AT24C02B - Mature

Features
• Low-voltage and Standard-voltage Operation
•
•
•
•
•
•
•
•
•
•
•
•
•
•
– 1.8 (VCC = 1.8V to 5.5V)
Internally Organized 256 x 8 (2K)
Two-wire Serial Interface
Schmitt Trigger, Filtered Inputs for Noise Suppression
Bidirectional Data Transfer Protocol
1 MHz (5V), 400 kHz (1.8V, 2.5V, 2.7V) Compatibility
Write Protect Pin for Hardware Data Protection
8-byte Page (2K) Write Modes
Partial Page Writes Allowed
Self-timed Write Cycle (5 ms max)
High-reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 5-lead SOT23,
8-lead TSSOP and 8-ball dBGA2 Packages
Lead-free/Halogen-free
Available in Automotive
Die Sales: Wafer Form and Tape and Reel
Description
The AT24C02B provides 2048 bits of serial electrically erasable and programmable
read-only memory (EEPROM) organized as 256 words of 8 bits each. The device is
optimized for use in many industrial and commercial applications where low-power
and low-voltage operation are essential. The AT24C02B is available in space-saving
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 5-lead
SOT23, 8-lead TSSOP, and 8-ball dBGA2 packages and is accessed via a Two-wire
serial interface. In addition, the AT24C02B is available in 1.8V (1.8V to 5.5V) version.
Table 0-1.
Pin Name
Pin Configuration
Function
A0 - A2
Address Inputs
SDA
Serial Data
SCL
Serial Clock Input
WP
Write Protect
GND
Ground
VCC
Power Supply
Note:
8-lead Ultra-Thin
Mini-MAP (MLP 2x3)
VCC
WP
SCL
SDA
8
7
6
5
1
2
3
4
A0
A1
A2
GND
8
1 A0
7
2 A1
6
3 A2
5
4 GND
Bottom View
8-lead TSSOP
8-lead SOIC
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
For use of 5-lead SOT23, the
software A2, A1, and A0 bits in
5-lead SOT23
the device address word
WP
1
5
must be set to zero to prop- SCL
erly communicate.
GND
2
SDA
3
4
VCC
2K (256 x 8)
AT24C02B
Not
Recommended
for New Design
8-ball dBGA2
VCC
WP
SCL
SDA
Bottom View
A0
A1
A2
GND
Two-wire
Serial EEPROM
A0
A1
A2
GND
1
2
3
4
VCC
WP
SCL
SDA
8
7
6
5
8-lead PDIP
A0
A1
A2
GND
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
5126H–SEEPR–8/07
Absolute Maximum Ratings
Operating Temperature ................................ –55C to +125C
*NOTICE:
Storage Temperature.................................... –65C to +150C
Voltage on Any Pin
with Respect to Ground ....................................–1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
DC Output Current........................................................ 5.0 mA
Figure 0-1.
Block Diagram
VCC
GND
WP
START
STOP
LOGIC
SERIAL
CONTROL
LOGIC
LOAD
DEVICE
ADDRESS
COMPARATOR
A2
A1
A0
R/W
EN
H.V. PUMP/TIMING
COMP
LOAD
DATA RECOVERY
INC
DATA WORD
ADDR/COUNTER
Y DEC
X DEC
SCL
SDA
EEPROM
SERIAL MUX
DOUT/ACK
LOGIC
DIN
DOUT
1. Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM
device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is opendrain driven and may be wire-ORed with any number of other open-drain or open-collector
devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address inputs
that are hard wired for the AT24C02B. As many as eight 2K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section).
WRITE PROTECT (WP): The AT24C02B has a write protect pin that provides hardware data
protection. The write protect pin allows normal read/write operations when connected to ground
2
AT24C02B
5126H–SEEPR–8/07
AT24C02B
(GND). When the write protect pin is connected to VCC, the write protection feature is enabled
and operates as shown in Table 1-1.
