ZMY3V9 to ZMY110 Vishay Semiconductors Zener Diodes Features • Silicon Planar Power Zener Diodes. • For use in stablilizing and clipping circuits with high power rating. • The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances are available upon request. • These diodes are also available in the DO-41 case with the type designation ZPY1 ... ZPY100. Mechanical Data 18315 Packaging Codes/Options: GS18/ 5 k per 13 " reel (12 mm tape), 10 k/box GS08/ 1.5 k per 7 " reel (12 mm tape), 12 k/box Case: MELF Glass case Weight: approx. 135 mg Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Ptot 1.0 1) W Symbol Value Zener current (see Table "Characteristics") Power dissipation 1) Valid provided that electrodes are kept at ambient temperature. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Unit °C/W Thermal resistance junction to ambient (max.) RthJA 170 Thermal resistance junction to case (typ.) RthJC 60 °C/W Junction temperature Tj 175 °C Storage temperature TS - 55 to + 175 °C 1) 1) Valid provided that electrodes are kept at ambient temperature. Document Number 85788 Rev. 1.5, 12-Jan-05 www.vishay.com 1 ZMY3V9 to ZMY110 Vishay Semiconductors Electrical Characteristics Partnumber Zener Voltage (2) Dynamic Resistance Temperature Coefficient of Zener Voltage Test Current Reverse Voltage Admissible Zener Current (1) VZ @ IZT rzj @ IZT, f = 1 kHz αVZ @ IZT IZT VR @ IR = 0.5 µA IZ @ Tamb=25°C V Ω 10-4/°C mA V mA 203 typ min max ZMY3V9 min 3.7 4.1 max 7 4 -7 2 100 - ZMY4V3 4 4.6 7 4 -7 3 100 - 182 ZMY4V7 4.4 5 7 4 -7 4 100 - 165 ZMY5V1 4.8 5.4 5 2 -6 5 100 0.7 150 ZMY5V6 5.2 6 2 1 -3 5 100 1.5 135 ZMY6V2 5.8 6.6 2 1 -1 6 100 2 128 ZMY6V8 6.4 7.2 2 1 0 7 100 3 110 ZMY7V5 7 7.9 2 1 0 7 100 5 100 ZMY8V2 7.7 8.7 2 1 3 8 100 6 89 ZMY9V1 8.5 9.6 4 2 3 8 50 7 82 ZMY10 9.4 10.6 4 2 5 9 50 7.5 74 ZMY11 10.4 11.6 7 3 5 10 50 8.5 66 ZMY12 11.4 12.7 7 3 5 10 50 9 60 ZMY13 12.4 14.1 9 4 5 10 50 10 55 ZMY15 13.8 15.8 9 4 5 10 50 11 49 ZMY16 15.3 17.1 10 5 7 11 25 12 44 ZMY18 16.8 19.1 11 5 7 11 25 14 40 ZMY20 18.8 21.2 12 6 7 11 25 15 36 ZMY22 20.8 23.3 13 7 7 11 25 17 34 ZMY24 22.8 25.6 14 8 7 12 25 18 29 ZMY27 25.1 28.9 15 9 7 12 25 20 27 ZMY30 28 32 20 10 7 12 25 22.5 25 ZMY33 31 35 20 11 7 12 25 25 22 ZMY36 34 38 60 25 7 12 10 27 20 ZMY39 37 41 60 30 8 12 10 29 18 ZMY43 40 46 80 35 8 13 10 32 17 ZMY47 44 50 80 40 8 13 10 35 15 ZMY51 48 54 100 45 8 13 10 38 14 ZMY56 52 60 100 50 8 13 10 42 13 ZMY62 58 66 130 60 8 13 10 47 11 ZMY68 64 72 130 65 8 13 10 51 10 ZMY75 70 79 160 70 8 13 10 56 9 ZMY82 77 88 160 80 8 13 10 61 8 ZMY91 85 96 250 120 9 13 5 68 7.5 ZMY100 94 106 250 130 9 13 5 75 7 ZMY110 104 116 250 150 9 13 5 82 6.4 1) Valid provided that electrodes are kept at ambient temperature 2) Tested with pulses tp = 5 ms The ZMY1 is a silicon diode operated in forward direction.Hence, the index of all characteristics and maximum ratings should be "F"instead of "Z". Connect the cathode terminal to the negative pole. For devices in glass case MELF with higher Zener voltage but same power dissipation see types ZMU100 ... ZMU180 www.vishay.com 2 Document Number 85788 Rev. 1.5, 12-Jan-05 ZMY3V9 to ZMY110 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 18289 18312 Figure 1. Dynamic Resistance vs. Zener Current Figure 4. Admissible Power Dissipation vs. Ambient Temperature 18286 18313 Figure 2. Dynamic Resistance vs. Zener Current Figure 5. Pulse Thermal Resistance vs. Pulse Duration ZMY100 ZMY82 ZMY68 ZMY56 ZMY43 18314 Figure 3. Dynamic Resistance vs. Zener Current Document Number 85788 Rev. 1.5, 12-Jan-05 www.vishay.com 3 ZMY3V9 to ZMY110 Vishay Semiconductors 18309 Figure 6. Breakdown Characteristics 18310 Figure 7. Breakdown Characteristics www.vishay.com 4 Document Number 85788 Rev. 1.5, 12-Jan-05 ZMY3V9 to ZMY110 Vishay Semiconductors 18311 Figure 8. Breakdown Characteristics Package Dimensions in mm (Inches) 2.6 (0.102) 2.4 (0.094) Cathode Mark 0.55 (0.022) 5.2 (0.205) 4.8 (0.189) Document Number 85788 Rev. 1.5, 12-Jan-05 1.25 (0.049) MIN 4.00 (0.157) MAX ISO Method E 3.00 (0.118) MIN 6.50 (0.256) REF 18317 www.vishay.com 5 ZMY3V9 to ZMY110 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 85788 Rev. 1.5, 12-Jan-05