UM2018 User manual STEVAL-IPM10B motor control power board based on the SLLIMM™ 2nd series of IGBT IPMs Introduction The STEVAL-IPM10B is a compact motor drive power board based on SLLIMM™ (small low-loss intelligent molded module) 2nd series (STGIB10CH60TS-L). It provides an affordable and easy-to-use solution for driving high power motors for a wide range of applications such as power white goods, air conditioning, compressors, power fans, high-end power tools and 3-phase inverters for motor drives in general. The IPM itself consists of short-circuit rugged IGBTs and a wide range of features like undervoltage lockout, smart shutdown, embedded temperature sensor and NTC, and overcurrent protection. The main characteristics of this evaluation board are small size, minimal BOM and high efficiency. It consists of an interface circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor, hardware short-circuit protection, fault event and temperature monitoring. In order to increase the flexibility, it is designed to work in single- or three-shunt configuration and with double current sensing options such as using three dedicated onboard op-amps, or op-amps embedded in the MCU. The Hall/Encoder part completes the circuit. Thanks to these advanced characteristics, the system has been specifically designed to achieve fast and accurate current feedback conditioning, satisfying the typical requirements for field-oriented control (FOC). The STEVAL-IPM10B is compatible with ST's STM32-based control board, enabling designers to build a complete platform for motor control. February 2016 DocID028946 Rev 1 1/37 www.st.com Key features UM2018 Figure 1: SLLIMM 2nd series motor control internal demo board (top view) 2/37 DocID028946 Rev 1 UM2018 Contents Contents 1 2 Key features ..................................................................................... 6 Schematic diagrams........................................................................ 7 3 Main characteristics ...................................................................... 12 4 Filters and key parameters ........................................................... 13 4.1 Input signals .................................................................................... 13 4.2 Bootstrap capacitor ......................................................................... 13 4.3 Overcurrent protection .................................................................... 14 4.3.1 SD Pin ............................................................................................ 14 4.3.2 Fault management............................................................................ 14 4.3.3 Shunt resistor selection .................................................................... 17 4.3.4 RC filter ............................................................................................. 18 4.3.5 Single- or three-shunt selection ........................................................ 18 5 Current sensing amplifying network ............................................ 19 6 Temperature monitoring ............................................................... 21 6.1 Thermal sensor (VTSO) .................................................................. 21 6.2 NTC Thermistor............................................................................... 21 7 Firmware configuration for STM32 PMSM FOC SDK .................. 23 8 Connectors, jumpers and test pins .............................................. 24 9 10 Bill of materials .............................................................................. 27 PCB design guide .......................................................................... 31 10.1 Layout of reference board ............................................................... 31 11 Recommendations and suggestions ........................................... 33 12 General safety instructions .......................................................... 34 13 14 References ..................................................................................... 35 Revision history ............................................................................ 36 DocID028946 Rev 1 3/37 List of tables UM2018 List of tables Table 1: Fault timing ................................................................................................................................. 14 Table 2: Shunt selection ........................................................................................................................... 