Table 1-1.
WP Pin
Status
Write Protect
Part of the Array Protected
24C02B
At VCC
Full (2K) Array
At GND
Normal Read/Write Operations
2. Memory Organization
AT24C02B, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each, the 2K
requires an 8-bit data word address for random word addressing.
3
5126H–SEEPR–8/07
Table 2-1.
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25C, f = 1.0 MHz, VCC = +1.8V
Symbol
Test Condition
CI/O
CIN
Note:
Max
Units
Conditions
Input/Output Capacitance (SDA)
8
pF
VI/O = 0V
Input Capacitance (A0, A1, A2, SCL)
6
pF
VIN = 0V
1. This parameter is characterized and is not 100% tested.
Table 2-2.
DC Characteristics
Applicable over recommended operating range from: TAI = –40C to +85C, VCC = +1.8V to +5.5V, VCC = +1.8V to +5.5V
(unless otherwise noted)
Symbol
Parameter
VCC1
Supply Voltage
VCC2
Max
Units
1.8
5.5
V
Supply Voltage
2.5
5.5
V
VCC3
Supply Voltage
2.7
5.5
V
VCC4
Supply Voltage
4.5
5.5
V
ICC
Supply Current VCC = 5.0V
READ at 100 kHz
0.4
1.0
mA
ICC
Supply Current VCC = 5.0V
WRITE at 100 kHz
2.0
3.0
mA
ISB1
Standby Current VCC = 1.8V
VIN = VCC or VSS
0.6
3.0
µA
ISB2
Standby Current VCC = 2.5V
VIN = VCC or VSS
1.4
4.0
µA
ISB3
Standby Current VCC = 2.7V
VIN = VCC or VSS
1.6
4.0
µA
ISB4
Standby Current VCC = 5.0V
VIN = VCC or VSS
8.0
18.0
µA
ILI
Input Leakage Current
VIN = VCC or VSS
0.10
3.0
µA
ILO
Output Leakage Current
VOUT = VCC or VSS
0.05
3.0
µA
Input Low Level
VIL
Test Condition
Min
Typ
(1)
–0.6
VCC x 0.3
V
(1)
VCC x 0.7
VCC + 0.5
V
VIH
Input High Level
VOL2
Output Low Level VCC = 3.0V
IOL = 2.1 mA
0.4
V
Output Low Level VCC = 1.8V
IOL = 0.15 mA
0.2
V
VOL1
Note:
1. VIL min and VIH max are reference only and are not tested.
Table 2-3.
AC Characteristics
Applicable over recommended operating range from TAI = –40C to +85C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and
100 pF (unless otherwise noted)
1.8, 2.5, 2.7
Symbol
Parameter
fSCL
Clock Frequency, SCL
tLOW
Clock Pulse Width Low
1.2
0.4
µs
tHIGH
Clock Pulse Width High
0.6
0.4
µs
tI
Noise Suppression Time
tAA
Clock Low to Data Out Valid
4
Min
Max
5.0-volt
Min
400
50
0.1
0.9
0.05
Max
Units
1000
kHz
40
ns
0.55
µs
AT24C02B
5126H–SEEPR–8/07
AT24C02B
Table 2-3.
AC Characteristics
Applicable over recommended operating range from TAI = –40C to +85C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and
100 pF (unless otherwise noted)
1.8, 2.5, 2.7
Symbol
Parameter
Min
tBUF
Time the bus must be free before a new transmission can start
1.2
0.5
µs
tHD.STA
Start Hold Time
0.6
0.25
µs
tSU.STA
Start Setup Time
0.6
0.25
µs
tHD.DAT
Data In Hold Time
0
0
µs
tSU.DAT
Data In Setup Time
100
100
ns
Inputs Rise Time
tR
(1)
(1)
Max
5.0-volt
Min
Max
Units
0.3
0.3
µs
300
100
ns
tF
Inputs Fall Time
tSU.STO
Stop Setup Time
0.6
.25
µs
tDH
Data Out Hold Time
50
50
ns
tWR
Write Cycle Time
Endurance(1)
5.0V, 25C, Byte Mode
Note:
5
5
1 Million
ms
Write
Cycles
1. This parameter is ensured by characterization only.
5
5126H–SEEPR–8/07
3. Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device.
