IPA60R165CP CoolMOS® Power Transistor Product Summary Features V !0 V )DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) R =L"`_#%^Ri@T [ Y V 2 AIG6 ADL <6I: 8 =6G<: O )'*/. " ,2 Q X%eja _< V " MIG: B : 9K9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A >;>: 9 for industrial grade applications 68 8 DG9>C< ID ' " !" V - 7 ;G: : A : 69 EA 6I>C< / D% 0 8 DB EA>6CI; Halogen free mold compound I@&MH++) CoolMOS CP is designed for: V % 6G9 HL>I8 =>C< 0 * - 0 IDEDAD<>: H Type Package BI9/)K*/.<I I@&MH++) Ordering Code Marking 0- /K*/.I Maximum ratings, 6IT [ Y JCA: HHDI=: GL>H: HE: 8 >;>: 9 Parameter DCI>CJDJH9G6>C 8 JGG: CI+# Symbol Conditions I= Value T < Y +* T < Y *, - JA H: 9 9G6>C 8 JGG: CI,# I =%af]dV T < Y /* K6A6C8 =: : C: G<N H>C<A : EJAH: E 9L I = V == 3 .++ K6A6C8 =: : C: G<N G: E: I>I>K: t 9K,#%-# E 9K I = V == 3 )'02 K6A6C8 =: 8 JGG: CI G: E: I>I>K: t 9K,#%-# I 9K * , 0 # " 1 9v (Ut GJ<<: 9C: HH 9v (Ut $ 6I: HDJG8 : KDAI6<: V @L - DL: G9>HH>E6I>DC P e`e , E: G6I>C< 6C9 HIDG6<: I: B E: G6IJG: T [ T deX * DJCI>C< IDGFJ: / : K Unit 9 ^C 0'2 9 V =L 3 .) O(_d deReZT v+) O v,) f % O T < Y * H8 G: LH E6<: ,- P u< +8 B IPA60R165CP Maximum ratings, 6IT [ Y JCA: HHDI=: GL>H: HE: 8 >;>: 9 Parameter DCI>CJDJH9>D9: ;DGL6G9 8 JGG: CI+# Value Symbol Conditions IL Unit +* 9 T < Y !>D9: EJAH: 8 JGG: C ,# I L%af]dV /* / : K: GH: 9>D9: 9v (Ut .# Uv (Ut *. O(_d Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics 1=: GB 6AG: H>HI6C8 : ?JC8 I>DC 8 6H: R eYC< 1=: GB 6AG: H>HI6C8 : ?JC8 I>DC R^SZV_e R eYC9 0 DA9: G>C< I: B E: G6IJG: T d`]U L6K: HDA9: G>C< DCAN 6A ADL: 9 6IA : 69H & ,'/. D(P ]VRUVU & & 1) B B >C ;GDB 8 6H: ;DG H & & +/) u< /)) & & O Electrical characteristics, 6IT [ Y JCA : HHDI=: GL>H: HE: 8 >;>: 9 Static characteristics !G6>C HDJG8 : 7G: 6@9DLC KDA I6<: V ";K#=LL V @L 3 I = [ $ 6I: I=G: H=DA9 KDAI6<: V @L"eY# V =L6V @L I = B +'. , ,'. 5: GD <6I: KDA I6<: 9G6>C 8 JGG: CI I =LL V =L 3 V @L 3 T [ Y & & * V =L 3 V @L 3 T [ Y & *) & w9 $ 6I: HDJG8 : A: 6@6<: 8 JGG: CI I @LL V @L 3 V =L 3 & & *)) _9 !G6>C HDJG8 : DC HI6I: G: H>HI6C8 : R =L"`_# V @L 3 I = T [ Y & )'*. )'*/. " V @L 3 I = T [ Y & )'-) & f * % O DE: C 9G6>C $ 6I: G: H>HI6C8 : / : K R@ E6<: " IPA60R165CP Parameter Values Symbol Conditions Unit min. typ. max. & +))) & & *)) & & 1, & Dynamic characteristics &CEJI8 6E68 >I6C8 : C Zdd , JIEJI8 6E68 >I6C8 : C `dd " ;;: 8 I>K: DJIEJI8 6E68 >I6C8 : : C: G<N C `"Vc# cV]ReVU/# V @L 3 V =L 3 f * % O a? V @L 3 V =L 3 ID 3 " ;;: 8 I>K: DJIEJI8 6E68 >I6C8 : I>B : cV]ReVU0# C `"ec# & ++) & 1JGC DC 9: A 6N I>B : t U"`_# & *+ & / >H: I>B : tc & . & 1JGC D;;9: A 6N I>B : t U"`WW# & .) & # 6A AI>B : tW & . & $ 6I: ID HDJG8 : 8 =6G<: Q Xd & 2 & $ 6I: ID 9G6>C 8 =6G<: Q XU & *,') & $ 6I: 8 =6G<: IDI6A QX & ,2 .+ $ 6I: EA6I: 6J KDAI6<: V a]ReVRf & .') & O & )'2 *'+ O & ,2) & _d & 0'. & w< & ,1 & 9 V == 3 V @L 3 I = R @ " _d Gate Charge Characteristics V == 3 I = V @L ID 3 _< Reverse Diode !