+/
4)
1
5
BGU7073
Analog controlled high linearity low noise variable gain
amplifier
Rev. 3 — 9 November 2015
Product data sheet
1. Product profile
1.1 General description
The BGU7073 is a fully integrated analog-controlled variable gain amplifier module. Its
low noise and high linearity performance makes it ideal for sensitive receivers in cellular
base station applications. The BGU7073 is designed for the 1850 MHz to 2010 MHz
frequency range. It has a gain control range of more than 35 dB. At maximum gain, the
noise figure is 0.9 dB. The gain is analog-controlled having maximum gain at 0 V and
minimum gain at 3.3 V. The LNA has two gain settings, extending the dynamic range. The
BGU7073 is internally matched to 50 , meaning no external matching is required,
enabling ease of use. It is housed in a 16 pins 8 mm 8 mm 1.3 mm leadless
HLQFN16R package SOT1301.
1.2 Features and benefits
Input and output internally matched to 50
Low noise figure of 0.9 dB
High input IP3 of 1 dBm
High Pi(1dB) of 11.6 dBm
LNA with 2 gain settings, giving high dynamic range
Gain control range of 0 dB to 35 dB
Single 5 V supply
Single analog gain control of 0 V to 3.3 V
Unconditionally stable up to 12.75 GHz
Moisture sensitivity level 3
ESD protection at all pins
1.3 Applications
Cellular base stations, remote radio heads
3G, LTE infrastructure
Low noise applications with variable gain and high linearity requirements
Active antenna
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
1.4 Quick reference data
Table 1.
Quick reference data
GS = LOW (see Table 9); VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF
parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min
Typ
Max Unit
210
240
295 mA
f = 1950 MHz
ICC(tot)
total supply current
Vctrl(Gp) = 0 V
NF
noise figure
Vctrl(Gp) = 0 V (maximum power gain)
-
0.9
-
dB
Gp = 35 dB
-
1.1
1.2
dB
0
1.0
-
dBm
-
dBm
IP3I
input third-order intercept point
Pi(1dB)
input power at 1 dB gain compression Gp = 35 dB
Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz
13.5 11.6
f = 1880 MHz
ICC(tot)
total supply current
Vctrl(Gp) = 0 V
210
240
NF
noise figure
Vctrl(Gp) = 0 V (maximum power gain)
-
0.8
-
dB
Gp = 35 dB
-
1.0
1.2
dB
Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz
0
1.1
-
dBm
-
dBm
IP3I
input third-order intercept point
Pi(1dB)
input power at 1 dB gain compression Gp = 35 dB
13.5 11.4
295 mA
2. Pinning information
*1'
9&&
9&&
*1'
WHUPLQDO
LQGH[DUHD
2.1 Pinning
*6
LF
LF
9FWUO*S
*1'
LF
QF
*1'
5)B287
QF
LF
5)B,1
DDD
7UDQVSDUHQWWRSYLHZ
Fig 1.
BGU7073
Product data sheet
Pin configuration
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
2.2 Pin description
Table 2.
Pin description
Symbol
Pin
Description
RF_IN
1
RF input
GND
2, 11, 13, 16
ground
GS
3
gain switch control
i.c.
4, 5, 10
internally connected. Can either be left open or grounded
n.c.
6, 7
not connected. Internally left open
i.c.
8
internally connected to ground
Vctrl(Gp)
9
power gain control voltage
RF_OUT
12
RF output
VCC2
14
supply voltage 2
VCC1
15
supply voltage 1
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BGU7073
HLQFN16R
plastic thermal enhanced low profile quad flat package; no leads;
16 terminals; body 8 8 1.3 mm
SOT1301-1
BGU7073
Product data sheet
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
*6
LF
9&&
*1'
5)B287
*1'
LF
9FWUO*S
9*$
/1$
LF
QF
*1'
QF
LF
5)B,1
9&&
WHUPLQDO
LQGH[DUHD
*1'
4. Functional diagram
DDD
Fig 2.
