operating Current (mA) X Band Transceiver 10.525 na 5 -95 +7.5 to +8.5 150 Dual IF Output, 10.525 75 to 105 5 -95 +8.5 200 X Band Transceiver MO9061 MO9062 K Band Transceiver 24.125 na 5 -92 +5.0 100 Dual IF Output, 24.125 50 to 130 5 -92 +5.0 100 24.125 na 10 to 20 -90 +6.0 to +8.0 100 24.125 50 to 130 10 to 20 -90 +6.0 to +8.0 100 K Band Transceiver MO90811 Pulsed DC, K Band Transceiver MO90821 Pulsed DC, Dual IF Output, K Band Transceiver MO9300 MO9062-22 K Band Transceiver 24.125 na 2 to 5 -90 +4.0 to +6.0 250 Dual IF Output, 24.125 75 to 105 5 -90 +5.0 250 24.125 60 to 120 8.0 -90 +3.5 to +6.5 220 35.5 75 to 105 5 -90 3.5 - 6.0 300 Frequency (GHz) Min. Electronic Tuning (MHz) Min. Output Power (mW) Min. Sensitivity (dBc) Operating Voltage (V)1 Max. Operating Current (mA) X Band VCO Transceiver 10.300 40 (+1 to +20 V) 10 -110 +8.0 to +10.0 200 X Band VCO Transceiver 10.300 40 (+1 to +20 V) 20 -110 +8.0 to +10.0 600 X Band VCO Transceiver 10.300 40 (+1 to +20 V) 35 -110 +8.0 to +10.0 600 K Band VCO Transceiver 24.125 50 (+1 to +20 V) 5 -90 +5.0 150 Dual IF Output, 24.125 50 (+1 to +20 V) 5 -90 +5.0 150 K Band VCO Transceiver 24.125 150 (+0.5 to +20 V) 5 -95 +5.0 to +8.0 400 K Band VCO Transceiver 24.125 350 (0 to +9 V) 5 to 10 -95 +5.0 to +8.0 400 Ka Band VCO Transceiver 35.5 100 (+1 to +20 V) 7.5 -90 3.5 - 6.0 350 Ka Band VCO Transceiver 34.7 100 (+1 to +20 V) 7.5 -90 3.5 - 6.0 350 Ka Band VCO Transceiver 33.8 100 (+1 to +20 V) 7.5 -90 3.5 - 6.0 350 Drive Voltage (V) Typ. Drive Current (mA) 1.3 20 K Band Transceiver MO9096 Dual IF Output, K Band Transceiver w/Planar Antenna MO9402 Ka Band Stereo Transceiver MO9081 and MO9082 pulse width = 10 microseconds, duty factor = 50%. Actual operating voltage specified with product. Other pulse widths and duty factors available upon request. Other frequencies and power levels available upon request. 1 2 Voltage Controlled Gunn Transceivers Part Number MO87127-1 MO87127-2 MO87127-3 MO9071 MO9072 Description K Band VCO Transceiver MO87849 MO87930 MO9410-1 MO9410-2 MO9410-3 1 Actual operating voltage specified with product. RF Modulators Part Number Description MO9207 K Band Waveguide Modulator Fequency (GHz) 24.125 Modulation Rate Typical (Hz) Modulation Depth 1Hz - 100,000 Hz >90% Specifications @ 25°C. Specifications subject to change without notice. Microsemi Corporation 7 Oscillators Fixed Frequency Gunn Oscillators Part Number MO86751A MO86751B MO86751C MO86751D MO9060 MO90801 MO86790 MO86791 MO86797 MO9205 Description Frequency (GHz) Min. Output Power (mW) Operating Voltage (V) Max Operating Current (mA) X Band Oscillator 10.525 10 +8.5 200 X Band Oscillator 10.525 25 +9.0 to +10.0 500 X Band Oscillator 10.525 50 +9.0 to +10.0 600 X Band Oscillator 10.525 100 +9.0 to +10.0 800 K Band Oscillator 24.125 5 +5.0 