17 Table 3: Op-amp sensing configuration .................................................................................................... 19 Table 4: Amplifying networks .................................................................................................................... 20 Table 5: ST motor control workbench GUI parameters ............................................................................ 23 Table 6: Connectors.................................................................................................................................. 24 Table 7: Jumpers ...................................................................................................................................... 25 Table 8: Test pins ..................................................................................................................................... 26 Table 9: Bill of materials............................................................................................................................ 27 Table 10: Document revision history ........................................................................................................ 36 4/37 DocID028946 Rev 1 UM2018 List of figures List of figures Figure 1: SLLIMM 2nd series motor control internal demo board (top view).............................................. 2 Figure 2: SLLIMM 2nd series motor control internal demo board: (bottom view) ...................................... 6 Figure 3: STEVAL-IPM10B circuit schematic (1 of 5) ................................................................................. 7 Figure 4: STEVAL-IPM10B circuit schematic (2 of 5) ................................................................................. 8 Figure 5: STEVAL-IPM10B circuit schematic (3 of 5)................................................................................. 9 Figure 6: STEVAL-IPM10B circuit schematic (4 of 5) ............................................................................... 10 Figure 7: STEVAL-IPM10B circuit schematic (5 of 5) ............................................................................... 11 Figure 8: STEVAL-IPM10B architecture ................................................................................................... 12 Figure 9: CBOOT graph selection ................................................................................................................ 13 Figure 10: SD failure due to overcurrent................................................................................................... 15 Figure 11: SD failure due to undervoltage (UVLO below 50 µs) .............................................................. 16 Figure 12: SD failure due to undervoltage (UVLO above 50 µs) .............................................................. 16 Figure 13: One-shunt configuration .......................................................................................................... 18 Figure 14: Three-shunt configuration ........................................................................................................ 18 Figure 15: Thermal sensor voltage vs temperature .................................................................................. 21 Figure 16: NTC voltage vs temperature.................................................................................................... 22 Figure 17: Silk screen and etch - top side ................................................................................................ 31 Figure 18: Silk screen and etch - bottom side .......................................................................................... 32 DocID028946 Rev 1 5/37 Key features 1 UM2018 Key features Input voltage: 125 - 400 VDC Nominal power: up to 1200 W Input auxiliary voltage: up to 20 V DC Motor control connector (32 pins) interfacing with ST MCU boards Single- or three-shunt resistors for current sensing (with sensing network) Two options for current sensing: dedicated op-amps or through MCU Overcurrent hardware protection IPM temperature monitoring and protection Hall sensors (3.3 / 5 V)/encoder inputs (3.3 / 5 V) IGBT intelligent power module: SLLIMM™ 2nd series IPM (STGIB10CH60TS-L - DBC package) Universal conception for further evaluation with bread board and testing pins Very compact size Figure 2: SLLIMM 2nd series motor control internal demo board: (bottom view) 6/37 DocID028946 Rev 1 UM2018 Schematic diagrams Following figures