>D9: ;DGL6G9 KDAI6<: V L= / : K: GH: G: 8 DK: GN I>B : t cc / : K: GH: G: 8 DK: GN 8 =6G<: Q cc - : 6@G: K: GH: G: 8 DK: GN 8 JGG: CI I cc^ V @L 3 I ? T [ Y V K 3 I ?6I L Ui ?(Ut [ H *# ' 0 1! 6C9 ' " 0 ! +# - JAH: L>9I=t a A>B >I: 9 7NT [%^Ri ,# )>B >I: 9 DCAN 7N B 6M>B JB I: B E: G6IJG: -# / : E: I>I>K: 6K6A6C8 =: 8 6JH: H699>I>DC6AEDL: GADHH: HI=6I8 6C 7: 8 6A8 JA6I: 9 6HP 9O6E 9K$f. .# &L="B= 9>9I" [ H 3 <`"Vc# >H6 ;>M: 9 8 6E68 >I6C8 : I=6I<>K: HI=: H6B : HIDG: 9 : C: G<N 6H 0# / : K =<]Z_\ 3 3 aVR\ 5O";K#=LL 1 [5M[^Ri >9: CI>8 6AADL H>9: 6C9 =><= H>9: HL>I8 = A: DHHL=> 3 !0 >HG>H>C< ;GDB ID 3 =LL' C `"ec# >H6 ;>M: 9 8 6E68 >I6C8 : I=6I<>K: HI=: H6B : 8 =6G<>C< I>B : 6HC `dd L=>A: V =L >HG>H>C< ;GDB ID V =LL' E6<: IPA60R165CP 1 Power dissipation 2 Safe operating area P e`e6W"T <# I =6W"V =L T < Y D 6) E6G6B : I: G t a 102 40 A >B >I: 9 7N DC HI6I: cVdZdeR_TV [H 30 [H [ H 10 1 I D [A] P tot [W] B H 20 B H 100 =< 10 10-1 0 0 40 80 120 100 160 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics QeYC<6W"ea# I =6W"V =L T [ Y E6G6B : I: G D=t a(T E6G6B : I: G V @L 101 80 3 3 *)O 60 )'. 3 100 I D [A] Z thJC [K/W] )'+ )'* 40 3 )'). 10-1 )')+ 3 20 )')* 3 H>C<A: EJAH: 10 3 -2 10-5 0 10-4 10-3 10-2 10-1 100 101 / : K 0 5 10 15 20 25 V DS [V] t p [s] E6<: IPA60R165CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =6W"V =L T [ Y R =L"`_#6W"I = T [ Y E6G6B : I: G V @L E6G6B : I: G V @L 40 1.2 3 3 3 3 1 3 3 3 30 3 0.8 3 3 3 R DS(on) [ ] I D [A] 3 20 3 0.6 0.4 3 10 0.2 0 0 0 5 10 15 20 25 0 10 20 30 40 50 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R =L"`_#6W"T [ I = V @L 3 I =6W"V @L P V =Ll7+lI =lR =L"`_#^Ri 0.5 100 0.4 80 0.3 60 21! 0.2 40 eja Y 20 0.1 0 0 -60 -20 20 60 100 140 180 T j [°C] / : K Y I D [A] R DS(on) [ ] E6G6B : I: G T [ 0 2 4 6 8 10 V GS [V] E6<: IPA60R165CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V @L6W"Q XReV I = EJAH: 9 I ?6W"V L=# E6G6B : I: G V == E6G6B : I: G T [ 102 10 Y 8 Y 3 Y 10 3 Y 1 I F [A] V GS [V] 6 4 100 2 10 0 0 10 20 30 -1 0 40 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E 9L6W"T [ I = V == 3 V ;K"=LL#6W"T [ I = B 600 700 660 E AS [mJ] V BR(DSS) [V] 400 620 200 580 0 540 20 60 100 140 180 T j [°C] / : K -60 -20 20 60 100 140 180 T j [°C] E6<: IPA60R165CP 13 Typ. capacitances 14 Typ. Coss stored energy C 6W"V =L V @L 3 f * % O E `dd= W(V =L) 105 14 12 104 10 <Zdd C [pF] E oss [µJ] 103 <`dd 102 8 6 4 10 1 2 <cdd 10 0 0 0 100 200 300 400 500 / : K 0 100 200 300 400 500 600 V DS [V] V DS [V] E6<: IPA60R165CP Definition of diode switching characteristics / : K E6<: IPA60R165CP PG-TO220-3-31/TO220-3-11: Outline/Fully isolated package (2500VAC; 1 minute) / : K E6<: IPA60R165CP Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office "hhh'Z_WZ_V`_'T`^#' Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. / : K E6<: