K Band Waveguide Modulator ® TM M09207 Features ● Waveguide Assembly ● High Modulation Depth ● GaAs PIN Diode ● Low Drive Voltage ● For Low Cost Commercial Applications Specifications @ 25°C ● Insertion Loss: 1.5 dB Typ. @ 20 mA ● Modulation Depth: >90% Typ. ● Frequency of Operation: 24.125 GHz ● RF Bandwidth: 200 MHz ● Modulation Rate: 1 Hz–100 kHz ● Drive Voltage: 1.3 V @ 20 mA, Typ. Description Microsemi’s MO9207 K-band modulator with integral GaAs PIN diode is designed for testing Doppler transceivers on the bench and in the field. Various radar cross sections may be simulated by attaching different size horn antennas to the modulator. Maximum Ratings Operating Temperature -30°C to +70°C Storage Temperature -40°C to +85°C Drive Current 50 mA Copyright 2008 Rev: 2008-11-04 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978 -442-5600, Fax: 978-937-3748 Page 1 K Band Waveguide Modulator ® TM M09207 K Band Waveguide Modulator (MO9207) % Modulation Typical Performance Characteristics MO9207 K Band Waveguide Modulator 120 110 100 90 80 70 60 50 40 30 20 10 0 0.820 (20.83) Max. UG-595/U Flange WR-42 Waveguide Solder Pin 1.30 Max. (33.02) 0.875 (22.2) 0 5 10 15 4X 0.120 Thru [3.05] 20 Peak PIN Diode Current (mA) Modulation Characteristic 0.875 (22.2) 0.125 Max. (3.18) Dimensions are in inches (mm). Flange mates with UG-595/U WR-42. Delivered with grounded buss wire for ESD protection. Modulator Driver The modulation driver should be current limited to 50 mA pulse current. For a drive current of 20 mA from a 50-ohm modulator operating at 5 volts a 120-ohm resistor should be inserted in series with the PIN diode. On + On 0 Off Off Positive drive is applied to the solder pin on top of unit. Ground is any metallic contact on the waveguide. Copyright 2008 Rev: 2008-11-04 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978 -442-5600, Fax: 978-937-3748 Page 2