Data on the SDA pin may change only during SCL low time periods (see Figure 5-2 on page 8).
Data changes during SCL high periods will indicate a start or stop condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which
must precede any other command (see Figure 5-3 on page 8).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 5-3 on page 8).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each
word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24C02B features a low-power standby mode which is enabled: (a)
upon power-up and (b) after the receipt of the STOP bit and the completion of any internal
operations.
2-Wire Software Reset: After an interruption in protocol, power loss or system reset, any 2-wire
part can be reset by following these steps: (a) Create a start bit condition, (b) clock 9 cycles, (c)
create another start bit followed by stop bit condition as shown below. The device is ready for
next communication after above steps have been completed.
Figure 3-1.
Software reset
Dummy Clock Cycles
Start bit
SCL
1
2
3
Start bit
8
Stop b
9
SDA
6
AT24C02B
5126H–SEEPR–8/07
AT24C02B
4. Bus Timing
SCL: Serial Clock, SDA: Serial Data I/O®
Figure 4-1.
tHIGH
tF
tR
tLOW
SCL
tSU.STA
tLOW
tHD.STA
tHD.DAT
tSU.DAT
tSU.STO
SDA IN
tAA
tDH
tBUF
SDA OUT
5. Write Cycle Timing
Figure 5-1.
SCL: Serial Clock, SDA: Serial Data I/O
SCL
SDA
8th BIT
ACK
WORDn
(1)
twr
STOP
CONDITION
Note:
START
CONDITION
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
7
5126H–SEEPR–8/07
Figure 5-2.
Data Validity
SDA
SCL
DATA STABLE
DATA STABLE
DATA
CHANGE
Figure 5-3.
Start and Stop Definition
SDA
SCL
START
Figure 5-4.
STOP
Output Acknowledge
1
SCL
8
9
DATA IN
DATA OUT
START
8
ACKNOWLEDGE
AT24C02B
5126H–SEEPR–8/07
AT24C02B
6. Device Addressing
The 2K EEPROM device requires an 8-bit device address word following a start condition to
enable the chip for a read or write operation (refer to Figure 8-1).
The device address word consists of a mandatory one, zero sequence for the first four most significant bits as shown. This is common to all the EEPROM devices.
The next 3 bits are the A2, A1 and A0 device address bits for the 2K EEPROM. These 3 bits
must compare to their corresponding hard-wired input pins.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not
made, the chip will return to a standby state.
7. Write Operations
BYTE WRITE: A write operation requires an 8-bit data word address following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a zero and the addressing device, such as a microcontroller,
must terminate the write sequence with a stop condition. At this time the EEPROM enters an
internally timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this
write cycle and the EEPROM will not respond until the write is complete (see Figure 8-2 on page
11).
PAGE WRITE: The 2K EEPROM is capable of an 8-byte page write.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to seven data words. The
EEPROM will respond with a zero after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 8-3 on page 11).
The data word address lower three bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than eight data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond with
a zero allowing the read or write sequence to continue.
9
5126H–SEEPR–8/07
8. Read Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll over”
during read is from the last byte of the last memory page to the first byte of the first page. The
address “roll over” during write is from the last byte of the current page to the first byte of the
same page.
Once the device address with the read/write select bit set to one is clocked in and acknowledged
by the EEPROM, the current address data word is serially clocked out. The microcontroller does
not respond with an input zero but does generate a following stop condition (see Figure 8-4 on
page 11).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition. The
microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a zero but does generate a following stop condition (see Figure 8-5 on page 12).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory address
limit is reached, the data word address will “roll over” and the sequential read will continue. The
sequential read operation is terminated when the microcontroller does not respond with a zero
but does generate a following stop condition (see Figure 8-6 on page 12).
