MURH840CTG Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 8 A Total (4 A Per Diode Leg) These are Pb−Free Devices* www.onsemi.com ULTRAFAST RECTIFIER 8.0 AMPERES, 400 VOLTS trr = 28 ns Applications • Power Supply − Output Rectification • Power Management • Instrumentation 1 2, 4 3 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C 4 TO−220AB CASE 221A 1 2 3 MARKING DIAGRAM AYWW UH840G AKA A = Assembly Location Y = Year WW = Work Week UH840 = Device Code G = Pb−Free Package AKA = Diode Polarity ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 7 1 Device Package Shipping MURH840CTG TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: MURH840CT/D MURH840CTG MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 400 V Average Rectified Forward Current (TC = 155°C) Per Leg Total Device IF(AV) A 4.0 8.0 Peak Repetitive Forward Current per Diode Leg (Square Wave, 20 kHz, TC = 149°C) IFM 8.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Controlled Avalanche Energy WAVAL 20 mJ Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Conditions Symbol Max Unit Maximum Thermal Resistance, Junction−to−Case Characteristic Min. Pad RqJC 3.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 60 Min Typical Max − − 1.12 1.45 1.9 2.2 − − 300 4.0 500 10 − − 28 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 4.0 A, Tj = 150°C) (iF = 4.0 A, Tj = 25°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, Tj = 150°C) (Rated dc Voltage, Tj = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) trr Unit V mA ns 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 175°C 150°C 10 25°C 100°C 1.0 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 3.2 Figure 1. Typical Forward Voltage 100 150°C 10 25°C 100°C 1.0 0.1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) www.onsemi.com 2 175°C Figure 2. Maximum Forward Voltage I F(AV) , AVERAGE FORWARD CURRENT (AMPS) MURH840CTG IR, REVERSE CURRENT (A) μ 1000 500 TJ = 150°C 200 100 50 20 10 100°C 5 25°C 2 1 0.5 0.2 0.1 0 50 100 150 200 250 300 350 400 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current, Per Leg 7.0 6.0 DC 5.0 4.0 RqJA = 16°C/W SQUARE WAVE 3.0 2.0 DC 1.0 SQUARE WAVE RqJA = 60°C/W, NO HEATSINK 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) 150 175 Figure 4. Forward Current Derating, Ambient, Per Leg 1000 8.0 DC C, CAPACITANCE (pF) 6.0 SQUARE WAVE 4.0 2.0 0 120 130 140 150 160 TC, CASE TEMPERATURE (°C) 170 100 10 1 0.01 180 Figure 5. Current Derating, Case, Per Leg PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (A) 8.0 60 56 52 48 44 40 36 32 28 24 20 16 12 8.0 4.0 0 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance, Per Leg TJ = 175°C SQUARE WAVE DC 0 2.0 4.0 6.0 8.0 10 12 14 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation, Per Leg www.onsemi.com 3 16 100 MURH840CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MURH840CT/D