ONSEMI MURH840CTG

MURH840CT
MEGAHERTZ™
Power Rectifier
Features and Benefits
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
8 A Total (4 A Per Diode Leg)
Pb−Free Package is Available
http://onsemi.com
ULTRAFAST RECTIFIER
8.0 AMPERES, 400 VOLTS
trr = 28 ns
1
Applications
2, 4
• Power Supply − Output Rectification
• Power Management
• Instrumentation
3
4
Mechanical Characteristics
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating:
Human Body Model 3B
Machine Model C
TO−220AB
CASE 221A
PLASTIC
1
2
3
MARKING DIAGRAM
AYWW
UH840G
AKA
A
= Assembly Location
Y
= Year
WW
= Work Week
UH840 = Device Code
G
= Pb−Free Package
AKA
= Diode Polarity
ORDERING INFORMATION
Device
MURH840CT
MURH840CTG
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Package
Shipping
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
Publication Order Number:
MURH840CT/D
MURH840CT
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
400
V
Average Rectified Forward Current
(TC = 155°C) Per Leg
Total Device
IF(AV)
A
4.0
8.0
Peak Repetitive Forward Current per Diode Leg
(Square Wave, 20 kHz, TC = 149°C)
IFM
8.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Controlled Avalanche Energy
WAVAL
20
mJ
Operating Junction and Storage Temperature Range
TJ, Tstg
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Conditions
Symbol
Max
Unit
Maximum Thermal Resistance, Junction−to−Case
Characteristic
Min. Pad
RqJC
3.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient
Min. Pad
RqJA
60
Min
Typical
Max
−
−
1.12
1.45
1.9
2.2
−
−
300
4.0
500
10
−
−
28
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 4.0 A, Tj = 150°C)
(iF = 4.0 A, Tj = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj = 150°C)
(Rated dc Voltage, Tj = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
trr
Unit
V
mA
ns
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
175°C
150°C
10
25°C
100°C
1.0
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
3.2
Figure 1. Typical Forward Voltage
100
150°C
10
25°C
100°C
1.0
0.1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
http://onsemi.com
2
175°C
Figure 2. Maximum Forward Voltage
IR, REVERSE CURRENT (A)
μ
1000
500
TJ = 150°C
200
100
50
20
10
100°C
5
25°C
2
1
0.5
0.2
0.1
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
MURH840CT
0
50
100
150
200
250
300
350
400
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current, Per Leg
7.0
6.0
DC
5.0
4.0
3.0
SQUARE WAVE
2.0
RqJA = 16°C/W
DC
1.0 SQUARE WAVE
RqJA = 60°C/W, NO HEATSINK
0
0
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
150
175
Figure 4. Forward Current Derating, Ambient, Per Leg
1000
8.0
DC
C, CAPACITANCE (pF)
6.0
SQUARE
WAVE
4.0
2.0
0
120
130
140
150
160
TC, CASE TEMPERATURE (°C)
170
100
10
1
0.01
180
Figure 5. Current Derating, Case, Per Leg
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV), AVERAGE FORWARD CURRENT (A)
8.0
60
56
52
48
44
40
36
32
28
24
20
16
12
8.0
4.0
0
0.1
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance, Per Leg
TJ = 175°C
SQUARE WAVE
DC
0
2.0
4.0
6.0
8.0
10
12
14
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Power Dissipation, Per Leg
http://onsemi.com
3
16
100
MURH840CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AD
−T−
B
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MEGAHERTZ is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MURH840CT/D