Features • Low-voltage and Standard-voltage Operation – 1.8 (VCC = 1.8V to 3.6V) Internally Organized 2048 x 8 (16K) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (3.6V, 2.7V, 2.5V), 400 kHz (1.8V) Compatibility Write Protect Pin for Hardware Data Protection 16-byte Page (16K) Write Modes Partial Page Writes Allowed Self-timed Write Cycle (5 ms max) High-reliability – Endurance: 1 Million Write Cycles – Data Retention: 100 Years • 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 5-lead SOT23, 8-lead TSSOP and 8-ball dBGA2 Packages • Lead-free/Halogen-free • Die Sales: Wafer Form, Waffle Pack and Bumped Wafers • • • • • • • • • • Two-wire Serial EEPROM 16K (2048 x 8) AT24C16B Description The AT24C16B provides 16384 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 2048 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The AT24C16B is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 5-lead SOT23, 8-lead TSSOP, and 8-ball dBGA2 packages and is accessed via a Two-wire serial interface. In addition, the AT24C16B is available in 1.8V (1.8V to 3.6V) version. Preliminary Table 1. Pin Configuration Pin Name Function A0 - A2 No Connect SDA Serial Data SCL Serial Clock Input WP Write Protect NC No Connect GND Ground VCC Power Supply 8-lead Ultra Thin Mini-MAP (MLP 2x3) VCC WP SCL SDA 8 7 6 5 1 2 3 4 A0 A1 A2 GND 8-ball dBGA2 VCC WP SCL SDA Bottom View 1 2 3 4 8 7 6 5 1 GND 2 SDA 3 2 6 5 8-lead SOIC VCC WP SCL SDA 5-lead SOT23 SCL 1 7 Bottom View 8-lead TSSOP A0 A1 A2 GND A0 A1 3 A2 4 GND 8 5 WP 4 VCC A0 A1 A2 GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA 8-lead PDIP A0 A1 A2 GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA 5175A–SEEPR–09/06 1 Absolute Maximum Ratings Operating Temperature..................................–55°C to +125°C Storage Temperature .....................................–65°C to +150°C Voltage on Any Pin with Respect to Ground .................................... –1.0V to +5.0V Maximum Operating Voltage ............................................ 4.3V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Output Current........................................................ 5.0 mA Figure 1. Block Diagram 2 AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-drain driven and may be wire-ORed with any number of other open-drain or opencollector devices. DEVICE/PAGE ADDRESSES (A2, A1, A0): The AT24C16B does not use the device address pins, which limits the number of devices on a single bus to one. The A0, A1, A2 are no connects and can be connected to ground. WRITE PROTECT (WP): The AT24C16B has a write protect pin that provides hardware data protection. The write protect pin allows normal read/write operations when connected to ground (GND). When the write protect pin is connected to V CC , the write protection feature is enabled and operates as shown in Table 2. Table 2. Write Protect Part of the Array Protected WP Pin Status Memory Organization 24C16B At VCC Full (16K) Array At GND Normal Read/Write Operations AT24C16B, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes each, the 16K requires an 11-bit data word address for random word addressing. 3 5175A–SEEPR–09/06 Table 3. Pin Capacitance(1) Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V Symbol Test Condition CI/O CIN Note: Max Units Conditions Input/Output Capacitance (SDA) 8 pF VI/O = 0V Input Capacitance (SCL) 6 pF VIN = 0V 1. This parameter is characterized and is not 100% tested. Table 4. DC Characteristics Applicable over recommended operating range from: TAI = −40°C to +85°C, VCC = +1.8V to +3.6V (unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Units VCC1 Supply Voltage 3.6 V ICC1 Supply Current VCC = 3.6V READ at 400 kHz 1.0 2.0 mA ICC2 Supply Current VCC = 3.6V WRITE at 400 kHz 2.0 3.0 mA ISB1 Standby Current (1.8V option) VCC = 1.8V 1.0 µA ILI Input Leakage Current VIN = VCC or VSS 0.10 3.0 µA ILO