show the whole schematic of the SLLIMM™ 2nd series card for STGIB10CH60TS-L IPM products. This card consists of an interface circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor, short-circuit protection, fault output circuit, temperature monitoring, single-/three-shunt resistors and filters for input signals. It also includes bypass capacitors for VCC and bootstrap capacitors. The capacitors are located very close to the drive IC, which is very helpful in preventing malfunction due to noise. Two current sensing options are provided: three dedicated on-board op-amps or using opamps embedded on the MCU. Selection is performed through three jumpers. The Hall/Encoder part (powered at 5 V or 3.3 V) completes the circuit. Figure 3: STEVAL-IPM10B circuit schematic (1 of 5) + C4 TSV994 47u/35V GSPG2110151505SG 1.65V 14 U1D 3.3V 11 0 RC8 0 RC7 0 RC3 DocID028946 Rev 1 0 RC10 0 RC9 X 0 RC6 RC5 0 M 0 0 RC1 N STEVAL-IPMnmx decoder J1 RC2 C2 10n R3 120R R4 7k5 1000u/400V + C1 2 1 INPUT-dc 0 RC4 R6 1k0 47u/35V R2 470K Input R1 470K +Bus 3.3V D1 BAT48JFILM Bus_voltage + C3 R5 1k0 13 - 12 + 4 DC_bus_voltage 2 Schematic diagrams 7/37 8/37 3 3 1 DocID028946 Rev 1 2 SW 4 Cu rren t_C Cu rren t_A M_pha se_ B PW M_V ref M_pha se_ A +5V NTC_b ypa ss_relay EM_S TOP PW M-A-H PW M-A-L PW M-B-H PW M-B-L PW M-C-H PW M-C-L 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 J2 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Con trol Conne ctor 3 2 1 Motor Outpu t J3 M_pha se_ C 3.3V Bu s_voltag e TSO 2 SW 3 phase_A phase_B phase_C NTC 3 Cu rren t_C_a mp E3 Cu rren t_B 1 2 SW 2 2 SW 1 1 Cu rren t_B_a mp E2 3 Cu rren t_A_a mp E1 Schematic diagrams Figure 4: STEVAL-IPM10B circuit schematic (2 of 5) UM2018 1 GSPG2110151515SG R32 R30 DocID028946 Rev 1 1k0 C30 100p 1k0 R43 2k1 6 5 2 3 - + - + 11 R42 R40 R38 2k1 R33 2k1 R29 2k1 TSV994 7 U1B 3.3V TSV994 1 U1A 4.7u 50V 1k R31 1k R41 100n C23 3.3V E2 C31 330p TP26 C25 330p TP24 1k0 C27 100p 1k0 C26 10n Current_C_amp R37 R35 1.65V Current_A_amp R39 2k1 9 10 R34 2k1 - + 4 E3 C28 10n 1k0 C24 100p 1k0 C22 10n 4 1.65V E1 1.65V + C21 TSV994 8 U1C 3.3V 1k R36 C29 330p TP25 UM2018 Figure 5: STEVAL-IPM10B circuit schematic (3 of 5) Schematic diagrams Current_B_amp 11 4 11 9/37 10/37 DocID028946 Rev 1 PW M-B-H PW M-B-L Phase B - inpu t R12 5k6 EM_STOP 1k0 1k0 R20 1k0 R19 1k0 C14 10p C20 330p R28 10k 3.3V C15 10p C11 10p C18 10p TP11 C10 10p C17 10p R15 1k0 R14 1k0 R9 R8 TP23 TP7 SD C19 1n 3.3V BAT48JF ILM R23 C16 1nF 1k0 17 16 15 14 13 12 11 9 10 8 7 6 5 4 3 2 1 TP12 TP20 TP4 2.2u C7 4.7u 50V + C12 TP3 2.2u D6 TSO TP17 TP14 TP5 TP8 TP15 C13 100 n TP6 TP2 C6 2.2u C5 TSO GND b CIN SD VCC L LINw LINv LINu GND a VCC H HINw HINv HINu P T2 T1 IPM modul e BAT48JF ILM D5 BAT48JF ILM D4 BAT48JF ILM D3 R24 1k0 R21 1k0 R18 1k0 NW NV NU W V U STGIB10CH60TS-L VBOO Tw VBOO Tv VBOO Tu NC U2 18 19 20 21 22 23 24 25 26 TP1 TP19 TP18 TP16 TP13 TP10 TP9 NTC C8 100 n 3.3V R25 0.06 3_SHUNT TP21 R22 3k3 R17 3k9 R16 3k3 R13 3k9 R11 3k3 R7 3k9 SW7 12k R10 R26 0.06 1_SHUNT SW5 1_SHUNT SW 6 R27 0.06 E1 E2 E3 SW 8 pha se_C pha se_B pha se_A +Bus C9 0,1 uF - 400 V 3_SHUNT TP22 PWM-C-H PWM-C-L Phase C - inpu t J4 2 1 15V D2 LED Red PW M-A-H PW M-A-L Phase A - inpu t Schematic diagrams Figure 6: STEVAL-IPM10B circuit schematic (4 of 5) UM2018 GSPG03 11151050SG DocID028946 Rev 1 3 +5V 3.3V 1 2 3 4 5 1 2 3 4 5 1 2 SW9 2 SW16 Encoder/Hall H1/A+ H2/B+ H3/Z+ + 3.3/5V GND J5 C33 100n C32 100n 3 +5V 3.3V C34 100n R49 SW12 R48 SW11 R47 SW10 2k4 2k4 2k4 C35 10p R44 4k7 Hall/Encoder C36 10p R45 4k7 C37 10p R46 4k7 R50 4k7 SW13 R51 4k7 SW14 R52 4k7 SW15 M_pha se_C M_pha se_B M_pha se_A UM2018 Figure 7: STEVAL-IPM10B circuit schematic (5 of 5) Schematic diagrams GSPG2110151550SG 1 11/37 Main characteristics 3 UM2018 Main characteristics The board is designed to be compatible with DC supply from 125 VDC up to 400 VDC voltage. A bulk capacitor according to the power level of the application must be mounted. The footprint is already provided on the board. The SLLIMM integrates six IGBT switches with freewheeling diodes together with high voltage gate drivers. Thanks to this integrated module, the system is specifically designed to achieve power inversion in a reliable and compact design. Such integration reduces the required PCB area and the simplicity of the design increases reliability. In order to increase the flexibility, it can operate in single- or three-shunt configuration by modifying solder bridge jumper settings (see Section 4.3.5: "Single- or three-shunt selection"). Figure 8: STEVAL-IPM10B architecture 12/37 DocID028946 Rev 1 UM2018 Filters and key parameters 4 Filters and key parameters 4.1 Input signals The input signals (LINx and HINx), able to drive the internal IGBTs, are active high. A 100 kΩ (typ.) pull-down resistor is built-in for each input signal. In order to prevent input signal oscillation, an RC filter was added on each input and placed as close as possible to the IPM. The filter is designed using a time constant of 10 ns (1 kΩ and 10 pF). 