IPA60R250CP Data Sheet (372 KB, EN)

IPA60R250CP
CoolMOS® Power Transistor
Product Summary
Features
V DS @ Tj,max
• Lowest figure-of-merit R ONxQg
650
0.250 Ω
R DS(on),max@T j= 25°C
• Ultra low gate charge
Q g,typ
V
6.6
26
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO220 FP
• Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type
Package
Marking
IPA60R250CP
PG-TO220FP
6R250P
6R299P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current 2)
ID
Value
T C=25 °C
12
T C=100 °C
8
Pulsed drain current3)
I D,pulse
T C=25 °C
40
Avalanche energy, single pulse
E AS
I D=5.2 A, V DD=50 V
345
Avalanche energy, repetitive t AR3),4)
E AR
I D=5.2 A, V DD=50 V
0.52
Avalanche current, repetitive t AR3),4)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Rev.2.1
Unit
A
mJ
5.2
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
33
W
-55 ... 150
°C
M2.5 screws
page 1
50
Ncm
2012-01-09
IPA60R250CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current 2)
IS
Diode pulse current 3)
I S,pulse
Reverse diode dv /dt 5)
dv /dt
Parameter
Symbol Conditions
Value
Unit
12
T C=25 °C
A
40
15
V/ns
Values
Unit
min.
typ.
max.
-
-
3.75
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
80
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
V
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0,52 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=7.8 A,
T j=25 °C
-
0.22
0.25
Ω
V GS=10 V, I D=7.8 A,
T j=150 °C
-
0.59
-
f =1 MHz, open drain
-
1.3
-
Gate resistance
Rev.2.1
RG
page 2
Ω
2012-01-09
IPA60R250CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1300
-
-
65
-
-
55
-
-
150
-
-
40
-
-
17
-
-
110
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related6)
Effective output capacitance, time
related7)
C o(er)
C o(tr)
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
pF
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
-
12
-
Gate to source charge
Q gs
-
6
-
Gate to drain charge
Q gd
-
9
-
Gate charge total
Qg
-
26
35
Gate plateau voltage
V plateau
-
5
-
V
-
0.9
1.2
V
-
330
-
ns
-
4.5
-
µC
-
27
-
A
V DD=400 V,
V GS=10 V, I D=7.8 A,
R G=23.1 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=7.8 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=7.8 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width t p limited by T j,max
4)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5)
ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev.2.1
page 3
2012-01-09
IPA60R250CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
35
limited by on-state
resistance
30
1 µs
10 µs
25
100 µs
20
I D [A]
P tot [W]
101
1 ms
15
10 ms
10
0
10
DC
5
10-1
0
0
40
80
120
100
160
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC=f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
60
20 V
0.5
12 V
45
100
10V
0.2
Z thJC [K/W]
8V
I D [A]
0.1
0.05
30
6V
0.02
10-1
0.01
5.5 V
15
5V
single pulse
4.5 V
10
-2
10-5
0
10-4
10-3
10-2
10-1
100
101
Rev.2.1
0
5
10
15
20
V DS [V]
t p [s]
page 4
2012-01-09
IPA60R250CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
25
1.6
20 V
12 V
6V
20
1.4
8V
6.5 V
10 V
5.5 V
1.2
R DS(on) [Ω]
I D [A]
15
5V
10
1
6V
7V
0.8
10 V
5.5 V
4.5 V
5V
5
0.6
0
0
5
10
15
0.4
20
0
5
10
15
V DS [V]
20
25
30
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=7.8 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
0.8
C °25
50
0.6
I D [A]
R DS(on) [Ω]
40
0.4
30
C °150
98 %
typ
20
0.2
10
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev.2.1
0
2
4
6
8
10
V GS [V]
page 5
2012-01-09
IPA60R250CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=7.8 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
120 V
25 °C, 98%
8
400 V
150 °C, 98%
101
25 °C
150 °C
I F [A]
V GS [V]
6
4
100
2
10-1
0
0
5
10
15
20
25
0
30
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=5.2 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
350
700
300
660
V BR(DSS) [V]
E AS [mJ]
250
200
150
100
620
580
50
0
540
20
60
100
140
180
Rev.2.1
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
page 6
2012-01-09
IPA60R250CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
10
104
8
Ciss
6
C [pF]
E oss [µJ]
103
102
4
Coss
101
2
Crss
100
0
0
100
200
300
400
500
Rev.2.1
0
100
200
300
400
500
600
V DS [V]
V DS [V]
page 7
2012-01-09
IPA60R250CP
Definition of diode switching characteristics
Rev.2.1
page 8
2012-01-09
IPA60R250CP
PG-TO220-3-31;-3-111: Outline/ Fully isolated package (2500VAC; 1 minute)
Dimensions in mm/inches
Rev.2.1
page 9
2012-01-09
IPA60R250CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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Rev.2.1
page 10
2012-01-09