NS6A5.0AT3G 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional http://onsemi.com The NS6A5.0AT3G is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance and fast response time. The NS6A5.0AT3G is ideally suited for use in computer hard disk drives, communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Cathode Specification Features: • • • • • • • PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS Peak Reverse Working Voltage of 5 V Peak Pulse Power of 600 W (10 x 1000 msec) ESD Rating of Class 3 (>16 kV) per Human Body Model ESD Rating of Class 4 (>8 kV) IEC 61000−4−2 Fast Response Time Low Profile Package This is a Pb−Free Device Anode SMA CASE 403D PLASTIC MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Modified L−Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any 6QE AYWWG 6QE A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NS6A5.0AT3G SMA (Pb−Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 1 1 Publication Order Number: NS6A5.0A/D NS6A5.0AT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°C Thermal Resistance from Junction−to−Lead PD 1.5 W RqJL 20 50 mW/°C °C/W W mW/°C °C/W DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction−to−Ambient PD RqJA 0.5 4.0 250 Forward Surge Current (Note 4) @ TA = 25°C IFSM 40 A TJ, Tstg −65 to +150 °C Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non−repetitive. 2. 1 in square copper pad, FR−4 board. 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IF Parameter VC VBR VRWM Working Peak Reverse Voltage VBR V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional TVS 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non−repetitive duty cycle. ELECTRICAL CHARACTERISTICS Device Device Marking VC @ IPP (Note 8) Breakdown Voltage VRWM (Note 6) IR @ VRWM V mA VBR (Note 7) Volts Min Nom Max @ IT VC IPP Ctyp (Note 9) mA V A pF NS6A5.0AT3G 6QE 5.0 800 6.40 6.7 7.0 10 9.2 65.2 2700 6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25°C. 8. Surge current waveform per Figure 1. 9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C. http://onsemi.com 2 NS6A5.0AT3G tr≤ 10 ms 100 VALUE (%) PEAK VALUE - IPP HALF VALUE 50 IPP 2 tP 0 0 1 2 3 160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25° C PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. 140 120 100 80 60 40 20 0 4 0 25 50 75 100 t, TIME (ms) TA, AMBIENT TEMPERATURE (°C) Figure 1. 10 × 1000 ms Pulse Waveform Figure 2. Pulse Derating Curve Zin LOAD Vin VL Figure 3. Typical Protection Circuit http://onsemi.com 3 125 150 NS6A5.0AT3G PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060 A L A1 c SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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