IPL60R185C7 Data Sheet (1.2 MB, EN)

IPL60R185C7
MOSFET
600VCoolMOSªC7PowerTransistor
ThinPAK8x8
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•SMDpackagewithverylowparasiticinductanceforeasydevicecontrol
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
•4pinkelvinsourceconcept
Drain
Pin 5
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3,4
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•OptimizedPCBassemblyandlayoutsolutions
•Suitableforapplicationssuchasserver,telecomandsolar
•Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional
3pinpackage
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
185
mΩ
Qg.typ
24
nC
ID,pulse
45
A
ID,continuous @ Tj<150°C 21
A
Eoss@400V
2.7
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode
Package
Marking
IPL60R185C7
PG-VSON-4
60C7185
Final Data Sheet
1
RelatedLinks
see Appendix A
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
13
9
A
TC=25°C
TC=100°C
-
45
A
TC=25°C
-
-
53
mJ
ID=3.3A; VDD=50V; see table 10
EAR
-
-
0.26
mJ
ID=3.3A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
3.3
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
77
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Mounting torque
-
-
-
n.a.
Ncm -
IS
-
-
13
A
TC=25°C
Diode pulse current
IS,pulse
-
-
45
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=5.2A,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
400
A/µs
VDS=0...400V,ISD<=5.2A,Tj=25°C
see table 8
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
Continuous diode forward current
2)
1)
Limited by Tj max.
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch
2)
Final Data Sheet
3
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
1.617
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
RthJA
for SMD version
-
35
45
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
°C/W
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Tsold
-
-
260
°C
Reflow soldering temperature
Final Data Sheet
4
reflow MSL3
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.5
4
V
VDS=VGS,ID=0.26mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.159
0.356
0.185
-
Ω
VGS=10V,ID=5.3A,Tj=25°C
VGS=10V,ID=5.3A,Tj=150°C
Gate resistance
RG
-
0.85
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
1080
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
18
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1)
Co(er)
-
34
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
349
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
9
-
ns
VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Rise time
tr
-
4
-
ns
VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Turn-off delay time
td(off)
-
46
-
ns
VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Fall time
tf
-
6
-
ns
VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
5
-
nC
VDD=400V,ID=5.3A,VGS=0to10V
Gate to drain charge
Qgd
-
8
-
nC
VDD=400V,ID=5.3A,VGS=0to10V
Gate charge total
Qg
-
24
-
nC
VDD=400V,ID=5.3A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.0
-
V
VDD=400V,ID=5.3A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
5
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=5.3A,Tj=25°C
290
-
ns
VR=400V,IF=5.3A,diF/dt=100A/µs;
see table 8
-
2.9
-
µC
VR=400V,IF=5.3A,diF/dt=100A/µs;
see table 8
-
21
-
A
VR=400V,IF=5.3A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
6
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
90
100 µs
80
1 µs
10 µs
1 ms
10 ms
101
70
DC
60
50
ID[A]
Ptot[W]
100
40
10-1
30
20
10-2
10
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
100 µs
10 µs
1 µs
1 ms
10 ms
1
10
DC
100
0.5
0
ID[A]
ZthJC[K/W]
10
10-1
0.2
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-3
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
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Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
80
40
20 V
70
10 V
8V
35
20 V
10 V
60
7V
30
8V
25
7V
ID[A]
ID[A]
50
40
6V
20
5.5 V
30
15
6V
20
10
5V
5
4.5 V
5.5 V
10
5V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
0.75
5.5 V
6V
6.5 V
7V
0.43
10 V
0.70
0.38
0.65
20 V
0.33
RDS(on)[Ω]
0.60
RDS(on)[Ω]
20
VDS[V]
0.55
98%
0.28
typ
0.23
0.50
0.18
0.45
0.13
0.40
0.35
0
10
20
30
40
50
0.08
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=5.3A;VGS=10V
8
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
70
12
120 V
25 °C
60
400 V
10
50
8
ID[A]
VGS[V]
40
150 °C
30
6
4
20
2
10
0
0
2
4
6
8
10
0
12
0
5
10
VGS[V]
15
20
25
30
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=5.3Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
60
50
101
40
EAS[mJ]
25 °C
IF[A]
125 °C
100
30
20
10
10-1
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=3.3A;VDD=50V
9
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
105
700
680
104
660
Ciss
103
620
C[pF]
VBR(DSS)[V]
640
600
102
Coss
101
580
560
100
Crss
540
520
-60
-30
0
30
60
90
120
150
10-1
0
100
Tj[°C]
200
300
400
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
3.0
2.5
Eoss[µJ]
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
VDS[V]
Eoss=f(VDS)
Final Data Sheet
10
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9switchingtimes(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
11
ID
VDS
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
6PackageOutlines
Figure1OutlinePG-VSON-4,dimensionsinmm/inches
Final Data Sheet
12
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
7AppendixA
Table11RelatedLinks
• IFXCoolMOSTMC7Webpage:www.infineon.com
• IFXCoolMOSTMC7applicationnote:www.infineon.com
• IFXCoolMOSTMC7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
13
Rev.2.0,2015-12-11
600VCoolMOSªC7PowerTransistor
IPL60R185C7
RevisionHistory
IPL60R185C7
Revision:2015-12-11,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2015-12-11
Release of final version
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EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
14
Rev.2.0,2015-12-11