MURHS160T3G, SURHS8160T3G Power Rectifier Features and Benefits Ultrafast 35 Nanosecond Recovery Times 175C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 V AEC−Q101 Qualified and PPAP Capable SURHS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements This is a Pb−Free Device* http://onsemi.com ULTRAFAST RECTIFIER 1.0 AMPERES 600 VOLTS Applications Power Supplies Inverters Free Wheeling Diodes SMB CASE 403A PLASTIC Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Cathode Polarity Band MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TL = 145C) IF(AV) Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction and Storage Temperature Range ESD Ratings: Machine Model = C Human Body Model = 3B TJ, Tstg A 1.0 A 15 −65 to +175 C V > 400 > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 1 MARKING DIAGRAM ALYWW UH16G G UH16 = Specific Device Code AL = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MURHS160T3G SMB (Pb−Free) 2,500 / Tape & Reel SURHS8160T3G SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 3 1 Publication Order Number: MURHS160/D MURHS160T3G, SURHS8160T3G THERMAL CHARACTERISTICS Symbol Value Unit Maximum Thermal Resistance, Junction−to−Lead (Note 1) Rating RqJL 24 C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 3) (IF = 1.0 A, TC = 25C) (IF = 1.0 A, TC = 125C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 125C) IR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) trr 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 Typ Max 1.5 1.2 2.4 1.7 0.18 5.0 20 200 25 16 35 30 Unit V mA ns TJ = 150C 1 TJ = 125C TJ = 25C 0.5 1 1.5 2 2.5 3 10 TJ = 150C 1 TJ = 125C TJ = 25C 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−03 IR, REVERSE CURRENT (A) 0.1 0 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 1.0E−04 TJ = 150C 1.0E−05 1.0E−06 TJ = 125C 1.0E−07 1.0E−08 TJ = 25C 1.0E−09 1.0E−10 0 100 200 300 400 500 600 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IR, MAXIMUM REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MURHS160T3G, SURHS8160T3G 1.0E−03 TJ = 150C 1.0E−04 1.0E−05 TJ = 125C 1.0E−06 TJ = 25C 1.0E−07 1.0E−08 1.0E−09 1.0E−10 0 100 200 300 400 VR, REVERSE VOLTAGE (V) 500 Figure 4. Maximum Reverse Current http://onsemi.com 3 600 4 2 dc SQUARE WAVE 1 0 50 60 70 80 90 100 110 120 130 140 150 160 170 180 PFO, AVERAGE POWER DISSIPATION (W) IF, AVERAGE FORWARD CURRENT (A) MURHS160T3G, SURHS8160T3G 10 9 8 7 6 SQUARE 5 4 DC 3 2 1 0 0 1 2 3 4 TC, CASE TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 7. Forward Power Dissipation 5 100 C, CAPACITANCE (pF) TJ = 25C 10 1 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 100 D = 0.6 10 D = 0.2 D = 0.1 D = 0.05 1 D = 0.01 0.1 P(pk) SINGLE PULSE t1 t2 0.01 0.000001 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Ambient http://onsemi.com 4 10 100 1000 MURHS160T3G, SURHS8160T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.20 2.28 0.10 0.19 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.087 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.090 0.007 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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