1N6373 - 1N6381 Series (ICTE-5 - ICTE-36, MPTE-5 - MPTE-45) 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. Cathode AXIAL LEAD CASE 41A PLASTIC L MPTE –xx 1N 63xx YYWW Specification Features: • • • • • • Anode Working Peak Reverse Voltage Range – 5 V to 45 V Peak Power – 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 A Above 10 V Response Time is Typically < 1 ns L ICTE –xx YYWW L = Assembly Location MPTE–xx = ON Device Code ICTE–xx = ON Device Code 1N63xx = JEDEC Device Code YY = Year WW = Work Week Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any ORDERING INFORMATION Device MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1.) @ TL ≤ 25°C PPK 1500 Watts Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derated above TL = 75°C PD 5.0 Watts 20 mW/°C Thermal Resistance, Junction–to–Lead RJL 20 °C/W Forward Surge Current (Note 2.) @ TA = 25°C IFSM 200 Amps TJ, Tstg – 65 to +175 °C Operating and Storage Temperature Range *Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C) for Bidirectional Devices Semiconductor Components Industries, LLC, 2002 June, 2002 – Rev. 2 1 Package Shipping MPTE–xx Axial Lead 500 Units/Box MPTE–xxRL4 Axial Lead 1500/Tape & Reel ICTE–xx Axial Lead 500 Units/Box ICTE–xxRL4 Axial Lead 1500/Tape & Reel 1N63xx Axial Lead 500 Units/Box 1N63xxRL4* Axial Lead 1500/Tape & Reel NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *1N6378 Not Available in 1500/Tape & Reel Publication Order Number: 1N6373/D 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45) ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR IF Parameter VC VBR VRWM Working Peak Reverse Voltage V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Variation of VBR IF Forward Current VF Forward Voltage @ IF IPP Uni–Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A) VRWM (Note 4.) IR @ VRWM (Volts) (A) 1N6373 MPTE–5 5.0 1N6374 (MPTE–8) 1N6374 MPTE–8 1N6375 (MPTE–10) JEDEC Device (ON Device) Device Marking 1N6373 (MPTE–5) Breakdown Voltage VC @ IPP (Note 6.) VC (Volts) (Note 6.) 5.) (Volts) @ IT VC IPP Min Nom Max (mA) (Volts) (A) @ IPP = 1A @ IPP = 10 A (mV/°C) 300 6.0 – – 1.0 9.4 160 7.1 7.5 4.0 8.0 25 9.4 – – 1.0 15 100 11.3 11.5 8.0 1N6375 MPTE–10 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 12 1N6376 (MPTE–12) 1N6376 MPTE–12 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 14 1N6377 (MPTE–15) 1N6377 MPTE–15 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 18 1N6378* (MPTE–18) 1N6378* MPTE–18 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 21 1N6379 (MPTE–22) 1N6379 MPTE–22 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 26 1N6380 (MPTE–36) 1N6380 MPTE–36 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 50 1N6381 (MPTE–45) 1N6381 MPTE–45 45 2.0 52.9 – – 1.0 78.9 19 63.3 70 60 ICTE–5 ICTE–10 ICTE–12 ICTE–5 ICTE–10 ICTE–12 5.0 10 12 300 2.0 2.0 6.0 11.7 14.1 – – – – – – 1.0 1.0 1.0 9.4 16.7 21.2 160 90 70 7.1 13.7 16.1 7.5 14.1 16.5 4.0 8.0 12 ICTE–15 ICTE–18 ICTE–22 ICTE–36 ICTE–15 ICTE–18 ICTE–22 ICTE–36 15 18 22 36 2.0 2.0 2.0 2.0 17.6 21.2 25.9 42.4 – – – – – – – – 1.0 1.0 1.0 1.0 25 30 37.5 65.2 60 50 40 23 20.1 24.2 29.8 50.6 20.6 25.2 32 54.3 14 18 21 26 VBR (Note VBR NOTES: 3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle. 4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 5. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled. 6. Surge current waveform per Figure 5 and derate per Figures 1 and 2. *Not Available in the 1500/Tape & Reel http://onsemi.com 2 100 PPK , PEAK POWER (kW) NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45) 100 10 1 0.1s 1s 10s 100s 1 ms 80 60 40 20 0 10 ms 0 25 50 tP, PULSE WIDTH Figure 1. Pulse Rating Curve 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Figure 2. Pulse Derating Curve 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 10,000 MEASURED @ ZERO BIAS C, CAPACITANCE (pF) 1000 MEASURED @ VRWM 100 10 1 10 100 1000 VBR, BREAKDOWN VOLTAGE (VOLTS) PEAK VALUE - IPP 100 3/8″ 5 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10 s 3/8″ IPP, VALUE (%) PD , STEADY STATE POWER DISSIPATION (WATTS) Figure 3. Capacitance versus Breakdown Voltage 4 3 HALF VALUE 50 IPP 2 2 tP 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) 0 200 0 1 2 3 t, TIME (ms) Figure 4. Steady State Power Derating Figure 5. Pulse Waveform http://onsemi.com 3 4 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45) 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 200 100 50 20 10 5 1000 500 IT , TEST CURRENT (AMPS) VBR(MIN)=6.0 to 11.7V 19V 42.4V 21.2V TL=25°C tP=10s 2 1 VBR(NOM)=6.8 to 13V 20V 24V TL=25°C tP=10s 200 43V 75V 100 50 20 180V 10 120V 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) Figure 6. Dynamic Impedance 1 0.7 0.5 0.3 DERATING FACTOR IT , TEST CURRENT (AMPS) 1000 500 1.5KE6.8CA through 1.5KE200CA 0.2 PULSE WIDTH 10 ms 0.1 0.07 0.05 1 ms 0.03 100 s 0.02 0.01 0.1 10 s 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 Figure 7. Typical Derating Factor for Duty Cycle http://onsemi.com 4 100 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45) APPLICATION NOTES RESPONSE TIME circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 8. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 9. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 s pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. TYPICAL PROTECTION CIRCUIT Zin LOAD Vin V V Vin (TRANSIENT) VL OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 8. Figure 9. http://onsemi.com 5 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45) OUTLINE DIMENSIONS Transient Voltage Suppressors – Axial Leaded 1500 Watt Mosorb MOSORB CASE 41A–04 ISSUE D B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. 4. 041A-01 THRU 041A-03 OBSOLETE, NEW STANDARD 041A-04. D K P P DIM A B D K P A K http://onsemi.com 6 INCHES MIN MAX 0.335 0.374 0.189 0.209 0.038 0.042 1.000 ----0.050 MILLIMETERS MIN MAX 8.50 9.50 4.80 5.30 0.96 1.06 25.40 ----1.27 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45) Notes http://onsemi.com 7 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45) Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 1N6373/D