Features • Operating Voltage: 3.3V • Access Time: – 15 ns (AT60142F) • Very Low Power Consumption • • • • • • • • • – Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns – Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125°C TTL-Compatible Inputs and Outputs Asynchronous Designed on 0.25 µm Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2@125°C Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 500 Mils Wide FP36 Package ESD Better than 4000V Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208 Description The AT60142F is a very low power CMOS static RAM organized as 524 288 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Rad Hard 512K x 8 Very Low Power CMOS SRAM AT60142F Utilizing an array of six transistors (6T) memory cells, the AT60142F combines an extremely low standby supply current (Typical value = 1 mA) with a fast access time at 15 ns or better over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The AT60142F is processed according to the methods of the latest revision of the MIL PRF 38535 or ESCC 9000. It is produced on a radiation hardened 0.25 µm CMOS process. 4408H–AERO–05/10 1 AT60142F Block Diagram Pin Configuration A0 A1 A2 A4 CS I/O1 I/O2 Vcc GND I/O3 I/O4 WE A5 A6 A7 A8 A9 36 - pin -Flatpack - 500 Mils A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE I/O8 I/O7 GND Vcc I/O6 I/O5 A14 A13 A12 A11 A10 N/C 2 4408H–AERO–05/10 Pin Description Table 1. Pin Names Name Description A0 - A18 Address Inputs I/O1 - I/O8 Data Input/Output CS Chip Select WE Write Enable OE Output Enable Vcc Power Supply GND Ground Table 2. Truth Table(1) CS WE OE Inputs/Outputs Mode H X X Z Deselect/ Power-down L H L Data Out Read L L X Data In Write L H H Z Output Disable Note: 3 1. L=low, H=high, X= L or H, Z=high impedance. AT60142F 4408H–AERO–05/10 AT60142F Electrical Characteristics Absolute Maximum Ratings* Supply Voltage to GND Potential: ....................... -0.5V + 4.6V *NOTE: Voltage range on any input: ...................... GND -0.5V to 4.6V Voltage range on any ouput: ..................... GND -0.5V to 4.6V Storage Temperature: ................................... -65⋅C to + 150⋅C Output Current from Output Pins: ................................ 20 mA Electrostatic Discharge Voltage: ............................... > 4000V (MIL STD 883D Method 3015.3) Stresses beyond those listed under "Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure between recommended DC operating and absolute maximum rating conditions for extended periods may affect device reliability. Military Operating Range Operating Voltage Operating Temperature 3.3 + 0.3V -55°C to + 125°C Military Recommended DC Operating Conditions Parameter Description Vcc Supply voltage GND Ground Min Typ Max Unit 3 3.3 3.6 V 0.0 0.0 0.0 V VIL Input low voltage GND - 0.3 0.0 0.8 V VIH Input high voltage 2.2 – VCC + 0.3 V Description Min Typ Max Unit Capacitance Parameter Note: Cin(1) Input capacitance – – 12 pF Cout(1) Output capacitance – – 12 pF 1. Guaranteed but not tested. 4 4408H–AERO–05/10 DC Parameters Parameter Minimum Typical Maximum Unit Input leakage current -1 – 1 μA IOZ(1) Output leakage current -1 – 1 μA VOL(2) Output low voltage – – 0.4 V VOH(3) Output high voltage 2.4 – – V IIX (1) Description 1. GND < VIN < VCC, GND < VOUT < VCC Output Disabled. 2. VCC min. IOL = 8 mA 3. VCC min. IOH = -4 mA. Consumption TAVAV/TAVAW Test Condition AT60142F-15 Unit Value Standby Supply Current – 2 mA max Standby Supply Current – 1.8 mA max Read Dynamic Operating Current 15 ns 25 ns 50 ns 1 µs 180 150 75 10 mA max ICCOP(4) Write Dynamic Operating Current 15 ns 25 ns 50 ns 1 µs 150 130 120 100 mA max Symbol Description ICCSB (1) ICCSB1 (2) ICCOP(3) 1. 2. 3. 4. 5 CS >VIH CS > VCC - 0.3V F = 1/TAVAV, Iout = 0 mA, WE = OE = VIH, VIN = GND/VCC, VCC max. F = 1/TAVAW, Iout = 0 mA, WE = VIL, OE = VIH , VIN = GND/VCC, VCC max. AT60142F 4408H–AERO–05/10 AT60142F Data Retention Mode Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules insure data retention: 1. During data retention chip select CS must be held high within VCC to VCC -0.2V. 2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, minimizing power dissipation. 