AN11222 BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC Rev. 2 — 8 January 2013 Application note Document information Info Content Keywords BGA3018, Evaluation board, CATV, Drop amplifier Abstract This application note describes the schematic and layout requirements for using the BGA3018 as a CATV drop amplifier. AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC Revision history Rev Date Description 1 20121012 First publication 2 20130108 Updated with improved application circuit and test data Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 2 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 1. Introduction The BGA3018 customer evaluation board enables the user to evaluate the performance of the wideband CATV MMIC amplifier BGA3018. The BGA3018 performance information is available in the BGA3018 datasheet. This application note describes the evaluation board schematic and layout requirements for using the BGA3018 as a CATV drop amplifier between 40 MHz and 1003 MHz. The BGA3018 is fabricated in the BiCMOS process and packaged in a lead-free 3-pin SOT89 package. The BGA3018 is surface-mounted on an evaluation board with element matching and DC decoupling circuitry. The amplifier MMIC comprises a two stage amplifier with internal bias network and operates over a frequency range of 5 MHz to 1003 MHz with a supply voltage between 5 V and 8 V. 2. System features • • • • • • • • 18 dB gain Internally biased Flat gain between 40 MHz and 1003 MHz Noise figure of 2.2 dB High linearity with an IP3O of 40 dBm and IP2O of 60 dBm 75 Ω input and output impedance Unconditionally stable Excellent input and output return loss 3. Customer evaluation kit contents The evaluation kit contains the following items: • ESD safe casing • BGA3018 evaluation board • BGA3018 SOT89 samples AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 3 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 4. Application Information For evaluation purposes an evaluation board is available. The evaluation circuit can be seen in figure 1 and the corresponding PCB is shown in figure 2. Table 1 shows the bill of materials. 4.1 Evaluation board circuit Fig 1. BGA3018 evaluation circuit The power supply is applied on the center pin of connector J3 and is applied to the MMIC via chokes L4 and L2 which provides RF blocking to the supply line. Choke L4 is put in series with choke L2 to improve the performance at frequencies below 100 MHz. Capacitors C4 and C5 are supply decoupling capacitors. At the F-connector J1 the RF input signal is applied where capacitor C1 provides DCblocking, followed by L1 for input matching (Z = 75 Ω). Resistors R1 and R2 are used as feedback resistors to set the gain and slope. Two resistors are used to lower the influence of the parasitic capacitance from the circuit board. Capacitor C2 provides DCblocking between the input and output of the MMIC. Inductor L3 provides the output matching (Z = 75 Ω) at the MMICs output followed by C3 for DC-blocking before the RF signal is available at F-connector J2. AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 4 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 4.2 Evaluation board layout PCB material PCB thickness PCB size εr Copper thickness Fig 2. = FR4 = 1.5 mm = 40 mm x 40 mm = 4.6 = 35 µm BGA3018 evaluation board layout For optimum distortion performance it is important to have enough ground vias underneath and around the MMICs ground pins. This lowers the inductance to the ground plane. The evaluation board is made with two layer FR4 material. AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 5 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 4.3 Bill of materials Table 1. Evaluation board BOM Circuit Description Qty Mfr Reference Manufacturer number Supplier Supplier part number U1 BGA3018 1 NXP BGA3018 NXP BGA3018 C1, C2, 10 nF 4 Murata GRM155R71E103KA01D Digikey 490-1312-1-ND C5 100 pF 1 Murata GRM1555C1H101JZ01D Digikey 490-3458-1-ND L1, L3 3.9 nH 2 Murata LQG15HS3N9S02D Digikey 490-2617-1-ND L2 Choke 1 Murata BLM15HD182SN1D Digikey 490-5196-1-ND L4 880nH 1 Murata LQH31HNR88K03L Digikey LQH31HNR88K03LND R1 470 Ω 1 Yageo RC0402FR-07470RL Digikey 311-470LRCT-ND R2 300 Ω 1 Yageo RC0402FR-07300RL Digikey 311-300LRCT-ND J1, J2 75 Ω Fconnector 2 Bomar 861V509ER6 Mouser 678-861V509ER6 J3 Header 3 1 Molex 90121-0763 Digikey WM8109-ND C3, C4 AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 6 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 5. Measurement results at Vcc = 8 V 5.1 S-Parameters -10 -12 (1) (2) (3) -14 S11[dB] -16 -18 -20 -22 -24 -26 -28 -30 40 240 440 640 840 1040 840 1040 Frequency[MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 3. Input matching (S11); Vcc = 8 V -10 -12 -14 S22[dB] -16 -18 -20 (1) (2) (3) -22 -24 -26 -28 -30 40 240 440 640 Frequency[MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 4. AN11222 Application note Output matching (S22); Vcc = 8 V All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 7 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 21 (1) (2) (3) 20 S21[dB] 19 18 17 16 15 40 240 640 440 840 1040 840 1040 