Figure 8-1.
Device Address
MSB
10
LSB
AT24C02B
5126H–SEEPR–8/07
AT24C02B
Figure 8-2.
Byte Write
Figure 8-3.
Page Write
Figure 8-4.
Current Address Read
11
5126H–SEEPR–8/07
Figure 8-5.
Random Read
Figure 8-6.
Sequential Read
12
AT24C02B
5126H–SEEPR–8/07
AT24C02B
AT24C02B Ordering Information
Ordering Code
Voltage
Package
AT24C02B-PU (Bulk form only)
1.8
8P3
AT24C02BN-SH-B(1) (NiPdAu Lead Finish)
1.8
8S1
AT24C02BN-SH-T(2) (NiPdAu Lead Finish)
1.8
8S1
1.8
8A2
(1)
AT24C02B-TH-B
(NiPdAu Lead Finish)
AT24C02B-TH-T(2) (NiPdAu Lead Finish)
1.8
8A2
AT24C02BY6-YH-T(2) (NiPdAu Lead Finish)
1.8
8Y6
AT24C02B-TSU-T(2)
1.8
5TS1
AT24C02BU3-UU-T
1.8
8U3-1
AT24C02B-W-11(3)
1.8
Die Sale
(2)
Notes:
Operation Range
Lead-free/Halogen-free/
Industrial Temperature
(–40C to 85C)
Industrial Temperature
(–40C to 85C)
1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP, Ultra Thin Mini-MAP, SOT23, and dBGA2 = 5K per reel.
3. Available in tape and reel and wafer form; order as SL788 for inkless wafer form. Please contact Serial Interface Marketing.
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y6
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm)
5TS1
5-lead, 2.90 mm x 1.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT23)
8U3-1
8-ball, die Ball Grid Array Package (dBGA2)
Options
–1.8
Low-voltage (1.8V to 5.5V)
13
5126H–SEEPR–8/07
9. Part Marking Scheme
8-PDIP
Seal Year
TOP MARK
| Seal Week
|
|
|
|---|---|---|---|---|---|---|---|
A
T
M
L
U
Y
W
W
|---|---|---|---|---|---|---|---|
0
2
B
1
|---|---|---|---|---|---|---|---|
*
Lot Number
|---|---|---|---|---|---|---|---|
|
Pin 1 Indicator (Dot)
U = Material Set
Y = Seal Year
WW = Seal Week
02B = Device
1 = Voltage Indicator
*Lot Number to Use ALL Characters in Marking
BOTTOM MARK
No Bottom Mark
14
AT24C02B
5126H–SEEPR–8/07
AT24C02B
8-SOIC
Seal Year
TOP MARK
| Seal Week
|
|
|
|---|---|---|---|---|---|---|---|
A
T
M
L
H
Y
W
W
|---|---|---|---|---|---|---|---|
0
2
B
1
|---|---|---|---|---|---|---|---|
*
Lot Number
|---|---|---|---|---|---|---|---|
|
Pin 1 Indicator (Dot)
H = Material Set
Y = Seal Year
WW = Seal Week
02B = Device
1 = Voltage Indicator
*Lot Number to Use ALL Characters in Marking
BOTTOM MARK
No Bottom Mark
15
5126H–SEEPR–8/07
8-TSSOP
TOP MARK
Pin 1 Indicator (Dot)
|
|---|---|---|---|
* H Y WW
|---|---|---|---|---|
0 2 B 1
|---|---|---|---|---|
H = Material Set
Y = Seal Year
WW = Seal Week
02B = Device
V = Voltage Indicator
BOTTOM MARK
|---|---|---|---|---|---|---|
X
X
|---|---|---|---|---|---|---|
A
A
A
A
A
A
A
|---|---|---|---|---|---|---|
<- Pin 1 Indicator
Lot Number
XX = Country of Origin
AAAAAA = Lot Number
16
AT24C02B
5126H–SEEPR–8/07