3. During power-up and power-down transitions CS and OE must be kept between VCC + 0.3V and 70% of VCC. 4. The RAM can begin operation > tR ns after VCC reaches the minimum operation voltages (3V). Figure 1. Data Retention Timing Data Retention Characteristics Parameter Description Min Typ TA = 25°C Max Unit VCCDR VCC for data retention 2.0 – – V tCDR Chip deselect to data retention time 0.0 – – ns tR Operation recovery time tAVAV – – ns ICCDR (2) Data retention current – 0.700 1.3 mA 1. 2. (1) TAVAV = Read cycle time. CS = VCC, VIN = GND/VCC. 6 4408H–AERO–05/10 AC Characteristics Temperature Range:................................................ -55 +125°C Supply Voltage:........................................................ 3.3 +0.3V Input Pulse Levels: .................................................. GND to 3.0V Input Rise and Fall Times:....................................... 3ns (10 - 90%) Input and Output Timing Reference Levels: ............ 1.5V Output Loading IOL/IOH:............................................ See Figure 2 Figure 2. AC Test Loads Waveforms 7 AT60142F 4408H–AERO–05/10 AT60142F Write Cycle Symbol Parameter AT60142F-15 Unit Value TAVAW Write cycle time 15 ns min TAVWL Address set-up time 0 ns min TAVWH Address valid to end of write 8 ns min TDVWH Data set-up time 7 ns min TELWH CS low to write end 12 ns min TWLQZ Write low to high Z(1) 6 ns max TWLWH Write pulse width 8 ns min TWHAX Address hold from end of write 0 ns min TWHDX Data hold time 0 ns min TWHQX Write high to low Z(1) 3 ns min Notes: 1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.) Figure 3. Write Cycle 1. WE Controlled, OE High During Write E Figure 4. Write Cycle 2. WE Controlled, OE Low E 8 4408H–AERO–05/10 Figure 5. Write Cycle 3. CS Controlled(1) E Note: 9 The internal write time of the memory is defined by the overlap of CS Low and W LOW. Both signals must be activated to initiate a write and either signal can terminate a write by going in active mode. The data input setup and hold timing should be referenced to the active edge of the signal that terminates the write. Data out is high impedance if OE= VIH. AT60142F 4408H–AERO–05/10 AT60142F Read Cycle Symbol Parameter AT60142F-15 Unit Value TAVAV Read cycle time 15 ns min TAVQV Address access time 15 ns max TAVQX Address valid to low Z 5 ns min TELQV Chip-select access time 15 ns max TELQX CS low to low Z(1) 5 ns min TEHQZ CS high to high Z(1) 6 ns max TGLQV Output Enable access time 6 ns max TGLQX OE low to low Z(1) 2 ns min TGHQZ OE high to high Z (1) 5 ns max Note: 1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.) Figure 6. Read Cycle nb 1: Address Controlled (CS = OE = VIL, WE = VIH) Figure 7. Read Cycle nb 2: Chip Select Controlled (WE = VIH) 10 4408H–AERO–05/10 Ordering Information Part Number Temperature Range Speed Package Flow 25°C 15 ns/3.3V FP36.5 grounded lid Engineering Samples AT60142F-DS15M-E 5962-0520802QYC -55° to +125°C 15 ns/3.3V FP36.5 grounded lid QML Q 5962-0520802VYC -55° to +125°C 15 ns/3.3V FP36.5 grounded lid QML V -55° to +125°C 15 ns/3.3V FP36.5 grounded lid QML V RHA -55° to +125°C 15 ns/3.3V FP36.5 grounded lid ESCC 5962R0520802VYC AT60142F-DS15-SCC (3) (1) 25°C 15 ns/3.3V Die Engineering Samples -55° to +125°C 15 ns/3.3V Die QML V 5962-0520802QXC -55⋅ to +125⋅C 15 ns/3.3V FP36.5 QML Q 5962-0520802VXC -55⋅ to +125⋅C 15 ns/3.3V FP36.5 QML V 5962R0520802VXC -55⋅ to +125⋅C 15 ns/3.3V FP36.5 QML V RHA 930105202 -55⋅ to +125⋅C 15 ns/3.3V FP36.5 ESCC AT60142F-DD15M-E AT60142F-DD15MSV(1) (2) Not recommended for new designs Note: 1. Contact Atmel for availability. 2. Will be replaced by SMD part number when available. 3. Will be replaced by ESCC part number when available. 11 AT60142F 4408H–AERO–05/10 AT60142F Package Drawings 36-lead Flat Pack (500 Mils) Notes: 1. package DC : lid is NOT connected to GROUND 2. package DS : lid is connected to GROUND 12 4408H–AERO–05/10 Document Revision History Changes from Rev. E to Rev. F 1. Split datasheet into two separate documents: removed AT60142FT from this document. Please refer to document 7726 on the Atmel web site. Changes from Rev. F to Rev. G 1. Suppression of version AT60142G 2. Update of “Absolute Maximum Ratings” section Changes from Rev. G to Rev. H 1. In “Features” section page 1 : – “MeV/mg/cm2” unit replaced by “MeV/mg/cm2@125°C” 2. In “AC Characteristics” section page 7 : – “See figure 1” replaced by “See figure 2” 3. In “Ordering Information” section page 11 : – 13 All parts supplied in FP36.5 without gounded lid are not recommended for new designs. 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