Functional diagram
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max Unit
VCC
supply voltage
0
Vctrl(Gp)
power gain control voltage
1
+3.6 V
VI(GS)
input voltage on pin GS
1
+3.6 V
Pi(RF)CW
continuous waveform RF input power
Tj
junction temperature
Tstg
storage temperature
BGU7073
Product data sheet
6
V
Vctrl(Gp) = 0 V
high gain mode
[1]
-
10
dBm
low gain mode
[2]
-
10
dBm
-
150
C
40 +150 C
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
Table 4.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VESD
electrostatic discharge voltage
Human Body Model (HBM) According to
ANSI/ESDA/JEDEC standard JS-001
-
Charged Device Model (CDM) According to
JEDEC standard JESD22-C101
-
[1]
high gain mode: GS = LOW (see Table 9).
[2]
low gain mode: GS = HIGH (see Table 9).
Min
Max Unit
2
kV
750 V
6. Recommended operating conditions
Table 5.
Recommended operating conditions
Symbol
Parameter
VCC1
VCC2
Vctrl(Gp)
Conditions
Min
Typ
Max
Unit
supply voltage 1
4.75
5
5.25
V
supply voltage 2
4.75
5
5.25
V
power gain control voltage
0
-
3.3
V
VI(GS)
input voltage on pin GS
0
-
3.3
V
Z0
characteristic impedance
-
50
-
Tcase
case temperature
40
-
+85
C
7. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
[1]
thermal resistance from junction to case
Rth(j-case)
[1]
Conditions
Typ
Unit
55
K/W
The case temperature is measured at the ground solder pad.
8. Characteristics
Table 7.
Characteristics high gain mode
GS = LOW (see Table 9); VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF
parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min
Typ
Max Unit
210
240
195 mA
-
8.5
f = 1950 MHz
ICC(tot)
total supply current
Vctrl(Gp) = 0 V (maximum power gain)
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
-
37.4
-
dB
Gp(flat)
power gain flatness
1920 MHz f 2010 MHz; 18 dB Gp 35 dB
-
0.6
-
dB
NF
noise figure
Vctrl(Gp) = 0 V (maximum power gain)
-
0.9
-
dB
Gp = 35 dB
-
1.1
1.2
dB
Gp = 18 dB
-
5.8
-
dB
BGU7073
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 November 2015
-
dB
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
Table 7.
Characteristics high gain mode …continued
GS = LOW (see Table 9); VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF
parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
IP3I
2-tone; tone-spacing = 1.0 MHz
Pi(1dB)
RLin
input third-order intercept point
input power at 1 dB
gain compression
input return loss
Min
Typ
Max Unit
Gp = 35 dB
0
1.0
-
dBm
Gp = 30 dB
-
4.1
-
dBm
Gp = 29 dB
-
4.5
-
dBm
Gp = 18 dB
-
5.5
-
dBm
13.5 11.6
Gp = 35 dB
-
dBm
Gp = 30 dB
-
7.8
-
dBm
Gp = 29 dB
-
7.4
-
dBm
Gp = 18 dB
-
6.3
-
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
33.7
-
dB
Gp = 35 dB
-
27.8
-
dB
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
19.5
-
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
210
240
f = 1880 MHz
ICC(tot)
total supply current
Vctrl(Gp) = 0 V (maximum power gain)
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
-
7.9
-
dB
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
-
37.0
-
dB
Gp(flat)
power gain flatness
1850 MHz f 1910 MHz; 18 dB Gp 35 dB
-
0.3
-
dB
NF
noise figure
Vctrl(Gp) = 0 V (maximum power gain)
-
0.8
-
dB
Gp = 35 dB
-
1.0
Gp = 18 dB
-
5.9
-
dB
Gp = 35 dB
0
1.1
-
dBm
Gp = 30 dB
-
4.0
-
dBm
Gp = 29 dB
-
4.3
-
dBm
-
5.0
IP3I
input third-order intercept point
RLin
input power at 1 dB
gain compression
input return loss
1.35 dB
2-tone; tone-spacing = 1.0 MHz
Gp = 18 dB
Pi(1dB)
295 mA
Gp = 35 dB
-
dBm
13.5 11.6
-
dBm
Gp = 30 dB
-
7.8
-
dBm
Gp = 29 dB
-
7.4
-
dBm
Gp = 18 dB
-
6.4
-
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
33.7
-
dB
Gp = 35 dB
-
28.5
-
dB
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
19.4
-
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
BGU7073
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
6 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
Table 8.