Output Leakage Current VOUT = VCC or VSS 0.05 3.0 µA VIL Input Low Level(1) −0.6 VCC x 0.3 V VCC x 0.7 VCC + 0.5 V 1.8 VCC = 3.6V VIN = VCC or VSS (1) 3.0 VIH Input High Level VOL2 Output Low Level VCC = 3.0V IOL = 2.1 mA 0.4 V VOL1 Output Low Level VCC = 1.8V IOL = 0.15 mA 0.2 V Notes: 4 1. VIL min and VIH max are reference only and are not tested. AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary Table 5. AC Characteristics (Industrial Temperature) Applicable over recommended operating range from TAI = −40°C to +85°C, VCC = +1.8V to +3.6V, CL = 100 pF (unless otherwise noted). Test conditions are listed in Note 2. 1.8-volt Min 2.5-volt Symbol Parameter fSCL Clock Frequency, SCL tLOW Clock Pulse Width Low 1.3 0.4 0.4 µs tHIGH Clock Pulse Width High 0.6 0.4 0.4 µs tAA Clock Low to Data Out Valid 0.05 tBUF Time the bus must be free before a new transmission can start(1) 1.3 0.5 0.5 µs tHD.STA Start Hold Time 0.6 0.25 0.25 µs tSU.STA Start Set-up Time 0.6 0.25 0.25 µs tHD.DAT Data In Hold Time 0 0 0 µs tSU.DAT Data In Set-up Time 100 100 100 ns Inputs Rise Time tR Max Min 400 (1) (1) 0.9 Max 3.6-volt Min 1000 0.05 0.55 0.05 Max Units 1000 kHz 0.55 µs 0.3 0.3 0.3 µs 300 100 100 ns tF Inputs Fall Time tSU.STO Stop Set-up Time 0.6 0.25 0.25 µs tDH Data Out Hold Time 50 50 50 ns tWR Write Cycle Time Endurance(1) 25°C, Page Mode, 3.3V Notes: 5 5 1,000,000 5 ms Write Cycles 1. This parameter is characterized and is not 100% tested. 2. AC measurement conditions: RL (connects to VCC): 1.3 kΩ (2.5V, 3.6V), 10 kΩ (1.8V) Input pulse voltages: 0.3 VCC to 0.7 VCC Input rise and fall times: ≤ 50 ns Input and output timing reference voltages: 0.5 VCC 5 5175A–SEEPR–09/06 Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin may change only during SCL low time periods (see Figure 4 on page 7). Data changes during SCL high periods will indicate a start or stop condition as defined below. START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (see Figure 5 on page 8). STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 5 on page 8). ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each word. This happens during the ninth clock cycle. STANDBY MODE: The AT24C16B features a low-power standby mode which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the completion of any internal operations. SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any 2-wire part can be protocol reset by following these steps: 1. Clock up to 9 cycles. 2. Look for SDA high in each cycle while SCL is high. 3. Create a start condition. 6 AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary Bus Timing Figure 2. SCL: Serial Clock, SDA: Serial Data I/O® Write Cycle Timing Figure 3. SCL: Serial Clock, SDA: Serial Data I/O SCL SDA 8th BIT ACK WORDn twr STOP CONDITION Note: (1) START CONDITION 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle. Figure 4. Data Validity 7 5175A–SEEPR–09/06 Figure 5. Start and Stop Definition Figure 6. Output Acknowledge 8 AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary Device Addressing The 16K EEPROM device requires an 8-bit device address word following a start condition to enable the chip for a read or write operation (refer to Figure 7). The device address word consists of a mandatory one, zero sequence for the first four most significant bits as shown. This is common to all the EEPROM devices. The next 3 bits used for memory page addressing and are the most significant bits of the data word address which follows. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPROM will output a zero. If a compare is not made, the chip will return to a standby state. Write Operations BYTE WRITE: A write operation requires an 8-bit data word address following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a zero and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on page 11). PAGE WRITE: The 16K EEPROM is capable of an 16-byte page write. A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to fifteen data words. The EEPROM will respond with a zero after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 9 on page 11). The data word address lower three bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than sixteen data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten. ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a zero allowing the read or write sequence to continue. Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to one. There are three read operations: current address read, random address read and sequential read. CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address “roll over” during read is from the last byte of the last memory page to the first byte of the first page. The address “roll over” during write is from the last byte of the current page to the first byte of the same page. 9 5175A–SEEPR–09/06 Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input zero but does generate a following stop condition (see Figure 10 on page 11). RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a zero but does generate a following stop condition (see Figure 11 on page 12). SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will “roll over” and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond with a zero but does generate a following stop condition (see Figure 12 on page 12). 10 AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary Figure 7. Device Address P2 16 P1 P0 MSB Figure 8. Byte Write Figure 9. Page Write Figure 10. Current Address Read 11 5175A–SEEPR–09/06 Figure 11. Random Read Figure 12. Sequential Read 12 AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary AT24C16B Ordering Information Ordering Codes Voltage Package Operating Range AT24C16B-PU (Bulk Form Only) AT24C16BN-SH-B(1) (NiPdAu Lead Finish) AT24C16BN-SH-T(2) (NiPdAu Lead Finish) AT24C16B-TH-B(1) (NiPdAu Lead Finish) AT24C16B-TH-T(2) (NiPdAu Lead Finish) AT24C16BY6-YH-T(2) (NiPdAu Lead Finish) AT24C16BTSU-T(2) AT24C16BU3-UU-T(2) 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 8P3 8S1 8S1 8A2 8A2 8Y6 5TS1 8U3-1 Lead-Free Halogen-Free Industrial Temperature (-40°C to 85°C) AT24C16B-W-11(3) 1.8 Die Sales Industrial Temperature (-40°C to 85°C) Notes: 1. “-B” denotes bulk. 2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP, Ultra Thin Mini MAP, SOT23, dBGA2 = 5K per reel. 3. Available in waffle pack, tape and reel, and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. Package Type 8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8A2 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) 8Y6 8-lead, 2.0 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm) 5TS1 5-lead, 2.90 mm x 1.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT23) 8U3-1 8-ball, die Ball Grid Away Package (dBGA2) Options –1.8 Low-voltage (1.8V to 3.6V) 13 5175A–SEEPR–09/06 Packaging Information 8P3 – PDIP E 1 E1 N Top View c eA End View COMMON DIMENSIONS (Unit of Measure = inches) D e D1 A2 A b2 L b3 b 4 PLCS Side View SYMBOL NOM MAX NOTE 2 A – – 0.210 A2 0.115 0.130 0.195 b 0.014 0.018 0.022 5 b2 0.045 0.060 0.070 6 b3 0.030 0.039 0.045 6 c 0.008 0.010 0.014 D 0.355 0.365 0.400 3 D1 0.005 – – 3 E 0.300 0.310 0.325 4 E1 0.240 0.250 0.280 3 e 0.100 BSC eA 0.300 BSC L Notes: MIN 0.115 0.130 4 0.150 2 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information. 2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3. 3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch. 4. E and eA measured with the leads constrained to be perpendicular to datum. 5. Pointed or rounded lead tips are preferred to ease insertion. 6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm). 01/09/02 R 14 2325 Orchard Parkway San Jose, CA 95131 TITLE 8P3, 8-lead, 0.300" Wide Body, Plastic Dual In-line Package (PDIP) DRAWING NO. REV. 8P3 B AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary 8S1 – JEDEC SOIC C 1 E E1 L N ∅ Top View End View e B COMMON DIMENSIONS (Unit of Measure = mm) A SYMBOL A1 D Side View MIN NOM MAX A 1.35 – 1.75 A1 0.10 – 0.25 b 0.31 – 0.51 C 0.17 – 0.25 D 4.80 – 5.00 E1 3.81 – 3.99 E 5.79 – 6.20 e NOTE 1.27 BSC L 0.40 – 1.27 ∅ 0˚ – 8˚ Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. 10/7/03 R 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING NO. 8S1 REV. B 15 5175A–SEEPR–09/06 8A2 – TSSOP 3 2 1 Pin 1 indicator this corner E1 E L1 N L Top View End View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL D A b MIN NOM MAX NOTE 2.90 3.00 3.10 2, 5 3, 5 E e A2 D 6.40 BSC E1 4.30 4.40 4.50 A – – 1.20 A2 0.80 1.00 1.05 b 0.19 – 0.30 e Side View L 4 0.65 BSC 0.45 L1 0.60 0.75 1.00 REF Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances, datums, etc. 2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension D and E1 to be determined at Datum Plane H. 5/30/02 R 16 2325 Orchard Parkway San Jose, CA 95131 TITLE 8A2, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) DRAWING NO. 8A2 REV. B AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary 8Y6 - Mini Map D2 A b (8X) E E2 Pin 1 Index Area Pin 1 ID L (8X) D A2 e (6X) A1 1.50 REF. A3 COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN D E MAX 1.40 1.50 1.60 E2 - - 1.40 A - - 0.60 A1 0.0 0.02 0.05 A2 - - 0.55 L 0.20 REF 0.20 e b NOTE 3.00 BSC D2 A3 Notes: NOM 2.00 BSC 0.30 0.40 0.50 BSC 0.20 0.25 0.30 2 1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions, tolerances, datums, etc. 2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area. 8/26/05 R 2325 Orchard Parkway San Jose, CA 95131 DRAWING NO. TITLE 8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map, 8Y6 Dual No Lead Package (DFN), (MLP 2x3) REV. C 17 5175A–SEEPR–09/06 5TS1 – SOT23 e1 C 4 5 E1 C L E L1 1 3 2 End View Top View b A2 Seating Plane e A A1 D COMMON DIMENSIONS (Unit of Measure = mm) Side View NOTES: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-193, Variation AB, for additional information. 2. Dimension D does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per end. Dimension E1 does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.15 mm per side. 3. The package top may be smaller than the package bottom. Dimensions D and E1 are determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but including any mismatch between the top and bottom of the plastic body. 4. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 5. Dimension "b" does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the "b" dimension at maximum material condition. The Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and an adjacent lead shall not be less than 0.07 mm. SYMBOL MIN NOM MAX A – – 1.10 A1 0.00 – 0.10 A2 0.70 0.90 1.00 c 0.08 – 0.20 NOTE 4 D 2.90 BSC 2, 3 E 2.80 BSC 2, 3 E1 1.60 BSC 2, 3 L1 0.60 REF e 0.95 BSC e1 1.90 BSC b 0.30 – 0.50 4, 5 6/25/03 R 18 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 5TS1, 5-lead, 1.60 mm Body, Plastic Thin Shrink Small Outline Package (SHRINK SOT) DRAWING NO. PO5TS1 REV. A AT24C16B Preliminary 5175A–SEEPR–09/06 AT24C16B Preliminary 8U3-1 – dBGA2 E D 1. b A1 PIN 1 BALL PAD CORNER A2 Top View A Side View PIN 1 BALL PAD CORNER 1 2 3 4 8 7 6 5 (d1) d e COMMON DIMENSIONS (Unit of Measure = mm) (e1) Bottom View 8 SOLDER BALLS 1. Dimension “b” is measured at the maximum solder ball diameter. This drawing is for general information only. SYMBOL MIN NOM MAX A 0.71 0.81 0.91 A1 0.10 0.15 0.20 A2 0.40 0.45 0.50 b 0.20 0.25 0.30 D 1.50 BSC E 2.00 BSC e 0.50 BSC e1 0.25 REF d 1.00 BSC d1 0.25 REF NOTE 6/24/03 R 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch, Small Die Ball Grid Array Package (dBGA2) DRAWING NO. REV. PO8U3-1 A 19 5175A–SEEPR–09/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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