IPL60R299CP Data Sheet (1.6 MB, EN)

MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS CP
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Data Sheet
Rev. 2.1, 2012-01-10
Final
Industrial & Multimarket
600V CoolMOS™ CP Power Transistor
1
IPL60R299CP
Description
The CoolMOS™ CP series offers devices which provide all benefits of a fast
switching SJ MOSFET while not sacrificing ease of use. Extremely low
switching and conduction losses make switching applications even more
efficient, more compact, lighter, and cooler.
ThinPAK
ThinPAK is a a new leadless SMD package for HV MOSFETs. The new
package has a very small footprint of only 64mm² (vs. 150mm² for the
D2PAK) and a very low profile with only 1mm height (vs. 4.4mm for the
D2PAK). The significantly smaller package size, combined with benchmark
low parasitic inductances, provides designers with a new and effective way
to decrease system solution size in power-density driven designs.
bottom view
Features
•
•
•
•
•
•
•
•
Reduced board space consumption
Increased power density
Short commutation loop
Smooth switching waveform
easy to use products
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Quallfied according to JEDEC1) for target applications (Server, Adapter)
Pb-free plating, Halogen free
Applications: Server, Adapter
Table 1
Key Performance Parameters
Parameter
Value
Unit
Related Links
VDS @ Tj,max
650
V
IFX CP Product Brief
RDS(on),max
0.299
Ω
IFX CP Portfolio
Qg,typ
22
nC
IFX ThinPAK Webpage
ID,pulse
34
A
IFX Design tools
Eoss @ 400V
4.2
µJ
Body diode di/dt
200
A/µs
Type
Package
Marking
IPL60R299CP
PG-VSON-4
6R299P
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Table of Contents
Table of Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
3
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Maximum ratings
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Continuous drain current
1)
Values
ID
Min.
Typ.
Max.
-
-
11.1
Unit
Note / Test Condition
A
TC= 25 °C
7
2)
TC= 100°C
Pulsed drain current
ID,pulse
-
-
34
A
TC=25 °C
Avalanche energy, single pulse
EAS
-
-
290
mJ
ID=4.4 A,VDD=50 V
(see table 17)
Avalanche energy, repetitive2)3)
EAR
-
-
0.44
Avalanche current, repetitive
IAR
-
-
4.4
A
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480 V
Gate source voltage
VGS
-20
-
20
V
static
2)3)
-30
ID=4.4 A,VDD=50 V
30
AC (f>1 Hz)
Power dissipation
Ptot
-
-
96
W
Operating temperature
Tj
-40
-
150
°C
Storage temperature
Tstg
-40
-
125
°C
Continuous diode forward current
IS
-
-
11.1
A
TC=25 °C
IS,pulse
-
-
34
A
TC=25 °C
dv/dt
-
-
15
V/ns
VDS=0...400 V, ISD ≤ ID,
Tj=25 °C
Maximum diode commutation
dif/dt
speed4)
1) Limited by Tj,max. Maximum duty cycle
2) Pulse width tp limited by Tj,max
-
-
200
A/µs
(see table 18)
2)
Diode pulse current
Reverse diode dv/dt
4)
TC=25 °C
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4) Identical low side and high side switch with identical RG
3
Thermal characteristics
Table 3
Thermal characteristics
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
1.3
Thermal resistance, junction ambient
RthJA
-
-
45
Reflow soldering temperature
Tsold
-
-
260
Note /
Test Condition
°C/W
SMD version, device
on PCB, 6cm2 cooling
area1)
°C
reflow MSL 3
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
4
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Parameter
Symbol
Drain-source breakdown voltage V(BR)DSS
Values
Min.
Typ.
Max.