AT24C02B
SOT23
TOP MARK
Line 1 ----------->
|---|---|---|---|---|
2
B
1
W
U
|---|---|---|---|---|
*
|
2B = Device
1 = Voltage Indicator
W = Write Protect Feature
U = Material Set
Pin 1 Indicator (Dot)
BOTTOM MARK
|---|---|---|---|
Y
M
T
C
|---|---|---|---|
Y = One Digit Year Code
M = Seal Month
TC = Trace Code
ULTRA THIN MINI MAP
TOP MARK
|---|---|---|
0
2
B
|---|---|---|
H
1
|---|---|---|
Y
T
C
|---|---|---|
*
|
02B = Device
H = Material Set
1 = Voltage Indicator
Y = Year of Assembly
TC = Trace Code
Pin 1 Indicator (Dot)
17
5126H–SEEPR–8/07
dBGA2
TOP MARK
LINE 1------->
LINE 2------->
02BU
YMTC
|<--
Pin 1 This Corner
02B = Device
U = Material Set
Y = One Digit Year Code
M = Seal Month
TC = Trace Code
18
AT24C02B
5126H–SEEPR–8/07
AT24C02B
10. Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
D1
A2 A
b2
b3
b
4 PLCS
Side View
L
MIN
NOM
MAX
NOTE
A
–
–
0.210
2
A2
0.115
0.130
0.195
b
0.014
0.018
0.022
b2
0.045
0.060
0.070
6
b3
0.030
0.039
0.045
6
SYMBOL
c
0.008
0.010
0.014
D
0.355
0.365
0.400
3
D1
0.005
–
–
3
E
0.300
0.310
0.325
4
E1
0.240
0.250
0.280
3
e
0.100 BSC
eA
L
Notes:
5
0.300 BSC
0.115
0.130
4
0.150
2
1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
DRAWING NO.
REV.
8P3
B
19
5126H–SEEPR–8/07
8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
A1
D
Side View
SYMBOL
MIN
NOM
MAX
A
1.35
–
1.75
A1
0.10
–
0.25
b
0.31
–
0.51
C
0.17
–
0.25
D
4.80
–
5.00
E1
3.81
–
3.99
E
5.79
–
6.20
e
NOTE
1.27 BSC
L
0.40
–
1.27
∅
0˚
–
8˚
Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
R
20
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
8S1
REV.
B
AT24C02B
5126H–SEEPR–8/07
AT24C02B
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A
b
D
MIN
NOM
MAX
NOTE
2.90
3.00
3.10
2, 5
4.50
3, 5
E
E1
e
D
A2
6.40 BSC
4.30
A
–
–
1.20
A2
0.80
1.00
1.05
b
0.19
–
0.30
e
Side View
4.40
L
4
0.65 BSC
0.45
L1
0.60
0.75
1.00 REF
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and ad acent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
DRAWING NO.
8A2
REV.
B
21
5126H–SEEPR–8/07
8Y6 - Mini Map
D2
A
b
(8X)
E
E2
Pin 1
Index
Area
Pin 1 ID
L (8X)
D
A2
e (6X)
A1
1.50 REF.
COMMON DIMENSIONS
(Unit of Measure = mm)
A3
SYMBOL
MIN
2.00 BSC
E
3.00 BSC
MAX
D2
1.40
1.50
1.60
E2
-
-
1.40
A
-
-
0.60
A1
0.0
0.02
0.05
A2
-
-
0.55
A3
L
b
NOTE
0.20 REF
0.20
e
Notes:
NOM
D
0.30
0.40
0.50 BSC
0.20
0.25
0.30
2
1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
3. Soldering the large thermal pad is optional, but not recommended. No electrical connection is accomplished to the
device through this pad, so if soldered it should be tied to ground
10/16/07
R
22
2325 Orchard Parkway
San Jose, CA 95131
DRAWING NO.