4.2 Bootstrap capacitor In the 3-phase inverter, the emitters of the low side IGBTs are connected to the negative DC bus (VDC-) as common reference ground, which allows all low side gate drivers to share the same power supply, while the emitter of high side IGBTs is alternately connected to the positive (VDC+) and negative (VDC-) DC bus during running conditions. A bootstrap method is a simple and cheap solution to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode. The SLLIMM 2 nd series family includes a patented integrated structure that replaces the external diode. It is realized with a high voltage DMOS functioning as diode with series resistor. An internal charge pump provides the DMOS driving voltage. The value of the C BOOT capacitor should be calculated according to the application condition. Figure 9: "CBOOT graph selection" shows the behavior of CBOOT (calculated) versus switching frequency (fsw), with different values of ∆VCBOOT for a continuous sinusoidal modulation and a duty cycle δ = 50%. The boot capacitor must be two or three times larger than the CBOOT calculated in the graph. For this design, a value of 2.2 µF was selected. Figure 9: CBOOT graph selection DocID028946 Rev 1 13/37 Filters and key parameters 4.3 UM2018 Overcurrent protection The SLLIMM 2nd series integrates a comparator for fault sensing purposes. The comparator has an internal voltage reference VREF (510 mV typ.) connected to the inverting input, while the non-inverting input available on the CIN pin can be connected to an external shunt resistor to implement the overcurrent protection function. When the comparator triggers, the device enters the shutdown state. The comparator output is connected to the SD pin in order to send the fault message to the MCU. 4.3.1 SD Pin The SD is an input/output pin (open drain type if used as output). Taking into account the voltage reference on SD (3.3 V), a pull up resistor of 10 kΩ (R23) is used to guarantee the right bias and consequently to keep the current on the open drain DMOS (I od) lower than 3 mA. The filter on SD (R28 and C20) has to be sized to obtain the desired re-starting time after a fault event and placed as close as possible to the SD pin. A shutdown event can be managed by the MCU, in this case the SD functions as the input pin. Conversely, the SD functions as an output pin when an overcurrent or undervoltage condition is detected. 4.3.2 Fault management The SLLIMM 2nd series integrates a specific kind of fault management, useful when SD is functioning as output, able to identify the type of fault event. As previously described, as soon as a fault occurs, the open-drain (DMOS) is activated and LVGx outputs are forced low. Two types of fault can be signaled: Overcurrent (OC) sensed by the internal comparator (CIN); Undervoltage (UVLO) on supply voltage (VCC). Each fault enables the SD open drain for a different time (see the table below). The duration of a shutdown event therefore tells us the type of failure that has occurred. Table 1: Fault timing Symbol Parameter OC Over current event UVLO 14/37 Undervoltage lockout Event time SD open-drain enable time result ≤ 20 µs 20 µs > 20 µs OC time ≤ 50 µs 50 µs DocID028946 Rev 1 UM2018 Filters and key parameters Symbol Parameter Event time SD open-drain enable time result event > 50 µs until the VCC_LS exceed the VCC_LS UV turn ON threshold UVLO time Figure 10: "SD failure due to overcurrent" shows a shutdown as the result of an overcurrent event. During the overcurrent, the voltage on the comparator (CIN) exceeds the threshold (0.51 V typ.) and the shutdown is able to stop the application. In this case, the SD event time is about 20 µs (for OC event less than 20 µs). Figure 10: SD failure due to overcurrent Figure 11: "SD failure due to undervoltage (UVLO below 50 µs)" shows the shutdown event as the result of an undervoltage condition on the VCC supply. If VCC drops below the undervoltage threshold, the shutdown can stop the application. If the voltage on V CC rises above