VT1045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 1 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. VT1045CBP PIN 1 PIN 2 PIN 3 CASE MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 45 V IFSM 100 A Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test VF at IF = 5.0 A 0.41 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) 200 °C Package TO-220AB Diode variation Dual common cathode per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t 1 h SYMBOL VT1045CBP UNIT VRRM 45 V IF(AV) (1) 10 5.0 A IFSM 100 A TOP, TSTG -40 to +150 °C TJ (2) 200 °C Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 11-May-16 Document Number: 89363 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1045CBP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.5 A Instantaneous forward voltage per diode TA = 25 °C IF = 5.0 A VF (1) IF = 2.5 A TA = 125 °C IF = 5.0 A Reverse current per diode SYMBOL TA = 25 °C VR = 45 V TA = 125 °C IR (2) TYP. MAX. 0.44 - UNIT 0.49 0.58 0.34 - 0.41 0.50 - 500 μA 5 15 mA V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance per device RJC VT1045CBP 3.5 2.5 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT1045CBP-M3/4W 1.87 4W 50/tube Tube Revision: 11-May-16 Document Number: 89363 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1045CBP www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Instantaneous Reverse Current (mA) DC Forward Rectified Current (A) 12 10 8 6 4 2 DC Forward Current at Thermal Equilibrium 0 100 120 140 160 180 100 TA = 125 °C TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 200 20 Case Temperature (°C) 40 100 10 000 D = 0.5 D = 0.3 3.0 D = 0.2 2.5 D = 1.0 2.0 D = 0.1 1.5 T 1.0 0.5 D = tp/T tp 4 5 1 2 3 1000 100 0.1 0 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 Junction Capacitance (pF) 3.5 6 1 TA = 150 °C TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 100 Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) 100 0.1 10 Reverse Voltage (V) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Instantaneous Forward Current (A) 80 Fig. 4 - Typical Reverse Characteristics Per Diode 4.0 10 60 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Average Power Loss (W) TA = 150 °C 10 1.0 1.1 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 11-May-16 Document Number: 89363 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1045CBP www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 11-May-16 Document Number: 89363 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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