NS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional http://onsemi.com The NS6AxxAFT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance and fast response time. The NS6AxxAFT3G series is ideally suited for use in computer hard disk drives, communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Cathode Specification Features: • • • • • • • PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS Peak Reverse Working Voltage of 5 V Peak Pulse Power of 600 W (10 x 1000 msec) ESD Rating of Class 3 (>16 kV) per Human Body Model ESD Rating of Class 4 (>8 kV) IEC 61000−4−2 Fast Response Time Low Profile Package This is a Pb−Free Device Anode SMA−FL CASE 403AA MARKING DIAGRAM xxx AYWWG Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Modified L−Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any xxx A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NS6AxxAFT3G SMA−FL (Pb−Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 0 1 Publication Order Number: NS6A5.0AF/D NS6A5.0AFT3G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°C Thermal Resistance from Junction−to−Lead PD 1.5 W RqJL 20 50 mW/°C °C/W W mW/°C °C/W DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction−to−Ambient PD RqJA 0.5 4.0 250 Forward Surge Current (Note 4) @ TA = 25°C IFSM 40 A TJ, Tstg −65 to +150 °C Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non−repetitive. 2. 1 in square copper pad, FR−4 board. 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IF Parameter VC VBR VRWM Working Peak Reverse Voltage VBR V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional TVS 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non−repetitive duty cycle. ELECTRICAL CHARACTERISTICS Device Device Marking VC @ IPP (Note 8) Breakdown Voltage VRWM (Note 6) IR @ VRWM V mA Min Nom VBR (Note 7) Volts Max @ IT VC IPP Ctyp (Note 9) mA V A pF NS6A5.0AFT3G 6AA 5.0 800 6.40 6.7 7.0 10 9.2 65.2 2700 NS6A12AFT3G 6AJ 12 0.5 13.3 14 14.7 1.0 19.5 31 1450 NS6A13AFT3G 6AK 13 5.0 14.4 15.15 15.9 1.0 21.5 27.9 1160 6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25°C. 8. Surge current waveform per Figure 1. 9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C. http://onsemi.com 2 NS6A5.0AFT3G Series tr≤ 10 ms 100 VALUE (%) PEAK VALUE - IPP HALF VALUE 50 IPP 2 tP 0 0 1 2 3 160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25° C PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. 140 120 100 80 60 40 20 0 4 0 25 50 75 100 t, TIME (ms) TA, AMBIENT TEMPERATURE (°C) Figure 1. 10 × 1000 ms Pulse Waveform Figure 2. Pulse Derating Curve Zin LOAD Vin VL Figure 3. Typical Protection Circuit http://onsemi.com 3 125 150 NS6A5.0AFT3G Series PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c 2X MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 RECOMMENDED SOLDER FOOTPRINT* C SIDE VIEW SEATING PLANE 5.56 1.76 b 1.30 2X DIMENSIONS: MILLIMETERS L *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW SURMETIC is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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