TITLE
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map,
8Y6
Dual No Lead Package (DFN) ,(MLP 2x3)
REV.
D
AT24C02B
5126H–SEEPR–8/07
AT24C02B
5TS1 – SOT23
e1
C
4
5
E1
C
L
E
L1
1
3
2
End View
Top View
b
A2
Seating
Plane
e
A
A1
D
COMMON DIMENSIONS
(Unit of Measure = mm)
Side View
NOTES: 1. This drawing is for general information only. Refer to JEDEC Drawing
MO-193, Variation AB, for additional information.
2. Dimension D does not include mold flash, protrusions, or gate burrs.
Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per end.
Dimension E1 does not include interlead flash or protrusion. Interlead
flash or protrusion shall not exceed 0.15 mm per side.
3. The package top may be smaller than the package bottom. Dimensions
D and E1 are determined at the outermost extremes of the plastic body
exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
4. These dimensions apply to the flat section of the lead between 0.08 mm
and 0.15 mm from the lead tip.
5. Dimension "b" does not include Dambar protrusion. Allowable Dambar
protrusion shall be 0.08 mm total in excess of the "b" dimension at
maximum material condition. The Dambar cannot be located on the lower
radius of the foot. Minimum space between protrusion and an adjacent lead
shall not be less than 0.07 mm.
SYMBOL
MIN
NOM
MAX
A
–
–
1.10
A1
0.00
–
0.10
A2
0.70
0.90
1.00
c
0.08
–
0.20
NOTE
4
D
2.90 BSC
2, 3
E
2.80 BSC
2, 3
E1
1.60 BSC
2, 3
L1
0.60 REF
e
0.95 BSC
e1
b
1.90 BSC
0.30
–
0.50
4, 5
6/25/03
R
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE
5TS1, 5-lead, 1.60 mm Body, Plastic Thin Shrink
Small Outline Package (SHRINK SOT)
DRAWING NO.
PO5TS1
REV.
A
23
5126H–SEEPR–8/07
8U3-1 – dBGA2
E
D
1.
b
A1
PIN 1 BALL PAD CORNER
A2
Top View
A
Side View
PIN 1 BALL PAD CORNER
1
2
3
4
8
7
6
5
(d1)
d
e
COMMON DIMENSIONS
(Unit of Measure = mm)
(e1)
Bottom View
8 SOLDER BALLS
1. Dimension “b” is measured at the maximum solder ball diameter.
This drawing is for general information only.
SYMBOL
MIN
NOM
MAX
A
0.71
0.81
0.91
A1
0.10
0.15
0.20
A2
0.40
0.45
0.50
b
0.20
0.25
0.30
D
1.50 BSC
E
2.00 BSC
e
0.50 BSC
e1
0.25 REF
d
1.00 BSC
d1
0.25 REF
NOTE
6/24/03
R
24
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
DRAWING NO.
REV.
PO8U3-1
A
AT24C02B
5126H–SEEPR–8/07
AT24C02B
11. Revision History
Doc. Rev.
Date
Comments
5126H
8/2007
Updated to new template
Updated common graphics
Added Part Makring Scheme
5126G
4/2007
Removed reference to Waffle Pack on page 1 and Page 13
Added lines to Ordering Code table
Removed NC row in the table
Added note on Pg 1
Corrected format on table 5
Removed Memory Reset section
Added 2-Wire software reset section and figure
Corrected Figures 7-11
5126F
2/2007
Corrected dBGA2 package code on Pg 13
Removed ‘Preliminary’
5126E
2/2007
Added Ultra-Thin on Pg 1
Modified Ordering Information table
5126D
7/2006
Implemented Revision History
Added Preliminary status; Added ‘Available in Automotive’ to
Features
25
5126H–SEEPR–8/07
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5126H–SEEPR–8/07