IRF7470 Data Sheet (128 KB, EN)

PD- 95276
IRF7470PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
l Lead-Free
VDSS
RDS(on) max
ID
40V
13mΩ
10A
Benefits
l
Ultra-Low Gate Impedance
l
Very Low RDS(on) at 4.5V VGS
l
Fully Characterized Avalanche Voltage
and Current
1
8
S
2
7
S
3
6
4
5
S
G
A
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
40
± 12
10
8.5
85
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes  through „ are on page 8
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8/11/04
IRF7470PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
40
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.8
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
–––
––– V
0.04 ––– V/°C
9.0
13
10
15 mΩ
14.5
30
–––
2.0
V
–––
20
µA
–––
100
–––
200
nA
–––
-200
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A „
VGS = 4.5V, ID = 8.0A „
VGS = 2.8V, ID = 5.0A „
VDS = VGS, ID = 250µA
VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
29
7.9
8.0
23
10
1.9
21
3.2
3430
690
41
Max. Units
Conditions
–––
S
VDS = 20V, ID = 8.0A
44
ID = 8.0A
12
nC
VDS = 20V
12
VGS = 4.5V ƒ
35
VGS = 0V, VDS = 16V
–––
VDD = 20V
–––
ID = 8.0A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 20V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
300
8.0
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
2.3
A
–––
–––
85
––– 0.80
––– 0.65
––– 72
––– 130
––– 76
––– 150
1.3
–––
110
200
110
230
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 8.0A, VGS = 0V ƒ
TJ = 125°C, IS = 8.0A, VGS = 0V
TJ = 25°C, IF = 8.0A, VR= 20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 8.0A, VR=20V
di/dt = 100A/µs ƒ
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IRF7470PbF
1000
100
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
100
10
2.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
2.0V
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 150 ° C
TJ = 25 ° C
10
V DS = 25V
20µs PULSE WIDTH
2.6
2.8
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
2.4
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.2
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
2.0
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
3.0
ID = 10A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7470PbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
1
10
ID = 8.0A
VDS = 32V
VDS = 20V
8
6
4
2
10
0
100
0
10
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
TJ = 150 ° C
100
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10000
VGS , Gate-to-Source Voltage (V)
10
100000
2.2
10us
100us
10
1ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Fig 6. On-Resistance Vs. Drain Current
IRF7470PbF
10.0
VDS
VGS
ID , Drain Current (A)
8.0
RD
D.U.T.
RG
+
-V DD
6.0
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.030
RDS(on) , Drain-to -Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF7470PbF
0.025
0.020
VGS = 2.7V
0.015
VGS = 4.5V
VGS = 10V
0.010
0
10
20
30
40
50
0.020
0.018
0.016
0.014
ID = 10A
0.012
0.010
60
2
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
QGD
800
+
V
- DS
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
BOTTOM
ID
3.6A
6.4A
8.0A
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7470PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
6X
2
3
MIN
.0532
.0688
1.35
1.75
A1 .0040
0.25
.0098
0.10
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
A
4
e
e1
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
8X b
0.25 [.010]
MAX
.013
H
0.25 [.010]
1
MAX
b
5
6
MILLIMETERS
MIN
A
E
INCHE S
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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IRF7470PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 9.4mH
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board, t<10 sec
RG = 25Ω, IAS = 8.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
8
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