IPZ60R017C7 Data Sheet (1.1 MB, EN)

IPZ60R017C7
MOSFET
600VCoolMOSªC7PowerTransistor
PG-TO247-4
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
•4pinkelvinsourceconcept
Drain
Pin 1
Gate
Pin 4
Driver
Source
Pin 3
Power
Source
Pin 2
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional
3pinpackage
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
17
mΩ
Qg.typ
240
nC
ID,pulse
495
A
ID,continuous @ Tj<150°C 129
A
Eoss@400V
30
µJ
Body diode di/dt
200
A/µs
Type/OrderingCode
Package
Marking
IPZ60R017C7
PG-TO 247-4
60C7017
Final Data Sheet
1
RelatedLinks
see Appendix A
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
109
69
A
TC=25°C
TC=100°C
-
495
A
TC=25°C
-
-
582
mJ
ID=12.6A; VDD=50V; see table 10
EAR
-
-
2.91
mJ
ID=12.6A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
12.6
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
446
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
60
Ncm M3 and M3.5 screws
IS
-
-
109
A
TC=25°C
Diode pulse current
IS,pulse
-
-
495
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
20
V/ns
VDS=0...400V,ISD<=12.6A,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
200
A/µs
VDS=0...400V,ISD<=12.6A,Tj=25°C
see table 8
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
Continuous diode forward current
2)
1)
Limited by Tj max.
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch
2)
Final Data Sheet
3
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600VCoolMOSªC7PowerTransistor
IPZ60R017C7
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
0.28
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W leaded
Thermal resistance, junction - ambient
RthJA
for SMD version
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Final Data Sheet
Tsold
4
1.6mm (0.063 in.) from case for 10s
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.5
4
V
VDS=VGS,ID=2.91mA
-
50
2
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.015
0.033
0.017
-
Ω
VGS=10V,ID=58.2A,Tj=25°C
VGS=10V,ID=58.2A,Tj=150°C
Gate resistance
RG
-
0.45
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
9890
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
200
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1)
Co(er)
-
375
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
3840
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
30
-
ns
VDD=400V,VGS=13V,ID=58.2A,
RG=1.8Ω;seetable9
Rise time
tr
-
13
-
ns
VDD=400V,VGS=13V,ID=58.2A,
RG=1.8Ω;seetable9
Turn-off delay time
td(off)
-
106
-
ns
VDD=400V,VGS=13V,ID=58.2A,
RG=1.8Ω;seetable9
Fall time
tf
-
3
-
ns
VDD=400V,VGS=13V,ID=58.2A,
RG=1.8Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
50
-
nC
VDD=400V,ID=58.2A,VGS=0to10V
Gate to drain charge
Qgd
-
85
-
nC
VDD=400V,ID=58.2A,VGS=0to10V
Gate charge total
Qg
-
240
-
nC
VDD=400V,ID=58.2A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.0
-
V
VDD=400V,ID=58.2A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
5
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=58.2A,Tj=25°C
630
-
ns
VR=400V,IF=58.2A,diF/dt=100A/µs;
see table 8
-
18
-
µC
VR=400V,IF=58.2A,diF/dt=100A/µs;
see table 8
-
55
-
A
VR=400V,IF=58.2A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
6
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
103
500
100 µs
10 µs
1 µs
1 ms
10 ms
450
102
400
DC
350
101
ID[A]
Ptot[W]
300
250
100
200
10-1
150
100
10-2
50
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
10
100 µs
10 ms
10 µs
100
1 µs
1 ms
2
10
DC
0.5
101
10-1
ZthJC[K/W]
ID[A]
0.2
100
10-1
0.1
0.05
10-2
0.02
0.01
single pulse
10-2
10-3
100
101
102
103
10-3
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
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Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
800
450
20 V
700
400
20 V
10 V
10 V
300
7V
ID[A]
500
ID[A]
350
8V
600
8V
7V
400
6V
250
200
5.5 V
300
150
6V
5V
200
100
5.5 V
100
4.5 V
50
5V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
0.07
0.040
5.5 V
6V
6.5 V
7V
0.035
0.06
0.030
20 V
RDS(on)[Ω]
RDS(on)[Ω]
10 V
0.05
0.025
98%
0.020
typ
0.015
0.04
0.010
0.03
0
50
100
150
200
250
300
350
400
450
500
0.005
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=58.2A;VGS=10V
8
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
800
12
120 V
700
25 °C
10
400 V
600
8
VGS[V]
ID[A]
500
400
6
150 °C
300
4
200
2
100
0
0
2
4
6
8
10
0
12
0
50
100
150
VGS[V]
200
250
300
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=58.2Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
3
10
600
550
500
102
450
25 °C
400
EAS[mJ]
IF[A]
125 °C
101
350
300
250
200
100
150
100
50
10-1
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
0
25
50
75
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
100
125
150
Tj[°C]
EAS=f(Tj);ID=12.6A;VDD=50V
9
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
105
700
680
Ciss
104
660
640
620
C[pF]
VBR(DSS)[V]
103
600
Coss
102
580
560
101
Crss
540
520
-60
-30
0
30
60
90
120
150
100
0
100
Tj[°C]
200
300
400
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
30
25
Eoss[µJ]
20
15
10
5
0
0
100
200
300
400
VDS[V]
Eoss=f(VDS)
Final Data Sheet
10
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9switchingtimes(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
11
ID
VDS
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
6PackageOutlines
Figure1OutlinePG-TO247-4
Final Data Sheet
12
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
7AppendixA
Table11RelatedLinks
• IFXCoolMOSTMC7Webpage:www.infineon.com
• IFXCoolMOSTMC7applicationnote:www.infineon.com
• IFXCoolMOSTMC7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
13
Rev.2.0,2016-03-01
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
RevisionHistory
IPZ60R017C7
Revision:2016-03-01,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-03-01
Release of final version
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EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
14
Rev.2.0,2016-03-01