Characteristics low gain mode
GS = HIGH (see Table 9); VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF
parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min
Typ
Max Unit
210
240
295 mA
-
7.9
f = 1950 MHz
ICC(tot)
total supply current
Vctrl(Gp) = 0 V (maximum power gain)
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
-
dB
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
-
20.5
-
dB
Gp(flat)
power gain flatness
1920 MHz f 2010 MHz; 3 dB Gp 17 dB
-
0.1
-
dB
NF
noise figure
Gp = 17 dB
-
9.7
-
dB
Gp = 3 dB
-
19.7
-
dB
Gp = 17 dB
-
18.4
-
dBm
Gp = 12 dB
-
20.0
-
dBm
Gp = 11 dB
-
20.8
-
dBm
Gp = 3 dB
IP3I
Pi(1dB)
RLin
input third-order intercept point
2-tone; tone-spacing = 1.0 MHz
-
18.1
-
dBm
input power at 1 dB gain compression Gp = 17 dB
-
5.7
-
dBm
Gp = 12 dB
-
9.2
-
dBm
Gp = 11 dB
-
9.0
-
dBm
input return loss
Gp = 3 dB
-
9.5
-
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
34.0
-
dB
Gp = 17 dB
-
31.6
-
dB
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
14.8
-
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
210
240
-
8.4
f = 1880 MHz
ICC(tot)
total supply current
Vctrl(Gp) = 0 V (maximum power gain)
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
295 mA
-
dB
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
-
20.4
-
dB
Gp(flat)
power gain flatness
1850 MHz f 1910 MHz; 3 dB Gp 17 dB
-
0.1
-
dB
NF
noise figure
Gp = 17 dB
-
9.9
-
dB
Gp = 3 dB
-
19.8
-
dB
Gp = 17 dB
-
18.7
-
dBm
Gp = 12 dB
-
19.7
-
dBm
Gp = 11 dB
-
20.2
-
dBm
Gp = 3 dB
IP3I
Pi(1dB)
input third-order intercept point
2-tone; tone-spacing = 1.0 MHz
-
18.6
-
dBm
input power at 1 dB gain compression Gp = 17 dB
-
5.8
-
dBm
Gp = 12 dB
-
9.4
-
dBm
Gp = 11 dB
-
9.3
-
dBm
Gp = 3 dB
-
9.4
-
dBm
BGU7073
Product data sheet
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
Table 8.
Characteristics low gain mode …continued
GS = HIGH (see Table 9); VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF
parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min
Typ
-
26.9
Max Unit
RLin
input return loss
Vctrl(Gp) = 0 V (maximum power gain)
Gp = 17 dB
-
27.3
-
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
14.3
-
dB
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
-
dB
Table 9.
Gain switch truth table
VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C
Gain mode
GS
logic
VI(GS)
high gain mode
LOW
0 V to 0.5 V
low gain mode
HIGH
2 V to 3.3 V
8.1 Graphs
DDD
*S
G%
DDD
*S
G%
I*+]
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Power gain as a function of frequency in high
gain mode; typical values
BGU7073
Product data sheet
I*+]
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
Fig 3.
Fig 4.
Power gain as a function of frequency in low
gain mode; typical values
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
8 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
DDD
5/LQ
G%
DDD
5/LQ
G%
I*+]
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Input return loss as a function of frequency in
high gain mode; typical values
DDD
VSDUV
G%
I*+]
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
Fig 5.