the VCC on threshold in less than 50 µs, the SD event time is about 50 µs. DocID028946 Rev 1 15/37 Filters and key parameters UM2018 Figure 11: SD failure due to undervoltage (UVLO below 50 µs) Figure 12: "SD failure due to undervoltage (UVLO above 50 µs)" shows the shutdown event as the result of an undervoltage condition on the VCC supply. In this case, the drop on VCC is greater than 50 µs. The SD event time is the same as the duration of drop. Figure 12: SD failure due to undervoltage (UVLO above 50 µs) 16/37 DocID028946 Rev 1 UM2018 4.3.3 Filters and key parameters Shunt resistor selection The value of the shunt resistor is calculated by the following equation: Equation 1 𝑅𝑆𝐻 = 𝑉𝑟𝑒𝑓 𝐼𝑂𝐶 Where Vref is the internal comparator (CIN) (0.51 V typ.) and IOC is the overcurrent threshold detection level. The maximum OC protection level should be set to less than the pulsed collector current in the datasheet. In this design, the overcurrent threshold level is fixed at 30% above the nominal IPM current. For STGIB10CH60TS-L, IOC is 13.3 A peak, therefore: Equation 2 𝑉𝑟𝑒𝑓+ 𝑉𝐹 0.51 + 0.3 = = 0.06Ω 𝐼𝑂𝐶 13.3 𝑅𝑆𝐻 = Where VF is the voltage drop across diodes D6, D7, D8. For the power rating of the shunt resistor, the following parameters must be considered: Maximum load current of inverter (85% of I nom [Arms]): Iload(max). Shunt resistor value at TC = 25 °C. Power derating ratio of shunt resistor at T SH =100 °C Safety margin. The power rating is calculated by following equation: Equation 3 𝑃𝑆𝐻 = 2 ∙ 𝑅𝑆𝐻 ∙ 𝑚𝑎𝑟𝑔𝑖𝑛 1 𝐼𝑙𝑜𝑎𝑑(max) ∙ 2 𝐷𝑒𝑟𝑎𝑡𝑖𝑛𝑔𝑟𝑎𝑡𝑖𝑜 In case of STGIB10CH60TS-L and RSH = 0.06 Ω: 𝐼𝑛𝑜𝑚 Inom= 10 A ---> 𝐼𝑛𝑜𝑚[𝑟𝑚𝑠] = Power derating ratio of shunt resistor at TSH = 100 °C: 80% (from datasheet manufacturer) Safety margin: 30% √2 ---> 𝐼𝑙𝑜𝑎𝑑(max) = 85%(𝐼𝑛𝑜𝑚[𝑟𝑚𝑠] ) = 6.0𝐴𝑟𝑚𝑠 Equation 4 𝑃𝑆𝐻 = 1 6.02 ∙ 0.06 ∙ 1.3 ∙ = 1.75𝑊 2 0.8 Considering available commercial values, a 2 W shunt resistor was selected. Based on the previous equations and conditions, minimum shunt resistance and power rating is summarized below. Table 2: Shunt selection Inom Device (peak) [A] STGIB10CH60TS-L 10 OCP(peak) [A] Iload(max) [Arms] RSHUNT [Ω] Minimum shunt power rating PSH [W] 13.3 6.0 0.06 1.75 DocID028946 Rev 1 17/37 Filters and key parameters 4.3.4 UM2018 RC filter An RC filter network is required to prevent undesired short circuit operation due to the noise on the shunt resistor. In this design, the RC filter, composed of R23, R18, R21, R24 and C19, has a constant time of about 1.3 µs. Adding the turn-off propagation delay of the gate driver and the IGBT turn-off time (hundreds of nano seconds in total), the total delay time is less than 5 µs of short circuit withstand IGBT time. 4.3.5 Single- or three-shunt selection Single- or three-shunt resistor circuits can be adopted by setting the solder bridges SW5, SW6, SW7 and SW8. The figures below illustrate how to set up the two configurations. Figure 13: One-shunt configuration Figure 14: Three-shunt configuration Please refer to Table 3: "Op-amp sensing configuration" for further details regarding sensing configuration. 18/37 DocID028946 Rev 1 UM2018 5 Current sensing amplifying network Current sensing amplifying network The STEVAL-IPM10B motor control demonstration board can be configured to run in threeshunt or single-shunt configurations for field oriented control (FOC). The current can be sensed thanks to the shunt resistor and amplified by using the on board operational amplifiers or by the MCU (if equipped with op-amp). Once the shunt configuration is chosen by setting solder bridge on SW5, SW6, SW7 and SW8 (as described in Section 4.3.5: "Single- or three-shunt selection"), the user can choose to send the voltage shunt to the MCU amplified or unamplified. Single-shunt configuration requires a single op amp and three-shunt configuration requires three op amps; therefore, in single-shunt configuration, the only voltage which is sent to the MCU to control the sensing is connected to phase V through SW2. SW1, SW2, SW4 can select which signals are sent to micro, as described below: Table 3: Op-amp sensing configuration Symbol Configuration Bridge Sensing Single Shunt 1-2 2-3 open Three Shunt 1-2 2-3 On-board op-amp Single Shunt 1-2 2-3 On board op-amp Three Shunt 1-2 2-3 On-board op-amp Single Shunt 1-2 2-3 open Three Shunt 1-2 2-3 On-board op-amp open SW1 MCU op-amp MCU op-amp SW2 MCU op-amp open SW4 MCU op-amp The operational amplifier TSV994 used on amplifying networks has a 20 MHz gain bandwidth and operates with a single positive