MBRS260T3 D

MBRS260T3G,
NRVBS260T3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
http://onsemi.com
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 60 VOLTS
Features
•
•
•
•
•
•
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard−Ring for Over−Voltage Protection
Low Forward Voltage Drop
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B26G
G
Mechanical Characteristics
•
•
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
B26
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MBRS260T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVBS260T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 7
1
Publication Order Number:
MBRS260T3/D
MBRS260T3G, NRVBS260T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 95°C)
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IO
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage Temperature Range
Tstg
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +125
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
60
dv/dt
10,000
A
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
Value
Unit
RqJL
RqJA
24
80
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
vF
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 A)
(iF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
IR
(VR = 60 V)
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
Value
Unit
TJ = 25°C
TJ = 125°C
0.51
0.63
0.475
0.55
TJ = 25°C
TJ = 125°C
0.2
20
V
mA
MBRS260T3G, NRVBS260T3G
10
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TA = 150°C
TA = 125°C
1
TA = 25°C
TA = 75°C
TA = −40°C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
TA = 150°C
TA = 125°C
1
TA = 75°C
TA = −40°C
0.1
0.0
0.8
TA = 25°C
Figure 1. Typical Forward Voltage
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.8
Figure 2. Maximum Forward Voltage
1.0E−01
100
TA = 150°C
TA = 125°C
1.0E−03
25°C
f = 1 MHz
C, CAPACITANCE (pF)
IR, REVERSE CURRENT (A)
1.0E−02
TA = 75°C
1.0E−04
TA = 25°C
1.0E−05
1.0E−06
1.0E−07
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
50
10
60
0
PFO, AVERAGE POWER DISSIPATION (W)
IF, AVERAGE FORWARD CURRENT (A)
RqJL = 24°C/W
2.5
2
SQUARE WAVE
1.5
1
0.5
0
60
70
80
90 100 110 120 130
TL, LEAD TEMPERATURE (°C)
30
40
50
60
2.5
3
Figure 4. Typical Capacitance
3.5
3
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
dc
10
140
150
2
1.8
1.6
dc
1.4
1.2
1
SQUARE WAVE
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating − Junction to Lead
Figure 6. Forward Power Dissipation
http://onsemi.com
3
RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MBRS260T3G, NRVBS260T3G
1.0E+00
50%
20%
1.0E−01 10%
5.0%
1.0E−02 2.0%
1.0%
1.0E−03
1.0E−04
1.0E+00
1.0E−01
Rtjl(t) = Rtjl*r(t)
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
t, TIME (s)
Figure 7. Thermal Response − Junction to Case
50%
20%
10%
5.0%
1.0E−02 2.0%
1.0E−03 1.0%
1.0E−04
0.00001
Rtjl(t) = Rtjl*r(t)
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 8. Thermal Response − Junction to Ambient
http://onsemi.com
4
MBRS260T3G, NRVBS260T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRS260T3/D