Fig 6.
Input return loss as a function of frequency in
low gain mode; typical values
DDD
VSDUV
G%
6
6
6
6
6
I*+]
S-parameters as a function of frequency in
high gain mode; typical values
BGU7073
Product data sheet
I*+]
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; Vctrl(Gp) = 0 V;
Tamb = 25 C.
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; Vctrl(Gp) = 0 V;
Tamb = 25 C.
Fig 7.
6
Fig 8.
S-parameters as a function of frequency in low
gain mode; typical values
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
DDD
.
DDD
.
I*+]
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Rollett stability factor as a function of
frequency in high gain mode; typical values
DDD
,3,
G%P
I*+]
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
Fig 9.
Fig 10. Rollett stability factor as a function of
frequency in low gain mode; typical values
DDD
,3,
G%P
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1995 MHz.
(1) Tamb = 40 C
*SG%
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 11. Input third-order intercept point as a function
of power gain in high gain mode; typical
values
Product data sheet
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1995 MHz.
(2) Tamb = +25 C
BGU7073
Fig 12. Input third-order intercept point as a function
of power gain in low gain mode; typical values
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
10 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
DDD
,3,
G%P
DDD
,3,
G%P
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1950 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
DDD
,3,
G%P
*SG%
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1950 MHz.
(1) Tamb = 40 C
Fig 13. Input third-order intercept point as a function
of power gain in high gain mode; typical
values
Fig 14. Input third-order intercept point as a function
of power gain in low gain mode; typical values
DDD
,3,
G%P
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1880 MHz.
(1) Tamb = 40 C
*SG%
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1880 MHz.
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 15. Input third-order intercept point as a function
of power gain in high gain mode; typical
values
Product data sheet
(1) Tamb = 40 C
(2) Tamb = +25 C
BGU7073
Fig 16. Input third-order intercept point as a function
of power gain in low gain mode; typical values
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
11 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
DDD
3LG%
G%P
DDD
3LG%
G%P
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1955 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
DDD
3LG%
G%P
DDD
3LG%
G%P
Fig 18. Input power at 1 dB gain compression as a
function of power gain in low gain mode;
typical values
*SG%
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1955 MHz.
(1) Tamb = 40 C
Fig 17. Input power at 1 dB gain compression as a
function of power gain in high gain mode;
typical values
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1950 MHz.
(1) Tamb = 40 C
*SG%
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1950 MHz.
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 19. Input power at 1 dB gain compression as a
function of power gain in high gain mode;
typical values
Product data sheet
(1) Tamb = 40 C
(2) Tamb = +25 C
BGU7073
Fig 20. Input power at 1 dB gain compression as a
function of power gain in low gain mode;
typical values
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
12 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
DDD
3LG%
G%P
DDD
3LG%
G%P
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1880 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 22. Input power at 1 dB gain compression as a
function of power gain in low gain mode;
typical values
DDD
1)
G%
*SG%
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1880 MHz.
(1) Tamb = 40 C
Fig 21. Input power at 1 dB gain compression as a
function of power gain in high gain mode;
typical values
DDD
1)
G%
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1995 MHz.
(1) Tamb = 40 C
*SG%
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1995 MHz.
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 23. Noise figure as a function of power gain in
high gain mode; typical values
Product data sheet
(1) Tamb = 40 C
(2) Tamb = +25 C
BGU7073
Fig 24. Noise figure as a function of power gain in low
gain mode; typical values
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
13 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
DDD
1)
G%
DDD
1)
G%
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1950 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
1)
G%
*SG%
Fig 26. Noise figure as a function of power gain in low
gain mode; typical values
DDD
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1950 MHz.
(1) Tamb = 40 C
Fig 25. Noise figure as a function of power gain in
high gain mode; typical values
DDD
1)
G%
*SG%
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1880 MHz.