Frequency[MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 5. Gain (S21); Vcc = 8 V 1.3 1.2 K-Factor 1.1 1 (1) (2) (3) 0.9 0.8 0.7 40 240 440 640 Frequency[MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 6. AN11222 Application note K-factor; Vcc = 8 V All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 8 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 5.2 Distortion -65 (1) CTB [dBc] -70 -75 -80 -85 -90 0 200 400 600 800 1000 800 1000 Frequency [MHz] (1) Tamb = +25 °C 132 channels NTSC , Vo = 30 dBmV Fig 7. Composite triple beat (CTB); Vcc = 8 V -55 -56 -57 (1) CSO [dBc] -58 -59 -60 -61 -62 -63 -64 -65 0 200 400 600 Frequency [MHz] (1) Tamb = +25 °C 132 channels NTSC , Vo = 30 dBmV Fig 8. AN11222 Application note Composite second order (CSO); Vcc = 8 V All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 9 of 23 AN11222 NXP Semiconductors XMOD [dBc] BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC -60 -61 -62 -63 -64 -65 -66 -67 -68 -69 -70 -71 -72 -73 -74 -75 (1) 0 200 400 600 800 1000 Frequency [MHz] (1) Tamb = +25 °C 132 channels NTSC , Vo = 30 dBmV Fig 9. Cross modulation (XMOD); Vcc = 8 V 5.3 Noise figure 4.0 Noise Figure [dB] 3.5 (1) (2) (3) 3.0 2.5 2.0 1.5 1.0 40 240 440 640 840 1040 Frequency [MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 10. Noise figure (NF); Vcc = 8 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 10 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 5.4 Output P1dB 27 26 (1) (2) (3) 25 P1dB(out) 24 23 22 21 20 19 0 200 400 600 800 1000 1200 Frequency [MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 11. Output P1dB; Vcc = 8 V 5.5 Output IP2 80 Output IP2 [dBm] 75 (1) (2) (3) 70 65 60 55 50 45 40 0 200 400 600 800 1000 1200 Frequency [MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C f2 = f1 ± 6MHz , input power = -20 dBm Fig 12. Output IP2; Vcc = 8 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 11 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 5.6 Output IP3 60 Output IP3 [dBm] 55 (1) (2) (3) 50 45 40 35 30 0 200 400 600 800 1000 1200 Frequency [MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C f2 = f1 ± 6MHz , input power = -20 dBm Fig 13. Output IP3; Vcc = 8 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 12 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 6. Measurement results at Vcc = 5 V 6.1 S-Parameters -10 (1) (2) (3) -12 -14 S11[dB] -16 -18 -20 -22 -24 -26 -28 -30 40 240 440 640 840 1040 840 1040 Frequency[MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 14. Input matching (S11); Vcc = 5 V -10 -12 -14 S22[dB] -16 -18 -20 (1) (2) (3) -22 -24 -26 -28 -30 40 240 440 640 Frequency[MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 15. Output matching (S22); Vcc = 5 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 13 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 21 (1) (2) (3) 20 S21[dB] 19 18 17 16 15 40 240 440 640 840 1040 Frequency[MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 16. Gain (S21); Vcc = 5 V 1.3 1.2 K-Factor 1.1 1 (1) (2) (3) 0.9 0.8 0.7 40 240 440 640 840 1040 Frequency[MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 17. K-factor; Vcc = 5 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 14 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 6.2 Distortion -60 (1) CTB [dBc] -65 -70 -75 -80 -85 0 200 400 600 800 1000 800 1000 Frequency [MHz] (1) Tamb = +25 °C 132 channels NTSC , Vo = 30 dBmV Fig 18. Composite triple beat (CTB); Vcc = 5 V -50 -51 -52 (1) CSO [dBc] -53 -54 -55 -56 -57 -58 -59 -60 0 200 400 600 Frequency [MHz] (1) Tamb = +25 °C 132 channels NTSC , Vo = 30 dBmV Fig 19. Composite second order (CSO); Vcc = 5 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 15 of 23 AN11222 NXP Semiconductors XMOD [dBc] BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC -60 -61 -62 -63 -64 -65 -66 -67 -68 -69 -70 -71 -72 -73 -74 -75 (1) 0 200 400 600 800 1000 Frequency [MHz] (1) Tamb = +25 °C 132 channels NTSC , Vo = 30 dBmV Fig 20. Cross modulation (XMOD); Vcc = 5 V 6.3 Noise figure 4.0 Noise Figure [dB] 3.5 (1) (2) (3) 3.0 2.5 2.0 1.5 1.0 40 240 440 640 840 1040 Frequency [MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 21. Noise figure (NF); Vcc = 5 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 16 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 6.4 Output P1dB 21 20 P1dB(out) (1) (2) (3) 19 18 17 0 200 400 600 800 1000 1200 1000 1200 Frequency [MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C Fig 22. Output P1dB; Vcc = 5 V 6.5 Output IP2 80 Output IP2 [dBm] 75 (1) (2) (3) 70 65 60 55 50 45 40 0 200 400 600 800 Frequency [MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C f2 = f1 ± 6MHz , input power = -20 dBm Fig 23. Output IP2; Vcc = 5 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 17 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 6.6 Output IP3 55 Output IP3 [dBm] 50 (1) (2) (3) 45 40 35 30 25 0 200 400 600 800 1000 1200 Frequency [MHz] (1) Tamb = -40 °C (2) Tamb = +25 °C (3) Tamb = +85 °C f2 = f1 ± 6MHz , input power = -20 dBm Fig 24. Output IP3; Vcc = 5 V AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 18 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 7. Abbreviations Table 2. Abbreviations Acronym Description AN11222 Application note AC Alternating Current CATV Community Antenna TeleVision DC Direct Current ESD Electro Static Discharge MMIC Monolithic Microwave Integrated Circuit NTSC National Television Standards Committee PCB Printed Circuit Board RF Radio Frequency SMD Surface Mounted Device All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 19 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 8. Legal information 8.