PIC10F220/222 Rev. B Silicon Data Sheet Errata

PIC10F220/222
PIC10F220/222 Rev. B Silicon/Data Sheet Errata
The PIC10F220/222 silicon Rev. B. parts you have
received conform functionally to the Device Data Sheet
(DS41270E), except for the anomalies described
below.
1. Module: Analog-to-Digital (A/D)
Converter
The A/D Converter does not meet the design target.
The specifications listed below in Table 10-5 of
DS41270E apply to silicon Rev. B.
TABLE 10-5:
A/D CONVERTER CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +125°C
Param
Sym.
No.
Characteristic
Min.
Typ†
Max.
Units
8 bits
bit
Conditions
A01
NR
Resolution
—
—
A03
EIL
Integral Error
—
—
±1.5
LSb
A04
EDL
Differential Error
—
—
-1 ≤ EDL ≤ + 1.5
LSb
A05
EFS
Full-scale Range
2.0*
—
5.5*
V
A06
EOFF
Offset Error
—
—
±1.5
LSb
A07
EGN
Gain Error
—
—
±1.8
LSb
A10
—
Monotonicity
—
guaranteed(1)
—
—
A25
VAIN
Analog Input Voltage
VSS
—
VDD
V
A30
ZAIN
Recommended Impedance
of Analog Voltage Source
—
—
10
kΩ
A31*
ΔIAD
A/D Conversion Current(2)
—
120
150
μA
2.0V
5.0V
A32
VIVRF Internal Voltage Reference
—
200
250
μA
0.500
0.600
0.700
V
VSS ≤ VAIN ≤ VDD
* These parameters are characterized but not tested.
† Data in the “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design
guidance only and are not tested.
Note 1: The A/D conversion result never decreases with an increase in the input voltage.
2: This is the additional current consumed by the A/D module when it is enabled; this current adds to base
IDD.
© 2009 Microchip Technology Inc.
DS80412B-page 1
PIC10F220/222
Clarifications/Corrections to the Data
Sheet:
In the Device Data Sheet (DS41270E), the following
clarifications and corrections should be noted.
1. Module: Electrical Specifications
(Comparator)
Added parameter A32, VIVRF in Table 10-5 as
shown in bold below.
TABLE 10-5:
A/D CONVERTER CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +125°C
Param
Sym.
No.
Characteristic
Min.
Typ†
Max.
Units
A01
NR
Resolution
—
—
8 bits
bit
A03
EIL
Integral Error
—
—
±1.5
LSb
Conditions
A04
EDL
Differential Error
—
—
-1 ≤ EDL ≤ + 1.5
LSb
A05
EFS
Full-scale Range
2.0*
—
5.5*
V
A06
EOFF
Offset Error
—
—
±1.5
LSb
A07
EGN
Gain Error
—
—
±1.8
LSb
A10
—
Monotonicity
—
guaranteed(1)
—
—
A25
VAIN
Analog Input Voltage
VSS
—
VDD
V
A30
ZAIN
Recommended Impedance
of Analog Voltage Source
—
—
10
kΩ
A31*
ΔIAD
A/D Conversion Current(2)
—
120
150
μA
2.0V
5.0V
A32
VIVRF Internal Voltage Reference
—
200
250
μA
0.500
0.600
0.700
V
VSS ≤ VAIN ≤ VDD
* These parameters are characterized but not tested.
† Data in the “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design
guidance only and are not tested.
Note 1: The A/D conversion result never decreases with an increase in the input voltage.
2: This is the additional current consumed by the A/D module when it is enabled; this current adds to base
IDD.
DS80412B-page 2
© 2009 Microchip Technology Inc.
PIC10F220/222
APPENDIX A:
REVISION HISTORY
Rev A Document (10/2008)
First revision of this document.
Rev B Document (03/2009)
Added parameter A32 to Module 1.
Clarifications/Corrections to the Data Sheet: Added
Module 1: Electrical Specifications (Comparator);
adding parameter A32 to Table 10-5.
© 2009 Microchip Technology Inc.
DS80412B-page 3
PIC10F220/222
NOTES:
DS80412B-page 4
© 2009 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
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•
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•
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•
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•
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© 2009 Microchip Technology Inc.
DS80412B-page 5
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DS80412B-page 6
© 2009 Microchip Technology Inc.