IPA60R385CP CoolMOS® Power Transistor Product Summary Features V =L V )DL: HI;><JG: D; B : G>I/ HG M . @ 1 [%^Ri /.) R =L"`_#%^Ri@T [ Y V 2 AIG6 ADL <6I: 8 =6G<: O )',1. " *0 Q X%eja _< V " MIG: B : 9K9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A >;>: 9 for industrial grade applications 68 8 DG9>C< ID ' " !" *# V- 7 ;G: : A : 69 EA 6I>C< / D% 0 8 DB EA>6CI; Halogen free mold compound I@&MH++) CoolMOS is specially designed for: V% 6G9 HL>I8 =>C< 0 * - 0 IDEDAD<>: H Type Package Ordering Code Marking BI9/)K,1.<I I@&MH++) LI))))12,*/ /K,1.I Maximum ratings, 6IT [ Y JCA: HHDI=: GL>H: HE: 8 >;>: 9 Parameter DCI>CJDJH9G6>C 8 JGG: CI+# Symbol Conditions I= Value T < Y 2') T < Y .'0 - JA H: 9 9G6>C 8 JGG: CI,# I =%af]dV T < Y +0 K6A6C8 =: : C: G<N H>C<A : EJAH: E 9L I = V == 3 ++0 K6A6C8 =: : C: G<N G: E: I>I>K: t 9K,#-# E 9K I = V == 3 )', K6A6C8 =: 8 JGG: CI G: E: I>I>K: t 9K,#%-# I 9K * , 0 # " 1 9v (Ut GJ<<: 9C: HH 9v (Ut $ 6I: HDJG8 : KDAI6<: V @L - DL: G9>HH>E6I>DC P e`e , E: G6I>C< 6C9 HIDG6<: I: B E: G6IJG: T [ T deX * DJCI>C< IDGFJ: / : K Unit 9 ^C , 9 V =L 3 .) O(_d deReZT v+) O v,) f % O T < Y * H8 G: LH E6<: ,* P u< +8 B IPA60R385CP Maximum ratings, 6IT [ Y JCA: HHDI=: GL>H: HE: 8 >;>: 9 Parameter DCI>CJDJH9>D9: ;DGL6G9 8 JGG: CI+# Value Symbol Conditions IL Unit 2 9 T < Y !>D9: EJAH: 8 JGG: CI,# I L%af]dV +0 / : K: GH: 9>D9: 9v (Ut .# Uv (Ut *. O(_d Parameter Symbol Conditions Values Unit min. typ. max. & & - ]VRUVU & & 1) B B >C ;GDB 8 6H: ;DG H & & +/) u< /)) & & O Thermal characteristics 1=: GB 6AG: H>HI6C8 : ?JC8 I>DC 8 6H: R eYC< 1=: GB 6AG: H>HI6C8 : ?JC8 I>DC R^SZV_e R eYC9 0 DA9: G>C< I: B E: G6IJG: T d`]U L6K: HDA9: G>C< DCAN 6A ADL: 9 6IA : 69H D(P Electrical characteristics, 6IT [ Y JCA : HHDI=: GL>H: HE: 8 >;>: 9 Static characteristics !G6>C HDJG8 : 7G: 6@9DLC KDA I6<: V ";K#=LL V @L 3 I = [ $ 6I: I=G: H=DA9 KDAI6<: V @L"eY# V =L6V @L I = B +'. , ,'. 5: GD <6I: KDA I6<: 9G6>C 8 JGG: CI I =LL V =L 3 V @L 3 T [ Y & & * V =L 3 V @L 3 T [ Y & *) & w9 $ 6I: HDJG8 : A: 6@6<: 8 JGG: CI I @LL V @L 3 V =L 3 & & *)) _9 !G6>C HDJG8 : DC HI6I: G: H>HI6C8 : R =L"`_# V @L 3 I = T [ Y & )',. )',1. " V @L 3 I = T [ Y & )'2- & f * % O DE: C 9G6>C $ 6I: G: H>HI6C8 : / : K R@ E6<: " IPA60R385CP Parameter Values Symbol Conditions Unit min. typ. max. & 02) & & ,1 & & ,/ & Dynamic characteristics &CEJI8 6E68 >I6C8 : C Zdd , JIEJI8 6E68 >I6C8 : C `dd " ;;: 8 I>K: DJIEJI8 6E68 >I6C8 : : C: G<N C `"Vc# cV]ReVU/# V @L 3 V =L 3 f * % O a? V @L 3 V =L 3 ID 3 " ;;: 8 I>K: DJIEJI8 6E68 >I6C8 : I>B : cV]ReVU0# C `"ec# & 2/ & 1JGC DC 9: A 6N I>B : t U"`_# & *) & / >H: I>B : tc & . & 1JGC D;;9: A 6N I>B : t U"`WW# & -) & # 6A AI>B : tW & . & $ 6I: ID HDJG8 : 8 =6G<: Q Xd & - & $ 6I: ID 9G6>C 8 =6G<: Q XU & / & $ 6I: 8 =6G<: IDI6A QX & *0 ++ $ 6I: EA6I: 6J KDAI6<: V a]ReVRf & .') & O & )'2 *'+ O & +/) & _d & ,'* & w< & +- & 9 $ 6I: =6G<: V == 3 V @L 3 I = R @ " _d =6G68 I: G>HI>8 H V == 3 I = V @L ID 3 _< Reverse Diode !