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 8.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of noninfringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 8.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 20 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 9. List of figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. Fig 17. Fig 18. Fig 19. Fig 20. Fig 21. Fig 22. Fig 23. Fig 24. BGA3018 evaluation circuit ............................... 4 BGA3018 evaluation board layout .................... 5 Input matching (S11); Vcc = 8 V ....................... 7 Output matching (S22); Vcc = 8 V .................... 7 Gain (S21); Vcc = 8 V ....................................... 8 K-factor; Vcc = 8 V ............................................ 8 Composite triple beat (CTB); Vcc = 8 V ............ 9 Composite second order (CSO); Vcc = 8 V ...... 9 Cross modulation (XMOD); Vcc = 8 V............. 10 Noise figure (NF); Vcc = 8 V ........................... 10 Output P1dB; Vcc = 8 V .................................. 11 Output IP2; Vcc = 8 V ..................................... 11 Output IP3; Vcc = 8 V ..................................... 12 Input matching (S11); Vcc = 5 V ..................... 13 Output matching (S22); Vcc = 5 V .................. 13 Gain (S21); Vcc = 5 V ..................................... 14 K-factor; Vcc = 5 V .......................................... 14 Composite triple beat (CTB); Vcc = 5 V .......... 15 Composite second order (CSO); Vcc = 5 V .... 15 Cross modulation (XMOD); Vcc = 5 V............. 16 Noise figure (NF); Vcc = 5 V ........................... 16 Output P1dB; Vcc = 5 V .................................. 17 Output IP2; Vcc = 5 V ..................................... 17 Output IP3; Vcc = 5 V ..................................... 18 AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 January 2013 © NXP B.V. 2013. All rights reserved. 21 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 10. List of tables Table 1. Table 2. Evaluation board BOM ...................................... 6 Abbreviations .................................................. 19 AN11222 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 —8 January 2013 © NXP B.V. 2013. All rights reserved. 22 of 23 AN11222 NXP Semiconductors BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC 11. Contents 1. 2. 3. 4. 4.1 4.2 4.3 5. 5.1 5.2 5.3 5.4 5.5 5.6 6. 6.1 6.2 6.3 6.4 6.5 6.6 7. 8. 8.1 8.2 8.3 9. 10. 11. Introduction ......................................................... 3 System features................................................... 3 Customer evaluation kit contents ...................... 3 Application Information ...................................... 4 Evaluation board circuit ...................................... 4 Evaluation board layout...................................... 5 Bill of materials ................................................... 6 Measurement results at Vcc = 8 V...................... 7 S-Parameters ..................................................... 7 Distortion ............................................................ 9 Noise figure ...................................................... 10 Output P1dB..................................................... 11 Output IP2 ........................................................ 11 Output IP3 ........................................................ 12 Measurement results at Vcc = 5 V.................... 13 S-Parameters ................................................... 13 Distortion .......................................................... 15 Noise figure ...................................................... 16 Output P1dB..................................................... 17 Output IP2 ........................................................ 17 Output IP3 ........................................................ 18 Abbreviations .................................................... 19 Legal information .............................................. 20 Definitions ........................................................ 20 Disclaimers....................................................... 20 Trademarks ...................................................... 20 List of figures..................................................... 21 List of tables ...................................................... 22 Contents ............................................................. 23 Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP B.V. 2013. All rights reserved. For more information, visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 January 2013 Document identifier: AN11222