supply of 3.3 V. The amplification network must allow bidirectional current sensing, so that an output offset VO = +1.65 V represents zero current. Referencing the STGIB10CH60TS-L (IOCP = 13.3 A; RSHUNT = 0.06 Ω), the maximum measurable phase current, considering that the output swings from +1.65 V to +3.3 V (MCU supply voltage) for positive currents and from +1.65 V to 0 for negative currents is: Equation 5 𝑀𝑎𝑥𝑀𝑒𝑎𝑠𝐶𝑢𝑟𝑟𝑒𝑛𝑡 = 𝑟𝑚 = ∆𝑉 = 13.3𝐴 𝑟𝑚 ∆𝑉 1.65 = = 0.124Ω 𝑀𝑎𝑥𝑀𝑒𝑎𝑠𝐶𝑢𝑟𝑟𝑒𝑛𝑡 13.3 The overall trans-resistance of the two-port network is: DocID028946 Rev 1 19/37 Current sensing amplifying network UM2018 𝑟𝑚 = 𝑅𝑆𝐻𝑈𝑁𝑇 ∙ 𝐴𝑀𝑃 = 0.06 ∙ 𝐴𝑀𝑃 = 0.124Ω 𝐴𝑀𝑃 = 𝑟𝑚 𝑅𝑆𝐻𝑈𝑁𝑇 = 0.124 = 2.1 0.06 Finally choosing Ra=Rb and Rc=Rd, the differential gain of the circuit is: 𝐴𝑀𝑃 = 𝑅𝑐 = 2.1 𝑅𝑎 An amplification gain of 2.1 was chosen. The same amplification is obtained for all the other devices, taking into account the OCP current and the shunt resistance, as described in Table 2: "Shunt selection". The RC filter for output amplification is designed to have a time constant that matches noise parameters in the range of 1.5 µs: 4 ∙ 𝜏 = 4 ∙ 𝑅𝑒 ∙ 𝐶𝑐 = 1.5𝜇𝑠 𝐶𝑐 = 1.5µ𝑠 = 375𝑝𝐹(330𝑝𝐹𝑠𝑒𝑙𝑒𝑐𝑡𝑒𝑑) 4 ∙ 1000 Table 4: Amplifying networks Phase 20/37 Amplifying network RC filter Ra Rb Rc Rd Re Cc Phase U R30 R32 R29 R33 R31 C25 Phase V R35 R37 R34 R39 R36 C29 Phase W R40 R42 R38 R43 R41 C31 DocID028946 Rev 1 UM2018 6 Temperature monitoring Temperature monitoring The SLLIMM 2nd series family integrates a temperature sensor (VTSO) on the low side gate driver and a NTC thermistor placed close to the power stage. The board is designed to use both of them which can be selected by using SW3 in order to monitor internal IPM temperature through the MCU. 6.1 Thermal sensor (VTSO) A voltage proportional to the temperature is available on the TSO pin (17) and easily measurable on the TP20 test pin. The thermal sensor does not need any pull down resistors. To increase the noise immunity, a capacitor filter of 1 nF (C16) is placed on this pin. The following graph shows the typical variation of the voltage as a function of temperature. Figure 15: Thermal sensor voltage vs temperature 6.2 NTC Thermistor The built-in thermistor (85 kΩ at 25 °C) is inside the IPM and connected between T1 and T2 pins (26, 25). A pull up resistor (R10) of 12 kΩ is used in order to guarantee an almost linear voltage variation on the NTC as a function of temperature. This voltage can be easily detected on TP1 test pin. The figure below shows the typical voltage on T2 as function of temperature. DocID028946 Rev 1 21/37 Temperature monitoring UM2018 Figure 16: NTC voltage vs temperature 22/37 DocID028946 Rev 1 UM2018 7 Firmware configuration for STM32 PMSM FOC SDK Firmware configuration for STM32 PMSM FOC SDK The following table summarizes the parameters which customize the latest version of the ST FW motor control library for permanent magnet synchronous motor (PMSM): STM32 PMSM FOC SDK for this STEVAL-IPM10B. Table 5: ST motor control workbench GUI parameters Block Over current protection Bus voltage sensing Rated bus voltage info Current sensing Command stage Parameter Value Comparator threshold Vref + Vf = 0,81 V Overcurrent network offset 0 Overcurrent network gain 0.1 V/A Bus voltage divider 1/125 Min rated voltage 125 V Max rated voltage 400 V Nominal voltage 325 V Current reading typology Single- or three-shunt Shunt resistor value 0.06 Ω Amplifying network gain 2.1 Phase U Driver HS and LS: Active high Phase V Driver HS and LS: Active high Phase W Driver HS and LS: Active high DocID028946 Rev 1 23/37 Connectors, jumpers and test pins 8 UM2018 Connectors, jumpers and test pins Table 6: Connectors Connector Reference Description / pinout Motor control connector J2 1 - emergency stop 3 - PWM-1H 5 - PWM-1L 7 - PWM-2H 9 - PWM-2L 11 - PWM-3H 13 - PWM-3L 15 - current phase A 17 - current phase B 19 - current phase C 21 - NTC bypass relay 23 - dissipative brake PWM 25 - +V power 27- PFC sync. 29 - PWM VREF 31 - measure phase A 33 - measure phase B Motor connector J3 phase A phase B phase C VCC supply (20 VDC max) J4 24/37 positive negative DocID028946 Rev 1 2 - GND 4 - GND 6 - GND 8 - GND 10 - GND 12 - GND 14 - HV bus voltage 16 - GND 18 - GND 20 - GND 22 - GND 24 - GND 26 - heat sink temperature 28 - VDD_m 30 - GND 32 - GND 34 - measure phase C UM2018 Connectors, jumpers and test pins Connector Reference Description / pinout Supply connector (DC – 125V to 400 V) 1. 2. J7 L - phase N - neutral Hall sensors / encoder input connector 1. 