1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) 1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic™ axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. AXIAL LEAD CASE 41A PLASTIC Specification Features: • • • • • • Working Peak Reverse Voltage Range − 8 V to 45 V Peak Power − 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V Response Time is Typically < 1 ns L MPTE −xxC 1N 63xx YYWW L ICTE −xxC YYWW Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are L = Assembly Location MPTE−xxC = ON Device Code ICTE−xxC = ON Device Code 1N63xx = JEDEC Device Code YY = Year WW = Work Week readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode band does not imply polarity MOUNTING POSITION: Any MAXIMUM RATINGS Rating ORDERING INFORMATION Symbol Value Unit Peak Power Dissipation (Note 1) @ TL ≤ 25°C PPK 1500 Watts Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derated above TL = 75°C PD 5.0 Watts 20 mW/°C RqJL 20 °C/W TJ, Tstg − 65 to +175 °C Thermal Resistance, Junction−to−Lead Operating and Storage Temperature Range 1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2. *Please see 1N6373 – 1N6381 (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45) for Unidirectional Devices © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Device Package Shipping MPTE−xxC Axial Lead 500 Units/Box MPTE−xxCRL4 Axial Lead 1500/Tape & Reel ICTE−xxC* Axial Lead 500 Units/Box ICTE−xxCRL4 Axial Lead 1500/Tape & Reel 1N63xx Axial Lead 500 Units/Box 1N63xxRL4 Axial Lead 1500/Tape & Reel *ICTE−10C Not Available in 500 Units/Box Publication Order Number: 1N6382/D 1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT QVBR I IT VC VBR VRWM IR IR V RWM VBR VC IT Working Peak Reverse Voltage V Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IPP Test Current Bi−Directional TVS Maximum Temperature Variation of VBR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VRWM (Note 2) IR @ VRWM (Volts) 1N6382 MPTE−8C 1N6383 (MPTE−10C) JEDEC Device (ON Device) Device Marking 1N6382 (MPTE−8C) VC @ IPP (Note 4) Breakdown Voltage VBR (Note 3) (Volts) @ IT VC IPP (mA) Min Nom Max (mA) (Volts) 8.0 25 9.4 − − 1.0 1N6383 MPTE−10C 10 2.0 11.7 − − 1N6384 (MPTE−12C) 1N6384 MPTE−12C 12 2.0 14.1 − 1N6385 (MPTE−15C) 1N6385 MPTE−15C 15 2.0 17.6 1N6386 (MPTE−18C) 1N6386 MPTE−18C 18 2.0 1N6387 (MPTE−22C) 1N6387 MPTE−22C 22 1N6388 (MPTE−36C) 1N6388 MPTE−36C 1N6389 (MPTE−45C) VC (Volts) (Note 4) QVBR (A) @ IPP =1A @ IPP = 10 A (mV/°C) 15 100 11.3 11.5 8.0 1.0 16.7 90 13.7 14.1 12 − 1.0 21.2 70 16.1 16.5 14 − − 1.0 25 60 20.1 20.6 18 21.2 − − 1.0 30 50 24.2 25.2 21 2.0 25.9 − − 1.0 37.5 40 29.8 32 26 36 2.0 42.4 − − 1.0 65.2 23 50.6 54.3 50 1N6389 MPTE−45C 45 2.0 52.9 − − 1.0 78.9 19 63.3 70 60 ICTE−10C* ICTE−12C ICTE−10C* ICTE−12C 10 12 2.0 2.0 11.7 14.1 − − − − 1.0 1.0 16.7 21.2 90 70 13.7 16.1 14.1 16.5 8.0 12 ICTE−15C ICTE−18C ICTE−22C ICTE−36C ICTE−15C ICTE−18C ICTE−22C ICTE−36C 15 18 22 36 2.0 2.0 2.0 2.0 17.6 21.2 25.9 42.4 − − − − − − − − 1.0 1.0 1.0 1.0 25 30 37.5 65.2 60 50 40 23 20.1 24.2 29.8 50.6 20.6 25.2 32 54.3 14 18 21 26 NOTES: 2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled. 4. Surge current waveform per Figure 4 and derate per Figures 1 and 2. *Not Available in the 500 Units/Box. http://onsemi.com 2 100 PPK , PEAK POWER (kW) NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C 1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) 100 10 1 0.1ms 1ms 10ms 100 ms 1 ms 80 60 40 20 0 10 ms 0 25 50 tP, PULSE WIDTH Figure 2. Pulse Derating Curve PEAK VALUE − IPP 100 3/8″ 5 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10 ms 3/8″ IPP, VALUE (%) PD , STEADY STATE POWER DISSIPATION (WATTS) Figure 1. Pulse Rating Curve 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) 4 3 HALF VALUE − 50 IPP 2 2 tP 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) 0 200 0 1 2 3 t, TIME (ms) Figure 3. Steady State Power Derating Figure 4. Pulse Waveform http://onsemi.com 3 4 1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 1000 500 200 IT , TEST CURRENT (AMPS) VBR(MIN)=6.0 to 11.7V 19V 42.4V 21.2V TL=25°C tP=10ms 100 50 20 10 5 2 1 VBR(NOM)=6.8 to 13V 20V 24V TL=25°C tP=10ms 200 43V 75V 100 50 20 180V 10 120V 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) Figure 5. Dynamic Impedance 1 0.7 0.5 0.3 DERATING FACTOR IT , TEST CURRENT (AMPS) 1000 500 1.5KE6.8CA through 1.5KE200CA 0.2 PULSE WIDTH 10 ms 0.1 0.07 0.05 1 ms 0.03 100 ms 0.02 10 ms 0.01 0.1 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 Figure 6. Typical Derating Factor for Duty Cycle http://onsemi.com 4 100 1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) APPLICATION NOTES RESPONSE TIME circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 7. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 8. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 ms pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. TYPICAL PROTECTION CIRCUIT Zin LOAD Vin V V Vin (TRANSIENT) VL OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 7. Figure 8. http://onsemi.com 5 1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) OUTLINE DIMENSIONS Transient Voltage Suppressors − Axial Leaded 1500 Watt Peak Power Mosorb MOSORB CASE 41A−04 ISSUE D B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. 4. 041A−01 THRU 041A−03 OBSOLETE, NEW STANDARD 041A−04. D K P P DIM A B D K P A INCHES MIN MAX 0.335 0.374 0.189 0.209 0.038 0.042 1.000 −−− −−− 0.050 MILLIMETERS MIN MAX 8.50 9.50 4.80 5.30 0.96 1.06 25.40 −−− −−− 1.27 K Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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