600
-
-
Unit
Note / Test Condition
V
VGS=0 V, ID=0.25 mA
Gate threshold voltage
VGS(th)
2.5
3
3.5
Zero gate voltage drain current
IDSS
-
-
1
-
10
-
-
-
100
nA
VGS=20 V, VDS=0 V
-
0.27
0.299
Ω
VGS=10 V, ID=6.6 A,
Tj=25 °C
-
0.70
-
-
1.9
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate resistance
Table 5
RG
VDS=VGS, ID=0.44 mA
VDS=600 V, VGS=0 V,
Tj=25 °C
µA
VDS=600 V, VGS=0 V,
Tj=150 °C
VGS=10 V, ID=6.6 A,
Tj=150 °C
Ω
f=1 MHz, open drain
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=100 V,
f=1 MHz
Input capacitance
Ciss
-
1100
-
Output capacitance
Coss
-
60
-
Effective output capacitance,
energy related1)
Co(er)
-
46
-
VGS=0 V,
VDS=0...480 V
Effective output capacitance, time
related2)
Co(tr)
-
120
-
ID=constant, VGS=0 V
VDS=0...480V
Turn-on delay time
td(on)
-
10
-
Rise time
tr
-
5
-
Turn-off delay time
td(off)
-
40
-
ns
VDD=400 V,
VGS=13 V, ID=6.6 A,
RG= 4.3 Ω
(see table 16)
Fall time
tf
5
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
5
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Electrical characteristics
Table 6
Gate charge characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Gate to source charge
Qgs
-
5
-
Gate to drain charge
Qgd
-
8
-
Gate charge total
Qg
-
22
-
Gate plateau voltage
Vplateau
-
5
-
Table 7
Unit
Note /
Test Condition
nC
VDD=480 V, ID=6.6 A,
VGS=0 to 10 V
V
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Diode forward voltage
VSD
-
0.9
-
V
VGS=0 V, IF=6.6 A,
Tj=25 °C
Reverse recovery time
trr
-
300
-
ns
Reverse recovery charge
Qrr
-
3.9
-
µC
Peak reverse recovery current
Irrm
-
26
-
A
VR=400 V, IF=6.6 A,
diF/dt=100 A/µs
(see table 18)
Final Data Sheet
6
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
Power dissipation
Max. transient thermal impedance
Ptot = f(TC)
Z(thJC)=f(tp); parameter: D=tp/T
Table 9
Safe operating area TC=25 °C
Safe operating area TC=80 °C
ID=f(VDS); TC=25 °C; D=0; parameter tp
Final Data Sheet
ID=f(VDS); TC=80 °C; D=0; parameter tp
7
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Electrical characteristics diagrams
Table 10
Typ. output characteristics Tj=25 °C
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 11
Typ. drain-source on-state resistance
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=6.6 A; VGS=10 V
Final Data Sheet
8
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Electrical characteristics diagrams
Table 12
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
VGS=f(Qgate), ID=6.6 A pulsed
Table 13
Avalanche energy
Drain-source breakdown voltage
EAS=f(Tj); ID=4.4 A; VDD=50 V
VBR(DSS)=f(Tj); ID=0.25 mA
Final Data Sheet
9
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Electrical characteristics diagrams
Table 14
Typ. capacitances
Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz
EOSS=f(VDS)
Table 15
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
Final Data Sheet
10
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Test circuits
6
Test circuits
Table 16
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
VDS
90%
VDS
VGS
10%
VGS
td(on)
td(off)
tr
ton
Table 17
tf
toff
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
VDS
ID
Table 18
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
i
v
diF /d t
R G1
ΙF
VDS
RG2
Ι RRM
trr = tS + tF
Q rr = Q S + Q F
trr
tS
tF
QS
10% Ι RRM
QF
d irr /d t
90% Ι RRM
RG1 = RG2
Final Data Sheet
v
11
t
VRRM
SIL00088
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Package outlines
7
Package outlines
Figure 1
Outlines ThinPAK 8x8, dimensions in mm/inches
Final Data Sheet
12
Rev. 2.1, 2012-01-10
600V CoolMOS™ CP Power Transistor
IPL60R299CP
Revision History
8
Revision History
Revision History: 2012-01-10, Rev. 2.1
Previous Revision:
Page
Subjects (major changes since last revision)
2.0
Release of final data sheet
2.1
Update package drawing and schematic
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Edition 2012-01-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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of any third party.
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Final Data Sheet
13
Rev. 2.1, 2012-01-10