>D9: ;DGL6G9 KDAI6<: V L= / : K: GH: G: 8 DK: GN I>B : t cc / : K: GH: G: 8 DK: GN 8 =6G<: Q cc - : 6@G: K: GH: G: 8 DK: GN 8 JGG: CI I cc^ V @L 3 I ? T [ Y V K 3 I ?6I L Ui ?(Ut [ H *# ' 0 1! 6C9 ' " 0 ! +# )>B >I: 9 DCAN 7N B 6M>B JB I: B E: G6IJG: ,# - JAH: L>9I=t a A>B >I: 9 7NT [%^Ri -# / : E: I>I>K: 6K6A6C8 =: 8 6JH: H699>I>DC6AEDL: GADHH: HI=6I8 6C 7: 8 6A8 JA6I: 9 6HP 9O6E 9K$f. .# &L="B= 9>9I" [ H 3 /# C `"Vc# >H6 ;>M: 9 8 6E68 >I6C8 : I=6I<>K: HI=: H6B : HIDG: 9 : C: G<N 6HC `dd L=>A : V =L >HG>H>C< ;GDB ID V =LL' 0# C `"ec# >H6 ;>M: 9 8 6E68 >I6C8 : I=6I<>K: HI=: H6B : 8 =6G<>C< I>B : 6HC `dd L=>A: V =L >HG>H>C< ;GDB ID V =LL' / : K =<]Z_\ 3 3 aVR\ 5O";K#=LL 1 [5M[^Ri >9: CI>8 6AADL H>9: 6C9 =><= H>9: HL>I8 = E6<: IPA60R385CP 1 Power dissipation 2 Safe operating area P e`e6W"T <# I =6W"V =L T < Y D 6) E6G6B : I: G t a 102 35 A>B >I: 9 7N DC HI6I: cVdZdeR_TV 30 [H 25 [H 1 [H 20 I D [A] P tot [W] 10 B H 15 B H 100 10 =< 5 0 10 0 40 80 120 -1 160 100 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics Z eYC<6W"t I# I =6W"V =L T [ Y E6G6B : I: G D=t a(T E6G6B : I: G V @L 101 25 3 3 3 )'. 20 3 Z thJC [K/W] 100 )'+ 3 15 I D [A] )'* )'). )')+ 10-1 3 10 )')* 3 H>C<A: EJAH: 5 3 0 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] / : K 0 5 10 15 20 V DS [V] E6<: IPA60R385CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =6W"V =L T [ Y R =L"`_#6W"I = T [ Y E6G6B : I: G V @L E6G6B : I: G V @L 2.4 16 3 3 14 3 3 2 3 12 3 8 R DS(on) [ ] I D [A] 10 3 6 1.6 3 3 3 3 1.2 3 3 3 4 0.8 2 0.4 0 0 5 10 15 0 20 5 10 15 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R =L"`_#6W"T [ I = V @L 3 I =6W"V @L P V =Ll7+lI =lR =L"`_#^Ri E6G6B : I: G T [ 1.2 40 36 Y 1 32 28 24 I D [A] R DS(on) [ ] 0.8 0.6 Y 16 0.4 20 eja 12 8 0.2 4 0 0 -60 -20 20 60 100 140 180 2 4 6 8 10 V GS [V] T j [°C] / : K 0 E6<: IPA60R385CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V @L6W"Q XReV I = EJAH: 9 I ?6W"V L=# E6G6B : I: G V == E6G6B : I: G T [ 102 10 8 3 3 Y Y Y 101 I F [A] V GS [V] 6 4 100 Y 2 0 10-1 0 5 10 15 20 0 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E 9L6W"T [ I = V == 3 V ;K"=LL#6W"T [ I = B 250 700 200 660 E AS [mJ] V( BR)DSS [V] 150 100 620 580 50 0 540 20 60 100 140 180 T j [°C] / : K -60 -20 20 60 100 140 180 T j [°C] E6<: IPA60R385CP 13 Typ. capacitances 14 Typ. Coss stored energy C 6W"V =L V @L 3 f * % O E `dd= W(V =L) 104 6 5 <Zdd 103 E oss [µJ] C [pF] 4 102 <`dd 3 2 10 1 1 <cdd 100 0 ) *)) +)) ,)) -)) .)) V DS [V] / : K 0 100 200 300 400 500 600 V DS [V] E6<: IPA60R385CP Definition of diode switching characteristics / : K E6<: IPA60R385CP PG-TO220-3-31/TO220-3-11: Outline/ Fully isolated package (2500VAC; 1 minute) !>B : CH>DCH>C B B >C8 =: H / : K E6<: IPA60R385CP Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office "hhh'Z_WZ_V`_'T`^#' Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 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