NYT6-5D6DTG, NYT6-5D6DT4G Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com TRIACS 6.0 AMPERES RMS 600 VOLTS Features • • • • • • • Passivated Die for Reliability and Uniformity Four−Quadrant Triggering Blocking Voltage to 600 V On−State Current Rating of 6.0 A RMS at 93°C Low Level Triggering and Holding Characteristics Epoxy Meets UL 94 V−0 @ 0.125 in These are Pb−Free Devices MT2 MT1 G MARKING DIAGRAMS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) VDRM, VRRM 600 V On−State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 85°C) IT(RMS) 6.0 A ITSM 60 A I2t 6.6 A2sec PGM 2.0 W PG(AV) 1.0 W Peak Gate Current (Pulse Width ≤ 20 sec, TC = 93°C) IGM 4.0 A Peak Gate Voltage (Pulse Width ≤ 20 sec, TC = 93°C) VGM 5.0 V TJ −40 to 110 °C Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJinitial = 25°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 sec, TC = 93°C) Average Gate Power (t = 8.3 msec, TC = 93°C) Operating Junction Temperature Range Storage Temperature Range Tstg 4 1 2 −40 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. 3 DPAK CASE 369C STYLE 6 YWW NYT 6−5D6G 4 1 IPAK CASE 369D STYLE 6 2 YWW NYT 6−5D6G 3 Y = WW = NYT6−5D6 = G = Year Work Week Device Code Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 2 1 Publication Order Number: NYT6−5D6D/D NYT6−5D6DTG, NYT6−5D6DT4G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes (Note 3) Symbol Max Unit RJC RJA RJA 3.5 88 80 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM − − − − 0.001 0.5 mA Forward On−State Voltage (ITM = ±8.5 A) VTM − − 1.6 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 ) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT − − − − − − − − 5.0 5.0 5.0 10 Gate Trigger Voltage (VD = 12 V, RL = 30 ) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT − − − − − − − − 1.3 1.3 1.3 1.3 Gate Non−Trigger Voltage (Continuous dc) − (VD = 12 V, RL = 30 , TJ = 110°C) All Four Quadrants VGD 0.2 0.4 − V Holding Current (VD = 12 V, Initiating Current = ±100 mA) IH − − 20 mA Latching Current (VD = 12 V, IG = 60 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IL − − − − − − − 30 30 30 30 − 1.5 − 60 − − − − 50 OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; Gate Open) TJ = 25°C TJ = 110°C ON CHARACTERISTICS mA V mA DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/sec, TJ = 110°C, f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 , CS = 0.03 fd) With snubber di/dt(c) Critical Rate of Rise of Off−State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) dv/dt Critical Rate of Rise of On−State Current (TJ = 110°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt A/ms V/s A/s 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8″ from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. ORDERING INFORMATION Package Type Package Shipping† NYT6−5D6DTG IPAK (Pb−Free) 369D 75 Units / Rail NYT6−5D6DT4G DPAK (Pb−Free) 369C 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NYT6−5D6DTG, NYT6−5D6DT4G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off−State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off−State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On−State Voltage IH Holding Current VTM on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM 110 P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) NYT6−5D6DTG, NYT6−5D6DT4G = 30° 105 60° 90° 100 α α 95 120° = CONDUCTION ANGLE 180° dc 90 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5.0 α α 120° 90° 4.0 = CONDUCTION ANGLE 3.0 2.0 60° = 30° 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT(RMS), RMS ON−STATE CURRENT (A) IT(RMS), RMS ON−STATE CURRENT (A) Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation r(t) , TRANSIENT RESISTANCE (NORMALIZED) 10 TJ = 125°C 0.1 ZJC(t) = RJC(t)Sr(t) 0.01 1.0 10 100 1000 t, TIME (ms) Figure 4. Transient Thermal Response TJ = 25°C 0.1 0.01 TJ = −40°C 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (V) 4 Figure 3. Maximum On−State Voltage Characteristics http://onsemi.com 4 4.0 1.0 0.1 1 0.001 0 dc 180° 4.0 100 IT, INSTANTANEOUS ON−STATE CURRENT (A) 6.0 10 k NYT6−5D6DTG, NYT6−5D6DT4G 0.9 VGT, GATE TRIGGER VOLTAGE (V) IGT, GATE TRIGGER CURRENT (mA) 21 18 15 Q4 12 9 Q2 & Q3 6 Q1 3 0 −40 −20 −10 5 20 35 50 65 80 Q4 0.8 0.7 0.6 0.5 0.4 0.3 −40 −20 −10 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 35 50 65 80 95 110 125 10 16 Q2 IH, HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) 20 Figure 6. Typical Gate Trigger Voltage 18 14 12 10 Q3 & Q4 8 4 5 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current 6 Q1 & Q3 Q2 Q1 2 0 −40 −20 −10 5 20 35 50 65 80 8 MTI1 Negative 6 4 2 MTI1 Positive 0 −40 −20 −10 95 110 125 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Latching Current Figure 8. Typical Holding Current http://onsemi.com 5 NYT6−5D6DTG, NYT6−5D6DT4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 3.00 0.118 1.60 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NYT6−5D6DTG, NYT6−5D6DT4G PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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