StrongIRFET™ IRFR7540PbF IRFU7540PbF HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters D G S VDSS RDS(on) typ. max 60V 4.0m 4.8m ID (Silicon Limited) 110A ID (Package Limited) 90A D S G Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant Package Type IRFR7540PbF D-Pak IRFU7540PbF I-Pak G Gate S D I-Pak IRFU7540PbF D Drain Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tube 75 20 S Source Orderable Part Number IRFR7540PbF IRFR7540TRPbF IRFR7540TRLPbF IRFU7540PbF 125 ID = 66A Limited by Package 100 15 10 TJ = 125°C 5 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage www.irf.com 75 50 25 TJ = 25°C 2 1 D-Pak IRFR7540PbF ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m) Base part number G © 2014 International Rectifier 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current Repetitive Avalanche Energy EAR Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA Junction-to-Ambient RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Max. 110 78 90 440* 140 0.95 ± 20 Units A W W/°C V -55 to + 175 °C 300 160 273 mJ See Fig 15, 16, 23a, 23b A mJ Typ. ––– ––– ––– Max. 1.05 50 110 Units °C/W Min. 60 Typ. Max. ––– ––– Units Conditions V VGS = 0V, ID = 250µA ––– ––– ––– 2.1 ––– ––– ––– ––– ––– 48 4.0 5.2 ––– ––– ––– ––– ––– 2.4 mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 66A m VGS = 6.0V, ID = 33A V VDS = VGS, ID = 100µA VDS = 60V, VGS = 0V µA VDS = 60V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V ––– 4.8 ––– 3.7 1.0 150 100 -100 ––– Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 90A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 72µH, RG = 50, IAS = 66A, VGS =10V. ISD 66A, di/dt 1190A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 23A, VGS =10V. * Pulse drain current is limited at 360A by source bonding technology. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 200 ––– ––– ––– ––– ––– ––– Typ. ––– 86 22 27 59 8.7 38 td(off) Turn-Off Delay Time ––– 59 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 32 4360 410 260 ––– 410 ––– VGS = 0V, VDS = 0V to 48V ––– 530 ––– VGS = 0V, VDS = 0V to 48V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 110 ––– ––– 440* Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 11 34 37 36 47 1.9 ––– ––– ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID =66A 130 ID = 66A ––– VDS = 30V nC ––– VGS = 10V ––– ––– VDD = 30V ––– ID = 66A ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– pF VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.7 Diode Characteristics Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V D G S TJ = 25°C,IS = 66A,VGS = 0V V/ns TJ = 175°C,IS = 66A,VDS = 60V TJ = 25°C VDD = 51V ns TJ = 125°C IF = 66A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF 1000 1000 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 4.5V 1 60µs PULSE WIDTH 100 BOTTOM 4.5V 10 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 0.1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1000 100 TJ = 175°C 10 TJ = 25°C 1 VDS = 25V 60µs PULSE WIDTH 0.1 ID = 66A VGS = 10V 2.0 1.5 1.0 0.5 2 3 4 5 6 7 8 -60 60 100 140 180 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 Ciss Coss 1000 20 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 -20 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics Crss ID = 66A 12 VDS = 48V VDS = 30V 10 VDS= 12V 8 6 4 2 0 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 1 VDS, Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 175°C 100 TJ = 25°C 10 1 100µsec 100 Limited by Package 10 10msec 1 DC Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 0.1 1.2 1 10 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.7 80 Id = 1.0mA 0.6 76 0.5 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) 1msec OPERATION IN THIS AREA LIMITED BY RDS(on) 72 0.4 0.3 0.2 68 0.1 0.0 64 -60 -20 20 60 100 140 0 180 10 TJ , Temperature ( °C ) 30 40 50 60 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS (on), Drain-to -Source On Resistance (m) 20 Fig 12. Typical Coss Stored Energy 17 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 14 11 8 5 2 0 50 100 150 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width 180 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 66A EAR , Avalanche Energy (mJ) 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF 12 4.0 IF = 66A VR = 51V 10 3.5 TJ = 25°C TJ = 125°C 8 3.0 IRRM (A) VGS(th), Gate threshold Voltage (V) 4.5 2.5 6 4 2.0 ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 2 1.0 0 -60 -40 -20 0 20 40 60 80 100120140160180 0 200 TJ , Temperature ( °C ) 1000 180 IF = 44A VR =51V IF = 66A VR = 51V 160 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 140 QRR (nC) IRRM (A) 800 Fig 18. Typical Recovery Current vs. dif/dt 12 8 600 diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature 10 400 6 4 120 100 80 60 2 40 20 0 0 0 100 200 300 400 500 600 700 800 900 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 180 IF = 44A VR = 51V 160 TJ = 25°C TJ = 125°C QRR (nC) 140 120 100 80 60 40 20 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 2001 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFR120 12 116A 34 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFR120 12 ASSEMBLY LOT CODE 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR 1 = 2001 WEEK 16 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "A" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFU120 119A 56 78 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates Lead-Free" DATE CODE YEAR 1 = 2001 WEEK 19 LINE A OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFU120 56 ASSEMBLY LOT CODE 78 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 1 = 2001 WEEK 19 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 17, 2014 IRFR/U7540PbF Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level D-Pak MSL1 I-Pak N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date Comment 11/5/2014 Updated EAS (L =1mH) = 273mJ on page 2 Updated note 10 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 23A, VGS =10V”. on page 2 Updated package outline on page 9 & 10 12/17/2014 Added “IRFR7540TRLPbF” in orderable part number on page 1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 17, 2014