NUD3112 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. http://onsemi.com MARKING DIAGRAMS 3 Features 1 • Provides a Robust Driver Interface Between D.C. Relay Coil and • • • • • • • SOT−23 CASE 318 STYLE 21 2 Sensitive Logic Circuits Optimized to Switch Relays of 12 V Rail Capable of Driving Relay Coils Rated up to 6.0 W at 12 V Internal Zener Eliminates the Need of Free−Wheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation Low VDS(ON) Reduces System Current Drain SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices JW5 MG G JW5 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) SC−74 CASE 318F STYLE 7 6 1 JW5 MG G JW5 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Typical Applications • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette • Recorders Industrial: Small Appliances, Security Systems, Automated Test Equipment, Garage Door Openers ORDERING INFORMATION Package Shipping† NUD3112LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SZNUD3112LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NUD3112DMT1G SC−74 (Pb−Free) 3000 / Tape & Reel SZNUD3112DMT1G SC−74 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (3) 1.0 k Gate (1) Drain (6) Gate (2) 1.0 k 300 k 1.0 k 300 k Source (2) © Semiconductor Components Industries, LLC, 2014 Gate (5) 300 k Source (1) CASE 318 July, 2014 − Rev. 10 Drain (3) Source (4) CASE 318F 1 Publication Order Number: NUD3112/D NUD3112 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Value Unit VDSS Drain to Source Voltage – Continuous Rating 14 Vdc VGS Gate to Source Voltage – Continuous 6 Vdc ID Drain Current – Continuous 500 mA Ez Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) 50 mJ TJ Junction Temperature 150 °C TA Operating Ambient Temperature −40 to 85 °C Tstg Storage Temperature Range −65 to +150 °C PD Total Power Dissipation (Note 1) Derating Above 25°C SOT−23 225 1.8 mW mW/°C PD Total Power Dissipation (Note 1) Derating Above 25°C SC−74 380 3.0 mW mW/°C SOT−23 SC−74 556 329 °C/W 2000 V RqJA Thermal Resistance Junction−to−Ambient (Note 1) ESD Human Body Model (HBM) According to EIA/JESD22/A114 1. Mounted onto minimum pad board. TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS VBRDSS Drain to Source Sustaining Voltage (Internally Clamped) (ID = 10 mA) 14 16 17 V BVGSO Ig = 1.0 mA − − 8 V Drain to Source Leakage Current (VDS = 12 V , VGS = 0 V, TA = 25°C) (VDS = 12 V, VGS = 0 V, TA = 85°C) − − − − 20 40 mA Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) − − − − 35 65 mA Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TA = 85°C) 0.8 0.8 1.2 − 1.4 1.4 V Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TA=85°C) (ID = 500 mA, VGS = 5.0 V, TA=85°C) − − − − − − − − − − 1.2 1.3 0.9 1.3 0.9 W 300 200 400 − − − mA 350 490 − mmhos IDSS IGSS ON CHARACTERISTICS VGS(th) RDS(on) IDS(on) gFS Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TA = 85°C) Forward Transconductance (VOUT = 12.0 V, IOUT = 0.25 A) http://onsemi.com 2 NUD3112 TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit DYNAMIC CHARACTERISTICS Ciss Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) − 23 − pF Coss Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) − 30 − pF Crss Transfer Capacitance (VDS = 12.0 V, VGS = 0 V, f = 10 kHz) − 7 − pF Min Typ Max Units Propagation Delay Times: High to Low Propagation Delay; Figure 1 (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1 (VDS = 12 V, VGS = 5.0 V) − − 21 91 − − Transition Times: Fall Time; Figure 1 (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1 (VDS = 12 V, VGS = 5.0 V) − − 36 61 − − SWITCHING CHARACTERISTICS Characteristic Symbol tPHL tPLH tf tr nS nS VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 1. Switching Waveforms http://onsemi.com 3 NUD3112 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 1 VGS = 5.0 V VDS = 0.8 V VGS = 3.0 V 0.1 VGS = 2.0 V 0.01 VGS = 1.5 V I D, DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 1 0.001 VGS = 1.0 V 0.0001 0.00001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.1 0.01 125°C 0.001 85°C 25°C 0.0001 0.00001 0.8 0.5 −40°C 1.0 1200 1000 800 ID = 0.25 A VGS = 3.0 V ID = 0.5 A VGS = 3.0 V ID = 0.5 A VGS = 5.0 V 600 400 200 0 −50 −25 0 25 75 50 TEMPERATURE (°C) 100 125 4500 3500 3000 2500 125°C 25°C −40°C 1500 1000 500 0 0.6 0.8 1 1.2 1.4 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 Figure 5. RDS(ON) Variation vs. Gate−to−Source Voltage 21 IZ = 10 mA V Z , ZENER CLAMP VOLTAGE (V) V Z , ZENER VOLTAGE (V) 85°C 2000 15.98 15.94 15.92 15.90 15.88 15.86 15.84 15.82 15.80 −50 ID = 250 mA 4000 Figure 4. On−Resistance Variation vs. Temperature 15.96 5.0 Figure 3. Transfer Function RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 2. Output Characteristics 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) −25 0 50 75 25 TEMPERATURE (°C) 100 125 20 19 18 17 16 15 85°C 25°C 14 −40°C 13 0.1 Figure 6. Zener Voltage vs. Temperature 1 10 100 IZ, ZENER CURRENT (mA) 1000 Figure 7. Zener Clamp Voltage vs. Zener Current http://onsemi.com 4 NUD3112 45 1.2 1.1 VGS = 3.0 V 1 125°C 0.9 85°C 40 IGSS, GATE LEAKAGE (mA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 0.8 0.7 0.6 25°C −40°C 0.5 35 30 25 VGS = 5.0 V 20 15 VGS = 3.0 V 10 5 0 −50 0.4 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 ID, DRAIN CURRENT (A) Figure 8. On−Resistance vs. Drain Current and Temperature −25 0 25 50 75 TEMPERATURE (°C) 100 Figure 9. Gate Leakage vs. Temperature +12V Relay +5V / 3.3V 1.0 k clamp Zener Logic ESD Zener 300 k ESD Zener Figure 10. Typical Application Circuit http://onsemi.com 5 clamp Zener 125 NUD3112 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° NUD3112 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N D 6 5 4 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. E HE 1 DIM A A1 b c D E e L HE q b e 0.05 (0.002) q C A L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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