NSR01F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com 30 V SCHOTTKY BARRIER DIODE Features • • • • • • • • 1 CATHODE Very Low Forward Voltage Drop − 370 mV @ 10 mA Low Reverse Current − 7.0 mA @ 10 V VR 100 mA of Continuous Forward Current ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C Very High Switching Speed Low Capacitance − CT = 7 pF This is a Halide−Free Device This is a Pb−Free Device MARKING DIAGRAM V130 YYY LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection V130 YYY = Specific Device Code = Year Code ORDERING INFORMATION Device NSR01F30NXT5G Markets • • • • • PIN 1 DSN2 (0201) CASE 152AA Typical Applications • • • • • 2 ANODE Package Shipping† DSN2 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Current (DC) IF 100 mA Forward Surge Current IFSM (60 Hz @ 1 cycle) ESD Rating: Human Body Model Machine Model A 4.0 ESD >8.0 >400 kV V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2014 April, 2014 − Rev. 3 1 Publication Order Number: NSR01F30/D NSR01F30NXT5G THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 400 312 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 170 735 °C/W mW Storage Temperature Range Tstg −40 to +125 °C Junction Temperature TJ +125 °C Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 10 V) (VR = 30 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) VF Total Capacitance (VR = 5.0 V, f = 1 MHz) CT Min Typ mA 7.0 50 V 0.37 0.50 http://onsemi.com 2 7.0 pF NSR01F30NXT5G TYPICAL CHARACTERISTICS 1.0E+04 10 150°C 1 150°C 1.0E+02 125°C 1.0E+01 75°C 1.0E+00 125°C 0.1 1.0E+03 Ir, REVERSE CURRENT (mA) IF, FORWARD CURRENT (mA) 100 25°C 1.0E−01 75°C 25°C 0.01 1.0E−02 −25°C −25°C 1.0E−03 0.001 1.0E−04 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 20 CT, TOTAL CAPACITANCE (pF) 0 TA = 25°C 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 3 25 30 25 30 NSR01F30NXT5G PACKAGE DIMENSIONS DSN2, 0.6x0.3, 0.4P, (0201) CASE 152AA ISSUE A DIM A A1 b D E e L E 0.06 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B D 0.06 C 2X TOP VIEW MOUNTING FOOTPRINT* 0.05 C 0.28 A 2X MILLIMETERS MIN MAX 0.24 0.30 0.00 0.01 0.20 0.22 0.30 BSC 0.60 BSC 0.40 BSC 0.10 0.12 0.05 C A1 C SEATING PLANE 0.75 SIDE VIEW e 1 2X L 0.30 0.28 DIMENSIONS: MILLIMETERS 2 2X See Application Note AND8398/D for more mounting details b *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.05 C A B BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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