2. 3. 4. 5. J9 Hall sensors input 1 / encoder A+ Hall sensors input 2 / encoder B+ Hall sensors input 3 / encoder Z+ 3.3 or 5 Vdc GND Table 7: Jumpers Jumper Description TSO/NTC SW3 TSO: jumper on 1-2 NTC: jumper on 2-3 To choose current U to send to control board: SW1 Jumper on 1-2: from amplification Jumper on 2-3: directly from motor output To choose current V to send to control board SW2 Jumper on 1-2: from amplification Jumper on 2-3: directly from motor output To choose current W to send to control board: SW4 Jumper on 1-2: from amplification Jumper on 2-3: directly from motor output SW13 To modify phase A hall sensor network SW14 To modify phase B hall sensor network SW15 To modify phase C hall sensor network To choose input power for Hall/Encoder SW9, SW16 Jumper on 1-2: 5 V Jumper on 2-3: 3.3 V SW5, SW6 SW7, SW8 To choose one-shunt or three-shunt configuration. (Through solder bridge) DocID028946 Rev 1 25/37 Connectors, jumpers and test pins Jumper UM2018 Description SW5, SW6 close SW7, SW8 open one shunt SW5, SW6 open SW7, SW8 close three shunt Table 8: Test pins 26/37 Test Pin Description TP1 NTC (T2 pin) TP2 VBOOTw TP3 VBOOTv TP4 VBOOTu TP5 HinU (high side U control signal input) TP6 HinV (high side V control signal input) TP7 HinW (high side W control signal input) TP8 VCCH TP9 phase A (U pin) TP10 phase B (V pin) TP11 Ground TP12 LinU (high side U control signal input) TP13 phase C (W pin) TP14 LinV (high side V control signal input) TP15 LinW (high side W control signal input) TP16 Negative DC input for U phase TP17 CIN TP18 Negative DC input for V phase TP19 Negative DC input for W phase TP20 TSO (TSO pin) TP21 Ground TP22 Ground TP23 SD (shutdown pin) TP24 Current_A_amp TP25 Current_B_amp TP26 Current_C_amp DocID028946 Rev 1 UM2018 9 Bill of materials Bill of materials The components used to build the demonstration board are listed below. The majority of the active components used are available from STMicroelectronics. Table 9: Bill of materials Item Qty Reference Value Tol. [%] Voltage current Watt Package Manuf. 1 4 C2,C22,C2 6,C28 10 nF ±10 50 V - Capacitor, SMD 1206 Any 2 9 C10, C11, C14, C15, C17, C18, C35, C36, C37 10 pF ±10 100 V - Capacitor, SMD 1206 Any 3 4 C20, C25, C29, C31 330 pF ±10 50 V - Capacitor, SMD 1206 Any 4 3 C5, C6, C7 2.2 µF ±10 25 V - Capacitor, SMD 1206 Any 5 6 C8, C13, C23, C32, C33, C34 100 nF ±10 50 V - Capacitor, SMD 1206 Any 6 2 C12, C21 4.7 µF ±10 50 V - Elyt. capacitor, 4x4 Any 7 2 C19, C16 1 nF ±10 50 V - Capacitor, SMD 1206 Any 8 1 C9 0.1 µF ±10 630 V - Capacitor, SMD 1812 Any 9 3 C24, C27, C30 100 pF ±10 100 V - Capacitor, SMD 1206 Any 10 2 C3, C4 47 µF ±10 50 V - Elyt. capacitor, 4x4 Any 11 5 D1, D3, D4, D5, D6 Diode BAT48J - - - Schottky Diode, SOD323 ST 12 1 D2 LED Red - - - LED 3 mm, 2 mA, universal Any 13 1 J2 Connector - - - Connector 34-pins Any 14 1 J3 Connector - 400 V - Connector 7 mm - 3 pole Any 15 1 J4 Connector - 50 V - Connector 5 mm - 2 pole Any DocID028946 Rev 1 27/37 Bill of materials Item Qty Reference Value Tol. [%] Voltage current Watt Package Manuf. 16 1 J1 Connector - 300 V - Connector 7 mm - 2 pole Any 17 1 J5 Connector - 63 V - Five pins of pin header Any 18 2 R1, R2 470 kΩ ±1 400 V 1/8 Resistor, SMD 1206 Any 19 1 R4 7.5 kΩ ±1 400 V 1/8 Capacitor, SMD 1206 Any 20 1 R3 120 Ω ±1 400 V 1/8 Resistor, SMD 1206 Any 21 3 R7, R13, R17 3.9 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 22 21 R5, R6, R8, R9, R14, R15, R19, R20, R23, R30, R32, R31, R18, R21, R24, R36, R35, R41, R42, R40, R37 1 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 23 3 R11, R16, R22 3.3 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 24 1 R28 10 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 25 1 R10 12 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 26 6 R29, R33, R34, R38, R39, R43 2.1 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 27 1 R12 5.6 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 3 R25, R26, R27 0.06 Ω - - - Resistor, SMD 2512 Vishay WSL281 6R0600F EH 6 R44, R45, R46, R50, R51, R52 4.7 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 28 29 28/37 UM2018 DocID028946 Rev 1 UM2018 Bill of materials Item Qty Reference Value Tol. [%] Voltage current Watt Package Manuf. 