MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation 1 2 3 1 2 • Solder dip 260 °C, 40 s 3 MBRF20H200CT MBR20H200CT • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TO-262AA TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling and polarity protection applications. 1 3 2 SB20H200CT-1 PIN 1 PIN 2 PIN 3 CASE MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 200 V IFSM 290 A Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test VF 0.75 V Mounting Torque: 10 in-lbs maximum TJ 175 °C Polarity: As marked MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR20H200CT UNIT Maximum repetitive peak reverse voltage VRRM 200 V Working peak reverse voltage VRWM 200 V Maximum DC blocking voltage VDC 200 V IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 290 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) ERSM 20 mJ Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH EAS 20 mJ Electrostatic discharge capacitor voltage human body model air discharge: C = 100 pF, R 0 1.5 kΩ VC 25 kV dV/dt 10 000 V/µs TJ, TSTG - 65 to + 175 °C VAC 1500 V Maximum average forward rectified current total device per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute Document Number: 88786 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) TEST PARAMETER IF = 10 A IF = 10 A IF = 20 A IF = 20 A Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode at working peak reverse voltage (1) Typical junction capacitance SYMBOL TYP. MAX. UNIT TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C VF 0.81 0.65 0.87 0.74 0.88 0.75 0.97 0.85 V TJ = 25 °C TJ = 125 °C IR 5.0 1.0 µA mA CJ 250 pF 4.0 V, 1 MHz Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR MBRF SB UNIT RθJC 2.0 4.0 2.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR20H200CT-E3/45 2.06 45 50/tube Tube ITO-220AB MBRF20H200CT-E3/45 2.20 45 50/tube Tube TO-262AA SB20H200CT-1E3/45 1.58 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 Average Forward Current (A) Average Forward Current (A) MBR, MBRB 20 MBRF 15 10 5 0 25 50 75 100 125 150 175 350 325 300 275 250 225 200 175 150 125 100 75 50 25 0 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve (Total) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88786 Revision: 18-Apr-08 MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor 10 000 TJ = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 °C TJ = 75 °C 1 TJ = 25 °C 0.1 0.1 1000 100 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 1000 TJ = 175 °C 100 TJ = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 000 TJ = 75 °C 10 1 TJ = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 10 MBRF 1 0.1 0.01 MBR, MBRB 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88786 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) TYP. ITO-220AB 0.185 (4.70) 0.169 (4.30) 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.408 (10.36) 0.392 (9.96) 0.055 (1.40) 0.049 (1.25) 1.29 (3.28) DIA. 1.21 (3.08) 0.138 (3.50) 0.122 (3.10) 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) TYP. 0.331 (8.40) TYP. 1 PIN 2 3 0.370 (9.40) 0.354 (9.00) 0.630 (16.00) 0.614 (15.60) 1.161 (29.48) 1.106 (28.08) 0.118 (3.00) TYP. 1 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. PIN 2 0.264 (6.70) 0.248 (6.50) 0.320 (8.12) 0.304 (7.72) 0.633 (16.07) 0.601 (15.67) 3 0.117 (2.96) 0.101 (2.56) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. 0.270 (6.88) 0.255 (6.48) 0.638 (16.20) 0.598 (15.20) 0.634 (16.10) 0.618 (15.70) 0.193 (4.90) 0.177 (4.50) 0.108 (2.74) 0.092 (2.34) 0.396 (10.05) 0.372 (9.45) 0.024 (0.60) 0.018 (0.45) 0.039 (1.00) 0.024 (0.60) 0.058 (1.47) MAX. 0.100 (2.54) TYP. 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) TO-262AA 0.398 (10.10) 0.382 (9.70) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.039 (1.00) 0.055 (1.40) 0.049 (1.25) K 0.370 (9.40) 0.354 (9.00) 1 PIN 2 3 0.425 (10.80) 0.393 (10.00) 0.488 (12.4) 0.472 (12.00) 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. www.vishay.com 4 0.405 (10.28) 0.389 (9.88) 0.062 (1.57) 0.054 (1.37) 0.024 (0.60) 0.018 (0.45) 0.200 (5.08) TYP. For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88786 Revision: 18-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1