(1) Tamb = 40 C
*SG%
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 27. Noise figure as a function of power gain in
high gain mode; typical values
Product data sheet
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1880 MHz.
(2) Tamb = +25 C
BGU7073
Fig 28. Noise figure as a function of power gain in low
gain mode; typical values
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14 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
DDD
*S
G%
DDD
*S
G%
9FWUO*S9
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1995 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
*S
G%
Fig 30. Power gain as a function of power gain control
voltage in low gain mode; typical values
DDD
9FWUO*S9
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1995 MHz.
(1) Tamb = 40 C
Fig 29. Power gain as a function of power gain control
voltage in high gain mode; typical values
DDD
*S
G%
9FWUO*S9
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1950 MHz.
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 31. Power gain as a function of power gain control
voltage in high gain mode; typical values
Product data sheet
9FWUO*S9
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1950 MHz.
(2) Tamb = +25 C
BGU7073
Fig 32. Power gain as a function of power gain control
voltage in low gain mode; typical values
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© NXP Semiconductors N.V. 2015. All rights reserved.
15 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
DDD
*S
G%
DDD
*S
G%
9FWUO*S9
GS = LOW; VCC1 = 5 V; VCC2 = 5 V; f = 1880 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7073
Product data sheet
9FWUO*S9
GS = HIGH; VCC1 = 5 V; VCC2 = 5 V; f = 1880 MHz.
(1) Tamb = 40 C
Fig 33. Power gain as a function of power gain control
voltage in high gain mode; typical values
Fig 34. Power gain as a function of power gain control
voltage in low gain mode; typical values
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
16 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
9. Application information
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See Table 10 for a list of components.
Fig 35. Schematic layout for application circuit
Table 10. List of components
For application circuit, see Figure 35.
Component
Description
Value
Remarks
C1, C2
capacitor
1 nF
SMD 0402; Murata GRM1555 series
C3, C4, C9, C10
capacitor
100 pF
SMD 0402; Murata GRM1555 series
C11, C12
capacitor
100 nF
SMD 0402; Murata GRM1555 series
L1, L2
inductor
10 nH
SMD 0402; Murata LQG15 series
BGU7073
Product data sheet
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Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
17 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
10. Package outline
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Fig 36. Package outline SOT1301-1 (HLQFN16R)
BGU7073
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
11. Abbreviations
Table 11.
Abbreviations
Acronym
Description
3G
Third Generation
ESD
ElectroStatic Discharge
LNA
Low Noise Amplifier
LTE
Long-Term Evolution
12. Revision history
Table 12.
Revision history
Document ID Release date
Data sheet status
Change notice
Supersedes
BGU7073 v.3
Product data sheet
-
BGU7073 v.2
20151109
•
•
•
•
•
•
•
•
•
Modifications:
Section 1.1 on page 1: The value of the noise figure has been updated.
Section 1.2 on page 1: Several values have been updated.
Table 1 on page 2: Several values have been updated.
Table 6 on page 5: The value for Rth(j-case) has been updated.
Figure 2 on page 4: The functional diagram has been updated.
Table 7 on page 5: Several values have been updated.
Table 8 on page 7: Several values have been updated.
Section 8.1 on page 8: The graphs have been updated.
Section 9 on page 17: The application information has been updated.
BGU7073 v.2
20150319
Product data sheet
-
BGU7073 v.1
BGU7073 v.1
20140128
Product data sheet
-
-
BGU7073
Product data sheet
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Rev. 3 — 9 November 2015
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BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGU7073
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
20 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGU7073
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 November 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
21 of 22
BGU7073
NXP Semiconductors
Analog controlled high linearity low noise variable gain amplifier
15. Contents
1
1.1
1.2
1.3
1.4
2
2.1
2.2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 5
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application information. . . . . . . . . . . . . . . . . . 17
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Contact information. . . . . . . . . . . . . . . . . . . . . 21
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 November 2015
Document identifier: BGU7073