100 K Band Oscillator (Pulsed) 24.125 11–20 Peak +6.0 to +7.0 300 Peak K Band Oscillator 24.150 10–20 +3.5 to +6.5 250 K Band Oscillator 24.150 40–100 +5.0 to +8.0 1000 Ka Band Oscillator 35.500 15–25 +3.0 to +6.0 450 Ka Band Oscillator 35.500 15–30 +5.0 400 MO9080 pulse width = 10 microseconds, duty factor = 50%. Other pulse widths and duty factors available upon request. Other frequencies and power levels available upon request. 1 Voltage Controlled Gunn Oscillators Part Number MO87108-1 MO87108-2 MO87108-3 MO87603B MO9070 MO87828-1 MO87828-2 MO87828-3 MO87828-4 MO87827-1 MO87827-2 MO87827-3 MO87827-4 MO9405-1 Description Frequency (GHz) Min. Electronic Tuning (MHz) Min. Output Power (mW) Tuning Voltage (V) Operating Voltage (V) Max. Operating Current(mA) X Band Oscillator 10.300 40 15 +1 to +20 +8.0 to +10.0 200 X Band Oscillator 10.300 40 25 +1 to +20 +8.0 to +10.0 600 X Band Oscillator 10.300 40 40 +1 to +20 +8.0 to +10.0 600 X Band Oscillator 9.405 60 7 0 to +13 +10.5 200 K Band Oscillator 24.125 25 3 +2 to +10 +5.0 100 K Band Oscillator 21.500 40 10 0 to +15 +5.0 to +8.0 400 K Band Oscillator 22.100 40 10 0 to +15 +5.0 to +8.0 400 K Band Oscillator 22.700 40 10 0 to +15 +5.0 to +8.0 400 K Band Oscillator 23.300 40 10 0 to +15 +5.0 to +8.0 400 K Band Oscillator 21.500 30 60 0 to +10 +5.0 to +8.0 1400 K Band Oscillator 22.100 30 60 0 to +10 +5.0 to +8.0 1400 K Band Oscillator 22.700 30 60 0 to +10 +5.0 to +8.0 1400 K Band Oscillator 23.300 30 60 0 to +10 +5.0 to +8.0 1400 Ka Band Oscillator 34.0 100 15 +1 to +20 +4.0 to +6.0 400 Center Frequency (GHz) Usable Frequency Range (GHz) K Band Pyramidal Horn Antenna 24.150 18.0 to 26.5 20 27 X Band Pyramidal Horn Antenna 10.525 8.0 to 12.0 70 30 12 K Band Planar Array Antenna 24.125 24.0 to 24.25 14 14 18 V Band Pyramidal Horn Antenna 77.000 76.0 to 78.0 20 15 20 K Band Pyramidal Horn Antenna 24.150 18.0 to 26.5 17 26 18 Other frequencies available upon request. Horn Antennas Part Number MDT86552 MDT86554 MDT5864 MHA4200 MDT6386 Description MDT6386 has an integrated harmonic filter. Specifications @ 25°C. Specifications subject to change without notice. 8 Microsemi Corporation Antenna Antenna 3dB Beamwidth 3dB Beamwidth E Plane (deg) H Plane (deg) Nominal Gain (dB) 17 Waveguide Detectors Part Number MO86561 MO86571 Description Center Frequency (GHz) Minimum Detectable Signal (dBm)1 RF Bandwidth (MHz) K Band Detector, Waveguide Mount 24.125 -45 300 X Band Detector, Waveguide Mount 10.525 -45 300 Video bandwidth = 1 MHz; N.F. = 2 dB. Other frequencies available upon request. 1 Specifications @ 25°C. Specifications subject to change without notice. Microsemi Corporation 9 sales_MMPI @ microsemi.com 0509-205 Microsemi Corporation 75 Technology Drive Lowell, MA 01851-5293 phone: (978) 442-5600 fax: (978) 937-3748