30 3 R47, R48, R49 2.4 kΩ ±1 25 V 1/8 Resistor, SMD 1206 Any 6 SW1, SW2, SW3,S W4, SW9, SW16 Jumper 2.54 - - - Three pins of pin header Any 6 SW10, SW11, SW12, SW13, SW14, SW15 Jumper 2.54 - - - Two pins of pin header Any - - - - Any 31 32 33 12 - 2.54 mm, low profile, connector 34 2 SW7, SW8 Solder Bridge - - - - NA 35 2 SW5, SW6 open - - - - Any 36 26 TP1, TP2, TP3, TP4, TP5, TP6, TP7, TP8, TP9, TP10, TP11, TP12, TP13, TP14, TP15, TP16, TP17, TP18, TP19, TP20, TP21, TP22, TP23, TP24, TP25, TP26 PCB terminal 1 mm - - - Test pin Any 37 1 U1 TSV994 - - - Op amp, SO14 ST 38 1 U2 STGIB10C H60TS-L - - - STGIB10CH 60TS-L ST 39 3 RC2,RC5, RC10 0Ω Any Any Any Resistor, SMD 0805 Any DocID028946 Rev 1 29/37 Bill of materials Item Qty Reference Value 40 7 RC1,RC3, RC4,RC6, RC7,RC8, RC9 Not assembled 9 to close switch for: SW1, SW2, SW3, SW4, SW9, SW10, SW11, SW12, SW16 - 41 30/37 UM2018 Tol. [%] Voltage current Watt Not assembled - - DocID028946 Rev 1 - Package Manuf. Not assembled Any - Any UM2018 10 PCB design guide PCB design guide Optimization of PCB layout for high voltage, high current and high switching frequency applications is a critical point. PCB layout is a complex matter as it includes several aspects, such as length and width of track and circuit areas, but also the proper routing of the traces and the optimized reciprocal arrangement of the various system elements in the PCB area. A good layout can help the application to properly function and achieve expected performance. On the other hand, a PCB without a careful layout can generate EMI issues, provide overvoltage spikes due to parasitic inductance along the PCB traces and produce higher power loss and even malfunction in the control and sensing stages. In general, these conditions were applied during the design of the board: 10.1 PCB traces designed as short as possible and the area of the circuit (power or signal) minimized to avoid the sensitivity of such structures to surrounding noise. Good distance between switching lines with high voltage transitions and the signal line sensitive to electrical noise. The shunt resistors were placed as close as possible to the low side pins of the SLLIMM. To decrease the parasitic inductance, a low inductance type resistor (SMD) was used. RC filters were placed as close as possible to the SLLIMM pins in order to increase their efficiency. Layout of reference board All the components are inserted on the top of the board. Only the IPM module is inserted on the bottom to allow the insertion of a suitable heatsink for the application. Figure 17: Silk screen and etch - top side DocID028946 Rev 1 31/37 PCB design guide UM2018 Figure 18: Silk screen and etch - bottom side 32/37 DocID028946 Rev 1 UM2018 11 Recommendations and suggestions Recommendations and suggestions The BOM list is not provided with a bulk capacitor already inserted in the PCB. However, the necessary space has been included (C1) and therefore it is advisable to use an appropriate bulk capacity to stabilize the bus supply voltage. Similarly, the BOM list does not include the heat sink. It is possible put the heat sink, above the IPM on the bottom of the PCB, with thermal conductive foil and screws. The value of RTH has to be considered for good thermal performance; it depends on certain factors such as current phase, switching frequency, power factor and ambient temperature. DocID028946 Rev 1 33/37 General safety instructions 12 UM2018 General safety instructions Warning: the evaluation board works with high voltage which could be deadly for the users. Furthermore all circuits on the board are not isolated from the line input. Due to the high power density, the components on the board as well as the heat sink can be heated to a very high temperature, which can cause a burning risk when touched directly. The users should be engineers and technicians who are experienced in power electronics technology and make sure that no danger or risk may occur while operating this board. After the operation of the evaluation board, the bulk capacitor C1 (if used) may still store a high energy for several minutes. So it must be first discharged before any direct touching of the board. In order to protect the bulk capacitor C1, it is strongly recommended for the users to use an external brake chopper after C1 (to discharge the high brake current back from the induction motor). 34/37 DocID028946 Rev 1 UM2018 13 References References 1. 2. 3. 4. 5. STGIB10CH60TS-L datasheet TSV994 datasheet STTH15R06 datasheet UM1052 user manual AN 4076 DocID028946 Rev 1 35/37 Revision history 14 UM2018 Revision history Table 10: Document revision history 36/37 Date Version Changes 09-Feb-2016 1 Initial release. DocID028946 Rev 1 UM2018 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID028946 Rev 1 37/37